FSV8100V Equivalent & Substitute Parts

Part Overview

The FSV8100V is a Schottky rectifier diode manufactured by onsemi, rated for 100 V DC reverse voltage and 8 A average rectified current in a Surface Mount TO-277-3 package. This component is classified as Not For New Designs, indicating it has been superseded in onsemi's product portfolio. Equivalent and substitute parts are necessary for applications requiring continued sourcing, design flexibility, or alternative supplier options while maintaining electrical and mechanical compatibility.

Key Parameters

Parameter	Value
Voltage - DC Reverse (Vr) (Max)	100 V
Current - Average Rectified (Io)	8 A
Voltage - Forward (Vf) (Max) @ If	670 mV @ 8 A
Technology	Schottky
Speed	Fast Recovery ≤ 500 ns, > 200 mA (Io)
Reverse Recovery Time (trr)	19.64 ns
Current - Reverse Leakage @ Vr	50 µA @ 100 V
Mounting Type	Surface Mount
Package / Case	TO-277, 3-PowerDFN
Operating Temperature - Junction	-55°C ~ 150°C
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the FSV8100V is determined by strict equivalence in the following electrical and mechanical parameters:

Core Substitution Criteria:

Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 8 A
Technology: Schottky
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Operating Temperature Range: Compatible with -55°C ~ 150°C minimum

Acceptable Parameter Variations:

Voltage - Forward (Vf) (Max) @ If: 670 mV to 680 mV @ 8 A
Current - Reverse Leakage @ Vr: 50 µA to 70 µA @ 100 V
Supplier Device Package: TO-277-3, TO-277B, or TO-277 (all within TO-277 family)

Substitute parts are grouped as Direct Manufacturer Substitutes, Similar Manufacturer Substitutes, and Parametric Equivalents based on package designation and electrical parameter alignment.

Parameter Comparison

Parameter	FSV8100V (onsemi)	DST8100S-A (Littelfuse)	V8P10-M3/86A (Vishay)	SVT8100VB_R2_00001 (Panjit)	SVT8100V_R1_00001 (Panjit)
Voltage - DC Reverse (Vr) (Max)	100 V	100 V	100 V	100 V	100 V
Current - Average Rectified (Io)	8 A	8 A	8 A	8 A	8 A
Voltage - Forward (Vf) (Max) @ If	670 mV @ 8 A	680 mV @ 8 A	680 mV @ 8 A	670 mV @ 8 A	670 mV @ 8 A
Speed	Fast Recovery ≤ 500 ns, > 200 mA (Io)	Fast Recovery ≤ 500 ns, > 200 mA (Io)	Fast Recovery ≤ 500 ns, > 200 mA (Io)	Fast Recovery ≤ 500 ns, > 200 mA (Io)	Fast Recovery ≤ 500 ns, > 200 mA (Io)
Current - Reverse Leakage @ Vr	50 µA @ 100 V	70 µA @ 100 V	70 µA @ 100 V	50 µA @ 100 V	50 µA @ 100 V
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-277, 3-PowerDFN	TO-277, 3-PowerDFN	TO-277, 3-PowerDFN	TO-277, 3-PowerDFN	TO-277, 3-PowerDFN
Supplier Device Package	TO-277-3	TO-277B	TO-277A (SMPC)	TO-277B	TO-277
Operating Temperature - Junction	-55°C ~ 150°C	-55°C ~ 150°C	-40°C ~ 150°C	-55°C ~ 150°C	-55°C ~ 150°C
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Product Status	Not For New Designs	Active	Active	Active	Active

Engineering Selection Recommendations

DST8100S-A (Littelfuse Inc.) is a direct manufacturer substitute with Active product status. This part meets all electrical specifications with forward voltage of 680 mV @ 8 A and reverse leakage of 70 µA @ 100 V, both within acceptable tolerance of the FSV8100V. The DST8100S-A carries AEC-Q101 automotive qualification and is supplied in TO-277B package. This part is suitable for applications requiring automotive-grade reliability.

