IPA50R190CE N-Channel 500V 18.5A MOSFET Equivalent & Substitute Parts

Part Overview

The IPA50R190CE is an N-Channel 500V 18.5A MOSFET manufactured by Infineon Technologies in the CoolMOS™ series, housed in a TO-220-3 Full Pack (PG-TO220-FP) package for through-hole mounting applications. This device is classified as obsolete product status, necessitating identification of active equivalent and substitute components for ongoing design support and procurement continuity. The part delivers 32W maximum power dissipation and operates across a temperature range of -55°C to 150°C (TJ).

Due to its obsolete status, sourcing alternatives from active product lines is essential for new designs and production continuity. Substitute parts must maintain electrical compatibility across drain-source voltage, continuous drain current, on-state resistance, and thermal characteristics while accommodating packaging and operational temperature variations.

Key Parameters

Parameter	Value	Unit	Specification Condition
Drain to Source Voltage (Vdss)	500	V	Maximum rating
Continuous Drain Current (Id) @ 25°C	18.5	A	Tc condition
On-State Resistance (Rds On Max)	190	mOhm	@ 6.2A, 13V Vgs
Gate Threshold Voltage (Vgs(th) Max)	3.5	V	@ 510µA Id
Gate Charge (Qg Max)	47.2	nC	@ 10V Vgs
Input Capacitance (Ciss Max)	1137	pF	@ 100V Vds
Power Dissipation (Max)	32	W	Tc condition
Operating Temperature Range	-55 to 150	°C	TJ
Package Type	TO-220-3 Full Pack	-	PG-TO220-FP
Mounting Type	Through Hole	-	-

Substitute Part Grouping Explanation

Substitution logic for the IPA50R190CE is based on the following critical electrical and mechanical parameters:

Primary Compatibility Criteria:

Drain-Source Voltage (Vdss): Minimum 500V (equal or higher acceptable for voltage margin)
Continuous Drain Current (Id): Minimum 18.5A (equal or higher acceptable for current margin)
On-State Resistance (Rds On): Maximum 190mOhm (lower values acceptable for improved performance)
Package Type: TO-220-3 Full Pack configuration (mechanical and thermal compatibility)
Mounting Type: Through Hole (PCB assembly compatibility)

Secondary Compatibility Criteria:

Gate Threshold Voltage (Vgs(th)): Range 3.5V to 4V (acceptable for gate drive circuit compatibility)
Gate Charge (Qg): 40nC to 50nC (acceptable for switching speed and drive requirements)
Input Capacitance (Ciss): 1137pF to 1735pF (acceptable for gate drive circuit design)
Power Dissipation: Minimum 30W (thermal management compatibility)
Operating Temperature: Minimum -40°C to 150°C (functional range compatibility)

Substitute parts are grouped into two categories: direct equivalents (matching all primary criteria) and functional alternatives (meeting primary criteria with minor parameter variations acceptable within design margins).

Parameter Comparison

Parameter	IPA50R190CE	IPA50R190CEXKSA2	PJMF190N60E1_T0_00001	STF23NM50N	STF28NM50N
Manufacturer	Infineon	Infineon	Panjit	STMicroelectronics	STMicroelectronics
Vdss (V)	500	500	600	500	500
Id @ 25°C (A)	18.5	18.5	20	17	21
Rds On Max (mOhm)	190	190	190	190	158
Vgs(th) Max (V)	3.5	3.5	4	4	4
Qg Max (nC)	47.2	47.2	40	45	50
Ciss Max (pF)	1137	1137	1410	1330	1735
Power Dissipation Max (W)	32	32	38	30	35
Operating Temp Range (°C)	-55 to 150	-40 to 150	-55 to 150	150	150
Package	TO-220-3 Full Pack	TO-220-3 Full Pack	TO-220-3 Full Pack, Isolated Tab	TO-220-3 Full Pack	TO-220-3 Full Pack
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	-	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Direct Equivalent (Tier 1 - Recommended Primary Substitute):

IPA50R190CEXKSA2 is the direct equivalent substitute for IPA50R190CE. This part maintains identical electrical specifications (500V Vdss, 18.5A Id, 190mOhm Rds On) and package configuration (TO-220-3 Full Pack). The primary difference is product status transition from obsolete to active, with ROHS3 compliance certification. Operating temperature range is -40°C to 150°C (versus -55°C to 150°C for the original), which is acceptable for most industrial and commercial applications. This part is sourced from the same manufacturer (Infineon Technologies) within the CoolMOS™ CE series, ensuring design continuity and minimal qualification effort.

Functional Alternatives (Tier 2 - Secondary Substitutes):

STF28NM50N (STMicroelectronics) provides enhanced performance characteristics with 21A continuous drain current (versus 18.5A) and reduced on-state resistance of 158mOhm (versus 190mOhm), while maintaining 500V Vdss rating and TO-220-3 Full Pack package. This part offers improved thermal performance (35W dissipation) and is ROHS3 compliant. Gate charge is slightly elevated at 50nC, and input capacitance increases to 1735pF, requiring verification of gate drive circuit compatibility. Operating temperature maximum is 150°C (no lower limit specified in provided data).

STF23NM50N (STMicroelectronics) provides a conservative alternative with 17A continuous drain current (below the 18.5A requirement) and matching 190mOhm on-state resistance at 500V Vdss. This part is suitable for applications with reduced current requirements and offers ROHS3 compliance. Gate charge is 45nC and input capacitance is 1330pF. Operating temperature maximum is 150°C.

