IRF7103PBF Equivalent & Substitute Parts

Part Overview

The IRF7103PBF is a dual N-channel MOSFET array manufactured by Infineon Technologies, rated for 50V drain-to-source voltage and 3A continuous drain current in an 8-SO surface mount package. This component is part of the HEXFET® series and is classified as discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives for ongoing design requirements and production continuity.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	50	V
Current - Continuous Drain (Id) @ 25°C	3	A
Rds On (Max) @ Id, Vgs	130 mOhm @ 3A, 10V	mOhm
Vgs(th) (Max) @ Id	3	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30	nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	290	pF @ 25V
Power - Max	2	W
Operating Temperature Range	-55 to 150	°C (TJ)
Configuration	2 N-Channel (Dual)	—
Package / Case	8-SOIC (0.154", 3.90mm Width)	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the IRF7103PBF is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Configuration: 2 N-Channel (Dual) MOSFET array
Package: 8-SOIC or 8-SO surface mount, 0.154" width, 3.90mm
Drain-to-Source Voltage (Vdss): Equal to or greater than 50V
Continuous Drain Current (Id): Equal to or greater than 3A at 25°C
On-State Resistance (Rds On): Equal to or lower than 130 mOhm at rated conditions
Gate Threshold Voltage (Vgs(th)): 3V or lower at 250µA
Operating Temperature Range: -55°C to 150°C minimum
Compliance: ROHS3 compliant, MSL 1 (Unlimited)

Substitute parts are grouped into two categories:

Category A - Direct Voltage/Current Equivalents (50V-60V, 2.5A-3.3A):

DMN6070SSD-13 (Diodes Incorporated): 60V, 3.3A, active status
ZXMN6A11DN8TA (Diodes Incorporated): 60V, 2.5A, active status

Category B - Higher Current Capability (60V, 6.5A):

SI4946BEY-T1-E3 (Vishay Siliconix): 60V, 6.5A, active status

Category C - Lower Voltage, Higher Current (20V, 5.9A-8A):

SI9926CDY-T1-E3 (Vishay Siliconix): 20V, 8A, active status
ZXMN2A04DN8TA (Diodes Incorporated): 20V, 5.9A, active status

Category D - High Voltage, Lower Current (500V, 370mA):

FQS4903TF (onsemi): 500V, 370mA, obsolete status

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Power Max (W)	Temp Range (°C)	Status
IRF7103PBF	Infineon	50	3	130 @ 3A, 10V	3 @ 250µA	30 @ 10V	290 @ 25V	2	-55 to 150	Discontinued
DMN6070SSD-13	Diodes Inc.	60	3.3	80 @ 12A, 10V	3 @ 250µA	12.3 @ 10V	588 @ 30V	1.2	-55 to 150	Active
SI4946BEY-T1-E3	Vishay	60	6.5	41 @ 5.3A, 10V	3 @ 250µA	25 @ 10V	840 @ 30V	3.7	-55 to 175	Active
SI9926CDY-T1-E3	Vishay	20	8	18 @ 8.3A, 4.5V	1.5 @ 250µA	33 @ 10V	1200 @ 10V	3.1	-55 to 150	Active
ZXMN6A11DN8TA	Diodes Inc.	60	2.5	120 @ 2.5A, 10V	1 @ 250µA (Min)	5.7 @ 10V	330 @ 40V	1.8	-55 to 150	Active
ZXMN2A04DN8TA	Diodes Inc.	20	5.9	25 @ 5.9A, 4.5V	0.7 @ 250µA (Min)	22.1 @ 5V	1880 @ 10V	1.8	-55 to 150	Active
FQS4903TF	onsemi	500	0.37	6.2 @ 185mA, 10V	4 @ 250µA	8.2 @ 10V	200 @ 25V	2	-55 to 150	Obsolete

Engineering Selection Recommendations

For Direct Replacement (50V-60V Operating Range):

DMN6070SSD-13 and ZXMN6A11DN8TA are the primary substitutes for the IRF7103PBF. Both maintain the 50V-60V voltage class, support the required 2.5A-3.3A current range, and are in active production status. DMN6070SSD-13 offers superior current handling (3.3A) and lower on-state resistance (80 mOhm), making it the preferred choice for applications requiring maximum performance margin. ZXMN6A11DN8TA provides a closer match to the original 50V specification at 60V rating with 2.5A capability and is suitable for applications with tighter current requirements.

