IPB03N03LB N-Channel 30V 80A MOSFET Equivalent & Substitute Parts

Part Overview

The IPB03N03LB is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage and 80A continuous drain current at 25°C. This device is housed in a D2PAK (TO-263-3) surface mount package and is designed for high-current switching applications requiring 150W maximum power dissipation.

The IPB03N03LB is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for new production runs, repairs, and system upgrades. Substitute devices must maintain electrical compatibility across critical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal performance.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	80	A (Tc)
On-Resistance (Rds On Max) @ 55A, 10V	2.8	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 100µA	2	V
Gate Charge (Qg Max) @ 5V	59	nC
Power Dissipation (Max)	150	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
Input Capacitance (Ciss Max) @ 15V	7624	pF

Substitute Part Grouping Explanation

Substitution of the IPB03N03LB is determined by strict adherence to the following electrical and mechanical parameters:

Primary Compatibility Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
Package Type: Must be D2PAK (TO-263-3) surface mount
Continuous Drain Current (Id): Must support minimum 80A at 25°C
On-Resistance (Rds On): Must not exceed specified maximum values at rated conditions
Operating Temperature Range: Must span -55°C to 175°C minimum
Gate Voltage Rating (Vgs Max): Must support ±20V

Substitute Categories:

Category 1 - Parametric Equivalent (Identical Electrical Specifications): IPB03N03LB G is a direct parametric equivalent manufactured by Infineon Technologies. All electrical characteristics, thermal ratings, and package specifications are identical to the main part. This substitute differs only in packaging format (Cut Tape & Digi-Reel) and inventory status.

Category 2 - Manufacturer Recommended Substitutes (Enhanced Performance): PSMN2R7-30BL,118 and PSMN3R4-30BL,118 (NXP USA Inc.) and STB200NF03T4 (STMicroelectronics) are manufacturer-recommended alternatives. These devices maintain the 30V voltage rating and D2PAK package but offer enhanced current capacity (100A to 120A) and improved thermal performance. These parts are classified as active products with current manufacturing status.

Parameter Comparison

Parameter	IPB03N03LB	IPB03N03LB G	PSMN2R7-30BL,118	PSMN3R4-30BL,118	STB200NF03T4
Manufacturer	Infineon	Infineon	NXP USA Inc.	NXP USA Inc.	STMicroelectronics
Vdss (V)	30	30	30	30	30
Id @ 25°C (A)	80	80	100	100	120
Rds On Max (mOhm)	2.8 @ 55A, 10V	2.8 @ 55A, 10V	3.0 @ 25A, 10V	3.3 @ 25A, 10V	3.6 @ 60A, 10V
Vgs(th) Max (V)	2 @ 100µA	2 @ 100µA	2.15 @ 1mA	2.15 @ 1mA	4 @ 250µA
Qg Max (nC)	59 @ 5V	59 @ 5V	66 @ 10V	64 @ 10V	140 @ 10V
Power Dissipation Max (W)	150	150	170	114	300
Ciss Max (pF)	7624 @ 15V	7624 @ 15V	3954 @ 15V	3907 @ 15V	4950 @ 25V
Operating Temp (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	D2PAK	D2PAK	D2PAK	D2PAK	D2PAK
Product Status	Obsolete	Obsolete	Active	Active	Active
Vgs Max (V)	±20	±20	±20	±20	±20

Engineering Selection Recommendations

For Direct Replacement (Identical Specifications): IPB03N03LB G is the appropriate selection when exact electrical and thermal equivalence is required. This part maintains all performance characteristics of the original IPB03N03LB while offering improved availability through Cut Tape and Digi-Reel packaging options. Both parts are classified as obsolete; however, IPB03N03LB G currently maintains higher inventory levels (1504 Pcs vs. 1061 Pcs).

For Active Product Substitution: When transitioning to active production parts, PSMN2R7-30BL,118, PSMN3R4-30BL,118, and STB200NF03T4 are qualified alternatives. These devices are manufactured by NXP USA Inc. and STMicroelectronics respectively and maintain active product status.

PSMN2R7-30BL,118 provides the closest performance match to the original IPB03N03LB with 100A continuous drain current and 170W power dissipation. This part is suitable for applications requiring enhanced current capacity while maintaining thermal performance comparable to the original design.

STB200NF03T4 offers the highest current rating (120A) and power dissipation capability (300W). This device is appropriate for applications requiring significant thermal headroom or higher current margins. The STripFET™ III series designation indicates advanced process technology. This part is RoHS3 compliant, whereas the IPB03N03LB is RoHS non-compliant.

Compliance Considerations: STB200NF03T4 is RoHS3 compliant and suitable for applications subject to RoHS requirements. The IPB03N03LB and IPB03N03LB G are RoHS non-compliant and appropriate only for legacy systems or applications exempt from RoHS regulations. All substitute parts maintain REACH Unaffected status and EAR99 export classification.

Frequently Asked Questions (FAQ)

Q: Can IPB03N03LB G be used as a direct replacement for IPB03N03LB?

A: Yes. IPB03N03LB G is a parametric equivalent with identical electrical specifications, thermal ratings, and package configuration. The only differences are packaging format (Cut Tape & Digi-Reel vs. standard packaging) and current inventory status. No circuit modifications are required.

Q: What are the key differences between the NXP and STMicroelectronics substitutes?

A: PSMN2R7-30BL,118 and PSMN3R4-30BL,118 (NXP) maintain current ratings of 100A with power dissipation of 170W and 114W respectively. STB200NF03T4 (STMicroelectronics) provides 120A continuous current with 300W power dissipation. All three maintain the 30V voltage rating and D2PAK package. STB200NF03T4 offers the highest thermal capacity and is RoHS3 compliant.

Q: Are there any gate drive considerations when substituting these parts?

A: Gate threshold voltage (Vgs(th)) differs among substitutes. IPB03N03LB and IPB03N03LB G specify 2V @ 100µA. PSMN2R7-30BL,118 and PSMN3R4-30BL,118 specify 2.15V @ 1mA. STB200NF03T4 specifies 4V @ 250µA. Gate charge (Qg) also varies: 59nC for Infineon parts, 64-66nC for NXP parts, and 140nC for STMicroelectronics. Verify gate driver capability for the selected substitute.

Q: Can these parts be used interchangeably in existing PCB layouts?

A: Yes. All substitute parts use the D2PAK (TO-263-3) package with identical pin configuration and thermal tab placement. No PCB layout modifications are required. Thermal management design should account for differences in power dissipation ratings.

Q: What is the impact of on-resistance differences on circuit performance?

A: On-resistance (Rds On) affects conduction losses and heat generation. IPB03N03LB specifies 2.8mOhm @ 55A, 10V. Substitutes range from 3.0mOhm to 3.6mOhm at different test conditions. Higher on-resistance results in increased power dissipation at equivalent current levels. Thermal design margins should be verified for applications operating near maximum current ratings.

Q: Are all substitute parts suitable for RoHS-compliant applications?

A: Only STB200NF03T4 is RoHS3 compliant. IPB03N03LB, IPB03N03LB G, PSMN2R7-30BL,118, and PSMN3R4-30BL,118 are RoHS non-compliant. For RoHS-regulated applications, STB200NF03T4 is the only qualified substitute.

Q: What is the current availability status of these parts?

A: IPB03N03LB (1061 Pcs), IPB03N03LB G (1504 Pcs), PSMN2R7-30BL,118 (2163 Pcs), PSMN3R4-30BL,118 (2018 Pcs), and STB200NF03T4 (10292 Pcs) are all listed as new original in stock. STB200NF03T4 maintains the highest inventory level.

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