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HIP2101IB Half-Bridge Gate Driver IC Equivalent & Substitute Parts
Part Overview
The HIP2101IB is a half-bridge gate driver IC manufactured by Renesas Electronics Corporation, designed for driving N-channel MOSFETs in half-bridge configurations. This device operates with a supply voltage range of 9V to 14V and delivers peak output currents of 2A for both source and sink operations. The HIP2101IB is classified as obsolete, making identification of suitable substitute parts essential for ongoing design support and production continuity. Active equivalent parts with identical electrical and mechanical specifications are available to ensure seamless integration into existing designs.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Voltage - Supply | 9V ~ 14V |
| Logic Voltage - VIL, VIH | 0.8V, 2.2V |
| Current - Peak Output (Source, Sink) | 2A, 2A |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 114 V |
| Rise / Fall Time (Typ) | 10ns, 10ns |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
Substitute Part Grouping Explanation
Substitution of the HIP2101IB is determined by strict equivalence across all electrical and mechanical parameters. The substitute part must maintain identical specifications in the following critical areas:
- Driven configuration (half-bridge topology)
- Number of independent drivers (2 channels)
- Gate type and input signal polarity (N-channel MOSFET, non-inverting)
- Supply voltage range (9V ~ 14V)
- Logic input thresholds (VIL = 0.8V, VIH = 2.2V)
- Peak output current capability (2A source, 2A sink)
- Bootstrap voltage rating (114V maximum)
- Switching speed characteristics (10ns rise/fall time)
- Temperature operating range (-55°C ~ 150°C)
- Physical package dimensions and mounting type (8-SOIC surface mount)
The HIP2101IBZ is a direct equivalent part that satisfies all substitution criteria while offering improved product status and compliance certifications.
Parameter Comparison
| Parameter | HIP2101IB | HIP2101IBZ |
|---|---|---|
| Manufacturer | Renesas Electronics Corporation | Renesas Electronics Corporation |
| Category | Power Management (PMIC) | Power Management (PMIC) |
| Description | IC GATE DRVR HALF-BRIDGE 8SOIC | IC GATE DRVR HALF-BRIDGE 8SOIC |
| Driven Configuration | Half-Bridge | Half-Bridge |
| Channel Type | Independent | Independent |
| Number of Drivers | 2 | 2 |
| Gate Type | N-Channel MOSFET | N-Channel MOSFET |
| Voltage - Supply | 9V ~ 14V | 9V ~ 14V |
| Logic Voltage - VIL, VIH | 0.8V, 2.2V | 0.8V, 2.2V |
| Current - Peak Output (Source, Sink) | 2A, 2A | 2A, 2A |
| Input Type | Non-Inverting | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 114 V | 114 V |
| Rise / Fall Time (Typ) | 10ns, 10ns | 10ns, 10ns |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| Product Status | Obsolete | Active |
| RoHS Status | RoHS non-compliant | ROHS3 Compliant |
| Packaging | Not specified | Tube |
Engineering Selection Recommendations
The HIP2101IBZ is the direct substitute for the obsolete HIP2101IB. Both parts are manufactured by Renesas Electronics Corporation and share identical electrical and mechanical specifications across all critical parameters. The HIP2101IBZ offers the following advantages:
- Active product status ensures long-term availability and manufacturing support
- ROHS3 compliance meets current environmental and regulatory requirements
- Tube packaging provides standard handling and storage conditions
- Significantly higher inventory availability (60,200 units versus 2,000 units)
For applications currently using the HIP2101IB, transition to the HIP2101IBZ is a direct replacement with no circuit modifications required. The identical package footprint, pin configuration, and electrical characteristics ensure drop-in compatibility.
Frequently Asked Questions (FAQ)
Q: Can the HIP2101IBZ be used as a direct replacement for the HIP2101IB?
A: Yes. The HIP2101IBZ is a direct equivalent with identical electrical and mechanical specifications. No circuit modifications or PCB layout changes are required for substitution.
Q: What are the key differences between HIP2101IB and HIP2101IBZ?
A: The primary differences are product status (obsolete versus active), RoHS compliance (non-compliant versus ROHS3 compliant), packaging format (unspecified versus tube), and inventory availability. All electrical and mechanical parameters are identical.
Q: Are there any compatibility concerns with the 8-SOIC package?
A: No. Both parts use the identical 8-SOIC package with 0.154" width and 3.90mm dimensions. PCB footprints and soldering procedures remain unchanged.
Q: What supply voltage range does this gate driver support?
A: The HIP2101IB and HIP2101IBZ both operate with a supply voltage range of 9V to 14V.
Q: What is the maximum bootstrap voltage rating?
A: The maximum high-side bootstrap voltage is 114V for both parts.
Q: What are the output current specifications?
A: Both parts deliver peak output currents of 2A for source operation and 2A for sink operation.
Q: Does the HIP2101IBZ meet RoHS requirements?
A: Yes. The HIP2101IBZ is ROHS3 compliant. The original HIP2101IB is RoHS non-compliant.
Q: What is the operating temperature range?
A: Both parts operate across a junction temperature range of -55°C to 150°C.
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