HIP2101IB Half-Bridge Gate Driver IC Equivalent & Substitute Parts

Part Overview

The HIP2101IB is a half-bridge gate driver IC manufactured by Renesas Electronics Corporation, designed for driving N-channel MOSFETs in half-bridge configurations. This device operates with a supply voltage range of 9V to 14V and delivers peak output currents of 2A for both source and sink operations. The HIP2101IB is classified as obsolete, making identification of suitable substitute parts essential for ongoing design support and production continuity. Active equivalent parts with identical electrical and mechanical specifications are available to ensure seamless integration into existing designs.

Substiute Parts

HIP2101IB
Renesas Electronics CorporationIn Stock: 2017HIP2101IB Datasheet
HIP2101IB
Current Part
HIP2101IBZ
Renesas Electronics CorporationIn Stock: 60265HIP2101IBZ Datasheet
HIP2101IBZ
Direct

Key Parameters

Parameter Value
Driven Configuration Half-Bridge
Number of Drivers 2
Gate Type N-Channel MOSFET
Voltage - Supply 9V ~ 14V
Logic Voltage - VIL, VIH 0.8V, 2.2V
Current - Peak Output (Source, Sink) 2A, 2A
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 114 V
Rise / Fall Time (Typ) 10ns, 10ns
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount

Substitute Part Grouping Explanation

Substitution of the HIP2101IB is determined by strict equivalence across all electrical and mechanical parameters. The substitute part must maintain identical specifications in the following critical areas:

  • Driven configuration (half-bridge topology)
  • Number of independent drivers (2 channels)
  • Gate type and input signal polarity (N-channel MOSFET, non-inverting)
  • Supply voltage range (9V ~ 14V)
  • Logic input thresholds (VIL = 0.8V, VIH = 2.2V)
  • Peak output current capability (2A source, 2A sink)
  • Bootstrap voltage rating (114V maximum)
  • Switching speed characteristics (10ns rise/fall time)
  • Temperature operating range (-55°C ~ 150°C)
  • Physical package dimensions and mounting type (8-SOIC surface mount)

The HIP2101IBZ is a direct equivalent part that satisfies all substitution criteria while offering improved product status and compliance certifications.

Parameter Comparison

Parameter HIP2101IB HIP2101IBZ
Manufacturer Renesas Electronics Corporation Renesas Electronics Corporation
Category Power Management (PMIC) Power Management (PMIC)
Description IC GATE DRVR HALF-BRIDGE 8SOIC IC GATE DRVR HALF-BRIDGE 8SOIC
Driven Configuration Half-Bridge Half-Bridge
Channel Type Independent Independent
Number of Drivers 2 2
Gate Type N-Channel MOSFET N-Channel MOSFET
Voltage - Supply 9V ~ 14V 9V ~ 14V
Logic Voltage - VIL, VIH 0.8V, 2.2V 0.8V, 2.2V
Current - Peak Output (Source, Sink) 2A, 2A 2A, 2A
Input Type Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) 114 V 114 V
Rise / Fall Time (Typ) 10ns, 10ns 10ns, 10ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Product Status Obsolete Active
RoHS Status RoHS non-compliant ROHS3 Compliant
Packaging Not specified Tube

Engineering Selection Recommendations

The HIP2101IBZ is the direct substitute for the obsolete HIP2101IB. Both parts are manufactured by Renesas Electronics Corporation and share identical electrical and mechanical specifications across all critical parameters. The HIP2101IBZ offers the following advantages:

  • Active product status ensures long-term availability and manufacturing support
  • ROHS3 compliance meets current environmental and regulatory requirements
  • Tube packaging provides standard handling and storage conditions
  • Significantly higher inventory availability (60,200 units versus 2,000 units)

For applications currently using the HIP2101IB, transition to the HIP2101IBZ is a direct replacement with no circuit modifications required. The identical package footprint, pin configuration, and electrical characteristics ensure drop-in compatibility.

Frequently Asked Questions (FAQ)

Q: Can the HIP2101IBZ be used as a direct replacement for the HIP2101IB?

A: Yes. The HIP2101IBZ is a direct equivalent with identical electrical and mechanical specifications. No circuit modifications or PCB layout changes are required for substitution.

Q: What are the key differences between HIP2101IB and HIP2101IBZ?

A: The primary differences are product status (obsolete versus active), RoHS compliance (non-compliant versus ROHS3 compliant), packaging format (unspecified versus tube), and inventory availability. All electrical and mechanical parameters are identical.

Q: Are there any compatibility concerns with the 8-SOIC package?

A: No. Both parts use the identical 8-SOIC package with 0.154" width and 3.90mm dimensions. PCB footprints and soldering procedures remain unchanged.

Q: What supply voltage range does this gate driver support?

A: The HIP2101IB and HIP2101IBZ both operate with a supply voltage range of 9V to 14V.

Q: What is the maximum bootstrap voltage rating?

A: The maximum high-side bootstrap voltage is 114V for both parts.

Q: What are the output current specifications?

A: Both parts deliver peak output currents of 2A for source operation and 2A for sink operation.

Q: Does the HIP2101IBZ meet RoHS requirements?

A: Yes. The HIP2101IBZ is ROHS3 compliant. The original HIP2101IB is RoHS non-compliant.

Q: What is the operating temperature range?

A: Both parts operate across a junction temperature range of -55°C to 150°C.

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