IPP080N06N G N-Channel 60V 80A MOSFET Equivalent & Substitute Parts

Part Overview

The IPP080N06N G is an N-Channel 60V 80A MOSFET manufactured by Infineon Technologies in the OptiMOS™ series. This device is packaged in TO-220-3 and rated for 214W power dissipation at case temperature. The part is currently listed as obsolete, making equivalent and substitute parts necessary for ongoing production and maintenance applications requiring N-Channel MOSFET functionality at 60V drain-source voltage with high continuous drain current capability.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	80	A
Rds On (Max) @ 80A, 10V	8	mOhm
Gate Charge (Qg) @ 10V	93	nC
Power Dissipation (Max)	214	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the IPP080N06N G is determined by the following critical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must be 60V or greater
Continuous Drain Current (Id): Must support 80A or greater at 25°C
Package Type: TO-220-3 or compatible through-hole package
Operating Temperature Range: Must include -55°C to 175°C
Rds On: Lower or equivalent on-resistance at rated current and gate voltage

Secondary Compatibility Factors:

Gate Charge (Qg): Affects switching speed and drive circuit requirements
Power Dissipation: Must accommodate thermal requirements of the application
Vgs(th) and Vgs(Max): Gate voltage thresholds and maximum ratings
Input Capacitance (Ciss): Influences gate drive circuit design

Substitute parts are grouped into two categories:

Category A - Direct Functional Equivalents (80A+ Current Rating): Parts meeting or exceeding the 80A continuous drain current specification with 60V Vdss rating and compatible TO-220-3 packaging.

Category B - Reduced Current Alternatives (60A-79A Current Rating): Parts with lower continuous drain current ratings (60A to 79A) suitable for applications where the full 80A capability is not required, maintaining 60V Vdss and TO-220-3 compatibility.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Pd Max (W)	Package	Status
IPP080N06N G	Infineon	60	80	8 @ 80A, 10V	93 @ 10V	214	TO-220-3	Obsolete
IRF1010EPBF	Infineon	60	84	12 @ 50A, 10V	130 @ 10V	200	TO-220-3	Not For New Designs
IRF1010EZPBF	Infineon	60	75	8.5 @ 51A, 10V	86 @ 10V	140	TO-220-3	Active
IRF1018EPBF	Infineon	60	79	8.4 @ 47A, 10V	69 @ 10V	110	TO-220-3	Active
IRFZ44VZPBF	Infineon	60	57	12 @ 34A, 10V	65 @ 10V	92	TO-220-3	Not For New Designs
PSMN3R0-60PS,127	Nexperia	60	100	3 @ 25A, 10V	130 @ 10V	306	TO-220-3	Obsolete
PSMN4R6-60PS,127	Nexperia	60	100	4.6 @ 25A, 10V	70.8 @ 10V	211	TO-220-3	Obsolete
STP60NF06L	STMicroelectronics	60	60	14 @ 30A, 10V	66 @ 4.5V	110	TO-220-3	Active
STP76NF75	STMicroelectronics	75	80	11 @ 40A, 10V	160 @ 10V	300	TO-220-3	Active

Engineering Selection Recommendations

For Active Production (Recommended Primary Choices):

IRF1010EZPBF - Active status, RoHS3 compliant, MSL 1 (unlimited moisture sensitivity). Vdss and package compatibility confirmed. Continuous drain current of 75A is suitable for applications not requiring the full 80A specification. Gate charge of 86 nC is lower than the original part, reducing gate drive circuit stress.

IRF1018EPBF - Active status, RoHS3 compliant, MSL 1 (unlimited moisture sensitivity). Continuous drain current of 79A approaches the original 80A specification. Gate charge of 69 nC is significantly lower than the original 93 nC, improving switching performance. Power dissipation of 110W is lower, requiring thermal management review.

STP60NF06L - Active status, RoHS3 compliant, MSL 1 (unlimited moisture sensitivity). STripFET™ II series. Continuous drain current of 60A is reduced from the original 80A. Suitable for applications with lower current requirements. Vgs(Max) of ±15V differs from the original ±20V specification.

STP76NF75 - Active status, RoHS3 compliant, MSL 1 (unlimited moisture sensitivity). STripFET™ II series. Vdss of 75V exceeds the original 60V specification, providing additional voltage margin. Continuous drain current of 80A matches the original specification. Gate charge of 160 nC is significantly higher than the original 93 nC.

