IPW65R110CFDFKSA1 N-Channel 650V 31.2A MOSFET Equivalent & Substitute Parts

Part Overview

The IPW65R110CFDFKSA1 is an N-Channel 650V 31.2A MOSFET manufactured by Infineon Technologies in the CoolMOS™ series, housed in a TO-247-3 through-hole package. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and production continuity. The part delivers 277.8W maximum power dissipation and operates across a temperature range of -55°C to 150°C (TJ). Substitution is required for applications requiring active product status or alternative packaging configurations while maintaining electrical and thermal performance specifications.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	31.2	A (Tc)
On-State Resistance (Rds On) @ 12.7A, 10V	110	mOhm
Gate Threshold Voltage (Vgs(th)) @ 1.3mA	4.5	V
Gate Charge (Qg) @ 10V	118	nC
Input Capacitance (Ciss) @ 100V	3240	pF
Maximum Gate Voltage (Vgs)	±20	V
Power Dissipation (Max)	277.8	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-247-3	Through Hole
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IPW65R110CFDFKSA1 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 650V (exact match required)
Continuous Drain Current (Id): 31.2A minimum at 25°C
On-State Resistance (Rds On): 110mOhm maximum at specified gate voltage
Package Type: TO-247-3 through-hole configuration
Operating Temperature Range: -55°C to 150°C minimum
Gate Voltage Rating (Vgs): ±20V minimum

Substitution Categories:

Category 1: Direct Parametric Equivalents Parts matching all primary electrical specifications with identical or superior performance characteristics within the same package family.

Category 2: Functional Equivalents with Enhanced Performance Parts exceeding the primary specifications (higher current rating, lower Rds On, or higher power dissipation) while maintaining 650V Vdss and TO-247-3 packaging.

Category 3: Functional Equivalents with Reduced Voltage Rating Parts rated at 600V Vdss (lower than 650V specification) suitable only for applications with maximum operating voltages below 600V.

All substitute parts must maintain N-Channel MOSFET technology, through-hole mounting, and compliance with RoHS3 and REACH requirements.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Vgs (V)	Pd Max (W)	Package	Status
IPW65R110CFDFKSA1	Infineon	650	31.2	110	118	3240	±20	277.8	TO-247-3	Obsolete
IPW65R110CFDFKSA2	Infineon	650	31.2	110	118	3240	±20	277.8	TO-247-3	Active
FCH110N65F-F155	Fairchild	650	35	110	145	4895	±20	357	TO-247-3	Active
FCH150N65F-F155	onsemi	650	24	150	94	3737	±20	298	TO-247-3	Not For New Designs
IXTH32N65X	IXYS	650	32	135	54	2205	±30	500	TO-247-3	Last Time Buy
SIHG33N65EF-GE3	Vishay Siliconix	650	31.6	109	171	4026	±30	313	TO-247-3	Active
STW30N65M5	STMicroelectronics	650	22	139	64	2880	±25	140	TO-247-3	Active
STW31N65M5	STMicroelectronics	650	22	148	45	816	±25	150	TO-247-3	Active
STW33N60DM2	STMicroelectronics	600	24	130	43	1870	±25	190	TO-247-3	Active
STW34N65M5	STMicroelectronics	650	28	110	62.5	2700	±25	190	TO-247-3	Active
STW37N60DM2AG	STMicroelectronics	600	28	110	54	2400	±25	210	TO-247-3	Active

Engineering Selection Recommendations

Tier 1: Direct Replacement (Active Status)

IPW65R110CFDFKSA2 is the direct successor to IPW65R110CFDFKSA1, manufactured by Infineon Technologies. This part maintains identical electrical specifications (650V Vdss, 31.2A Id, 110mOhm Rds On) and thermal performance (277.8W Pd Max). The primary difference is product status (Active vs. Obsolete) and packaging configuration (Tube vs. original). This part is recommended as the primary replacement for obsolete IPW65R110CFDFKSA1 applications.

Tier 2: Enhanced Performance Equivalents (Active Status, 650V Rating)

FCH110N65F-F155 (Fairchild Semiconductor) provides enhanced current capability (35A vs. 31.2A) and superior power dissipation (357W vs. 277.8W) while maintaining 650V Vdss and 110mOhm Rds On. This part is suitable for applications requiring higher thermal headroom or increased current margin.

SIHG33N65EF-GE3 (Vishay Siliconix) delivers near-identical current rating (31.6A vs. 31.2A) with 109mOhm Rds On and active product status. Higher gate charge (171nC vs. 118nC) and input capacitance (4026pF vs. 3240pF) require gate driver evaluation. Extended gate voltage rating (±30V vs. ±20V) provides additional design flexibility.

STW34N65M5 (STMicroelectronics) matches the 110mOhm Rds On specification with 28A continuous current and 650V Vdss. Reduced power dissipation (190W vs. 277.8W) limits thermal performance but maintains electrical compatibility.

Tier 3: Reduced Voltage Alternatives (Active Status, 600V Rating)

STW33N60DM2 and STW37N60DM2AG are rated at 600V Vdss (50V lower than specification). These parts are suitable only for applications with maximum operating voltages not exceeding 600V. Both maintain active product status and RoHS3 compliance.

Product Status Considerations:

IPW65R110CFDFKSA2: Active (recommended for new designs)
FCH110N65F-F155: Active
SIHG33N65EF-GE3: Active
STW30N65M5, STW31N65M5, STW34N65M5, STW37N60DM2AG: Active
FCH150N65F-F155: Not For New Designs (limited availability)
IXTH32N65X: Last Time Buy (end-of-life status)

All recommended substitutes maintain RoHS3 compliance and REACH compliance status consistent with the original part.