PJMF190N60E1_T0_00001 (Panjit International Inc.) offers elevated voltage rating (600V Vdss) with 20A continuous drain current and matching 190mOhm on-state resistance. This part features isolated tab configuration (ITO-220AB-F package variant) and ROHS3 compliance. Higher voltage rating provides design margin for overvoltage conditions. Gate threshold voltage is 4V and gate charge is 40nC (lower switching losses). Input capacitance increases to 1410pF. Operating temperature range is -55°C to 150°C, matching the original part. MSL rating is not applicable due to isolated tab design.

Selection Criteria by Application:

Direct replacement with minimal qualification: IPA50R190CEXKSA2
Enhanced current handling and reduced losses: STF28NM50N
Conservative current rating with cost optimization: STF23NM50N
Elevated voltage margin with isolated tab: PJMF190N60E1_T0_00001

All substitute parts are through-hole mounted in TO-220-3 Full Pack configurations, compatible with existing PCB layouts. Verification of gate drive circuit compatibility is required for parts with Ciss values exceeding 1200pF (PJMF190N60E1_T0_00001 and STF28NM50N).

Frequently Asked Questions (FAQ)

Q1: Can IPA50R190CEXKSA2 be used as a direct drop-in replacement for IPA50R190CE?

A: Yes. IPA50R190CEXKSA2 is electrically and mechanically identical to IPA50R190CE, with matching 500V Vdss, 18.5A Id, 190mOhm Rds On, and TO-220-3 Full Pack package. The primary difference is product status (active versus obsolete) and operating temperature lower limit (-40°C versus -55°C). For applications operating above -40°C, this part provides direct substitution without design modification.

Q2: What is the significance of the isolated tab in PJMF190N60E1_T0_00001?

A: The isolated tab (ITO-220AB-F package variant) electrically separates the tab from the drain connection, enabling independent thermal management without electrical coupling to the drain. This configuration is beneficial in applications requiring isolated heat sinking or where tab potential must differ from drain potential. Standard TO-220-3 Full Pack parts (IPA50R190CE, IPA50R190CEXKSA2, STF23NM50N, STF28NM50N) have tabs electrically connected to the drain.

Q3: Why does STF28NM50N have lower on-state resistance (158mOhm) than the original part (190mOhm)?

A: STF28NM50N utilizes STMicroelectronics' MDmesh™ II technology, which provides improved channel design and reduced on-state resistance at the same voltage rating. Lower Rds On results in reduced conduction losses and improved thermal performance. This is a performance enhancement, not a deviation from specification. Applications can benefit from reduced power dissipation and improved efficiency.

Q4: Are all substitute parts ROHS3 compliant?

A: Yes. IPA50R190CEXKSA2, PJMF190N60E1_T0_00001, STF23NM50N, and STF28NM50N are all ROHS3 compliant. The original IPA50R190CE does not specify RoHS status in the provided data. All substitute parts meet current environmental compliance requirements for commercial and industrial applications.

Q5: What is the impact of higher input capacitance (Ciss) in STF28NM50N and PJMF190N60E1_T0_00001?

A: Input capacitance (Ciss) affects gate drive circuit design, specifically the gate charge required for switching transitions and the drive current capability needed. STF28NM50N has Ciss of 1735pF (versus 1137pF in the original), and PJMF190N60E1_T0_00001 has 1410pF. Higher Ciss requires proportionally higher gate drive current or longer switching times. Gate drive circuits must be verified for adequate current sourcing capability. This is a design consideration, not a functional incompatibility.

Q6: Can STF23NM50N be used in applications requiring 18.5A continuous current?

A: No. STF23NM50N is rated for 17A continuous drain current, which is below the 18.5A requirement of the original part. Using this part in applications requiring 18.5A would exceed the device rating and result in thermal stress and potential failure. STF23NM50N is suitable only for applications with reduced current requirements (17A or lower).

Q7: What is the operating temperature consideration for STF23NM50N and STF28NM50N?

A: The provided data specifies only the maximum operating temperature (150°C TJ) for both STMicroelectronics parts, without indicating a minimum temperature limit. The original IPA50R190CE specifies -55°C to 150°C. For applications requiring operation below 0°C, verification of STMicroelectronics' complete datasheet is necessary to confirm minimum operating temperature. IPA50R190CEXKSA2 and PJMF190N60E1_T0_00001 explicitly support -40°C and -55°C minimum temperatures, respectively.

Q8: Is package compatibility guaranteed across all substitute parts?

A: All substitute parts use TO-220-3 Full Pack package configuration, ensuring mechanical compatibility with existing PCB footprints and through-hole assembly processes. PJMF190N60E1_T0_00001 uses the ITO-220AB-F variant with isolated tab, which maintains the same pin pitch and mounting hole spacing but differs in tab electrical connection. Thermal management design may require adjustment for isolated tab configuration. Pin-to-pin compatibility is maintained across all parts.

Q9: Which substitute part offers the best thermal performance?

A: PJMF190N60E1_T0_00001 offers the highest power dissipation rating at 38W (versus 32W for the original), combined with the lowest gate charge at 40nC, resulting in reduced switching losses. STF28NM50N provides 35W dissipation with reduced on-state resistance (158mOhm), also contributing to improved thermal performance. Both parts are suitable for applications with elevated thermal requirements. Selection depends on specific application constraints regarding voltage rating, current requirements, and gate drive circuit capability.

Q10: What compliance certifications are relevant for substitute part selection?

A: All substitute parts are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements for commercial and industrial applications. ECCN classification is EAR99 for all parts, indicating standard commercial electronics with no export restrictions. HTSUS code 8541.29.0095 applies uniformly across all parts for tariff classification purposes. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for all parts except PJMF190N60E1_T0_00001 (Not Applicable due to isolated tab design), indicating minimal moisture sensitivity and standard storage requirements.

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