IRF7201TR N-Channel MOSFET 30V 7.3A Equivalent & Substitute Parts

Part Overview

The IRF7201TR is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 7.3A continuous drain current. This device is part of the HEXFET® series and is housed in an 8-SO surface mount package. The IRF7201TR is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and component procurement.

Substitution becomes necessary when the original part reaches end-of-life status, inventory depletion occurs, or design revisions require components with improved specifications or compliance certifications. The parts listed below maintain electrical and mechanical compatibility within the defined parameter ranges for this MOSFET category.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	7.3	A
Rds On (Max) @ Id, Vgs	30 mOhm @ 7.3A, 10V	mOhm
Gate Threshold Voltage Vgs(th) (Max) @ Id	1	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	28	nC @ 10V
Power Dissipation (Max)	2.5	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-SOIC (0.154", 3.90mm Width)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution eligibility for the IRF7201TR is determined by the following critical parameters:

Electrical Compatibility Criteria:

Drain to Source Voltage (Vdss): Must equal or exceed 30V
Continuous Drain Current (Id): Must meet or exceed 7.3A at 25°C
On-State Resistance (Rds On): Must not exceed 30 mOhm at rated conditions
Gate Threshold Voltage: Must fall within ±20V maximum gate voltage specification
Power Dissipation: Must support 2.5W thermal rating
Operating Temperature: Must span -55°C to 150°C range

Mechanical Compatibility Criteria:

Package: 8-SOIC form factor with 0.154" (3.90mm) width
Mounting: Surface mount technology
Pin configuration: Identical to 8-SO standard

Compliance Considerations:

RoHS status and REACH compliance affect suitability for regulated applications
Product status (Active, Obsolete, Not For New Designs) influences long-term availability

The substitute parts listed below satisfy these criteria with variations noted in the parameter comparison table.

Parameter Comparison

Parameter	IRF7201TR	IRF7201TRPBFXTMA1	STS10N3LH5	ZXMN3B04N8TA
Manufacturer	Infineon Technologies	Infineon Technologies	STMicroelectronics	Diodes Incorporated
Vdss (V)	30	30	30	30
Id @ 25°C (A)	7.3	7.3	10	7.2
Rds On (Max) (mOhm)	30 @ 7.3A, 10V	30 @ 7.3A, 10V	21 @ 5A, 10V	25 @ 7.2A, 4.5V
Vgs(th) (Max) (V)	1 @ 250µA	1 @ 250µA	1 @ 250µA	0.7 @ 250µA
Gate Charge Qg (Max) (nC)	28 @ 10V	28 @ 10V	4.6 @ 5V	23.1 @ 4.5V
Vgs (Max) (±V)	±20	±20	±22	±12
Ciss (Max) (pF)	550 @ 25V	550 @ 25V	475 @ 25V	2480 @ 15V
Power Dissipation (Max) (W)	2.5	2.5	2.5	2
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	8-SOIC	8-SOIC (PG-DSO-8-902)	8-SOIC	8-SOIC
Product Status	Obsolete	Active	Not For New Designs	Active
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRF7201TRPBFXTMA1 (Infineon Technologies)

This part is a parametric equivalent of the IRF7201TR with identical electrical specifications. The primary distinction is product status: IRF7201TRPBFXTMA1 is classified as Active, ensuring continued availability and manufacturing support. Packaging differs in designation (PG-DSO-8-902 versus 8-SO) but maintains mechanical compatibility. RoHS3 compliance makes this suitable for regulated applications. This part is the preferred direct replacement when Infineon supply chain continuity is required.

STS10N3LH5 (STMicroelectronics)

This STMicroelectronics device offers superior continuous drain current (10A versus 7.3A) and lower on-state resistance (21 mOhm at 5A, 10V). Gate charge is significantly reduced (4.6 nC at 5V), resulting in faster switching characteristics. Product status is "Not For New Designs," indicating limited future availability. RoHS3 compliance is confirmed. Selection of this part is appropriate for applications requiring enhanced current handling or reduced switching losses, provided long-term supply is not critical.

