Equivalent & Substitute Parts for IPP65R660CFDXKSA1

Part Overview

The IPP65R660CFDXKSA1 is an N-Channel 650V 6A MOSFET manufactured by Infineon Technologies in the CoolMOS™ series, housed in a TO-220-3 through-hole package. This device is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement continuity. The part delivers 62.5W maximum power dissipation and operates across the industrial temperature range of -55°C to 150°C.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	6	A
On-State Resistance (Rds On) @ 2.1A, 10V	660	mOhm
Gate Threshold Voltage (Vgs(th)) @ 200µA	4.5	V
Gate Charge (Qg) @ 10V	22	nC
Input Capacitance (Ciss) @ 100V	615	pF
Power Dissipation (Max)	62.5	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the IPP65R660CFDXKSA1 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 650V nominal rating
Continuous Drain Current (Id): Minimum 6A at 25°C
Package Type: TO-220-3 through-hole configuration
On-State Resistance (Rds On): Comparable performance at specified gate voltage
Operating Temperature Range: -55°C to 150°C minimum

Substitution Logic: Parts are grouped as direct substitutes when they maintain the 650V voltage class and deliver equal or greater drain current capacity while preserving the TO-220-3 package footprint. Parts with higher voltage ratings (800V, 950V) or significantly different current ratings are classified as functional alternatives suitable for specific application contexts where design margins permit voltage or current derating.

Parameter Comparison

Parameter	IPP65R660CFDXKSA1	STP11N65M2	AOT7S65L	IXFP10N60P	STP10N95K5	STP12NK80Z	STP9N65M2
Manufacturer	Infineon	STMicroelectronics	Alpha & Omega	IXYS	STMicroelectronics	STMicroelectronics	STMicroelectronics
Vdss (V)	650	650	650	600	950	800	650
Id @ 25°C (A)	6	7	7	10	8	10.5	5
Rds On @ 10V (mOhm)	660 @ 2.1A	670 @ 3.5A	650 @ 3.5A	740 @ 5A	800 @ 4A	750 @ 5.25A	900 @ 2.5A
Qg @ 10V (nC)	22	12.5	9.2	32	22	87	10
Ciss @ 100V (pF)	615	410	434	1610	630	2620	315
Power Dissipation (W)	62.5	85	104	200	130	190	60
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Not For New Designs	Active	Active	Not For New Designs	Active
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Direct Substitutes (650V Class, TO-220-3 Package):

STP11N65M2 and AOT7S65L are the primary direct substitutes for the IPP65R660CFDXKSA1. Both maintain the 650V voltage rating and TO-220-3 package configuration. STP11N65M2 carries Active product status with ROHS3 compliance, delivering 7A continuous drain current and 85W power dissipation. AOT7S65L provides equivalent voltage and current ratings with superior power dissipation (104W) but carries Not For New Designs status, limiting its suitability for new development.

STP9N65M2 is a lower-current alternative (5A) within the 650V class, suitable for applications where the 6A rating of the original part exceeds system requirements. This part maintains Active status and ROHS3 compliance.

Functional Alternatives (Higher Voltage or Current Classes):

IXFP10N60P operates at 600V with 10A continuous current, representing a lower voltage but higher current alternative. This part is Active and ROHS3 compliant, with significantly higher power dissipation (200W) and gate charge (32nC).

STP10N95K5 provides 950V voltage rating with 8A current capacity, suitable for applications requiring enhanced voltage margin. This part is Active and ROHS3 compliant.

STP12NK80Z operates at 800V with 10.5A current, offering intermediate voltage and current characteristics. This part carries Not For New Designs status and exhibits substantially higher gate charge (87nC) and input capacitance (2620pF), which may impact switching performance in high-frequency applications.

Compliance Considerations:

All substitute parts except AOT7S65L and STP12NK80Z carry Active product status. For new designs, STP11N65M2 is the recommended primary substitute, offering direct parameter compatibility with Active status and full ROHS3 compliance. For existing designs requiring component replacement, STP9N65M2 provides a conservative alternative with lower current rating but proven reliability.

Frequently Asked Questions (FAQ)

Q: Can STP11N65M2 directly replace IPP65R660CFDXKSA1 in existing PCB designs?

A: Yes. Both parts share identical TO-220-3 package geometry and pin configuration. The STP11N65M2 delivers 7A continuous current versus the original 6A specification, providing design margin. Electrical parameters including Vdss (650V), gate threshold voltage (4V), and operating temperature range (-55°C to 150°C) are compatible. No PCB modifications are required.

Q: What is the difference between the 650V and 950V substitute options?

A: The 650V class (STP11N65M2, AOT7S65L, STP9N65M2) maintains the original voltage rating, suitable for direct replacement in existing designs. The 950V class (STP10N95K5) provides higher voltage margin for applications operating near the 650V limit or requiring enhanced reliability in transient overvoltage conditions. Selection depends on circuit design margins and application requirements.

Q: Why does STP12NK80Z have significantly higher gate charge than the original part?

A: STP12NK80Z operates at 800V with 10.5A current capacity, representing a higher performance class. The 87nC gate charge reflects the larger die size required for this current rating. Higher gate charge increases switching losses and requires higher gate drive current, potentially necessitating driver circuit modifications.

Q: Is AOT7S65L suitable for new product designs?

A: AOT7S65L carries Not For New Designs status, indicating the manufacturer does not recommend this part for new development. While functionally compatible with the original IPP65R660CFDXKSA1, it is suitable only for replacement in existing products or legacy system support. For new designs, STP11N65M2 is the recommended substitute.

Q: What are the thermal implications of switching from IPP65R660CFDXKSA1 to STP11N65M2?

A: STP11N65M2 provides higher power dissipation capability (85W versus 62.5W), enabling operation at higher current levels or reduced thermal stress at equivalent power levels. The lower on-state resistance (670mOhm versus 660mOhm) results in minimal change to conduction losses. Thermal design should account for the increased power dissipation margin available with the substitute part.

Q: Are all substitute parts ROHS3 compliant?

A: All substitute parts except STP12NK80Z explicitly declare ROHS3 compliance. STP12NK80Z status is Not For New Designs, and ROHS3 compliance is confirmed in the provided data. All parts carry REACH Unaffected status and EAR99 export classification, matching the original part's regulatory profile.

Q: Can IXFP10N60P be used in applications requiring 650V operation?

A: IXFP10N60P operates at 600V maximum Vdss, which is 50V below the original 650V specification. This part is suitable only for applications where the circuit design operates below 600V or where design margins permit voltage derating. Direct substitution in 650V-rated circuits is not recommended without circuit analysis confirming adequate safety margin.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message