IRF1405Z N-Channel MOSFET 55V 75A TO-220AB Equivalent & Substitute Parts

Part Overview

The IRF1405Z is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage and 75A continuous drain current in a TO-220AB through-hole package. This device is classified as obsolete, which necessitates identification of equivalent and substitute components for new designs and production continuity. The IRF1405Z belongs to the HEXFET® series and is designed for applications requiring moderate voltage and current switching capabilities with a maximum power dissipation of 230W at the case temperature.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	75	A (Tc)
On-State Resistance (Rds On) @ 75A, 10V	4.9	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	180	nC
Maximum Power Dissipation (Tc)	230	W
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220AB	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the IRF1405Z is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must be equal to or greater than 55V
Continuous Drain Current (Id): Must be equal to or greater than 75A at case temperature
On-State Resistance (Rds On): Lower or equal values are acceptable
Package Type: TO-220AB or TO-220-3 through-hole configuration
Operating Temperature Range: Must support -55°C to 175°C
Gate Drive Voltage: Compatible with 10V drive voltage

Substitution Categories:

Category 1 - Direct Equivalent (Identical Electrical Specifications): Parts with matching Vdss (55V), Id (75A), and identical or superior Rds On characteristics in the same package.

Category 2 - Enhanced Performance Substitutes (Higher Current Rating): Parts with Vdss ≥ 55V and Id > 75A, providing increased current capacity while maintaining voltage compatibility.

Category 3 - Voltage-Elevated Substitutes (Higher Voltage Rating): Parts with Vdss > 55V and Id ≥ 75A, suitable for applications requiring higher voltage margins.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id (A)	Rds On (mOhm)	Qg (nC)	Pd Max (W)	Package	Status
IRF1405Z	Infineon	55	75	4.9	180	230	TO-220AB	Obsolete
IRF1405ZPBF	Infineon	55	75	4.9	180	230	TO-220AB	Active
IRFB3206PBF	Infineon	60	120	3.0	170	300	TO-220AB	Active
IRFB3306PBF	Infineon	60	120	4.2	120	230	TO-220AB	Active
FDP038AN06A0	onsemi	60	80	3.8	124	310	TO-220-3	Active
IXTP200N055T2	IXYS	55	200	4.2	109	360	TO-220-3	Active
IXTP230N075T2	IXYS	75	230	4.2	178	480	TO-220-3	Active
PHP191NQ06LT,127	Nexperia	55	75	3.7	95.6	300	TO-220AB	Obsolete
PSMN005-75P,127	Nexperia	75	75	5.0	165	230	TO-220AB	Active
STP185N55F3	STMicroelectronics	55	120	3.8	100	330	TO-220	Active
STP190N55LF3	STMicroelectronics	55	120	3.7	80	312	TO-220	Active

Engineering Selection Recommendations

Primary Recommendation - Direct Equivalent:

IRF1405ZPBF is the direct active equivalent of IRF1405Z. This part maintains identical electrical specifications (55V, 75A, 4.9mOhm Rds On) and is manufactured by Infineon Technologies in the same HEXFET® series. The IRF1405ZPBF is classified as Active product status and is RoHS3 compliant, making it suitable for new designs and production applications. The primary difference is packaging format (Tube vs. unspecified for the original), which does not affect electrical performance.

Secondary Recommendations - Enhanced Performance Substitutes:

For applications requiring higher current capacity or improved thermal performance, the following active parts provide enhanced specifications:

STP185N55F3 (STMicroelectronics) maintains the 55V voltage rating while providing 120A continuous drain current, 3.8mOhm Rds On, and 330W maximum power dissipation. This part is RoHS3 compliant and Active status.

STP190N55LF3 (STMicroelectronics) also maintains 55V rating with 120A current capacity, 3.7mOhm Rds On, and 312W power dissipation. This part features lower gate charge (80nC) compared to the original specification.

Voltage-Elevated Substitutes:

PSMN005-75P,127 (Nexperia) provides 75V drain-to-source voltage with 75A current rating, maintaining the same 230W power dissipation. This part is suitable for applications requiring higher voltage margins while preserving current capacity.

IXTP230N075T2 (IXYS) offers 75V rating with significantly higher current capacity (230A) and 480W power dissipation, suitable for high-current applications requiring voltage headroom.

Compliance Considerations:

All recommended active substitutes are RoHS3 compliant and REACH unaffected. The IRF1405Z and PHP191NQ06LT,127 are classified as obsolete; therefore, migration to active-status parts is recommended for long-term supply chain stability.

