IRF1010NSTRR N-Channel 55V 85A MOSFET D2PAK Equivalent & Substitute Parts

Part Overview

The IRF1010NSTRR is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage and 85A continuous drain current in a D2PAK surface mount package. This device is classified as obsolete, necessitating identification of active equivalent and substitute parts for ongoing design support and procurement. The part operates across a temperature range of -55°C to 175°C and delivers 180W maximum power dissipation at the case temperature.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	85	A
On-State Resistance (Rds On) @ 43A, 10V	11	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	120	nC
Input Capacitance (Ciss) @ 25V	3210	pF
Power Dissipation (Max)	180	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-3)	—
RoHS Status	Non-compliant	—

Substitute Part Grouping Explanation

Substitution of the IRF1010NSTRR is determined by the following critical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 55V
Continuous Drain Current (Id): Must equal or exceed 85A at 25°C
Package Type: Must be D2PAK (TO-263-3) for mechanical and thermal compatibility
Operating Temperature Range: Must support -55°C to 175°C minimum
Gate Drive Voltage: Must be compatible with 10V drive specification

Secondary Compatibility Factors:

On-State Resistance (Rds On): Lower values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Affects gate drive requirements
Power Dissipation Rating: Must accommodate thermal requirements

Substitute parts are classified into two categories:

Parametric Equivalents: Parts with identical or near-identical electrical specifications and the same package type, suitable for direct replacement.

Functional Substitutes: Parts meeting or exceeding the primary criteria (Vdss, Id, package) but with different secondary characteristics, requiring application-level verification of thermal and switching performance.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Pd Max (W)	Package	Status	RoHS
IRF1010NSTRR	Infineon	55	85	11 @ 43A, 10V	120 @ 10V	3210 @ 25V	180	D2PAK	Obsolete	Non-compliant
IRF1010NSTRLPBF	Infineon	55	85	11 @ 43A, 10V	120 @ 10V	3210 @ 25V	180	D2PAK	Active	ROHS3 Compliant
BUK7610-55AL,118	Nexperia	55	75	10 @ 25A, 10V	124 @ 10V	6280 @ 25V	300	D2PAK	Obsolete	ROHS3 Compliant
BUK9612-55B,118	Nexperia	55	75	10 @ 25A, 10V	31 @ 5V	3693 @ 25V	157	D2PAK	Active	ROHS3 Compliant
HUF75545S3ST	onsemi	80	75	10 @ 75A, 10V	235 @ 20V	3750 @ 25V	270	D2PAK	Active	ROHS3 Compliant
PSMN7R6-60BS,118	Nexperia	60	92	7.8 @ 25A, 10V	38.7 @ 10V	2651 @ 30V	149	D2PAK	Active	ROHS3 Compliant
STB140NF55T4	STMicroelectronics	55	80	8 @ 40A, 10V	142 @ 10V	5300 @ 25V	300	D2PAK	Active	ROHS3 Compliant
STB60NF06T4	STMicroelectronics	60	60	16 @ 30A, 10V	66 @ 10V	1810 @ 25V	110	D2PAK	Active	ROHS3 Compliant
IPB090N06N3GATMA1	Infineon	60	50	9 @ 50A, 10V	36 @ 10V	2900 @ 30V	71	D2PAK	Active	ROHS3 Compliant
IPB50N10S3L16ATMA1	Infineon	100	50	15.4 @ 50A, 10V	64 @ 10V	4180 @ 25V	100	D2PAK	Active	ROHS3 Compliant
PSMN015-60BS,118	Nexperia	60	50	14.8 @ 15A, 10V	20.9 @ 10V	1220 @ 30V	86	D2PAK	Active	ROHS3 Compliant

Engineering Selection Recommendations

Parametric Equivalent (Direct Replacement):

IRF1010NSTRLPBF is the active equivalent of IRF1010NSTRR. Both parts share identical electrical specifications (55V, 85A, 11mOhm Rds On, 180W power dissipation) and D2PAK packaging. The primary distinction is product status and RoHS compliance: IRF1010NSTRLPBF is active and ROHS3 compliant, whereas IRF1010NSTRR is obsolete and non-compliant. This part is suitable for direct substitution in all applications without design modification.

Functional Substitutes Meeting Primary Criteria:

The following parts meet or exceed the primary substitution criteria (Vdss ≥ 55V, Id ≥ 85A, D2PAK package):

PSMN7R6-60BS,118 (Nexperia): 60V, 92A, active status, ROHS3 compliant. Exceeds current rating by 7A. Lower Rds On (7.8mOhm) and reduced gate charge (38.7nC) improve switching efficiency. Suitable for applications where higher voltage margin and lower on-state losses are beneficial.
STB140NF55T4 (STMicroelectronics): 55V, 80A, active status, ROHS3 compliant. Matches voltage rating; current rating is 5A below specification. Superior Rds On (8mOhm) and higher power dissipation (300W) provide thermal margin. Suitable for applications where thermal performance is prioritized.

