FR306G Equivalent & Substitute Parts

Part Overview

The FR306G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 800 V DC reverse voltage and 3 A average rectified current in a DO-201AD axial through-hole package. This component is classified as a fast recovery diode with a reverse recovery time of 500 ns, suitable for standard rectification applications requiring rapid switching characteristics. The part is Active in product status and fully compliant with RoHS3 and REACH regulations. Equivalent and substitute parts are identified to support design flexibility, inventory management, and supply chain continuity for applications where the FR306G specifications are met by alternative manufacturers' offerings.

Substiute Parts

FR306G
Taiwan Semiconductor CorporationIn Stock: 850FR306G Datasheet
FR306G
Current Part
1N5407-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 60141N5407-E3/54 Datasheet
1N5407-E3/54
Similar
1N5407-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 54781N5407-E3/73 Datasheet
1N5407-E3/73
Similar
GP30K-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 3536GP30K-E3/54 Datasheet
GP30K-E3/54
Similar

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 800 V
Current - Average Rectified (Io) 3 A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 3 A V
Reverse Recovery Time (trr) 500 ns
Current - Reverse Leakage @ Vr 5 µA @ 800 V
Package / Case DO-201AD, Axial
Mounting Type Through Hole
Operating Temperature - Junction -55 to 150 °C
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution eligibility for the FR306G is determined by strict equivalence across the following critical parameters: DC reverse voltage rating (800 V), average rectified current (3 A), package type (DO-201AD axial through-hole), mounting configuration (through-hole), and regulatory compliance (RoHS3 and REACH). All identified substitute parts meet these core requirements. Differences in forward voltage drop, reverse recovery time, reverse leakage current, and junction temperature range are noted but do not disqualify substitution when the primary electrical and mechanical specifications align. The substitute parts listed—1N5407-E3/54, 1N5407-E3/73, and GP30K-E3/54—are all manufactured by Vishay General Semiconductor and share identical voltage and current ratings with the FR306G while maintaining compatible package and mounting specifications.

Parameter Comparison

Parameter FR306G (Main) 1N5407-E3/54 1N5407-E3/73 GP30K-E3/54
Manufacturer Taiwan Semiconductor Corporation Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Voltage - DC Reverse (Vr) (Max) 800 V 800 V 800 V 800 V
Current - Average Rectified (Io) 3 A 3 A 3 A 3 A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 3 A 1.2 V @ 3 A 1.2 V @ 3 A 1.1 V @ 3 A
Speed Classification Fast Recovery ≤ 500 ns Standard Recovery > 500 ns Standard Recovery > 500 ns Standard Recovery > 500 ns
Reverse Recovery Time (trr) 500 ns Not specified Not specified 5 µs
Current - Reverse Leakage @ Vr 5 µA @ 800 V 5 µA @ 800 V 5 µA @ 800 V 5 µA @ 800 V
Capacitance @ Vr, F 30 pF @ 4 V, 1 MHz 30 pF @ 4 V, 1 MHz 30 pF @ 4 V, 1 MHz 40 pF @ 4 V, 1 MHz
Package / Case DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial
Mounting Type Through Hole Through Hole Through Hole Through Hole
Operating Temperature - Junction -55 to 150 °C -50 to 150 °C -50 to 150 °C -65 to 175 °C
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected REACH Unaffected
Product Status Active Active Active Active

Engineering Selection Recommendations

All three substitute parts—1N5407-E3/54, 1N5407-E3/73, and GP30K-E3/54—are functionally equivalent to the FR306G for applications requiring 800 V, 3 A rectification in DO-201AD through-hole packages. Each substitute maintains Active product status and full compliance with RoHS3 and REACH regulations, ensuring regulatory continuity in design implementations.

The 1N5407-E3/54 and 1N5407-E3/73 variants are electrically identical, differing only in packaging tape configuration (54 and 73 designations). Both exhibit lower forward voltage drop (1.2 V versus 1.3 V) compared to the FR306G, resulting in reduced power dissipation. These parts operate within a slightly narrower junction temperature range (-50 to 150 °C) relative to the FR306G (-55 to 150 °C).

The GP30K-E3/54, designated as part of the SUPERECTIFIER® series, offers the lowest forward voltage drop (1.1 V) and the widest operating temperature range (-65 to 175 °C). This part exhibits a longer reverse recovery time (5 µs) and slightly higher capacitance (40 pF) compared to the FR306G, characteristics that may be relevant in high-frequency switching applications.

Selection among these substitutes depends on application-specific requirements for forward voltage efficiency, temperature operating margins, and switching speed characteristics, all of which are provided in the parameter comparison table.

Frequently Asked Questions (FAQ)

Q: Can the 1N5407-E3/54 directly replace the FR306G in existing designs?

A: Yes. Both parts share identical voltage (800 V), current (3 A), and package specifications (DO-201AD through-hole). The 1N5407-E3/54 exhibits lower forward voltage drop (1.2 V versus 1.3 V), which reduces power dissipation. The slightly narrower junction temperature range (-50 to 150 °C versus -55 to 150 °C) must be evaluated against application temperature requirements.

Q: What is the difference between 1N5407-E3/54 and 1N5407-E3/73?

A: These parts are electrically identical. The designations 54 and 73 refer to different tape packaging configurations used during manufacturing and distribution. Both deliver the same electrical performance and are interchangeable from a functional standpoint.

Q: Why does the GP30K-E3/54 have a longer reverse recovery time than the FR306G?

A: The GP30K-E3/54 is classified as a standard recovery diode (5 µs trr) rather than a fast recovery diode (500 ns trr). This difference reflects the design optimization of each part. The GP30K-E3/54 compensates with lower forward voltage drop (1.1 V) and extended temperature range (-65 to 175 °C), making it suitable for applications where thermal performance and efficiency are prioritized over switching speed.

Q: Are all substitute parts RoHS3 and REACH compliant?

A: Yes. The FR306G and all three substitute parts (1N5407-E3/54, 1N5407-E3/73, and GP30K-E3/54) are RoHS3 Compliant and REACH Unaffected, ensuring regulatory compliance across all options.

Q: Can I use the GP30K-E3/54 in high-frequency switching applications?

A: The GP30K-E3/54 is classified as a standard recovery diode with a 5 µs reverse recovery time, compared to the FR306G's 500 ns fast recovery specification. Applications requiring rapid switching transitions should prioritize the FR306G or the 1N5407 variants, which maintain faster recovery characteristics.

Q: What is the impact of forward voltage drop differences on circuit performance?

A: Forward voltage drop directly affects power dissipation and heat generation. The GP30K-E3/54 (1.1 V) dissipates less power than the FR306G (1.3 V) at 3 A operation. In thermal-constrained designs, the lower forward voltage drop of substitute parts may improve efficiency and reduce cooling requirements.

Q: Are the substitute parts available in the same packaging format?

A: Yes. All substitute parts use the DO-201AD axial through-hole package with identical mechanical dimensions and mounting characteristics, ensuring direct physical compatibility in PCB layouts designed for the FR306G.

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