IMT17-7 Equivalent & Substitute Parts

Part Overview

The IMT17-7 is a dual PNP bipolar junction transistor (BJT) array manufactured by Diodes Incorporated in a surface mount SOT-26 package. This component is designed for general-purpose switching and amplification applications requiring 50V collector-emitter breakdown voltage and 500mA maximum collector current capability.

The IMT17-7 has reached obsolete product status. Locating equivalent substitute components is necessary to support ongoing production requirements, maintenance operations, and design continuity for systems currently utilizing this transistor array.

Substiute Parts

IMT17-7

Diodes IncorporatedIn Stock: 1141IMT17-7 Datasheet

Current PartRFQ

IMT1AT110

Rohm SemiconductorIn Stock: 125275IMT1AT110 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IMT17-7 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Transistor configuration: Dual PNP array
• Collector-emitter breakdown voltage: 50V minimum
• Maximum collector current: Must support application requirements
• Power dissipation: 300mW maximum
• DC current gain (hFE): Minimum 120
• Transition frequency: Adequate for switching speed requirements
• Operating temperature range: -55°C to 150°C

Mechanical Compatibility Criteria:

• Surface mount package type
• Pin configuration compatible with SOT-23-6 footprint
• Moisture sensitivity level: MSL 1 or equivalent

Compliance Requirements:

• RoHS3 compliance
• REACH unaffected status
• EAR99 classification

The IMT1AT110 from Rohm Semiconductor qualifies as a substitute based on matching the dual PNP configuration, 50V breakdown voltage, 300mW power rating, and surface mount technology. The IMT1AT110 operates within the specified temperature range and maintains RoHS3 and REACH compliance.

Parameter Comparison

Engineering Selection Recommendations

IMT1AT110 Substitution Suitability:

The IMT1AT110 is an active product from Rohm Semiconductor and represents a viable substitute for the obsolete IMT17-7 in applications where the reduced maximum collector current specification (150mA versus 500mA) is acceptable.

Both components share identical electrical characteristics in the following areas:

• Dual PNP transistor configuration
• 50V collector-emitter breakdown voltage
• 300mW maximum power dissipation
• 100nA maximum collector cutoff current
• Minimum DC current gain of 120
• Surface mount technology
• RoHS3 compliance
• REACH unaffected status
• MSL 1 rating

The primary electrical difference is the maximum collector current rating. The IMT1AT110 is rated for 150mA maximum collector current compared to the IMT17-7's 500mA rating. Applications requiring collector currents exceeding 150mA cannot use the IMT1AT110 as a direct substitute.

The transition frequency of the IMT1AT110 (140MHz) is lower than the IMT17-7 (200MHz). Applications requiring switching speeds dependent on the higher transition frequency specification should evaluate circuit performance requirements.

Package compatibility requires verification. The IMT17-7 uses SOT-23-6 packaging while the IMT1AT110 uses SC-74/SOT-457 packaging. Physical footprint and pin assignment differences may require PCB layout modifications.

Frequently Asked Questions (FAQ)

Q: Can the IMT1AT110 replace the IMT17-7 in all applications?

A: The IMT1AT110 is suitable only for applications where the maximum collector current requirement does not exceed 150mA. Applications requiring the full 500mA collector current capability of the IMT17-7 cannot use the IMT1AT110 as a substitute.

Q: What are the package differences between these components?

A: The IMT17-7 uses a SOT-23-6 package while the IMT1AT110 uses SC-74/SOT-457 packaging. These are different physical packages with different pin configurations. PCB layout modifications are required when substituting between these packages.

Q: Are both components RoHS compliant?

A: Yes. Both the IMT17-7 and IMT1AT110 are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements.

Q: What is the significance of the transition frequency difference?

A: The IMT17-7 has a transition frequency of 200MHz while the IMT1AT110 is rated at 140MHz. For applications where switching speed is a critical design parameter, the lower transition frequency of the IMT1AT110 should be evaluated against circuit performance requirements.

Q: Are the DC current gain specifications equivalent?

A: Both components specify a minimum DC current gain (hFE) of 120. However, the test conditions differ: the IMT17-7 is tested at 100mA and 3V, while the IMT1AT110 is tested at 1mA and 6V. Gain characteristics across the full operating range should be reviewed in the respective datasheets.

Q: What is the moisture sensitivity level for these components?

A: Both components have an MSL rating of 1 (Unlimited), indicating no moisture sensitivity restrictions for storage and handling.

Q: How do the saturation voltage specifications compare?

A: The IMT17-7 specifies 600mV maximum saturation voltage at 50mA and 500mA, while the IMT1AT110 specifies 500mV maximum at 5mA and 50mA. The different test conditions reflect the different current ratings of each device.