For Enhanced Performance (60V, Higher Current):

SI4946BEY-T1-E3 is suitable for applications where higher current capacity (6.5A) and improved thermal performance (3.7W maximum power) are beneficial. This part operates at an extended temperature range (-55°C to 175°C) and features lower on-state resistance (41 mOhm), providing design margin for demanding applications.

For Lower Voltage Applications (20V Class):

SI9926CDY-T1-E3 and ZXMN2A04DN8TA are applicable only when the circuit operates at 20V or lower. These parts are not suitable as direct replacements for 50V-rated designs but serve as alternatives for redesigned circuits operating in the 20V range.

For High Voltage Applications (500V Class):

FQS4903TF is not a functional substitute for the IRF7103PBF due to significantly reduced current capacity (370mA versus 3A) and obsolete product status. This part is listed for reference only and should not be selected for new designs.

Compliance and Availability:

All recommended substitutes (DMN6070SSD-13, SI4946BEY-T1-E3, SI9926CDY-T1-E3, ZXMN6A11DN8TA, ZXMN2A04DN8TA) are ROHS3 compliant with MSL 1 (Unlimited) rating, matching the original part's environmental and handling specifications. All active-status parts have confirmed inventory availability exceeding 2,700 units.

Frequently Asked Questions (FAQ)

Q: Can DMN6070SSD-13 directly replace IRF7103PBF without circuit modification?

A: Yes, for applications operating at or below 50V. DMN6070SSD-13 is rated for 60V, exceeding the IRF7103PBF's 50V specification, and provides equal or superior current handling (3.3A versus 3A). The 8-SOIC package is mechanically and electrically compatible. No circuit modifications are required.

Q: What is the key difference between DMN6070SSD-13 and ZXMN6A11DN8TA?

A: Both are 60V-rated dual N-channel MOSFETs in 8-SO packages. DMN6070SSD-13 supports 3.3A continuous drain current with 80 mOhm on-state resistance, while ZXMN6A11DN8TA supports 2.5A with 120 mOhm resistance. DMN6070SSD-13 is preferred for applications requiring maximum current capacity; ZXMN6A11DN8TA is suitable for lower-current designs.

Q: Why is SI9926CDY-T1-E3 listed as a substitute if it is rated for only 20V?

A: SI9926CDY-T1-E3 is not a direct substitute for 50V applications. It is listed as an alternative for circuit redesigns operating at 20V or lower voltage levels. Selection of this part requires circuit voltage verification and is not recommended for existing 50V designs.

Q: Is FQS4903TF a viable substitute?

A: No. FQS4903TF is rated for 500V with only 370mA continuous current, making it unsuitable for applications requiring 3A at 50V. Additionally, FQS4903TF is classified as obsolete. This part is listed for reference only and should not be selected for new designs or production.

Q: What are the package compatibility requirements?

A: All substitute parts use 8-SOIC or 8-SO surface mount packages with 0.154" (3.90mm) width, matching the IRF7103PBF footprint. Mechanical compatibility is confirmed across all recommended substitutes. PCB layout modifications are not required.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All recommended substitute parts (DMN6070SSD-13, SI4946BEY-T1-E3, SI9926CDY-T1-E3, ZXMN6A11DN8TA, ZXMN2A04DN8TA) are ROHS3 compliant with MSL 1 (Unlimited) rating, matching the original IRF7103PBF specifications.

Q: Which substitute offers the best thermal performance?

A: SI4946BEY-T1-E3 provides the highest maximum power rating (3.7W) and lowest on-state resistance (41 mOhm at 5.3A, 10V), resulting in superior thermal performance. This part is recommended for applications with stringent thermal requirements or continuous high-current operation.

Q: Can multiple substitute parts be used interchangeably in the same design?

A: DMN6070SSD-13 and ZXMN6A11DN8TA are interchangeable within the 50V-60V voltage class, provided the circuit current requirements do not exceed the lower-rated part's specification (2.5A for ZXMN6A11DN8TA). SI4946BEY-T1-E3 is interchangeable for applications where 60V and 6.5A capability are acceptable. Parts in different voltage classes (20V or 500V) are not interchangeable without circuit redesign.

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