Frequently Asked Questions (FAQ)

Q1: Can IPW65R110CFDFKSA2 be used as a direct drop-in replacement for IPW65R110CFDFKSA1?

A: Yes. IPW65R110CFDFKSA2 is the active equivalent of IPW65R110CFDFKSA1, manufactured by Infineon Technologies. Both parts share identical electrical specifications (650V Vdss, 31.2A continuous drain current, 110mOhm Rds On, 277.8W power dissipation) and operate across -55°C to 150°C. The primary difference is product status (Active vs. Obsolete) and packaging format (Tube). Electrical and thermal performance are equivalent; no circuit modifications are required.

Q2: What is the difference between 650V and 600V rated MOSFETs in this comparison?

A: Drain to Source Voltage (Vdss) rating defines the maximum voltage the device can withstand between drain and source terminals. The IPW65R110CFDFKSA1 is rated at 650V; substitutes rated at 600V (STW33N60DM2, STW37N60DM2AG) have a 50V lower maximum rating. These 600V devices are suitable only for applications where the maximum operating voltage does not exceed 600V. Using a 600V device in a 650V application risks device failure. Verify application voltage requirements before selecting 600V alternatives.

Q3: How do gate charge (Qg) and input capacitance (Ciss) differences affect circuit design?

A: Gate charge and input capacitance determine gate driver requirements and switching speed. The IPW65R110CFDFKSA1 specifies 118nC gate charge and 3240pF input capacitance. Substitutes with higher values (e.g., SIHG33N65EF-GE3 at 171nC and 4026pF) require higher gate drive current and may increase switching losses. Substitutes with lower values (e.g., IXTH32N65X at 54nC and 2205pF) reduce gate driver stress and switching losses. Evaluate gate driver capability and switching frequency requirements when selecting alternatives with significantly different Qg or Ciss values.

Q4: What does "Last Time Buy" or "Not For New Designs" product status mean?

A: "Last Time Buy" indicates the manufacturer has announced end-of-life status; limited inventory remains available for existing customers. "Not For New Designs" indicates the part is no longer recommended for new circuit designs due to obsolescence or replacement by newer alternatives. IXTH32N65X carries "Last Time Buy" status; FCH150N65F-F155 carries "Not For New Designs" status. For new designs, select parts with "Active" product status (IPW65R110CFDFKSA2, FCH110N65F-F155, SIHG33N65EF-GE3, STW34N65M5).

Q5: Are all substitute parts RoHS3 and REACH compliant?

A: All substitute parts listed in this document are RoHS3 compliant and REACH compliant or REACH unaffected, consistent with the original IPW65R110CFDFKSA1. Compliance certifications are maintained across all recommended alternatives. Verify specific compliance documentation with the component supplier for your procurement requirements.

Q6: Can I use FCH110N65F-F155 (35A) instead of IPW65R110CFDFKSA1 (31.2A)?

A: Yes, with design verification. FCH110N65F-F155 exceeds the original specification in continuous drain current (35A vs. 31.2A), power dissipation (357W vs. 277.8W), and maintains identical Rds On (110mOhm) and Vdss (650V). Higher current capability provides additional design margin. However, higher gate charge (145nC vs. 118nC) and input capacitance (4895pF vs. 3240pF) require gate driver evaluation. Verify gate driver can supply the increased gate charge without exceeding switching frequency or thermal limits.

Q7: What is the significance of the TO-247-3 package designation?

A: TO-247-3 is a through-hole package with three leads (Gate, Drain, Source) commonly used for high-power MOSFETs. All parts in this comparison use TO-247-3 or equivalent through-hole packaging, ensuring mechanical and thermal compatibility. Mounting footprint, heatsink interface, and lead spacing are standardized across all listed alternatives. No PCB redesign is required when substituting between TO-247-3 packaged devices.

Q8: Which substitute offers the best thermal performance?

A: IXTH32N65X provides the highest maximum power dissipation (500W vs. 277.8W original specification), offering superior thermal performance. However, this part carries "Last Time Buy" status with limited availability. For active products, FCH110N65F-F155 offers the next highest power dissipation (357W). SIHG33N65EF-GE3 provides 313W dissipation with active status. Select based on application thermal requirements and product availability constraints.

Q9: How do I determine if a substitute part is suitable for my application?

A: Verify the following parameters match or exceed your application requirements: (1) Drain to Source Voltage (Vdss) must equal or exceed application maximum voltage; (2) Continuous Drain Current (Id) must equal or exceed application maximum current; (3) On-State Resistance (Rds On) must equal or be lower than original specification to maintain power dissipation limits; (4) Operating temperature range must encompass application requirements; (5) Gate voltage rating (Vgs) must accommodate your gate driver output; (6) Package type must match PCB footprint. Consult application circuit design and thermal analysis to confirm compatibility.

Q10: What is the difference between Rds On specifications at different current levels?

A: On-State Resistance (Rds On) varies with gate voltage and drain current. The IPW65R110CFDFKSA1 specifies 110mOhm at 12.7A drain current and 10V gate voltage. Different substitutes specify Rds On at different current levels (e.g., FCH110N65F-F155 at 17.5A, SIHG33N65EF-GE3 at 16.5A). Lower Rds On values reduce conduction losses and heat generation. When comparing substitutes, normalize Rds On specifications to the same gate voltage (10V) and evaluate at your application's typical operating current to accurately assess power dissipation impact.

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