IRF7420PBF P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7420PBF is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 12V drain-to-source voltage with 11.5A continuous drain current at 25°C. This device is part of the HEXFET® series and features a surface mount 8-SO package. The IRF7420PBF is currently discontinued at DiGi Electronics, making identification of functionally equivalent substitute components essential for ongoing design support and production continuity. Substitute parts must maintain compatibility with the original electrical specifications and physical package dimensions while meeting current availability and compliance requirements.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	12	V
Current - Continuous Drain (Id) @ 25°C	11.5	A
Rds On (Max) @ Id, Vgs	14	mOhm @ 11.5A, 4.5V
Power Dissipation (Max)	2.5	W (Ta)
Operating Temperature Range	-55 to 150	°C (TJ)
Package / Case	8-SOIC (0.154", 3.90mm Width)	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IRF7420PBF is determined by the following critical parameters:

Electrical Compatibility Criteria:

FET Type: P-Channel topology must be maintained
Package / Case: 8-SOIC (0.154", 3.90mm Width) physical compatibility required
Drain to Source Voltage (Vdss): Substitute must equal or exceed 12V rating
Current - Continuous Drain (Id): Substitute must support minimum 11.5A continuous current
Rds On (Max): Substitute must not exceed 14 mOhm @ rated current and gate voltage
Power Dissipation (Max): Substitute must support minimum 2.5W (Ta)
Operating Temperature Range: Substitute must cover -55°C to 150°C minimum
Mounting Type: Surface Mount required
RoHS Status: ROHS3 Compliant required

Compliance Requirements:

REACH Status: REACH Unaffected
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)

The three substitute parts listed below meet all electrical and mechanical compatibility requirements while offering active product status and improved availability.

Parameter Comparison

Parameter	IRF7420PBF (Main)	FDS6375	FDS6575	FDS6576
Manufacturer	Infineon Technologies	onsemi	onsemi	onsemi
FET Type	P-Channel	P-Channel	P-Channel	P-Channel
Drain to Source Voltage (Vdss)	12 V	20 V	20 V	20 V
Current - Continuous Drain (Id) @ 25°C	11.5 A (Tc)	8 A (Ta)	10 A (Ta)	11 A (Ta)
Rds On (Max) @ Id, Vgs	14 mOhm @ 11.5A, 4.5V	24 mOhm @ 8A, 4.5V	13 mOhm @ 10A, 4.5V	14 mOhm @ 11A, 4.5V
Vgs(th) (Max) @ Id	900 mV @ 250µA	1.5 V @ 250µA	1.5 V @ 250µA	1.5 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 4.5 V	36 nC @ 4.5 V	74 nC @ 4.5 V	60 nC @ 4.5 V
Vgs (Max)	±8 V	±8 V	±8 V	±12 V
Input Capacitance (Ciss) (Max) @ Vds	3529 pF @ 10 V	2694 pF @ 10 V	4951 pF @ 10 V	4044 pF @ 10 V
Power Dissipation (Max)	2.5 W (Ta)	2.5 W (Ta)	2.5 W (Ta)	2.5 W (Ta)
Operating Temperature Range	-55 to 150 °C (TJ)	-55 to 175 °C (TJ)	-55 to 175 °C (TJ)	-55 to 150 °C (TJ)
Package / Case	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Product Status	Discontinued at DiGi Electronics	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

FDS6576 (Primary Substitute)

The FDS6576 from onsemi is the closest electrical equivalent to the IRF7420PBF. This P-Channel MOSFET maintains the same 8-SOIC package footprint and delivers 11A continuous drain current with 14 mOhm maximum on-resistance at 4.5V gate voltage, matching the IRF7420PBF specification. The FDS6576 features a 20V Vdss rating, providing enhanced voltage margin over the original 12V specification. Operating temperature range extends to 175°C, exceeding the IRF7420PBF minimum requirement of 150°C. The device is currently in active production status with high inventory availability (28,789 pieces). Full ROHS3 compliance, REACH unaffected status, and MSL Level 1 rating ensure regulatory and supply chain compatibility.

