Equivalent & Substitute Parts for IPA50R500CE

Part Overview

The IPA50R500CE is an N-Channel 500V MOSFET manufactured by Infineon Technologies in the CoolMOS™ series. This device is rated for 7.6A continuous drain current at 25°C with a maximum power dissipation of 28W, housed in a TO-220-3 Full Pack through-hole package. The part is currently classified as obsolete, necessitating identification of functionally equivalent alternatives from active product lines that maintain compatibility with existing circuit designs and thermal management requirements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	7.6	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	500 mOhm @ 2.3A, 13V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	3.5	V @ 200µA
Gate Charge (Qg Max) @ Vgs	18.7	nC @ 10V
Maximum Gate Voltage (Vgs Max)	±20	V
Input Capacitance (Ciss Max) @ Vds	433	pF @ 100V
Power Dissipation (Max)	28	W (Tc)
Operating Temperature Range	-40 to 150	°C (TJ)
Mounting Type	Through Hole	TO-220-3
FET Type	N-Channel	MOSFET

Substitute Part Grouping Explanation

Substitution of the IPA50R500CE is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must equal or exceed 500V
FET Type: N-Channel MOSFET only
Mounting Type: Through Hole, TO-220-3 package family
Operating Temperature Range: Must support -40°C to 150°C minimum
Continuous Drain Current (Id): Must support minimum 7.6A at 25°C

Secondary Compatibility Parameters:

On-State Resistance (Rds On): Lower or equivalent values acceptable
Gate Charge (Qg): Lower values preferred for reduced switching losses
Input Capacitance (Ciss): Lower values preferred for faster switching
Power Dissipation: Equal or higher ratings acceptable
Gate Threshold Voltage (Vgs(th)): Must be compatible with existing gate drive circuits

Substitute parts are grouped into two categories based on voltage rating alignment:

Category A - 500V Rated Devices: Direct voltage class substitutes maintaining exact Vdss specification. These include IPA50R500CEXKSA2, IRFIB7N50APBF, STF11NM50N, and STF13NK50Z.

Category B - 600V Rated Devices: Higher voltage class substitutes providing additional voltage margin. These include STF10N60M2 and STF13N60M2. These devices are electrically compatible in 500V applications but operate with increased voltage headroom.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Qg Max (nC)	Ciss Max (pF)	Pd Max (W)	Vgs(th) Max (V)	Package	Status
IPA50R500CE	Infineon	500	7.6	500 @ 2.3A, 13V	18.7 @ 10V	433 @ 100V	28	3.5 @ 200µA	TO-220-3	Obsolete
IPA50R500CEXKSA2	Infineon	500	5.4	500 @ 2.3A, 13V	18.7 @ 10V	433 @ 100V	28	3.5 @ 200µA	TO-220-3	Active
IRFIB7N50APBF	Vishay Siliconix	500	6.6	520 @ 4A, 10V	52 @ 10V	1423 @ 25V	60	4 @ 250µA	TO-220-3	Active
STF11NM50N	STMicroelectronics	500	8.5	470 @ 4.5A, 10V	19 @ 10V	547 @ 50V	25	4 @ 250µA	TO-220-3	Active
STF13NK50Z	STMicroelectronics	500	11	480 @ 6.5A, 10V	47 @ 10V	1600 @ 25V	30	4.5 @ 100µA	TO-220-3	Active
FDPF12N50NZ	Fairchild Semiconductor	500	11.5	520 @ 5.75A, 10V	30 @ 10V	1235 @ 25V	42	5 @ 250µA	TO-220-3	Active
FDPF16N50UT	Fairchild Semiconductor	500	15	480 @ 7.5A, 10V	45 @ 10V	1945 @ 25V	38.5	5 @ 250µA	TO-220-3	Active
FQPF13N50CF	onsemi	500	13	540 @ 6.5A, 10V	56 @ 10V	2055 @ 25V	48	4 @ 250µA	TO-220-3	Active
R5011FNX	Rohm Semiconductor	500	5.4 (Tc)	520 @ 5.5A, 10V	30 @ 10V	950 @ 25V	50	4 @ 1mA	TO-220-3	Not For New Designs
STF10N60M2	STMicroelectronics	600	7.5	600 @ 4A, 10V	13.5 @ 10V	400 @ 100V	25	4 @ 250µA	TO-220-3	Active
STF13N60M2	STMicroelectronics	600	11	380 @ 5.5A, 10V	17 @ 10V	580 @ 100V	25	4 @ 250µA	TO-220-3	Active

Engineering Selection Recommendations

Primary Recommendation - Direct Replacement:

IPA50R500CEXKSA2 (Infineon Technologies) is the manufacturer-recommended direct substitute. This device maintains identical electrical specifications to the IPA50R500CE including Vdss, Rds On, gate charge, and input capacitance. The primary difference is reduced continuous drain current (5.4A vs 7.6A), which is acceptable in applications where the original 7.6A rating was not fully utilized. This part is RoHS3 compliant and carries Active product status, ensuring long-term availability and supply chain stability.

