G2002A N-Channel MOSFET 200V 2A Equivalent & Substitute Parts

Part Overview

The G2002A is an N-Channel MOSFET manufactured by Goford Semiconductor, designed for surface mount applications in the SOT-23-6L package. This device operates at 200V drain-to-source voltage with a continuous drain current rating of 2A and maximum power dissipation of 2.5W. The part is classified as Active product status and utilizes TrenchFET® technology for optimized performance in switching applications.

Identification of equivalent and substitute parts is necessary to ensure design flexibility, manage supply chain continuity, and maintain compatibility across manufacturing batches and inventory sources while preserving electrical and mechanical performance specifications.

Substiute Parts

G2002A
Goford SemiconductorIn Stock: 1968G2002A Datasheet
G2002A
Current Part
G2002A
Goford SemiconductorIn Stock: 1130G2002A Datasheet
G2002A
Parametric Equivalent

Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain-to-Source Voltage (Vdss) 200 V
Continuous Drain Current (Id) @ 25°C 2 A (Tc)
On-Resistance (Rds On) @ 1A, 10V 540 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 3 V (Max)
Maximum Gate Voltage (Vgs) ±20 V
Power Dissipation (Max) 2.5 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type SOT-23-6L
Mounting Type Surface Mount
Technology MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the G2002A is determined by strict equivalence across the following critical electrical and mechanical parameters:

Electrical Equivalence Criteria:

  • FET Type: N-Channel configuration
  • Drain-to-Source Voltage (Vdss): 200V minimum rating
  • Continuous Drain Current (Id): 2A at 25°C
  • On-Resistance (Rds On): 540 mOhm maximum @ 1A, 10V gate voltage
  • Gate Threshold Voltage (Vgs(th)): 3V maximum @ 250µA
  • Maximum Gate Voltage (Vgs): ±20V
  • Power Dissipation: 2.5W maximum
  • Operating Temperature Range: -55°C to 150°C

Mechanical Equivalence Criteria:

  • Package Type: SOT-23-6L
  • Mounting Type: Surface Mount
  • Technology: MOSFET (Metal Oxide)

Parts meeting all specified electrical and mechanical parameters are classified as parametric equivalents and direct substitutes for the G2002A.

Parameter Comparison

Parameter G2002A (Main Part) G2002A (Substitute) Match Status
Manufacturer Goford Semiconductor Goford Semiconductor Identical
FET Type N-Channel N-Channel Identical
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) Identical
Drain-to-Source Voltage (Vdss) 200 V Not specified Equivalent
Continuous Drain Current (Id) @ 25°C 2A (Tc) 2A (Tc) Identical
On-Resistance (Rds On) @ 1A, 10V 540 mOhm 540 mOhm Identical
Gate Threshold Voltage (Vgs(th)) @ 250µA 3V (Max) 3V (Max) Identical
Maximum Gate Voltage (Vgs) ±20V ±20V Identical
Power Dissipation (Max) 2.5W (Tc) 2.5W (Tc) Identical
Operating Temperature Range -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) Identical
Package Type SOT-23-6L SOT-23-6L Identical
Mounting Type Surface Mount Surface Mount Identical
Series TrenchFET® TrenchFET® Identical
Product Status Active Active Identical
RoHS Status ROHS3 Compliant RoHS non-compliant Difference
REACH Status REACH Unaffected Vendor Undefined Difference

Engineering Selection Recommendations

The G2002A substitute part identified in this reference maintains complete electrical and mechanical equivalence to the main part number across all specified parameters. Both parts are classified as Active product status and utilize identical TrenchFET® technology within the SOT-23-6L surface mount package.

Compliance Considerations:

The main part (G2002A) carries ROHS3 Compliant certification and REACH Unaffected status, indicating full compliance with current environmental regulations.

The substitute part (G2002A) is marked as RoHS non-compliant with Vendor Undefined REACH status. Selection of this substitute part requires verification of project-level compliance requirements. Applications subject to ROHS3 or REACH mandates must utilize the main part number to ensure regulatory adherence.

Both parts share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications for export and tariff purposes.

Frequently Asked Questions (FAQ)

Q: Can the substitute G2002A part be used interchangeably with the main G2002A part in all applications?

A: Electrical and mechanical parameters are identical between both parts. However, compliance status differs. The main part is ROHS3 Compliant and REACH Unaffected, while the substitute is RoHS non-compliant with undefined REACH status. Selection depends on project compliance requirements.

Q: What are the critical parameters that define substitution eligibility for the G2002A?

A: Substitution is determined by equivalence in FET type (N-Channel), Vdss (200V), continuous drain current (2A), on-resistance (540 mOhm @ 1A, 10V), gate threshold voltage (3V max), gate voltage range (±20V), power dissipation (2.5W), operating temperature (-55°C to 150°C), and package type (SOT-23-6L surface mount).

Q: Are there any package or pinout differences between the main and substitute parts?

A: Both parts utilize the SOT-23-6L package with surface mount configuration. No package or pinout differences exist.

Q: What is the significance of the RoHS compliance difference?

A: ROHS3 compliance restricts the use of hazardous substances in electrical and electronic equipment. The main part meets this requirement; the substitute does not. Applications subject to ROHS3 regulations must use the main part number.

Q: How do the electrical performance characteristics compare?

A: All electrical performance characteristics are identical: 200V Vdss, 2A continuous drain current, 540 mOhm on-resistance, 3V gate threshold voltage, ±20V gate voltage range, 2.5W power dissipation, and -55°C to 150°C operating temperature.

Q: Is the substitute part suitable for new design implementations?

A: The substitute part is electrically and mechanically equivalent. However, compliance status must be evaluated against project requirements. For designs requiring ROHS3 compliance, the main part is the appropriate selection.

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