IRF740AS N-Channel MOSFET 400V 10A Equivalent & Substitute Parts

Part Overview

The IRF740AS is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 400V drain-to-source voltage and 10A continuous drain current in a surface mount TO-263 (D2PAK) package. This device is classified as obsolete, which necessitates identification of equivalent and substitute components for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility within the specified parameter ranges while meeting current manufacturing and compliance standards.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	400	V
Continuous Drain Current (Id) @ 25°C	10	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	550	mOhm @ 6A, 10V
Gate Threshold Voltage Vgs(th) (Max)	4	V @ 250µA
Gate Charge (Qg) (Max)	36	nC @ 10V
Maximum Gate Voltage (Vgs)	±30	V
Input Capacitance (Ciss) (Max)	1030	pF @ 25V
Power Dissipation (Max)	3.1 (Ta), 125 (Tc)	W
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package	TO-263 (D2PAK)	—

Substitute Part Grouping Explanation

Substitute parts for the IRF740AS are selected based on strict electrical and mechanical compatibility within the following criteria:

Primary Substitution Criteria:

FET Type: N-Channel (required match)
Drain to Source Voltage (Vdss): 400V minimum (equal or higher acceptable)
Continuous Drain Current (Id): 10A minimum (equal or higher acceptable)
Drive Voltage: 10V (standard gate drive voltage)
Gate Threshold Voltage (Vgs(th)): Within ±1V of 4V specification
Maximum Gate Voltage (Vgs): ±30V (required match)
Operating Temperature Range: -55°C to 150°C (required match)
Mounting Type: Surface Mount (required match)
Package: TO-263 / D2PAK compatible footprint (required match)

Substitution Categories:

Category 1: Direct Equivalent (Identical Electrical Specifications)

IRF740ASPBF: Identical electrical parameters; differs only in packaging (Tube) and product status (Active vs. Obsolete); RoHS3 compliant

Category 2: Enhanced Performance Substitutes (Higher Voltage or Current Rating)

IXFA12N50P: 500V Vdss (25% higher), 12A Id (20% higher), improved power dissipation (200W Tc); maintains compatible gate drive and threshold voltage
R5011ANJTL: 500V Vdss (25% higher), 11A Id (10% higher), compatible Rds On and gate characteristics
STB11NK40ZT4: Maintains 400V Vdss and 9A Id (within 10% of original); compatible electrical parameters with active product status

All substitute parts maintain surface mount D2PAK/TO-263 package compatibility and operate within the -55°C to 150°C temperature range.

Parameter Comparison

Parameter	IRF740AS	IRF740ASPBF	IXFA12N50P	R5011ANJTL	STB11NK40ZT4
Manufacturer	Vishay Siliconix	Vishay Siliconix	IXYS	Rohm Semiconductor	STMicroelectronics
Product Status	Obsolete	Active	Active	Active	Active
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	400	400	500	500	400
Id @ 25°C (A)	10 (Tc)	10 (Tc)	12 (Tc)	11 (Ta)	9 (Tc)
Drive Voltage (V)	10	10	10	10	10
Rds On (Max) @ Id, Vgs (mOhm)	550 @ 6A, 10V	550 @ 6A, 10V	500 @ 6A, 10V	500 @ 5.5A, 10V	550 @ 4.5A, 10V
Vgs(th) (Max) (V)	4 @ 250µA	4 @ 250µA	5.5 @ 1mA	4.5 @ 1mA	4.5 @ 100µA
Gate Charge Qg (Max) (nC)	36 @ 10V	36 @ 10V	29 @ 10V	30 @ 10V	32 @ 10V
Vgs (Max) (V)	±30	±30	±30	±30	±30
Ciss (Max) (pF)	1030 @ 25V	1030 @ 25V	1830 @ 25V	1000 @ 25V	930 @ 25V
Power Dissipation (Max) (W)	3.1 (Ta), 125 (Tc)	3.1 (Ta), 125 (Tc)	200 (Tc)	75 (Tc)	110 (Tc)
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	150 (TJ)	-55 to 150
Package	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263AA (IXFA)	LPTS	D2PAK
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Affected	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

IRF740ASPBF (Direct Equivalent)

IRF740ASPBF is the primary substitute for IRF740AS. Both parts share identical electrical specifications, gate drive characteristics, and thermal performance. The primary distinction is product status: IRF740ASPBF is active and manufactured to current standards, whereas IRF740AS is obsolete. IRF740ASPBF carries RoHS3 compliance and is available in Tube packaging. This part is suitable for direct replacement in all applications where the IRF740AS was originally specified.

IXFA12N50P (Enhanced Performance Substitute)

IXFA12N50P provides higher voltage (500V Vdss) and current (12A Id) ratings with improved power dissipation capability (200W Tc). The gate threshold voltage is elevated to 5.5V, which may require gate drive circuit adjustment in applications with marginal drive voltage. Input capacitance is significantly higher (1830 pF), affecting switching speed. This part is suitable for applications requiring enhanced thermal performance or higher voltage margin. RoHS3 compliant and active product status.

