IRF7466PBF N-Channel 30V 11A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7466PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 11A continuous drain current at 25°C. This device features the HEXFET® series technology in an 8-SO surface mount package and is designed for general-purpose switching applications requiring moderate power dissipation (2.5W maximum).

The IRF7466PBF is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements. Substitute devices must maintain electrical compatibility across critical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal performance while accommodating the 8-SO/8-SOIC package footprint.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	11	A
On-Resistance (Rds On) @ 11A, 10V	12.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	3	V
Maximum Gate Voltage (Vgs)	±20	V
Power Dissipation (Max)	2.5	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-SOIC (0.154", 3.90mm Width)	—

Substitute Part Grouping Explanation

Substitution eligibility for the IRF7466PBF is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal 30V
Continuous Drain Current (Id): Must be ≥11A at 25°C
On-Resistance (Rds On): Must not exceed 12.5mOhm at rated current and 10V gate voltage
Gate Threshold Voltage (Vgs(th)): Must be ≤3V at 250µA
Maximum Gate Voltage (Vgs): Must support ±20V operation
Package: Must be 8-SO or 8-SOIC footprint compatible
Technology: N-Channel MOSFET (Metal Oxide)
Operating Temperature: Must support -55°C to 150°C range

Secondary Compatibility Factors:

Mounting type: Surface Mount
Moisture Sensitivity Level: MSL 1 (Unlimited)
REACH and ECCN compliance status

Substitute parts are grouped into two categories: Direct Electrical Equivalents (matching all primary criteria within specified tolerances) and Functional Alternatives (meeting primary criteria with minor parameter variations that do not compromise circuit performance).

Parameter Comparison

Parameter	IRF7466PBF (Infineon)	FDS6690A (onsemi)	DMS3015SSS-13 (Diodes)	DMN3016LSS-13 (Diodes)	FDS8878 (Fairchild)	RSS100N03TB (Rohm)
Vdss (V)	30	30	30	30	30	30
Id @ 25°C (A)	11	11	11	10.3	10.2	10
Rds On (mOhm) @ rated Id, 10V	12.5	12.5	11.9	12	14	13
Vgs(th) @ 250µA (V)	3	3	2.5	2.5	2.5	2.5
Vgs (Max) (V)	±20	±20	±12	±20	±20	20
Qg @ Vgs (nC)	23 @ 4.5V	16 @ 5V	30.6 @ 10V	25.1 @ 10V	26 @ 10V	14 @ 5V
Ciss @ 15V (pF)	2100	1205	1276	1415	897	1070
Power Dissipation (W)	2.5	2.5	1.55	1.5	2.5	2
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	to 150
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC
Product Status	Obsolete	Active	Active	Active	Active	Active

Engineering Selection Recommendations

Tier 1 - Direct Electrical Equivalent:

FDS6690A (onsemi) is the primary substitute for IRF7466PBF. This device matches all critical electrical parameters: 30V Vdss, 11A continuous drain current, 12.5mOhm Rds On at rated conditions, and ±20V gate voltage rating. The FDS6690A is manufactured by onsemi under the PowerTrench® series and maintains active product status with ROHS3 compliance. Inventory availability is high (39,900 pcs). The device is supplied in 8-SOIC package with identical footprint compatibility.

Tier 2 - Functional Alternatives with Minor Parameter Variations:

DMS3015SSS-13 (Diodes Incorporated) provides equivalent electrical performance with improved on-resistance (11.9mOhm) and lower power dissipation (1.55W). This device maintains 11A continuous drain current and 30V Vdss rating. The primary design consideration is the reduced maximum gate voltage (±12V versus ±20V), which may limit applicability in circuits requiring higher gate drive voltages. The device includes integrated Schottky diode body feature. Active product status with ROHS3 compliance and high inventory (28,700 pcs).

DMN3016LSS-13 (Diodes Incorporated) offers 30V Vdss with 10.3A continuous drain current and 12mOhm Rds On. This substitute is suitable for applications where the 11A current rating is not fully utilized. Gate voltage rating matches the original (±20V). Active product status with ROHS3 compliance and adequate inventory (6,838 pcs).

FDS8878 (Fairchild Semiconductor) provides 30V Vdss with 10.2A continuous drain current and 14mOhm Rds On. This device is suitable for applications with slightly reduced current requirements. PowerTrench® series technology with active product status. High inventory availability (32,800 pcs).