Functional Substitutes with Reduced Current Rating:

The following parts do not meet the 85A minimum current requirement but provide alternative solutions for applications with lower current demands:

BUK9612-55B,118 (Nexperia): 55V, 75A, active status, ROHS3 compliant, AEC-Q101 automotive qualified. Current rating is 10A below specification. Reduced gate charge (31nC @ 5V) enables faster switching.
HUF75545S3ST (onsemi): 80V, 75A, active status, ROHS3 compliant. Provides higher voltage margin (80V vs. 55V) with 10A current reduction. Suitable for applications requiring overvoltage protection.
STB60NF06T4 (STMicroelectronics): 60V, 60A, active status, ROHS3 compliant. Significant current reduction (25A below specification). Lower input capacitance (1810pF) reduces gate drive power.

Compliance Considerations:

All recommended active substitutes are ROHS3 compliant, addressing the non-compliance status of the obsolete IRF1010NSTRR. Parts with AEC-Q101 automotive qualification (BUK9612-55B,118, BUK7610-55AL,118) are suitable for automotive applications requiring formal qualification documentation.

Frequently Asked Questions (FAQ)

Q: Can IRF1010NSTRLPBF be used as a direct replacement for IRF1010NSTRR?

A: Yes. IRF1010NSTRLPBF is the active equivalent with identical electrical specifications and D2PAK packaging. The only differences are product status (active vs. obsolete) and RoHS compliance (ROHS3 vs. non-compliant). No circuit modifications are required.

Q: What is the minimum current rating required for a substitute part?

A: The IRF1010NSTRR is rated for 85A continuous drain current at 25°C. Substitute parts must equal or exceed this rating to maintain design margin. Parts with lower current ratings (such as 75A or 60A) operate at reduced margin and require application-level thermal analysis.

Q: Why do some substitute parts have higher Vdss ratings (60V, 80V, 100V)?

A: Higher Vdss ratings provide additional voltage margin above the 55V specification. This is beneficial in applications with transient overvoltage conditions. However, higher voltage ratings typically result in increased on-state resistance and input capacitance, which may increase switching losses and gate drive requirements.

Q: What is the significance of on-state resistance (Rds On) differences?

A: On-state resistance directly affects power dissipation during conduction. Lower Rds On values reduce I²R losses. For example, PSMN7R6-60BS,118 has 7.8mOhm Rds On compared to 11mOhm for IRF1010NSTRR, resulting in approximately 29% lower conduction losses at rated current. This reduces thermal stress and may eliminate the need for additional heatsinking.

Q: Are all substitute parts available in the same D2PAK package?

A: Yes. All substitute parts listed are available in D2PAK (TO-263-3) surface mount packaging, ensuring mechanical and thermal compatibility with existing PCB layouts. Thermal performance may vary due to differences in die size and internal construction, but package footprint and mounting interface are identical.

Q: What is the difference between gate charge specifications at different Vgs values?

A: Gate charge (Qg) is measured at specific gate-source voltage levels. Lower Qg values reduce the charge that must be supplied by the gate driver, decreasing switching time and gate drive power dissipation. For example, BUK9612-55B,118 specifies 31nC @ 5V, while IRF1010NSTRR specifies 120nC @ 10V. Direct comparison requires measurement at identical Vgs levels.

Q: Which substitute part is recommended for automotive applications?

A: BUK9612-55B,118 and BUK7610-55AL,118 carry AEC-Q101 automotive qualification. BUK9612-55B,118 is active and ROHS3 compliant, making it suitable for new automotive designs. BUK7610-55AL,118 is obsolete but provides reference for legacy automotive systems.

Q: Can I use a substitute part with lower current rating if my application draws less than 85A?

A: Substitution with lower current ratings requires application-level verification. Design margin, thermal conditions, and duty cycle must be evaluated. Parts with current ratings below 85A operate closer to their maximum ratings, reducing safety margin and potentially increasing junction temperature.

Q: What is the impact of input capacitance (Ciss) on gate driver selection?

A: Input capacitance affects the charge required to switch the MOSFET and the gate driver's output impedance requirements. Higher Ciss values (such as 6280pF for BUK7610-55AL,118) require more gate charge and may necessitate gate driver upgrades. Lower Ciss values (such as 1220pF for PSMN015-60BS,118) reduce gate drive power and enable faster switching with lower-power drivers.

Q: Are there any thermal performance differences between substitute parts?

A: Yes. Power dissipation ratings vary significantly: IRF1010NSTRR is rated 180W, while STB140NF55T4 and BUK7610-55AL,118 are rated 300W. Higher power dissipation ratings indicate superior thermal performance and larger die area. Thermal performance also depends on PCB layout, heatsinking, and ambient conditions, which must be evaluated for each application.

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