R5011ANJTL (Enhanced Performance Substitute)

R5011ANJTL offers 500V Vdss and 11A Id with compatible gate threshold voltage (4.5V) and gate charge characteristics. Power dissipation is rated at 75W (Tc). The LPTS package maintains D2PAK footprint compatibility. This part is suitable for applications requiring higher voltage rating with minimal gate drive circuit modification. RoHS3 compliant and active product status.

STB11NK40ZT4 (Near-Equivalent Substitute)

STB11NK40ZT4 maintains the 400V Vdss rating with 9A Id (within 10% of original specification). Electrical parameters including Rds On, gate threshold voltage, and gate charge are closely matched. Power dissipation is rated at 110W (Tc). This part is suitable for applications where voltage and current ratings are critical design constraints. RoHS3 compliant, active product status, and available in Cut Tape and Digi-Reel packaging.

Compliance Considerations

All substitute parts are RoHS3 compliant, addressing environmental and regulatory requirements. IRF740ASPBF carries REACH Affected status, while IXFA12N50P, R5011ANJTL, and STB11NK40ZT4 are REACH Unaffected. Selection should account for supply chain compliance requirements specific to the end application and geographic market.

Frequently Asked Questions (FAQ)

Q: Can IRF740ASPBF be used as a direct replacement for IRF740AS?

A: Yes. IRF740ASPBF is electrically and mechanically identical to IRF740AS. Both parts feature 400V Vdss, 10A continuous drain current, 550mOhm Rds On, and TO-263 D2PAK packaging. The primary difference is product status: IRF740ASPBF is active and RoHS3 compliant, whereas IRF740AS is obsolete. IRF740ASPBF is suitable for direct substitution without circuit modification.

Q: What are the key differences between the IRF740AS and IXFA12N50P?

A: IXFA12N50P has higher voltage (500V vs. 400V) and current (12A vs. 10A) ratings with significantly improved power dissipation (200W Tc vs. 125W Tc). Gate threshold voltage is higher (5.5V vs. 4V), which may require gate drive adjustment. Input capacitance is higher (1830 pF vs. 1030 pF), affecting switching characteristics. IXFA12N50P is suitable for applications requiring enhanced thermal performance or higher voltage margin.

Q: Are all substitute parts compatible with the original TO-263 D2PAK footprint?

A: Yes. All substitute parts are specified for TO-263 or D2PAK package variants, maintaining mechanical and electrical footprint compatibility. However, pin assignment and thermal characteristics may vary slightly between manufacturers. PCB layout and thermal management should be verified for each specific part.

Q: What is the impact of higher gate threshold voltage in substitute parts?

A: Gate threshold voltage (Vgs(th)) determines the minimum gate voltage required to turn the MOSFET on. IXFA12N50P has Vgs(th) of 5.5V compared to IRF740AS at 4V. This requires higher gate drive voltage to achieve full conduction. Applications with marginal gate drive voltage should verify that the substitute part's threshold voltage is compatible with existing gate drive circuits.

Q: Which substitute part is recommended for new designs?

A: IRF740ASPBF is recommended for new designs requiring direct electrical equivalence to IRF740AS. For applications where enhanced thermal performance or higher voltage margin is beneficial, IXFA12N50P or R5011ANJTL provide improved specifications. STB11NK40ZT4 is suitable when 400V voltage rating is a critical design constraint.

Q: Are there RoHS compliance differences between substitute parts?

A: All substitute parts are RoHS3 compliant. IRF740ASPBF carries REACH Affected status, while IXFA12N50P, R5011ANJTL, and STB11NK40ZT4 are REACH Unaffected. Applications subject to REACH restrictions should select parts with REACH Unaffected status.

Q: How does gate charge affect switching performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. IRF740AS has Qg of 36 nC. IXFA12N50P has lower gate charge (29 nC), enabling faster switching. R5011ANJTL and STB11NK40ZT4 have gate charge values of 30 nC and 32 nC respectively, providing similar switching performance to the original part.

Q: What is the significance of input capacitance (Ciss) in substitute selection?

A: Input capacitance affects gate drive circuit design and switching speed. IRF740AS has Ciss of 1030 pF. IXFA12N50P has significantly higher Ciss (1830 pF), requiring higher gate drive current for equivalent switching speed. R5011ANJTL (1000 pF) and STB11NK40ZT4 (930 pF) provide similar input capacitance to the original part.

Q: Can substitute parts with higher current ratings be used in applications designed for 10A?

A: Yes. Parts with higher current ratings (IXFA12N50P at 12A, R5011ANJTL at 11A) can be used in applications designed for 10A continuous current. The higher rating provides additional margin and thermal headroom. However, thermal management and PCB layout should be verified to ensure the application benefits from the improved specifications.

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