IRF2804 N-Channel 40V 75A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF2804 is an N-Channel MOSFET manufactured by Infineon Technologies in the HEXFET® series, rated for 40V drain-source voltage and 75A continuous drain current at 25°C. The device is packaged in TO-220AB through-hole configuration with a maximum power dissipation of 330W at case temperature. The IRF2804 is classified as obsolete product status, necessitating identification of equivalent and substitute components for new designs and ongoing production support. Substitute parts must maintain electrical compatibility across drain-source voltage, continuous drain current, on-resistance characteristics, and gate drive requirements while accommodating packaging and compliance variations.

Key Parameters

Parameter	Value	Unit	Condition
Drain to Source Voltage (Vdss)	40	V	Maximum rating
Continuous Drain Current (Id)	75	A	@ 25°C (Tc)
On-Resistance (Rds On Max)	2.3	mOhm	@ 75A, 10V Vgs
Gate Threshold Voltage (Vgs th)	4	V	@ 250µA
Gate Charge (Qg Max)	240	nC	@ 10V Vgs
Input Capacitance (Ciss Max)	6450	pF	@ 25V Vds
Power Dissipation (Max)	330	W	@ Tc
Operating Temperature Range	-55 to 175	°C	Junction temperature (TJ)
Package Type	TO-220-3	—	Through-hole
FET Type	N-Channel	—	Metal Oxide MOSFET

Substitute Part Grouping Explanation

Substitution of the IRF2804 is determined by strict equivalence across the following critical parameters:

Voltage Rating: All substitute parts must maintain Vdss ≥ 40V to ensure safe operation in the original application circuit.

Continuous Drain Current: Substitute parts must support Id ≥ 75A @ 25°C to meet or exceed the original current handling capability.

On-Resistance (Rds On): The maximum on-resistance at rated current and gate drive voltage (10V) must not exceed 2.3 mOhm to maintain thermal performance and minimize power loss.

Gate Drive Compatibility: Gate threshold voltage (Vgs th) and gate charge (Qg) must be compatible with existing driver circuits. The IRF2804 specifies Vgs th = 4V @ 250µA and Qg = 240 nC @ 10V.

Package and Mounting: Substitute parts must use TO-220-3 or TO-220AB through-hole packaging to ensure mechanical and thermal interface compatibility.

Operating Temperature: All substitutes must support the full -55°C to 175°C junction temperature range.

Compliance Status: RoHS3 compliance and REACH unaffected status are preferred for new designs, though the original IRF2804 is RoHS non-compliant and obsolete.

Substitutes are grouped into three categories: direct equivalents (same electrical specifications), higher-performance alternatives (increased current or reduced on-resistance), and compatible alternatives (different electrical characteristics within acceptable application margins).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Vgs th (V)	Qg Max (nC)	Ciss Max (pF)	Pd Max (W)	Package	Status
IRF2804	Infineon	40	75	2.3	4	240	6450	330	TO-220AB	Obsolete
IRF2804PBF	Infineon	40	75	2.3	4	240	6450	300	TO-220AB	Active
IPP023N04NGXKSA1	Infineon	40	90	2.3	4	120	10000	167	TO-220-3	Active
IPP041N04NGXKSA1	Infineon	40	80	4.1	4	56	4500	94	TO-220-3	Active
IRFB3004PBF	Infineon	40	195	1.75	4	240	9200	380	TO-220AB	Active
FDP8441	Fairchild	40	80	2.7	4	280	15000	300	TO-220-3	Active
PSMN2R2-40PS,127	Nexperia	40	100	2.1	4	130	8423	306	TO-220AB	Obsolete
PSMN2R8-40PS,127	Nexperia	40	100	2.8	4	71	4491	211	TO-220AB	Obsolete
PSMN4R5-40PS,127	Nexperia	40	100	4.6	4	42.3	2683	148	TO-220AB	Obsolete
PSMN8R0-40PS,127	Nexperia	40	77	7.6	4	21	1262	86	TO-220AB	Obsolete
IPP039N04LGXKSA1	Infineon	40	80	3.9	2	78	6100	94	TO-220-3	Not For New Designs

Engineering Selection Recommendations

Direct Equivalent (Active Status):

IRF2804PBF is the direct active equivalent of the obsolete IRF2804. Both devices share identical electrical specifications (40V, 75A, 2.3 mOhm Rds On, 240 nC gate charge) and TO-220AB packaging. IRF2804PBF is RoHS3 compliant and carries active product status, making it the primary replacement for new designs and production continuity. The only difference is reduced maximum power dissipation (300W vs. 330W), which remains adequate for most applications within the original thermal envelope.

Higher-Performance Alternative (Active Status):

IRFB3004PBF provides superior current handling (195A vs. 75A) and lower on-resistance (1.75 mOhm vs. 2.3 mOhm) while maintaining 40V voltage rating and TO-220AB packaging. This device is suitable for applications requiring increased current capacity or reduced thermal dissipation. Gate charge remains at 240 nC, ensuring compatibility with existing gate drive circuits. IRFB3004PBF is RoHS3 compliant and active status.

