IRF630NSTRR N-Channel MOSFET 200V 9.3A D2PAK Equivalent & Substitute Parts

Part Overview

The IRF630NSTRR is an N-Channel MOSFET manufactured by Infineon Technologies in the HEXFET® series, rated for 200V drain-to-source voltage with 9.3A continuous drain current at 25°C. The device is packaged in D2PAK (TO-263-3) surface mount configuration with a maximum power dissipation of 82W at case temperature. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Substiute Parts

IRF630NSTRR

Infineon TechnologiesIn Stock: 45293IRF630NSTRR Datasheet

Current PartRFQ

IRF630NSTRLPBF

Infineon TechnologiesIn Stock: 10273IRF630NSTRLPBF Datasheet

Parametric EquivalentRFQ

IRF630SPBF

Vishay SiliconixIn Stock: 3822IRF630SPBF Datasheet

MFR RecommendedRFQ

IRF630STRLPBF

Vishay SiliconixIn Stock: 2688IRF630STRLPBF Datasheet

MFR RecommendedRFQ

IRF630STRRPBF

Vishay SiliconixIn Stock: 1618IRF630STRRPBF Datasheet

MFR RecommendedRFQ

STB19NF20

STMicroelectronicsIn Stock: 18447STB19NF20 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF630NSTRR is determined by strict equivalence in the following critical parameters:

Primary Equivalence Criteria:

• FET Type: N-Channel (required)
• Drain-to-Source Voltage (Vdss): 200V (required)
• Package Type: D2PAK / TO-263-3 (required for mechanical compatibility)
• Continuous Drain Current (Id): 9.3A minimum (required for current handling)
• On-State Resistance (Rds On): 300 mOhm maximum (required for thermal performance)
• Gate Threshold Voltage (Vgs(th)): 4V maximum (required for drive compatibility)
• Operating Temperature Range: -55°C to 175°C minimum (required for thermal envelope)

Substitute Categories:

Category 1: Parametric Equivalents (Identical Electrical Specifications)

• IRF630NSTRLPBF (Infineon Technologies, Cut Tape packaging)

Category 2: Manufacturer Recommended Substitutes (Active Status, Minor Parameter Variations)

• IRF630SPBF (Vishay Siliconix, Tube packaging)
• IRF630STRLPBF (Vishay Siliconix, Tape & Reel packaging)
• IRF630STRRPBF (Vishay Siliconix, Tape & Reel packaging)

Category 3: Higher Performance Alternatives (Enhanced Specifications)

• STB19NF20 (STMicroelectronics, Cut Tape & Digi-Reel packaging)

Parameter Comparison

Engineering Selection Recommendations

For Direct Replacement (Obsolete Part Continuation):

IRF630NSTRLPBF is the parametric equivalent with identical electrical specifications. This part maintains the same Infineon HEXFET® series characteristics, 9.3A continuous drain current, 300 mOhm on-state resistance, and 82W power dissipation. The only difference is packaging format (Cut Tape versus Tape & Reel). This part is obsolete but provides exact electrical compatibility.

For Active Production (Recommended for New Designs):

IRF630SPBF, IRF630STRLPBF, and IRF630STRRPBF are active Vishay Siliconix alternatives with ROHS3 compliance. These parts maintain 200V Vdss and 4V gate threshold voltage. The continuous drain current is rated at 9A (versus 9.3A), and on-state resistance is 400 mOhm (versus 300 mOhm). Maximum power dissipation is 74W at case temperature. Operating temperature range is -55°C to 150°C (versus -55°C to 175°C). These specifications remain within acceptable substitution parameters for most applications.

For Enhanced Performance Applications:

STB19NF20 from STMicroelectronics offers superior electrical characteristics with 15A continuous drain current, 160 mOhm on-state resistance, and 90W power dissipation. This part is ROHS3 compliant and active in production. The enhanced current rating and reduced on-state resistance provide lower thermal dissipation. Gate charge is reduced to 24 nC, improving switching performance. Operating temperature range is -55°C to 150°C.