For Legacy System Maintenance (Obsolete Parts with Available Inventory):

PSMN4R6-60PS,127 - Obsolete status, RoHS3 compliant, MSL 1 (unlimited moisture sensitivity). Continuous drain current of 100A exceeds the original specification. Rds On of 4.6 mOhm at 25A is lower than the original 8 mOhm at 80A. Power dissipation of 211W closely matches the original 214W. Available inventory: 8805 pieces.

PSMN3R0-60PS,127 - Obsolete status, RoHS3 compliant, MSL 1 (unlimited moisture sensitivity). Continuous drain current of 100A exceeds the original specification. Rds On of 3 mOhm at 25A is significantly lower. Power dissipation of 306W exceeds the original specification. Available inventory: 2280 pieces.

Selection Criteria Summary:

All substitute parts maintain TO-220-3 packaging and through-hole mounting
All substitute parts support -55°C to 175°C operating temperature range
All substitute parts are RoHS3 compliant with REACH unaffected status
Active status parts are preferred for new designs
Obsolete parts are available for legacy system support only

Frequently Asked Questions (FAQ)

Q: Can IRF1010EZPBF replace IPP080N06N G in all applications?

A: IRF1010EZPBF is compatible for applications where continuous drain current of 75A is sufficient. The part is electrically compatible with 60V Vdss and TO-220-3 packaging. Gate charge is lower (86 nC vs. 93 nC), which may improve switching performance. Power dissipation is reduced to 140W, requiring thermal design review for high-power applications.

Q: What is the difference between IRF1010EPBF and IRF1010EZPBF?

A: Both parts are from the Infineon HEXFET® series with 60V Vdss and TO-220-3 packaging. IRF1010EPBF has 84A continuous drain current and 200W power dissipation but is marked "Not For New Designs." IRF1010EZPBF has 75A continuous drain current and 140W power dissipation and is marked "Active." IRF1010EZPBF is the recommended choice for new designs.

Q: Why does STP76NF75 have 75V Vdss instead of 60V?

A: STP76NF75 is rated for 75V Vdss, which exceeds the original 60V specification. This provides additional voltage margin in applications subject to voltage transients. The part is electrically compatible and can be used as a direct substitute. The higher voltage rating does not prevent operation at 60V.

Q: Are all substitute parts RoHS3 compliant?

A: Yes, all substitute parts listed are RoHS3 compliant. The original IPP080N06N G does not specify RoHS status. All substitute parts have REACH unaffected status and are suitable for applications requiring RoHS compliance.

Q: What is the impact of different gate charge values on circuit design?

A: Gate charge (Qg) determines the amount of charge required to switch the MOSFET on and off. Lower gate charge (IRF1018EPBF at 69 nC) reduces gate drive circuit stress and power consumption. Higher gate charge (STP76NF75 at 160 nC) requires more robust gate drive circuits. The original part specifies 93 nC, placing it in the mid-range of substitute options.

Q: Can PSMN4R6-60PS,127 be used for new designs?

A: PSMN4R6-60PS,127 is marked as obsolete and is not recommended for new designs. It is available for legacy system maintenance and repair only. For new designs, select from active status parts: IRF1010EZPBF, IRF1018EPBF, STP60NF06L, or STP76NF75.

Q: What is the difference between TO-220 and TO-220AB packaging?

A: TO-220 and TO-220AB are compatible through-hole packages with identical pin configurations and thermal characteristics. The designations refer to minor manufacturing variations. All substitute parts in TO-220 or TO-220AB packaging are mechanically and electrically interchangeable with the original TO-220-3 package.

Q: Is moisture sensitivity level (MSL) important for component selection?

A: MSL indicates the maximum time a component can be stored in ambient conditions before soldering. The original part specifies MSL 3 (168 hours). All substitute parts specify MSL 1 (unlimited), which provides greater flexibility in storage and handling. MSL 1 is superior to MSL 3 for supply chain management.

Q: Can STP60NF06L be used as a direct replacement?

A: STP60NF06L is compatible for applications where 60A continuous drain current is sufficient. The part has lower Rds On (14 mOhm vs. 8 mOhm) and lower gate charge (66 nC vs. 93 nC). Vgs(Max) is ±15V instead of ±20V, which may affect gate drive circuit design. This part is suitable for reduced-current applications.

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