IRF720S MOSFET N-Channel 400V 3.3A Equivalent & Substitute Parts

Part Overview

The IRF720S is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 400V drain-to-source voltage with 3.3A continuous drain current. The device is housed in a Surface Mount TO-263 (D2PAK) package and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for new production and repair applications. Substitute parts must maintain electrical compatibility within the specified parameter ranges while meeting current manufacturing and compliance standards.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	400	V
Continuous Drain Current (Id) @ 25°C	3.3	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	1.8	Ohm @ 2A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id	4	V @ 250µA
Gate Charge (Qg) @ Vgs	20	nC @ 10V
Maximum Gate Voltage (Vgs)	±20	V
Input Capacitance (Ciss) @ Vds	410	pF @ 25V
Power Dissipation (Max)	3.1 (Ta), 50 (Tc)	W
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package	TO-263 (D2PAK)	—

Substitute Part Grouping Explanation

Substitute parts for the IRF720S are identified based on strict electrical and mechanical compatibility criteria. The primary substitution logic is as follows:

Direct Equivalent Substitutes maintain identical electrical specifications across all critical parameters: FET type (N-Channel), drain-to-source voltage (400V), continuous drain current (3.3A), gate threshold voltage (4V @ 250µA), maximum gate voltage (±20V), and package type (TO-263 D2PAK). These parts are pin-compatible and functionally interchangeable without circuit modification.

Functional Substitutes share the same package type and gate control characteristics but differ in voltage or current ratings. These parts are suitable only when the application circuit can tolerate the parameter differences and when the substitute part's ratings exceed or match the original design requirements.

The following parameters determine substitution eligibility:

FET Type: Must be N-Channel
Package: Must be TO-263 (D2PAK) for mechanical compatibility
Gate Threshold Voltage (Vgs(th)): Must be 4V @ 250µA for gate drive compatibility
Maximum Gate Voltage (Vgs): Must be ±20V
Drain-to-Source Voltage (Vdss): Must equal or exceed 400V for direct equivalents
Continuous Drain Current (Id): Must equal or exceed 3.3A for direct equivalents

Parameter Comparison

Parameter	IRF720S (Main Part)	IRF720SPBF (Direct Equivalent)	IRF540NSTRLPBF (Functional Substitute)
Manufacturer	Vishay Siliconix	Vishay Siliconix	Infineon Technologies
FET Type	N-Channel	N-Channel	N-Channel
Drain to Source Voltage (Vdss)	400 V	400 V	100 V
Continuous Drain Current (Id) @ 25°C	3.3 A (Tc)	3.3 A (Tc)	33 A (Tc)
Drive Voltage (Max Rds On)	10 V	10 V	10 V
Rds On (Max) @ Id, Vgs	1.8 Ohm @ 2A, 10V	1.8 Ohm @ 2A, 10V	44 mOhm @ 16A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id	4 V @ 250µA	4 V @ 250µA	4 V @ 250µA
Gate Charge (Qg) @ Vgs	20 nC @ 10V	20 nC @ 10V	71 nC @ 10V
Maximum Gate Voltage (Vgs)	±20 V	±20 V	±20 V
Input Capacitance (Ciss) @ Vds	410 pF @ 25V	410 pF @ 25V	1960 pF @ 25V
Power Dissipation (Max)	3.1 W (Ta), 50 W (Tc)	3.1 W (Ta), 50 W (Tc)	130 W (Tc)
Operating Temperature Range	-55 to 150 °C (TJ)	-55 to 150 °C (TJ)	-55 to 175 °C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Package	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)
Product Status	Obsolete	Active	Active
RoHS Status	RoHS Non-Compliant	RoHS3 Compliant	RoHS3 Compliant

Engineering Selection Recommendations

IRF720SPBF is the recommended direct equivalent substitute for the IRF720S. This part is manufactured by Vishay Siliconix and maintains identical electrical specifications across all critical parameters. The IRF720SPBF is pin-compatible and functionally interchangeable without circuit modification. The primary advantage of this substitute is its Active product status and RoHS3 compliance, ensuring long-term availability and regulatory conformance for new designs and production applications. The IRF720SPBF is supplied in Tube packaging with 1,845 units currently in stock.

