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HER105G-TP Equivalent & Substitute Parts
Part Overview
The HER105G-TP is a general-purpose rectifier diode manufactured by Micro Commercial Co, rated for 400 V DC reverse voltage and 1 A average rectified current in a DO-41 through-hole package. This device features fast recovery characteristics with a reverse recovery time of 50 ns, making it suitable for applications requiring rapid switching performance.
The HER105G-TP carries a "Not For New Designs" product status, indicating that this component is no longer recommended for new circuit development. Identifying equivalent and substitute parts is necessary to support existing designs, facilitate production continuity, and enable migration to active product alternatives that meet the same electrical and mechanical requirements.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 400 | V |
| Current - Average Rectified (Io) | 1 | A |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 1 A | V |
| Speed | Fast Recovery ≤ 500ns, > 200mA (Io) | - |
| Reverse Recovery Time (trr) | 50 | ns |
| Current - Reverse Leakage @ Vr | 5 | µA @ 400 V |
| Mounting Type | Through Hole | - |
| Package / Case | DO-204AL, DO-41, Axial | - |
| Operating Temperature - Junction | -55 to 125 | °C |
| RoHS Status | ROHS3 Compliant | - |
Substitute Part Grouping Explanation
Substitution of the HER105G-TP is determined by the following critical parameters:
Electrical Compatibility Requirements:
- Voltage - DC Reverse (Vr) (Max): Must equal or exceed 400 V
- Current - Average Rectified (Io): Must equal or exceed 1 A
- Voltage - Forward (Vf) (Max) @ If: Must not significantly exceed 1.3 V @ 1 A to maintain circuit performance
- Speed Classification: Fast Recovery (≤ 500ns) or Standard Recovery (> 500ns) characteristics affect switching behavior
Mechanical Compatibility Requirements:
- Mounting Type: Through Hole (required)
- Package / Case: DO-204AL, DO-41, or Axial configuration (interchangeable)
Compliance Requirements:
- RoHS Status: ROHS3 Compliant (mandatory for regulatory alignment)
Substitute parts are grouped into two categories based on recovery speed characteristics:
Category 1: Fast Recovery Diodes (≤ 500ns) These parts maintain the fast switching performance of the HER105G-TP and are direct functional equivalents for applications requiring rapid recovery.
Category 2: Standard Recovery Diodes (> 500ns) These parts provide equivalent voltage and current ratings but with slower recovery characteristics. Selection depends on circuit timing requirements and switching frequency tolerance.
Parameter Comparison
| Part Number | Manufacturer | Vr (Max) [V] | Io [A] | Vf (Max) @ If [V] | Speed | trr [ns] | Ir @ Vr [µA] | Temp Range [°C] | Product Status |
|---|---|---|---|---|---|---|---|---|---|
| HER105G-TP | Micro Commercial Co | 400 | 1 | 1.3 @ 1 A | Fast Recovery ≤ 500ns | 50 | 5 @ 400 V | -55 to 125 | Not For New Designs |
| 1N4004-T | Diodes Incorporated | 400 | 1 | 1 @ 1 A | Standard Recovery > 500ns | - | 5 @ 400 V | -65 to 150 | Last Time Buy |
| 1N4004GHA0G | Taiwan Semiconductor Corporation | 400 | 1 | 1 @ 1 A | Standard Recovery > 500ns | - | 5 @ 400 V | -55 to 150 | Active |
| 1N4004GHB0G | Taiwan Semiconductor Corporation | 400 | 1 | 1 @ 1 A | Standard Recovery > 500ns | - | 5 @ 400 V | -55 to 150 | Active |
| 1N4246GP-E3/73 | Vishay General Semiconductor - Diodes Division | 400 | 1 | 1.2 @ 1 A | Standard Recovery > 500ns | - | 1 @ 400 V | -65 to 160 | Active |
| 1N4936-E3/53 | Vishay General Semiconductor - Diodes Division | 400 | 1 | 1.2 @ 1 A | Fast Recovery ≤ 500ns | 200 | 5 @ 400 V | -65 to 175 | Active |
