IPL65R210CFDAUMA2 Equivalent & Substitute Parts

Part Overview

The IPL65R210CFDAUMA2 is an N-Channel 650V MOSFET from Infineon Technologies' CoolMOS™ CFD2 series, designed for surface mount applications in the 4-PowerTSFN package. This device delivers 16.6A continuous drain current at 25°C with a maximum on-resistance of 210mOhm, suitable for high-voltage switching applications requiring efficient power dissipation up to 151W.

The IPL65R210CFDAUMA2 is designated as Last Time Buy, indicating end-of-life status. Identifying equivalent substitute parts ensures design continuity and supply chain reliability for ongoing production and maintenance requirements.

Substiute Parts

IPL65R210CFDAUMA2
Infineon TechnologiesIn Stock: 1204IPL65R210CFDAUMA2 Datasheet
IPL65R210CFDAUMA2
Current Part
IPL65R200CFD7AUMA1
Infineon TechnologiesIn Stock: 967IPL65R200CFD7AUMA1 Datasheet
IPL65R200CFD7AUMA1
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 650 V
Continuous Drain Current (Id) @ 25°C 16.6 A (Tc)
On-Resistance (Rds On Max) @ 10V 210 mOhm
Gate Threshold Voltage (Vgs th Max) 4.5 V @ 700µA
Power Dissipation (Max) 151 W (Tc)
Operating Temperature Range -40 to 150 °C (TJ)
Package Type 4-PowerTSFN (PG-VSON-4) Surface Mount
Series CoolMOS™ CFD2

Substitute Part Grouping Explanation

Substitution of the IPL65R210CFDAUMA2 is determined by the following critical parameters:

Voltage Rating Compatibility: The substitute part must maintain the 650V Vdss rating to ensure safe operation in the same circuit topology without exceeding voltage stress limits.

Package Compatibility: Both the main part and substitute must use the 4-PowerTSFN (PG-VSON-4) surface mount package to ensure PCB layout compatibility and thermal management characteristics remain unchanged.

Thermal Operating Range: The substitute must support the -40°C to 150°C operating temperature range to function across the same environmental conditions.

Gate Drive Voltage: The substitute must operate with 10V gate drive voltage to maintain compatibility with existing gate driver circuits.

Electrical Characteristics: The substitute must provide equivalent or superior performance in Rds On, gate charge, and input capacitance to ensure switching efficiency and circuit reliability.

The IPL65R200CFD7AUMA1 meets all substitution criteria through identical voltage rating, package type, temperature range, and gate drive specifications, while offering improved gate charge characteristics and lower input capacitance.

Parameter Comparison

Parameter IPL65R210CFDAUMA2 (Main) IPL65R200CFD7AUMA1 (Substitute) Unit
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS™ CFD2 CoolMOS™ CFD7
FET Type N-Channel N-Channel
Drain to Source Voltage (Vdss) 650 650 V
Continuous Drain Current (Id) @ 25°C 16.6 14 A (Tc)
On-Resistance (Rds On Max) @ 10V 210 200 mOhm
Gate Threshold Voltage (Vgs th Max) 4.5 4.5 V @ Id
Gate Charge (Qg Max) @ 10V 68 23 nC
Input Capacitance (Ciss Max) 1850 1044 pF
Power Dissipation (Max) 151 81 W (Tc)
Operating Temperature Range -40 to 150 -40 to 150 °C (TJ)
Package Type 4-PowerTSFN (PG-VSON-4) 4-PowerTSFN (PG-VSON-4) Surface Mount
Mounting Type Surface Mount Surface Mount
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 2A (4 Weeks) 2A (4 Weeks)
REACH Status REACH Unaffected REACH Unaffected
ECCN EAR99 EAR99
Product Status Last Time Buy Active

Engineering Selection Recommendations

Supply Chain Continuity: The IPL65R210CFDAUMA2 carries Last Time Buy status, indicating discontinued production. The IPL65R200CFD7AUMA1 is Active status, ensuring ongoing availability for current and future production requirements.

Compliance Alignment: Both parts maintain ROHS3 compliance, REACH Unaffected status, and identical EAR99 ECCN classification, ensuring regulatory requirements remain satisfied across design transitions.

Electrical Performance: The IPL65R200CFD7AUMA1 provides lower on-resistance (200mOhm vs. 210mOhm) and significantly reduced gate charge (23nC vs. 68nC), resulting in improved switching efficiency and reduced gate driver power consumption.

Thermal Characteristics: While the substitute exhibits lower maximum power dissipation (81W vs. 151W), this reflects improved efficiency rather than reduced capability. The identical operating temperature range (-40°C to 150°C) ensures thermal management compatibility.

Current Rating Consideration: The substitute delivers 14A continuous drain current versus 16.6A in the main part. Applications requiring the full 16.6A rating must evaluate circuit current demands against the substitute's 14A specification.

Packaging and Handling: Both parts use identical 4-PowerTSFN surface mount packages with matching MSL 2A moisture sensitivity levels, ensuring PCB assembly processes and storage requirements remain unchanged.

Frequently Asked Questions (FAQ)

Q: Can the IPL65R200CFD7AUMA1 directly replace the IPL65R210CFDAUMA2 in existing designs?

A: Direct replacement is possible for applications where continuous drain current does not exceed 14A. The identical 650V voltage rating, 4-PowerTSFN package, and -40°C to 150°C operating range ensure mechanical and thermal compatibility. Applications requiring the full 16.6A rating of the original part require circuit re-evaluation.

Q: What are the key differences between these two parts?

A: The primary differences are continuous drain current (16.6A vs. 14A), gate charge (68nC vs. 23nC), input capacitance (1850pF vs. 1044pF), and maximum power dissipation (151W vs. 81W). The substitute represents a newer CoolMOS™ CFD7 generation with improved switching characteristics and reduced parasitic capacitance.

Q: Are there any PCB layout modifications required when switching to the IPL65R200CFD7AUMA1?

A: No PCB layout modifications are required. Both parts use the identical 4-PowerTSFN package footprint. Gate driver circuits may benefit from the reduced gate charge of the substitute, potentially allowing faster switching transitions with the same driver capability.

Q: What is the impact of lower gate charge on circuit performance?

A: Lower gate charge (23nC vs. 68nC) reduces the energy required to switch the MOSFET on and off, decreasing gate driver power consumption and enabling faster switching transitions. This typically improves overall circuit efficiency and thermal performance.

Q: Does the substitute part meet the same regulatory and compliance requirements?

A: Yes. Both parts are ROHS3 compliant, REACH Unaffected, and classified as EAR99 for export control purposes. Moisture sensitivity levels are identical at MSL 2A (4 Weeks), ensuring equivalent handling and storage requirements.

Q: What should be verified before implementing the IPL65R200CFD7AUMA1 as a substitute?

A: Verify that circuit maximum continuous drain current does not exceed 14A. Confirm that the reduced maximum power dissipation (81W) is adequate for the application's thermal environment. Validate gate driver compatibility with the lower gate charge specification if switching frequency is significantly increased.

Q: Is the IPL65R200CFD7AUMA1 available in the same packaging format?

A: Yes. Both parts are supplied in Tape & Reel (TR) packaging using the identical 4-PowerTSFN (PG-VSON-4) surface mount package, ensuring compatibility with automated assembly equipment and processes.

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