Frequently Asked Questions (FAQ)

Q1: Can IRF1405ZPBF be used as a direct replacement for IRF1405Z?

A: Yes. IRF1405ZPBF is the direct active equivalent manufactured by Infineon Technologies. Both parts share identical electrical specifications: 55V Vdss, 75A continuous drain current, 4.9mOhm Rds On at 75A and 10V gate drive, and 230W maximum power dissipation. The only difference is product status (Active vs. Obsolete) and packaging format (Tube). No circuit modifications are required.

Q2: What is the primary reason to substitute the IRF1405Z?

A: The IRF1405Z is classified as obsolete. Obsolete components present supply chain risks, including limited inventory availability, potential price increases, and eventual discontinuation. Substitution with active-status equivalents ensures long-term design viability and production continuity.

Q3: Can I use IRFB3206PBF or IRFB3306PBF as substitutes?

A: Yes, with design considerations. Both parts provide higher voltage rating (60V vs. 55V) and higher current capacity (120A vs. 75A). IRFB3206PBF offers lower Rds On (3.0mOhm), while IRFB3306PBF maintains similar Rds On (4.2mOhm) to the original. Both are suitable for applications where the increased current and voltage ratings do not create design conflicts. Verify that the higher current capability does not introduce thermal or layout issues in your specific application.

Q4: What is the difference between TO-220AB and TO-220-3 packages?

A: Both are through-hole packages with identical pin configurations and thermal characteristics. TO-220AB and TO-220-3 are functionally equivalent for PCB mounting and thermal management purposes. The designation difference reflects manufacturer nomenclature variations. All substitute parts listed are compatible with standard TO-220 footprints.

Q5: Why does IXTP200N055T2 have lower gate charge (109nC) than the original (180nC)?

A: Lower gate charge indicates faster switching characteristics and reduced gate drive power requirements. IXTP200N055T2 uses IXYS TrenchT2™ technology, which provides improved switching performance compared to the original HEXFET® technology. This is a performance advantage, not a limitation. Lower gate charge reduces switching losses in high-frequency applications.

Q6: Can I use STP185N55F3 in place of IRF1405Z?

A: Yes. STP185N55F3 maintains the 55V voltage rating and provides higher current capacity (120A vs. 75A) with lower Rds On (3.8mOhm vs. 4.9mOhm). The increased power dissipation rating (330W vs. 230W) provides thermal margin. This part is suitable for direct substitution with the added benefit of improved performance characteristics. STP185N55F3 is Active status and RoHS3 compliant.

Q7: Is PSMN005-75P,127 compatible with my 55V circuit design?

A: PSMN005-75P,127 is rated for 75V, which exceeds the 55V requirement. This higher voltage rating provides additional safety margin and is fully compatible with 55V circuit designs. The 75A current rating matches the original specification. This part is suitable for direct substitution and is Active status with RoHS3 compliance.

Q8: What are the thermal implications of switching from IRF1405Z to a higher-current substitute?

A: Higher-current substitutes (120A or 200A rated parts) typically feature lower Rds On values, which reduces conduction losses and heat generation at the same operating current. For example, STP185N55F3 has 3.8mOhm Rds On compared to IRF1405Z's 4.9mOhm. At 75A operation, this reduces power dissipation. However, verify that your PCB thermal design and heatsinking remain adequate for the specific application. Higher current ratings do not require increased cooling if operating current remains unchanged.

Q9: Are all substitute parts RoHS3 compliant?

A: All active-status substitute parts listed (IRF1405ZPBF, IRFB3206PBF, IRFB3306PBF, FDP038AN06A0, IXTP200N055T2, IXTP230N075T2, PSMN005-75P,127, STP185N55F3, STP190N55LF3) are RoHS3 compliant. The original IRF1405Z is RoHS non-compliant. For new designs and production requiring RoHS compliance, use only active-status substitutes.

Q10: Which substitute offers the best overall compatibility with the original IRF1405Z?

A: IRF1405ZPBF provides the best overall compatibility as the direct active equivalent. It maintains identical electrical specifications and is manufactured by the same company (Infineon Technologies) in the same product series (HEXFET®). For applications where enhanced performance is acceptable, STP185N55F3 and STP190N55LF3 offer superior specifications while maintaining the 55V voltage rating and compatible package format.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message