IRF540NSTRLPBF is a functional substitute manufactured by Infineon Technologies. This part shares the same package type (TO-263 D2PAK) and gate control characteristics (Vgs(th) = 4V @ 250µA, Vgs = ±20V) but operates at a lower drain-to-source voltage rating (100V versus 400V) and higher continuous drain current (33A versus 3.3A). The IRF540NSTRLPBF is suitable only for applications where the circuit voltage does not exceed 100V and where the higher current capability and lower on-resistance (44 mOhm) provide design benefits. This part is Active, RoHS3 compliant, and available in high volume (35,300 units in stock). The IRF540NSTRLPBF exhibits higher gate charge (71 nC) and input capacitance (1960 pF) compared to the IRF720S, which may affect switching speed and gate drive requirements.

Frequently Asked Questions (FAQ)

Q: Can the IRF720SPBF be used as a direct replacement for the IRF720S without circuit modification?

A: Yes. The IRF720SPBF is a direct equivalent with identical electrical specifications. All critical parameters—drain-to-source voltage (400V), continuous drain current (3.3A), gate threshold voltage (4V @ 250µA), on-resistance (1.8 Ohm @ 2A, 10V), and package type (TO-263 D2PAK)—are identical. No circuit modification is required.

Q: What are the key differences between the IRF720S and the IRF540NSTRLPBF?

A: The IRF540NSTRLPBF has a lower drain-to-source voltage rating (100V versus 400V) and higher continuous drain current (33A versus 3.3A). The on-resistance is significantly lower (44 mOhm versus 1.8 Ohm), and the gate charge is higher (71 nC versus 20 nC). These differences make the IRF540NSTRLPBF unsuitable for circuits requiring 400V operation but beneficial for lower-voltage, higher-current applications.

Q: Is the IRF540NSTRLPBF compatible with the IRF720S in a 400V circuit?

A: No. The IRF540NSTRLPBF has a maximum drain-to-source voltage rating of 100V and will fail if exposed to 400V. This part is not suitable for circuits designed for the IRF720S unless the circuit voltage is reduced to 100V or below.

Q: What is the packaging difference between the IRF720SPBF and the IRF540NSTRLPBF?

A: Both parts use the same TO-263 (D2PAK) package for mechanical compatibility. The IRF720SPBF is supplied in Tube packaging, while the IRF540NSTRLPBF is supplied in Cut Tape (CT) and Digi-Reel® (Tape & Reel TR) packaging. Both are Surface Mount devices with identical pinout and footprint.

Q: Why is the IRF720S classified as obsolete?

A: The IRF720S is no longer in active production by Vishay Siliconix. The IRF720SPBF is the current active equivalent and should be used for new designs and production applications.

Q: Are both substitute parts RoHS compliant?

A: Yes. Both the IRF720SPBF and IRF540NSTRLPBF are RoHS3 compliant, whereas the original IRF720S is RoHS non-compliant. This compliance status makes the substitutes suitable for applications with RoHS requirements.

Q: What is the moisture sensitivity level (MSL) for these parts?

A: All three parts—IRF720S, IRF720SPBF, and IRF540NSTRLPBF—have an MSL rating of 1 (Unlimited), indicating no moisture sensitivity restrictions for storage and handling.

Q: Can the IRF540NSTRLPBF be used in a lower-voltage version of a circuit originally designed for the IRF720S?

A: Yes, provided the circuit voltage does not exceed 100V. The IRF540NSTRLPBF offers superior current handling (33A versus 3.3A) and lower on-resistance (44 mOhm versus 1.8 Ohm), which may provide thermal and efficiency benefits in lower-voltage applications. However, the higher gate charge (71 nC) and input capacitance (1960 pF) require verification of gate drive circuit compatibility.

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