FDS6575 (Secondary Substitute)

The FDS6575 from onsemi provides an alternative with 10A continuous drain current and 13 mOhm on-resistance at 4.5V gate voltage. This device maintains the 8-SOIC package and 20V Vdss rating. The FDS6575 is suitable for applications where the 11A current specification of the IRF7420PBF can be met with 10A operation. Active product status and high inventory (80,299 pieces) support production continuity. Extended operating temperature to 175°C and full compliance certifications match the FDS6576 profile.

FDS6375 (Tertiary Substitute)

The FDS6375 from onsemi offers 8A continuous drain current with 24 mOhm on-resistance at 4.5V gate voltage. This device is suitable only for applications where the original 11.5A specification can be reduced to 8A operation. The 20V Vdss rating and 8-SOIC package maintain physical and voltage compatibility. Extended operating temperature to 175°C and full compliance certifications are provided. Inventory availability is highest among substitutes (80,299 pieces).

All three substitute parts maintain the required 8-SOIC surface mount package, ROHS3 compliance, REACH unaffected status, and MSL Level 1 rating. Selection should be based on the specific current and on-resistance requirements of the target application.

Frequently Asked Questions (FAQ)

Q: Can the FDS6576 directly replace the IRF7420PBF in existing PCB designs?

A: Yes. The FDS6576 maintains identical 8-SOIC (0.154", 3.90mm Width) package dimensions and pin configuration, enabling direct PCB footprint compatibility. No layout modifications are required.

Q: What is the significance of the higher Vdss rating (20V) in the substitute parts compared to the original 12V specification?

A: The 20V Vdss rating in FDS6375, FDS6575, and FDS6576 provides enhanced voltage margin and improved reliability in applications operating at or near the 12V specification. This higher rating does not degrade performance in 12V circuits and is fully backward compatible.

Q: How do the on-resistance specifications compare between the main part and substitutes?

A: The FDS6576 matches the IRF7420PBF at 14 mOhm @ 11A, 4.5V. The FDS6575 offers 13 mOhm @ 10A, 4.5V, providing lower on-resistance at slightly reduced current. The FDS6375 specifies 24 mOhm @ 8A, 4.5V, suitable only for reduced-current applications.

Q: Are there differences in gate charge between the main part and substitutes?

A: Yes. The IRF7420PBF specifies 38 nC @ 4.5V. The FDS6375 specifies 36 nC, the FDS6576 specifies 60 nC, and the FDS6575 specifies 74 nC. Higher gate charge may require adjusted gate drive timing in high-frequency switching applications.

Q: Do all substitute parts meet the same compliance and environmental requirements?

A: Yes. All three substitute parts (FDS6375, FDS6575, FDS6576) are ROHS3 compliant, REACH unaffected, and rated MSL Level 1 (Unlimited). All meet the -55°C to 150°C operating temperature requirement, with extended ratings to 175°C.

Q: What is the current availability status of each substitute part?

A: FDS6375 and FDS6575 each have 80,299 pieces in stock. FDS6576 has 28,789 pieces in stock. All three are in active production status, ensuring long-term supply continuity.

Q: Can the FDS6375 be used in applications requiring the full 11.5A specification of the IRF7420PBF?

A: No. The FDS6375 is rated for 8A continuous drain current and is not suitable for applications requiring 11.5A operation. The FDS6576 or FDS6575 must be used for full current compatibility.

Q: Are there any gate voltage (Vgs) differences that affect circuit design?

A: The IRF7420PBF and FDS6375/FDS6575 specify ±8V maximum Vgs. The FDS6576 specifies ±12V maximum Vgs, providing additional gate voltage margin. All devices operate with standard 4.5V gate drive voltage.

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