Infineon OptiMOS™ Series Alternatives (Active Status):

IPP023N04NGXKSA1 (90A, 2.3 mOhm) and IPP041N04NGXKSA1 (80A, 4.1 mOhm) represent modern OptiMOS™ technology with reduced gate charge (120 nC and 56 nC respectively) and lower input capacitance. These devices support the original 75A requirement with margin and offer improved switching performance. Both are RoHS3 compliant and active status. IPP041N04NGXKSA1 is recommended for applications prioritizing gate drive efficiency and switching speed.

Cross-Manufacturer Alternative (Active Status):

FDP8441 (Fairchild PowerTrench®) provides 80A continuous current at 40V with 2.7 mOhm on-resistance in TO-220-3 packaging. This device is suitable for applications where cross-manufacturer sourcing is required. Higher gate charge (280 nC) and input capacitance (15000 pF) may require gate driver adjustment.

Obsolete Nexperia Devices:

PSMN2R2-40PS,127 (100A, 2.1 mOhm), PSMN2R8-40PS,127 (100A, 2.8 mOhm), PSMN4R5-40PS,127 (100A, 4.6 mOhm), and PSMN8R0-40PS,127 (77A, 7.6 mOhm) are classified as obsolete. These devices are not recommended for new designs despite active inventory availability. Use only for legacy system maintenance where exact part matching is required.

Not For New Designs:

IPP039N04LGXKSA1 carries "Not For New Designs" status and should be avoided for new applications despite meeting electrical requirements.

Frequently Asked Questions (FAQ)

Q: Can IRF2804PBF directly replace IRF2804 in existing designs?

A: Yes. IRF2804PBF is the direct active equivalent with identical electrical specifications (40V, 75A, 2.3 mOhm Rds On) and TO-220AB packaging. The reduced power dissipation rating (300W vs. 330W) does not affect compatibility in standard applications. No circuit modifications are required.

Q: What is the difference between TO-220AB and TO-220-3 packaging?

A: Both are through-hole TO-220 packages with three leads (Gate, Drain, Source). TO-220AB and TO-220-3 are functionally equivalent for PCB mounting and thermal interface. The designation difference reflects manufacturer nomenclature variations. Mechanical compatibility is maintained across both package types.

Q: Why does IPP023N04NGXKSA1 have lower gate charge (120 nC) than IRF2804 (240 nC)?

A: IPP023N04NGXKSA1 uses modern OptiMOS™ technology with optimized gate structure, resulting in reduced gate charge despite higher current rating (90A vs. 75A). Lower gate charge reduces switching losses and gate driver power consumption. This is a performance improvement, not a limitation.

Q: Is IRFB3004PBF suitable for applications designed for 75A operation?

A: Yes. IRFB3004PBF is rated for 195A continuous current, providing significant margin above the 75A requirement. The lower on-resistance (1.75 mOhm vs. 2.3 mOhm) reduces power dissipation and thermal stress. This device is suitable for direct substitution with improved thermal performance.

Q: Can I use FDP8441 (Fairchild) as a substitute for IRF2804?

A: FDP8441 meets the core electrical requirements (40V, 80A, 2.7 mOhm Rds On) and is available in TO-220-3 packaging. However, higher gate charge (280 nC vs. 240 nC) and input capacitance (15000 pF vs. 6450 pF) may require gate driver verification. Use FDP8441 only when cross-manufacturer sourcing is necessary and gate driver capability has been confirmed.

Q: Why are Nexperia PSMN series devices marked as obsolete?

A: Nexperia has transitioned these devices to obsolete status, indicating end-of-life and no new production. While inventory may remain available, these parts are not recommended for new designs. Use active-status alternatives (IRF2804PBF, IPP023N04NGXKSA1, or IRFB3004PBF) for long-term design support.

Q: What is the impact of different Rds On values on circuit performance?

A: On-resistance directly affects power dissipation (P = I²R). Lower Rds On reduces heat generation and improves efficiency. For example, IRFB3004PBF (1.75 mOhm) dissipates less power than IRF2804 (2.3 mOhm) at the same current. Higher Rds On devices (IPP041N04NGXKSA1 at 4.1 mOhm) increase thermal load and may require enhanced cooling. Select based on thermal budget and efficiency requirements.

Q: Are all substitute parts RoHS3 compliant?

A: No. IRF2804 is RoHS non-compliant. Active substitutes IRF2804PBF, IPP023N04NGXKSA1, IPP041N04NGXKSA1, and IRFB3004PBF are RoHS3 compliant. Obsolete Nexperia devices (PSMN series) are RoHS3 compliant but not recommended for new designs. Verify compliance requirements for your application before final part selection.

Q: What is the operating temperature range for all substitute parts?

A: All listed substitute parts support the full -55°C to 175°C junction temperature (TJ) range, matching the original IRF2804 specification. This ensures thermal compatibility across the entire operating envelope.

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