IPW65R150CFDFKSA1 Equivalent & Substitute Parts

Part Overview

The IPW65R150CFDFKSA1 is an N-Channel 650V 22.4A MOSFET manufactured by Infineon Technologies in the CoolMOS™ series. This device is packaged in TO-247-3 through-hole configuration with a maximum power dissipation of 195.3W at case temperature. The part is currently listed as obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and procurement needs. Active alternatives with comparable electrical and mechanical characteristics are available from multiple manufacturers.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	22.4	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	150 mOhm @ 9.3A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	4.5	V @ 900µA
Gate Charge (Qg Max) @ Vgs	86	nC @ 10V
Input Capacitance (Ciss Max) @ Vds	2340	pF @ 100V
Power Dissipation (Max)	195.3	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package / Case	TO-247-3	Through Hole
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IPW65R150CFDFKSA1 is determined by the following critical parameters:

Voltage Rating: Drain to Source Voltage (Vdss) must be equal to or greater than 650V to maintain system voltage margin and reliability.

Current Rating: Continuous Drain Current (Id) must be equal to or greater than 22.4A at 25°C to support the application's current requirements without thermal derating.

On-State Resistance (Rds On): Maximum on-state resistance must not exceed 150 mOhm at the specified gate and drain current conditions to ensure comparable power dissipation and thermal performance.

Package Type: All substitutes must use TO-247-3 through-hole mounting to ensure mechanical and thermal interface compatibility.

Operating Temperature: Operating temperature range must encompass -55°C to 150°C (TJ) to maintain functionality across the full application temperature envelope.

Compliance: All substitutes must maintain ROHS3 compliance and equivalent moisture sensitivity level (MSL 1) for manufacturing and environmental requirements.

Substitutes are grouped into two categories: parametric equivalents (identical electrical specifications) and manufacturer-recommended alternatives (comparable performance with minor parameter variations within acceptable engineering tolerances).

Parameter Comparison

Parameter	IPW65R150CFDFKSA1	IPW65R150CFDFKSA2	IXFH36N60P	STW26N60M2	STW27N60M2-EP	TK20N60W5,S1VF
Manufacturer	Infineon	Infineon	IXYS	STMicroelectronics	STMicroelectronics	Toshiba
Vdss (V)	650	650	600	600	600	600
Id @ 25°C (A)	22.4 (Tc)	22.4 (Tc)	36 (Tc)	20 (Tc)	20 (Tc)	20 (Ta)
Rds On Max (mOhm)	150 @ 9.3A, 10V	150 @ 9.3A, 10V	190 @ 18A, 10V	165 @ 10A, 10V	163 @ 10A, 10V	175 @ 10A, 10V
Vgs(th) Max (V)	4.5 @ 900µA	4.5 @ 900µA	5 @ 4mA	4 @ 250µA	4.75 @ 250µA	4.5 @ 1mA
Qg Max (nC)	86 @ 10V	86 @ 10V	102 @ 10V	34 @ 10V	33 @ 10V	55 @ 10V
Ciss Max (pF)	2340 @ 100V	2340 @ 100V	5800 @ 25V	1360 @ 100V	1320 @ 100V	1800 @ 300V
Power Dissipation Max (W)	195.3 (Tc)	195.3 (Tc)	650 (Tc)	169 (Tc)	170 (Tc)	165 (Tc)
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Obsolete	Active	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Parametric Equivalent (Direct Replacement):

The IPW65R150CFDFKSA2 is the direct parametric equivalent to the IPW65R150CFDFKSA1. Both devices share identical electrical specifications including 650V Vdss, 22.4A continuous drain current, 150 mOhm on-state resistance, and 195.3W power dissipation. The IPW65R150CFDFKSA2 is currently in active product status and maintains full ROHS3 compliance. This part is the preferred replacement for direct substitution in existing designs without circuit modification.

Manufacturer-Recommended Alternatives:

The IXFH36N60P (IXYS) provides higher current capability (36A) and power dissipation (650W) with a reduced voltage rating of 600V. This part is suitable for applications where the 650V rating is not critical and higher current headroom is beneficial. The higher gate charge (102 nC) and input capacitance (5800 pF) require gate driver evaluation.

The STW26N60M2 and STW27N60M2-EP (STMicroelectronics) both operate at 600V with 20A continuous current. These parts feature lower gate charge (34 nC and 33 nC respectively) and reduced input capacitance compared to the original part, resulting in faster switching characteristics. The STW27N60M2-EP includes enhanced product designation (-EP) indicating automotive-grade qualification.

The TK20N60W5,S1VF (Toshiba) operates at 600V with 20A continuous current and exhibits on-state resistance of 175 mOhm. This part is suitable for applications where the 650V rating is not required and cost optimization is a consideration.

All recommended alternatives maintain TO-247-3 through-hole packaging, ROHS3 compliance, and operating temperature range compatibility with the original part.

Frequently Asked Questions (FAQ)

Q: Can the IPW65R150CFDFKSA2 be used as a direct replacement for the IPW65R150CFDFKSA1?

A: Yes. The IPW65R150CFDFKSA2 is a parametric equivalent with identical electrical and mechanical specifications. No circuit modifications are required. The primary difference is product status: the original part is obsolete while the IPW65R150CFDFKSA2 is active.

Q: Why do the STMicroelectronics alternatives (STW26N60M2 and STW27N60M2-EP) have lower voltage ratings (600V vs. 650V)?

A: The STMicroelectronics parts are rated at 600V Vdss compared to the original 650V rating. These parts are suitable for applications where system voltage does not exceed 600V. If the application requires 650V margin, the Infineon IPW65R150CFDFKSA2 or IXYS IXFH36N60P are appropriate selections.

Q: What is the significance of the gate charge (Qg) differences between substitute parts?

A: Gate charge directly affects switching speed and gate driver power requirements. The original part has 86 nC gate charge. The STMicroelectronics alternatives (33-34 nC) have significantly lower gate charge, enabling faster switching. The IXYS part (102 nC) has higher gate charge, requiring gate driver evaluation for compatibility.

Q: Are all substitute parts available in the same TO-247-3 package?

A: Yes. All substitute parts listed are packaged in TO-247-3 through-hole configuration, ensuring mechanical and thermal interface compatibility with the original part. No PCB layout modifications are required.

Q: What is the difference between the STW26N60M2 and STW27N60M2-EP?

A: Both parts share identical electrical specifications (600V, 20A, similar Rds On). The STW27N60M2-EP includes the -EP designation indicating enhanced product qualification, typically for automotive applications. The STW27N60M2-EP has marginally lower gate charge (33 nC vs. 34 nC) and input capacitance (1320 pF vs. 1360 pF).

Q: Can the IXFH36N60P be used in applications requiring 650V operation?

A: No. The IXFH36N60P is rated at 600V maximum Vdss. Applications requiring 650V system voltage margin must use the Infineon IPW65R150CFDFKSA2 or equivalent 650V-rated devices.

Q: Do all substitute parts maintain ROHS3 compliance?

A: Yes. All substitute parts listed are ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity level, matching the environmental and manufacturing requirements of the original part.

Q: What is the primary advantage of the Toshiba TK20N60W5,S1VF?

A: The Toshiba part operates at 600V with 20A continuous current and is suitable for cost-optimized designs where the 650V rating is not required. It maintains full operating temperature range compatibility (-55°C to 150°C) and ROHS3 compliance.

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