ZXMN3B04N8TA (Diodes Incorporated)

This Diodes Incorporated MOSFET maintains 30V Vdss and 7.2A continuous drain current, closely matching the IRF7201TR electrical profile. On-state resistance is 25 mOhm at 7.2A and 4.5V, meeting the substitution threshold. Gate threshold voltage is lower (700 mV minimum), and maximum gate voltage is limited to ±12V compared to ±20V on the original part. Input capacitance is significantly higher (2480 pF at 15V), which may affect switching performance in high-frequency applications. Power dissipation is rated at 2W (Ta) versus 2.5W (Tc) on the original. Product status is Active with RoHS3 compliance. This part is suitable for applications where gate voltage constraints and higher input capacitance are acceptable.

Frequently Asked Questions (FAQ)

Q: Can IRF7201TRPBFXTMA1 be used as a direct drop-in replacement for IRF7201TR?

A: Yes. IRF7201TRPBFXTMA1 is electrically and mechanically identical to IRF7201TR. Both devices share the same Vdss (30V), Id (7.3A), Rds On (30 mOhm), and thermal rating (2.5W). Package form factor is 8-SOIC in both cases. The primary advantage of IRF7201TRPBFXTMA1 is Active product status and RoHS3 compliance, making it suitable for new procurement.

Q: What are the key differences between STS10N3LH5 and IRF7201TR?

A: STS10N3LH5 provides higher continuous drain current (10A versus 7.3A) and lower on-state resistance (21 mOhm at 5A, 10V versus 30 mOhm at 7.3A, 10V). Gate charge is substantially lower (4.6 nC at 5V), enabling faster switching. However, STS10N3LH5 is classified as "Not For New Designs," limiting future availability. Both devices operate across -55°C to 150°C and are housed in 8-SOIC packages.

Q: Is ZXMN3B04N8TA suitable for high-frequency switching applications?

A: ZXMN3B04N8TA has significantly higher input capacitance (2480 pF at 15V) compared to IRF7201TR (550 pF at 25V). This elevated capacitance increases gate charge requirements and may reduce switching speed in high-frequency circuits. Applications operating below 100 kHz are generally unaffected. For frequencies above 500 kHz, the original IRF7201TR or IRF7201TRPBFXTMA1 are preferred.

Q: What is the impact of ZXMN3B04N8TA's ±12V maximum gate voltage specification?

A: IRF7201TR supports ±20V gate voltage, while ZXMN3B04N8TA is limited to ±12V. If the circuit design applies gate voltages exceeding ±12V, ZXMN3B04N8TA cannot be substituted. Verify gate drive voltage levels in the application schematic before selecting this part.

Q: Are all substitute parts RoHS3 compliant?

A: IRF7201TRPBFXTMA1, STS10N3LH5, and ZXMN3B04N8TA are all RoHS3 compliant. The original IRF7201TR is RoHS non-compliant. For applications subject to RoHS regulations, any of the three substitute parts are acceptable from a compliance standpoint.

Q: Which substitute part has the lowest power dissipation?

A: ZXMN3B04N8TA is rated at 2W (Ta) maximum power dissipation, compared to 2.5W (Tc) for IRF7201TR, IRF7201TRPBFXTMA1, and STS10N3LH5. However, this difference reflects measurement conditions (Ta versus Tc) rather than inherent thermal performance. Thermal design should account for actual operating current and ambient conditions.

Q: Can STS10N3LH5 be used in applications requiring long-term component availability?

A: STS10N3LH5 is classified as "Not For New Designs," indicating STMicroelectronics does not recommend this part for new product development. While current inventory exists (15,265 pieces), future availability is not guaranteed. For applications requiring extended component life and supply continuity, IRF7201TRPBFXTMA1 (Active status) or ZXMN3B04N8TA (Active status) are more appropriate selections.

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