Secondary Recommendations - 500V Voltage Class:

STF11NM50N (STMicroelectronics) provides improved performance characteristics with higher continuous drain current (8.5A), lower on-state resistance (470 mOhm), and comparable gate charge (19 nC). This device is RoHS3 compliant and Active status. The MDmesh™ II technology offers enhanced switching performance.

STF13NK50Z (STMicroelectronics) offers the highest current capability (11A) among 500V substitutes with acceptable on-state resistance (480 mOhm). This device is RoHS3 compliant and Active status, suitable for applications requiring higher current headroom.

FDPF16N50UT (Fairchild Semiconductor) provides 15A continuous drain current with 480 mOhm on-state resistance and 38.5W power dissipation. This device is Active status and suitable for high-current applications.

Alternative Recommendations - 600V Voltage Class:

STF10N60M2 and STF13N60M2 (STMicroelectronics) are 600V-rated alternatives providing additional voltage margin in 500V applications. Both devices are RoHS3 compliant and Active status. The 600V rating allows operation in circuits with potential voltage transients or overshoot conditions. STF13N60M2 offers 11A current capability with superior on-state resistance (380 mOhm) and lower gate charge (17 nC).

Not Recommended for New Designs:

R5011FNX (Rohm Semiconductor) carries "Not For New Designs" status and should not be selected for new circuit implementations, despite technical compatibility.

Frequently Asked Questions (FAQ)

Q: Can IPA50R500CEXKSA2 directly replace IPA50R500CE in all applications?

A: IPA50R500CEXKSA2 is electrically compatible with identical voltage rating (500V) and on-state resistance specifications. However, the continuous drain current is reduced from 7.6A to 5.4A. Substitution is valid only if the application's maximum sustained current requirement does not exceed 5.4A. Verify circuit current demands before implementation.

Q: What is the difference between 500V and 600V rated substitutes?

A: 500V-rated devices (IPA50R500CEXKSA2, STF11NM50N, STF13NK50Z, FDPF12N50NZ, FDPF16N50UT, FQPF13N50CF) are specified for maximum 500V drain-source voltage. 600V-rated devices (STF10N60M2, STF13N60M2) are specified for maximum 600V operation. Both are electrically compatible in 500V circuits. The 600V devices provide additional voltage safety margin for circuits with potential transient overvoltage conditions.

Q: Are all substitute parts RoHS3 compliant?

A: Most active substitute parts are RoHS3 compliant, including IPA50R500CEXKSA2, IRFIB7N50APBF, STF11NM50N, STF13NK50Z, FDPF12N50NZ, FDPF16N50UT, FQPF13N50CF, STF10N60M2, and STF13N60M2. R5011FNX is RoHS3 compliant but carries "Not For New Designs" status. Verify compliance documentation for specific applications requiring RoHS certification.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IPA50R500CE specifies 18.7 nC gate charge. Substitutes with lower gate charge (STF10N60M2 at 13.5 nC, STF13N60M2 at 17 nC) reduce gate drive power requirements and enable faster switching. Substitutes with higher gate charge (FQPF13N50CF at 56 nC, STF13NK50Z at 47 nC) require higher gate drive current but are still compatible with standard gate drive circuits.

Q: What is the significance of on-state resistance (Rds On) variations?

A: On-state resistance directly affects conduction losses and heat generation. The IPA50R500CE specifies 500 mOhm at 2.3A, 13V. Substitutes with lower Rds On (STF11NM50N at 470 mOhm, STF13NK50Z at 480 mOhm, STF13N60M2 at 380 mOhm) reduce power dissipation and improve efficiency. Substitutes with higher Rds On (FQPF13N50CF at 540 mOhm, STF10N60M2 at 600 mOhm) increase conduction losses but remain functionally compatible.

Q: Are package variations between TO-220-3 and TO-220FP significant?

A: All substitute parts use TO-220-3 package family variants (TO-220-3, TO-220FP, TO-220FM, TO-220F-3). These are mechanically and electrically compatible for through-hole PCB mounting. Pin configurations are identical. Thermal performance may vary slightly based on specific package variant, but all are suitable for standard TO-220 heatsink mounting.

Q: Which substitute offers the best overall performance improvement?

A: STF13N60M2 (STMicroelectronics) provides the most comprehensive performance improvement with 600V voltage rating, 11A current capability, 380 mOhm on-state resistance (lowest among all substitutes), 17 nC gate charge, and 25W power dissipation. This device is RoHS3 compliant and Active status. Selection depends on specific application requirements for voltage margin, current capacity, and switching speed.

Q: Can substitutes be used interchangeably in existing PCB designs?

A: Yes, all substitute parts use identical TO-220-3 through-hole package pinouts and are mechanically interchangeable on existing PCBs. Electrical compatibility is confirmed for all listed substitutes. However, verify that the selected substitute's electrical specifications (particularly continuous drain current and on-state resistance) meet or exceed application requirements before implementation.

Q: What is the inventory status of substitute parts?

A: IPA50R500CEXKSA2 has 853 units in stock. STF13N60M2 has the highest inventory at 55,736 units. STF11NM50N has 16,506 units. FDPF16N50UT has 15,165 units. STF13NK50Z has 20,195 units. All listed active substitutes maintain substantial inventory levels, ensuring supply chain availability for production requirements.

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