Tier 3 - Limited Compatibility:

RSS100N03TB (Rohm Semiconductor) meets voltage and package requirements with 30V Vdss and 10A continuous drain current. On-resistance is 13mOhm. The operating temperature specification lists only maximum temperature (150°C) without explicit minimum rating, which may present documentation concerns for applications requiring full -55°C to 150°C range validation. Active product status with ROHS3 compliance.

Selection Basis:

All substitute parts maintain compliance with REACH regulations and EAR99 export classification. Package compatibility (8-SOIC, 0.154" width, 3.90mm) is confirmed across all alternatives. Moisture sensitivity level (MSL 1 - Unlimited) is consistent. Selection should prioritize FDS6690A for direct replacement, with Tier 2 alternatives considered based on specific application current and thermal requirements.

Frequently Asked Questions (FAQ)

Q1: Can FDS6690A be used as a direct replacement for IRF7466PBF without circuit modification?

A: Yes. FDS6690A matches all critical electrical parameters: 30V Vdss, 11A continuous drain current, 12.5mOhm Rds On at 10V gate voltage, and ±20V gate voltage rating. The 8-SOIC package footprint is identical. No circuit modifications are required for electrical compatibility.

Q2: What is the primary difference between DMS3015SSS-13 and the original IRF7466PBF?

A: DMS3015SSS-13 has a reduced maximum gate voltage rating (±12V versus ±20V). This device is suitable for standard gate drive circuits operating within ±12V range. The improved on-resistance (11.9mOhm) and lower power dissipation (1.55W) provide thermal benefits. Verify gate drive voltage compatibility before selection.

Q3: Why does DMN3016LSS-13 have lower continuous drain current (10.3A) than the original 11A specification?

A: DMN3016LSS-13 is rated for 10.3A continuous drain current at 25°C ambient. This device is suitable for applications where peak current requirements do not exceed 10.3A. The on-resistance (12mOhm) and voltage rating (30V) remain compatible. Verify application current requirements before substitution.

Q4: Are all substitute parts available in the same packaging as IRF7466PBF?

A: Yes. All listed substitutes are supplied in 8-SOIC package with 0.154" width and 3.90mm body dimension, ensuring PCB footprint compatibility with the original IRF7466PBF design.

Q5: What is the significance of the Schottky diode feature in DMS3015SSS-13?

A: DMS3015SSS-13 includes an integrated Schottky diode in the body structure. This feature provides faster reverse recovery compared to standard body diodes, which may improve switching performance in certain applications. This is a functional enhancement and does not prevent substitution.

Q6: Which substitute part has the lowest on-resistance?

A: DMS3015SSS-13 has the lowest on-resistance at 11.9mOhm (measured at 11A, 10V gate voltage), compared to 12.5mOhm for the original IRF7466PBF. This provides improved efficiency and reduced power dissipation.

Q7: Can RSS100N03TB be used in applications requiring full -55°C to 150°C temperature range operation?

A: RSS100N03TB datasheet specifies maximum operating temperature (150°C) without explicit minimum temperature rating documentation. For applications requiring validated operation across the full -55°C to 150°C range, FDS6690A or DMS3015SSS-13 are recommended alternatives with complete temperature range specifications.

Q8: What is the inventory status of substitute parts?

A: FDS6690A (onsemi): 39,900 pcs; DMS3015SSS-13 (Diodes): 28,700 pcs; FDS8878 (Fairchild): 32,800 pcs; RSS100N03TB (Rohm): 15,465 pcs; DMN3016LSS-13 (Diodes): 6,838 pcs. All substitutes maintain active product status with adequate supply availability.

Q9: Are all substitute parts ROHS3 compliant?

A: FDS6690A, DMS3015SSS-13, DMN3016LSS-13, and RSS100N03TB are ROHS3 compliant. FDS8878 compliance status is not specified in provided documentation. Verify ROHS3 compliance requirements with supplier for FDS8878 if regulatory compliance is mandatory.

Q10: What gate charge differences exist between substitute parts?

A: Gate charge (Qg) varies across substitutes: IRF7466PBF (23 nC @ 4.5V), FDS6690A (16 nC @ 5V), DMS3015SSS-13 (30.6 nC @ 10V), DMN3016LSS-13 (25.1 nC @ 10V), FDS8878 (26 nC @ 10V), RSS100N03TB (14 nC @ 5V). Lower gate charge reduces gate drive power requirements. Verify gate driver capability for high-frequency switching applications.

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