IRF3707SPBF N-Channel 30V 62A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF3707SPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 62A continuous drain current at 25°C. This device is packaged in D2PAK (TO-263-3) surface mount configuration and belongs to the HEXFET® series. The product status is listed as Obsolete, making identification of functionally equivalent substitute parts necessary for ongoing design support and procurement.

Substiute Parts

IRF3707SPBF

Infineon TechnologiesIn Stock: 877IRF3707SPBF Datasheet

Current PartRFQ

IPB22N03S4L15ATMA1

Infineon TechnologiesIn Stock: 15794IPB22N03S4L15ATMA1 Datasheet

MFR RecommendedRFQ

PSMN017-30BL,118

Nexperia USA Inc.In Stock: 2850PSMN017-30BL,118 Datasheet

MFR RecommendedRFQ

PSMN4R3-30BL,118

Nexperia USA Inc.In Stock: 10797PSMN4R3-30BL,118 Datasheet

MFR RecommendedRFQ

STB70NF03LT4

STMicroelectronicsIn Stock: 25184STB70NF03LT4 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IRF3707SPBF is determined by the following critical parameters:

Primary Matching Criteria:

• Drain-to-Source Voltage (Vdss): Must equal 30V
• Package Type: Must be D2PAK (TO-263-3) surface mount
• FET Type: Must be N-Channel MOSFET
• Operating Temperature Range: Must support -55°C to 175°C

Secondary Compatibility Factors:

• Continuous Drain Current (Id): Substitute must meet or exceed 62A at 25°C
• On-State Resistance (Rds On): Lower or equal values indicate improved performance
• Gate Charge (Qg): Lower values reduce drive circuit requirements
• Power Dissipation: Must support thermal requirements of the application

The substitute parts listed below satisfy the primary matching criteria and maintain electrical compatibility within the specified parameter ranges.

Parameter Comparison

Engineering Selection Recommendations

For Direct Current Replacement (62A Continuous Operation):

The STB70NF03LT4 from STMicroelectronics provides the closest performance match to the IRF3707SPBF. With 70A continuous drain current capability, it exceeds the 62A requirement while maintaining 30V Vdss rating and D2PAK packaging. The STB70NF03LT4 features lower on-state resistance (9.5 mOhm) compared to the original part (12.5 mOhm), resulting in reduced power dissipation. This device carries Active product status and ROHS3 compliance, supporting long-term availability and regulatory requirements.

For Higher Current Margin Applications:

The PSMN4R3-30BL,118 from Nexperia offers 100A continuous drain current with superior on-state resistance of 4.1 mOhm. This part is currently in Active product status with ROHS3 compliance. The increased current rating and lower resistance provide enhanced thermal performance, though gate charge is higher at 41.5 nC. This device is suitable for applications requiring additional current headroom beyond the original 62A specification.

For Lower Current Applications:

The PSMN017-30BL,118 from Nexperia provides 32A continuous drain current with 30V Vdss and D2PAK packaging. While this part does not meet the full 62A requirement, it is suitable for applications where the actual operating current is lower than the original specification. This device is Obsolete but maintains ROHS3 compliance.

Not Recommended for Direct Substitution:

The IPB22N03S4L15ATMA1 from Infineon is rated for only 22A continuous drain current, which falls below the IRF3707SPBF specification of 62A. This part is unsuitable for applications requiring the full current capability of the original device.

Frequently Asked Questions (FAQ)

Q: Can the IPB22N03S4L15ATMA1 replace the IRF3707SPBF?

A: No. The IPB22N03S4L15ATMA1 is rated for 22A continuous drain current, which is insufficient for applications requiring the IRF3707SPBF's 62A capability. This part is suitable only for lower-current applications.

Q: What is the primary advantage of the PSMN4R3-30BL,118 over the IRF3707SPBF?

A: The PSMN4R3-30BL,118 provides 100A continuous drain current with significantly lower on-state resistance (4.1 mOhm versus 12.5 mOhm). This results in reduced power dissipation and improved thermal performance. The device is currently in Active product status, ensuring long-term availability.

Q: Are all substitute parts compatible with the same PCB layout?

A: All substitute parts listed use D2PAK (TO-263-3) or equivalent surface mount packaging. Physical footprint compatibility is maintained across all recommended substitutes. However, thermal management design may require adjustment based on the power dissipation characteristics of the selected substitute.

Q: Which substitute part has the lowest gate charge?

A: The PSMN017-30BL,118 has the lowest gate charge at 10.7 nC (measured at 10V). Lower gate charge reduces drive circuit power requirements and switching losses, though this part's 32A rating does not meet the full 62A specification of the original device.

Q: What is the significance of Product Status (Active vs. Obsolete)?

A: Active product status indicates ongoing manufacturing and long-term availability from the manufacturer. Obsolete status indicates the product is no longer manufactured, though existing inventory may be available. For new designs or long-term production, Active status parts (PSMN4R3-30BL,118 and STB70NF03LT4) are preferred.

Q: Do all substitute parts meet ROHS3 compliance?

A: Yes. All substitute parts listed carry ROHS3 compliance certification. The original IRF3707SPBF is listed as REACH Unaffected. All parts maintain REACH compliance status and are suitable for applications with environmental regulatory requirements.

Q: What is the thermal performance difference between the STB70NF03LT4 and IRF3707SPBF?

A: The STB70NF03LT4 has a maximum power dissipation rating of 100W compared to the IRF3707SPBF's 87W. The lower on-state resistance of the STB70NF03LT4 (9.5 mOhm versus 12.5 mOhm) results in reduced I²R losses during operation, improving overall thermal efficiency in high-current applications.