IRF7301PBF Equivalent & Substitute Parts

Part Overview

The IRF7301PBF is a dual N-channel MOSFET array manufactured by Infineon Technologies, designed for surface mount applications requiring logic level gate control. This device integrates two N-channel MOSFETs in an 8-SOIC package with a maximum drain-source voltage rating of 20V and continuous drain current capability of 5.2A per channel at 25°C.

The IRF7301PBF has been discontinued at DiGi Electronics. Identifying equivalent substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Substiute Parts

IRF7301PBF

Infineon TechnologiesIn Stock: 3050IRF7301PBF Datasheet

Current PartRFQ

DMN2041LSD-13

Diodes IncorporatedIn Stock: 3683DMN2041LSD-13 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF7301PBF is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

• Drain to Source Voltage (Vdss): 20V minimum
• Configuration: 2 N-Channel (Dual) in single package
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Mounting Type: Surface Mount
• FET Feature: Logic Level Gate
• Technology: MOSFET (Metal Oxide)
• Operating Temperature Range: -55°C to 150°C (TJ)

Performance Parameters (Substitutes must meet or exceed):

• Current - Continuous Drain (Id) @ 25°C: 5.2A minimum
• Rds On (Max): 50 mOhm or lower
• Vgs(th) (Max): 700 mV or lower
• Gate Charge (Qg) (Max): 20 nC or lower
• Input Capacitance (Ciss) (Max): 660 pF or lower

Compliance Parameters:

• RoHS Status: ROHS3 Compliant
• Moisture Sensitivity Level (MSL): 1 (Unlimited)

The DMN2041LSD-13 from Diodes Incorporated meets all critical matching parameters and exceeds performance specifications in continuous drain current, on-resistance, and gate charge characteristics.

Parameter Comparison

Engineering Selection Recommendations

The DMN2041LSD-13 is a direct substitute for the IRF7301PBF based on the following engineering criteria:

Package and Mechanical Compatibility: Both devices utilize the 8-SOIC (0.154", 3.90mm Width) surface mount package, ensuring PCB layout and assembly process compatibility without modification.

Electrical Compatibility: The DMN2041LSD-13 maintains the same 20V drain-source voltage rating and dual N-channel configuration. The substitute part exceeds the original specification in continuous drain current (7.63A vs. 5.2A), on-resistance (28 mOhm vs. 50 mOhm), and gate charge (15.6 nC vs. 20 nC), providing improved performance margins in switching speed and thermal management.

Threshold Voltage Consideration: The DMN2041LSD-13 exhibits a higher gate threshold voltage (1.2V vs. 700 mV). This parameter difference requires circuit-level verification to confirm compatibility with existing gate drive voltage levels and logic signal conditioning.

Regulatory and Compliance Status: Both parts maintain ROHS3 compliance, MSL Level 1 (Unlimited) moisture sensitivity rating, and identical operating temperature ranges (-55°C to 150°C TJ). The DMN2041LSD-13 carries active product status with confirmed inventory availability, eliminating supply chain discontinuation risk.

Product Availability: The IRF7301PBF is discontinued at DiGi Electronics with no active procurement path. The DMN2041LSD-13 is actively manufactured and stocked (3609 Pcs New Original In Stock), supporting immediate design transition and production continuity.

Frequently Asked Questions (FAQ)

Q: Can the DMN2041LSD-13 be used as a direct pin-for-pin replacement for the IRF7301PBF?

A: Yes. Both devices share identical 8-SOIC package geometry (0.154", 3.90mm Width) and dual N-channel MOSFET configuration. Pin assignments and PCB footprints are compatible without modification.

Q: What is the significance of the higher gate threshold voltage (Vgs(th)) in the DMN2041LSD-13?

A: The DMN2041LSD-13 specifies a maximum gate threshold voltage of 1.2V compared to 700 mV for the IRF7301PBF. This parameter defines the gate-source voltage at which the MOSFET begins to conduct. Circuit designs must verify that existing gate drive signals provide sufficient voltage margin above this threshold to ensure reliable switching operation.

Q: Does the lower maximum power rating (1.16W vs. 2W) of the DMN2041LSD-13 affect substitution suitability?

A: The power rating reflects thermal dissipation capability under specified conditions. The DMN2041LSD-13 exhibits lower on-resistance (28 mOhm vs. 50 mOhm), which reduces resistive heating. Application-specific thermal analysis is required to confirm that the substitute part's power dissipation remains within acceptable limits for the intended circuit.

Q: Are both parts compliant with current environmental and regulatory standards?

A: Yes. Both the IRF7301PBF and DMN2041LSD-13 are ROHS3 compliant, REACH unaffected, and classified under ECCN EAR99 with identical HTSUS codes (8541.29.0095). Moisture sensitivity level is MSL 1 (Unlimited) for both devices.

Q: What is the inventory status difference between these parts?

A: The IRF7301PBF is discontinued at DiGi Electronics with legacy inventory (2974 Pcs New Original In Stock). The DMN2041LSD-13 is an active product with current manufacturing support and higher inventory availability (3609 Pcs New Original In Stock), ensuring long-term supply chain reliability.

Q: How do the gate charge characteristics compare?

A: The DMN2041LSD-13 specifies 15.6 nC gate charge at 10V compared to 20 nC at 4.5V for the IRF7301PBF. Lower gate charge enables faster switching transitions and reduced gate drive power consumption, providing performance improvement in high-frequency switching applications.

Q: Are there any circuit design considerations for thermal management?

A: The DMN2041LSD-13 provides superior on-resistance performance (28 mOhm vs. 50 mOhm), reducing conduction losses. However, the lower maximum power rating requires verification that thermal dissipation in the application remains within the substitute part's thermal limits. PCB thermal design and heat sinking requirements should be re-evaluated based on actual circuit current levels and duty cycles.