V8P10-M3/86A (Vishay General Semiconductor - Diodes Division) is a similar manufacturer substitute with Active product status. Electrical parameters match DST8100S-A specifications. The V8P10-M3/86A is supplied in TO-277A (SMPC) package and operates across -40°C ~ 150°C junction temperature range. This part is suitable for applications where the upper temperature limit of -40°C is acceptable.

SVT8100VB_R2_00001 (Panjit International Inc.) is a parametric equivalent with Active product status. This part matches the FSV8100V electrical specifications exactly, with forward voltage of 670 mV @ 8 A and reverse leakage of 50 µA @ 100 V. The SVT8100VB_R2_00001 is supplied in TO-277B package and operates across -55°C ~ 150°C junction temperature range.

SVT8100V_R1_00001 (Panjit International Inc.) is a parametric equivalent with Active product status. Electrical specifications are identical to SVT8100VB_R2_00001. The SVT8100V_R1_00001 is supplied in TO-277 package and operates across -55°C ~ 150°C junction temperature range. Lower inventory availability (1004 Pcs) compared to other substitutes.

All substitute parts are ROHS3 compliant, REACH unaffected, and carry MSL 1 (Unlimited) moisture sensitivity rating, matching the FSV8100V compliance profile.

Frequently Asked Questions (FAQ)

Q: Can DST8100S-A replace FSV8100V in all applications?

A: DST8100S-A meets all core electrical requirements (100 V, 8 A, Schottky technology, fast recovery). The forward voltage difference of 10 mV (680 mV vs. 670 mV @ 8 A) and reverse leakage difference of 20 µA (70 µA vs. 50 µA @ 100 V) are within acceptable engineering tolerances for most rectifier applications. Package compatibility exists between TO-277-3 and TO-277B variants. Verify application-specific thermal and leakage requirements before selection.

Q: What is the difference between TO-277-3, TO-277B, and TO-277A packages?

A: All three are variants within the TO-277 family, 3-PowerDFN case style. TO-277-3 is the onsemi designation, TO-277B is the Littelfuse and Panjit designation, and TO-277A (SMPC) is the Vishay designation. These packages are mechanically and electrically compatible for PCB layout and thermal performance purposes.

Q: Why does V8P10-M3/86A have a lower minimum operating temperature (-40°C vs. -55°C)?

A: V8P10-M3/86A is specified with a junction temperature range of -40°C ~ 150°C, compared to -55°C ~ 150°C for FSV8100V and other substitutes. This reflects Vishay's device characterization. Applications requiring operation below -40°C junction temperature must use FSV8100V, SVT8100VB_R2_00001, or SVT8100V_R1_00001.

Q: Are Panjit substitutes (SVT8100VB_R2_00001 and SVT8100V_R1_00001) interchangeable?

A: Both Panjit parts are parametric equivalents with identical electrical specifications (670 mV @ 8 A forward voltage, 50 µA @ 100 V reverse leakage, -55°C ~ 150°C operating range). The primary difference is package designation: SVT8100VB_R2_00001 uses TO-277B, while SVT8100V_R1_00001 uses TO-277. Verify PCB footprint compatibility with your design before selection.

Q: What is the significance of Product Status "Not For New Designs" for FSV8100V?

A: This status indicates onsemi has discontinued the FSV8100V for new product development. All substitute parts listed carry Active product status, ensuring long-term availability and continued manufacturer support. For new designs, selection from active substitute parts is recommended.

Q: How do reverse leakage specifications affect circuit performance?

A: Reverse leakage current (50 µA to 70 µA @ 100 V) represents DC leakage when the diode is reverse-biased. Higher leakage (DST8100S-A and V8P10-M3/86A at 70 µA) may impact low-power standby circuits or high-impedance applications. Lower leakage (FSV8100V, SVT8100VB_R2_00001, and SVT8100V_R1_00001 at 50 µA) is preferred for precision rectification. Verify application leakage budget before substitution.

Q: Is inventory availability a factor in part selection?

A: Inventory levels are provided for reference: FSV8100V (35100 Pcs), DST8100S-A (10200 Pcs), V8P10-M3/86A (16100 Pcs), SVT8100VB_R2_00001 (5469 Pcs), and SVT8100V_R1_00001 (1004 Pcs). Inventory status is subject to change and should be verified with suppliers for production requirements.

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