| 1N4944GP-E3/73 | Vishay General Semiconductor - Diodes Division | 400 | 1 | 1.3 @ 1 A | Fast Recovery ≤ 500ns | 150 | 1 @ 400 V | -65 to 175 | Active |
| 1N5395-E3/54 | Vishay General Semiconductor - Diodes Division | 400 | 1.5 | 1.4 @ 1.5 A | Standard Recovery > 500ns | 2000 | 5 @ 400 V | -50 to 150 | Active |
| BYW27-400GP-E3/54 | Vishay General Semiconductor - Diodes Division | 400 | 1 | 1 @ 1 A | Standard Recovery > 500ns | 3000 | 0.2 @ 400 V | -65 to 175 | Active |
| EGP10G | Fairchild Semiconductor | 400 | 1 | 1.25 @ 1 A | Fast Recovery ≤ 500ns | 50 | 5 @ 400 V | -65 to 150 | Active |
| GP10-4004E-E3/73 | Vishay General Semiconductor - Diodes Division | 400 | 1 | - | Standard Recovery > 500ns | - | - | - | Active |
Engineering Selection Recommendations
For Direct Fast Recovery Replacement (Matching HER105G-TP Speed Characteristics):
The EGP10G (Fairchild Semiconductor) provides the closest electrical match to the HER105G-TP. Both devices feature identical 50 ns reverse recovery time, 400 V rating, 1 A current capacity, and fast recovery speed classification. The EGP10G is currently in Active product status with extended temperature range (-65°C to 150°C) and maintains ROHS3 compliance. This part is suitable for applications where the 50 ns recovery time is a critical design parameter.
The 1N4944GP-E3/73 (Vishay General Semiconductor - Diodes Division) offers fast recovery performance with 150 ns reverse recovery time and is rated for extended junction temperature operation (-65°C to 175°C). Forward voltage is identical to the HER105G-TP at 1.3 V @ 1 A. This part is Active and ROHS3 compliant, making it suitable for high-temperature applications.
The 1N4936-E3/53 (Vishay General Semiconductor - Diodes Division) provides fast recovery characteristics with 200 ns reverse recovery time and extended temperature range (-65°C to 175°C). This part is Active and ROHS3 compliant.
For Standard Recovery Replacement (Lower Speed Requirements):
The 1N4004GHA0G and 1N4004GHB0G (Taiwan Semiconductor Corporation) are Active, automotive-grade parts with AEC-Q101 qualification. Both provide 400 V / 1 A ratings with standard recovery characteristics and are suitable for applications where switching speed is not a limiting factor. These parts feature extended temperature range (-55°C to 150°C) and ROHS3 compliance.
The BYW27-400GP-E3/54 (Vishay General Semiconductor - Diodes Division) is an Active part with exceptionally low reverse leakage current (0.2 nA @ 400 V) and extended temperature range (-65°C to 175°C). This part is suitable for precision applications requiring minimal leakage characteristics.
The 1N4246GP-E3/73 (Vishay General Semiconductor - Diodes Division, SUPERECTIFIER® series) is an Active part with low reverse leakage (1 µA @ 400 V) and extended temperature range (-65°C to 160°C). This part is ROHS3 compliant.
For Higher Current Applications:
The 1N5395-E3/54 (Vishay General Semiconductor - Diodes Division) provides 1.5 A average rectified current with 400 V rating, offering current margin above the 1 A requirement. This part is Active and ROHS3 compliant. Selection of this part is appropriate when circuit design requires additional current capacity or thermal margin.
Product Status Considerations:
All recommended substitute parts carry Active product status, ensuring long-term availability and continued manufacturing support. The HER105G-TP (Not For New Designs) and 1N4004-T (Last Time Buy) should not be selected for new circuit development. Existing designs using these parts should transition to Active alternatives during the next design revision cycle.
Frequently Asked Questions (FAQ)
Q: Can the HER105G-TP be directly replaced with a standard recovery diode like the 1N4004?
