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IRF7379 Equivalent & Substitute Parts
Part Overview
The IRF7379 is an N and P-Channel MOSFET array manufactured by Infineon Technologies, designed for surface mount applications in 8-SOIC packaging. This integrated dual-channel device operates at 30V drain-to-source voltage with continuous drain currents of 5.8A (N-channel) and 4.3A (P-channel). The IRF7379 is classified as obsolete, necessitating identification of functionally equivalent active alternatives to support ongoing design requirements and procurement needs.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 30 | V |
| Continuous Drain Current (Id) @ 25°C - N-Channel | 5.8 | A |
| Continuous Drain Current (Id) @ 25°C - P-Channel | 4.3 | A |
| Rds On (Max) @ Id, Vgs | 45 | mOhm |
| Gate Charge (Qg) (Max) @ Vgs | 25 | nC |
| Power Dissipation (Max) | 2.5 | W |
| Operating Temperature Range | -55 to 150 | °C |
| Package Type | 8-SOIC | - |
| Configuration | N and P-Channel | - |
Substitute Part Grouping Explanation
Substitution of the IRF7379 is determined by strict equivalence across the following critical parameters:
Voltage Rating: Both main and substitute parts must maintain 30V Vdss rating to ensure safe operation within the same circuit topology.
Channel Configuration: The dual N and P-Channel configuration must be preserved in any substitute to maintain complementary switching functionality.
Package Compatibility: The 8-SOIC (0.154", 3.90mm Width) surface mount package must be identical to ensure PCB layout compatibility without redesign.
Current Ratings: Substitute parts must meet or exceed the specified continuous drain currents of 5.8A (N-channel) and 4.3A (P-channel) at 25°C.
Thermal Performance: Operating temperature range of -55°C to 150°C must be maintained.
On-Resistance: Rds On characteristics must be compatible with the application's power dissipation budget.
The SI4532CDY-T1-GE3 satisfies all substitution criteria through equivalent voltage rating, matching package geometry, compatible current ratings, and identical thermal operating range.
Parameter Comparison
| Parameter | IRF7379 (Main Part) | SI4532CDY-T1-GE3 (Substitute) | Compatibility |
|---|---|---|---|
| Manufacturer | Infineon Technologies | Vishay Siliconix | Different manufacturer |
| Drain to Source Voltage (Vdss) | 30V | 30V | Equivalent |
| Continuous Drain Current (Id) - N-Channel @ 25°C | 5.8A | 6A | Substitute exceeds specification |
| Continuous Drain Current (Id) - P-Channel @ 25°C | 4.3A | 4.3A | Equivalent |
| Rds On (Max) @ Id, Vgs | 45 mOhm @ 5.8A, 10V | 47 mOhm @ 3.5A, 10V | Comparable performance |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10V | 9 nC @ 10V | Substitute offers lower gate charge |
| Input Capacitance (Ciss) (Max) @ Vds | 520 pF @ 25V | 305 pF @ 15V | Substitute offers lower input capacitance |
| Power Dissipation (Max) | 2.5W | 2.78W | Substitute exceeds specification |
| Operating Temperature Range | -55°C to 150°C | -55°C to 150°C | Equivalent |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | Equivalent |
| Product Status | Obsolete | Active | Substitute is currently manufactured |
| RoHS Status | RoHS non-compliant | ROHS3 Compliant | Substitute meets current compliance |
Engineering Selection Recommendations
Product Status Consideration: The IRF7379 is classified as obsolete, while the SI4532CDY-T1-GE3 maintains active production status. This distinction is critical for long-term supply chain reliability and design continuity.
Compliance Status: The SI4532CDY-T1-GE3 is ROHS3 compliant, whereas the IRF7379 is RoHS non-compliant. For applications subject to RoHS regulations or customer requirements, the substitute part satisfies current environmental compliance standards.
Electrical Performance: Both parts share identical voltage ratings (30V Vdss) and matching P-channel current specifications (4.3A). The substitute's N-channel current rating (6A) exceeds the main part's specification (5.8A), providing design margin. Gate charge and input capacitance characteristics of the substitute are superior, resulting in lower switching losses and improved gate drive efficiency.
Package Compatibility: Identical 8-SOIC package geometry ensures direct PCB layout compatibility without redesign requirements.
Thermal Operating Range: Both parts operate across the identical temperature range (-55°C to 150°C), maintaining thermal design consistency.
The SI4532CDY-T1-GE3 is a direct functional substitute suitable for applications currently using or designed for the IRF7379.
Frequently Asked Questions (FAQ)
Q: Can the SI4532CDY-T1-GE3 be used as a direct replacement for the IRF7379 without PCB modifications?
A: Yes. Both parts use identical 8-SOIC (0.154", 3.90mm Width) packaging with matching pin configurations. No PCB layout changes are required for physical substitution.
Q: What are the key electrical differences between these parts?
A: The SI4532CDY-T1-GE3 provides higher N-channel current (6A vs. 5.8A), lower gate charge (9nC vs. 25nC), and lower input capacitance (305pF vs. 520pF). These characteristics result in improved switching performance and reduced gate drive power requirements.
Q: Why is the IRF7379 classified as obsolete?
A: The IRF7379 is no longer in active production by Infineon Technologies. The SI4532CDY-T1-GE3 represents the current-generation equivalent from Vishay Siliconix.
Q: Are there compliance differences between these parts?
A: Yes. The IRF7379 is RoHS non-compliant, while the SI4532CDY-T1-GE3 is ROHS3 compliant. For applications requiring RoHS compliance, the substitute part is necessary.
Q: Do both parts have the same voltage rating?
A: Yes. Both parts are rated for 30V drain-to-source voltage (Vdss), ensuring compatibility in circuits designed for this voltage class.
Q: What is the operating temperature range for both parts?
A: Both the IRF7379 and SI4532CDY-T1-GE3 operate across -55°C to 150°C junction temperature range.
Q: How do the on-resistance characteristics compare?
A: The IRF7379 specifies 45mOhm at 5.8A, 10V gate voltage. The SI4532CDY-T1-GE3 specifies 47mOhm at 3.5A, 10V gate voltage. These values are comparable for typical application requirements.
Q: Is the substitute part currently available in inventory?
A: The SI4532CDY-T1-GE3 is available in active production with 15,365 pieces in stock, compared to the IRF7379's obsolete status with limited remaining inventory of 2,100 pieces.
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