Compliance Considerations:

The IRF630NSTRR is RoHS non-compliant. All substitute parts listed (IRF630NSTRLPBF, IRF630SPBF, IRF630STRLPBF, IRF630STRRPBF, STB19NF20) are ROHS3 compliant, meeting current environmental regulations. All parts are classified as EAR99 for export control purposes.

Frequently Asked Questions (FAQ)

Q: Can IRF630SPBF directly replace IRF630NSTRR in existing designs?

A: IRF630SPBF is electrically compatible for most applications. The part maintains identical Vdss (200V) and Vgs(th) (4V) specifications. Continuous drain current is 9A versus 9.3A, and on-state resistance is 400 mOhm versus 300 mOhm. These differences result in approximately 8% lower current rating and 33% higher on-state resistance. Thermal dissipation will be higher at equivalent current levels. Verify that your circuit design accommodates these parameter variations before substitution.

Q: What is the difference between IRF630NSTRLPBF and IRF630STRLPBF?

A: Both parts are electrically identical with 200V Vdss, 9.3A (IRF630NSTRLPBF) or 9A (IRF630STRLPBF) continuous drain current, and D2PAK packaging. IRF630NSTRLPBF is manufactured by Infineon Technologies and is obsolete. IRF630STRLPBF is manufactured by Vishay Siliconix and is active in production with ROHS3 compliance. The Vishay part has slightly lower current rating (9A) and higher on-state resistance (400 mOhm).

Q: Is STB19NF20 a suitable substitute for IRF630NSTRR?

A: STB19NF20 is a higher-performance alternative that meets all primary equivalence criteria: 200V Vdss, D2PAK package, N-Channel configuration, and 4V gate threshold voltage. The part exceeds IRF630NSTRR specifications with 15A continuous drain current (versus 9.3A), 160 mOhm on-state resistance (versus 300 mOhm), and 90W power dissipation (versus 82W). This part is suitable for applications requiring enhanced current handling and reduced thermal dissipation. Operating temperature range is -55°C to 150°C (versus -55°C to 175°C for IRF630NSTRR).

Q: What packaging format differences exist among the substitute parts?

A: IRF630NSTRR is supplied in Tape & Reel (TR) format. IRF630NSTRLPBF is supplied in Cut Tape (CT). IRF630SPBF is supplied in Tube. IRF630STRLPBF and IRF630STRRPBF are supplied in Tape & Reel (TR). STB19NF20 is supplied in Cut Tape (CT) & Digi-Reel®. Packaging format affects handling, storage, and automated assembly compatibility. Verify that your procurement and assembly processes support the selected packaging format.

Q: Are all substitute parts RoHS compliant?

A: IRF630NSTRR is RoHS non-compliant. All listed substitute parts (IRF630NSTRLPBF, IRF630SPBF, IRF630STRLPBF, IRF630STRRPBF, STB19NF20) are ROHS3 compliant. If your application or regulatory environment requires RoHS compliance, any of the substitute parts satisfy this requirement.

Q: What is the maximum operating temperature difference between IRF630NSTRR and the Vishay substitutes?

A: IRF630NSTRR operates from -55°C to 175°C junction temperature. IRF630SPBF, IRF630STRLPBF, and IRF630STRRPBF operate from -55°C to 150°C. This represents a 25°C reduction in maximum junction temperature. For applications operating near the upper thermal limit, verify that the reduced maximum temperature does not compromise circuit performance or reliability.

Q: How do gate charge specifications affect switching performance?

A: IRF630NSTRR has 35 nC gate charge at 10V Vgs. IRF630SPBF, IRF630STRLPBF, and IRF630STRRPBF have 43 nC (22% higher). STB19NF20 has 24 nC (31% lower). Higher gate charge requires more drive current and extends switching time. Lower gate charge reduces drive requirements and improves switching speed. Verify that your gate drive circuit can supply the required charge for the selected part.