A: Direct replacement is possible from an electrical standpoint, as both devices share identical 400 V and 1 A ratings. However, the HER105G-TP features fast recovery (50 ns) while the 1N4004 features standard recovery (> 500ns). Substitution is valid only if circuit timing and switching frequency specifications do not depend on the faster recovery characteristic. Verify circuit performance during qualification testing.
Q: What is the difference between fast recovery and standard recovery diodes?
A: Recovery speed refers to the reverse recovery time (trr), which is the time required for a diode to stop conducting when reverse bias is applied. Fast recovery diodes (≤ 500ns) switch off more quickly, reducing switching losses and enabling higher frequency operation. Standard recovery diodes (> 500ns) are suitable for lower frequency applications and typically exhibit lower forward voltage drop. Selection depends on circuit switching frequency and efficiency requirements.
Q: Are the Taiwan Semiconductor Corporation 1N4004GHA0G and 1N4004GHB0G parts interchangeable?
A: Yes, both parts are electrically and mechanically identical. Both are rated 400 V / 1 A, feature standard recovery characteristics, carry AEC-Q101 automotive qualification, and are in Active product status. Selection between these parts may depend on supplier availability and lead time.
Q: Can the 1N5395-E3/54 (1.5 A) be used in place of the HER105G-TP (1 A)?
A: Yes, the 1N5395-E3/54 is electrically compatible and provides higher current capacity (1.5 A vs. 1 A). This substitution is valid when circuit design permits the use of a higher-rated component. The 1N5395-E3/54 features standard recovery characteristics and is suitable for applications where the additional current margin is beneficial for thermal performance or design margin.
Q: What is the significance of the DO-41 package designation?
A: DO-41 is a through-hole axial package format for discrete diodes. The package designation DO-204AL and DO-41 refer to the same physical form factor. All substitute parts listed maintain through-hole mounting compatibility, ensuring mechanical interchangeability on printed circuit boards designed for axial lead components. No PCB layout modifications are required when substituting between parts with identical package designations.
Q: Why is the BYW27-400GP-E3/54 recommended despite its 3 µs reverse recovery time?
A: The BYW27-400GP-E3/54 is recommended for applications where reverse leakage current is a critical design parameter. This part exhibits exceptionally low reverse leakage (0.2 nA @ 400 V) compared to the HER105G-TP (5 µA @ 400 V), making it suitable for precision analog circuits, high-impedance applications, or designs requiring minimal standby current. The longer recovery time is acceptable in applications where switching frequency is not a limiting factor.
Q: Are all substitute parts ROHS3 compliant?
A: Yes, all substitute parts listed in this reference carry ROHS3 compliance status, ensuring compatibility with regulatory requirements for hazardous substance restrictions. The HER105G-TP is also ROHS3 compliant.
Q: What is AEC-Q101 qualification?
A: AEC-Q101 is an automotive industry qualification standard for discrete semiconductors. Parts carrying this qualification (such as the 1N4004GHA0G and 1N4004GHB0G) have undergone rigorous testing for reliability, temperature cycling, and performance stability under automotive operating conditions. Selection of AEC-Q101 qualified parts is appropriate for automotive applications or designs requiring automotive-grade component reliability.
Q: Can the EGP10G be used as a direct replacement for the HER105G-TP?
A: Yes, the EGP10G is a direct functional equivalent. Both parts feature identical 50 ns reverse recovery time, 400 V rating, 1 A current capacity, and fast recovery speed classification. The EGP10G is in Active product status with extended temperature range (-65°C to 150°C) and ROHS3 compliance. This part is the recommended choice when fast recovery performance matching the HER105G-TP is required.
Q: What temperature range should be considered when selecting a substitute part?
A: The HER105G-TP operates over -55°C to 125°C junction temperature. Most substitute parts offer extended temperature ranges (typically -65°C to 150°C or higher). Selection of a part with equal or greater temperature range ensures compatibility with existing thermal design margins. Parts with extended temperature ranges provide additional design flexibility for future applications or thermal stress conditions.
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