FQB2N80TM Equivalent & Substitute Parts

Part Overview

The FQB2N80TM is an N-Channel MOSFET manufactured by onsemi, rated for 800V drain-to-source voltage with a continuous drain current of 2.4A at 25°C. This device is housed in a Surface Mount TO-263 (D2PAK) package and is part of the QFET® series. The FQB2N80TM is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support, maintenance, and production continuity. Substitute parts must maintain compatibility across electrical ratings, thermal characteristics, and mechanical packaging to ensure reliable circuit operation.

Substiute Parts

FQB2N80TM
onsemiIn Stock: 624FQB2N80TM Datasheet
FQB2N80TM
Current Part
IRF540NSTRLPBF
Infineon TechnologiesIn Stock: 35365IRF540NSTRLPBF Datasheet
IRF540NSTRLPBF
Similar

Key Parameters

Parameter FQB2N80TM
Manufacturer onsemi
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Continuous Drain Current (Id) @ 25°C 2.4A (Tc)
Drive Voltage 10V
Rds On (Max) @ Id, Vgs 6.3Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 25 V
Power Dissipation (Max) 3.13W (Ta), 85W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D2PAK (2 Leads + Tab)
Product Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the FQB2N80TM is determined by strict adherence to the following electrical and mechanical parameters:

Critical Substitution Criteria:

  1. FET Type and Technology: Substitute parts must be N-Channel MOSFETs to maintain circuit functionality and gate drive compatibility.

  2. Drain to Source Voltage (Vdss): The substitute must support a minimum Vdss rating equal to or greater than 800V to ensure safe operation under the same voltage stress conditions.

  3. Continuous Drain Current (Id): The substitute must support a minimum continuous drain current equal to or greater than 2.4A at 25°C to handle the same load conditions.

  4. Drive Voltage Compatibility: The substitute must operate with a 10V gate drive voltage to ensure compatibility with existing gate driver circuits.

  5. Mounting Type and Package: The substitute must use Surface Mount technology in a TO-263 (D2PAK) package to maintain PCB layout compatibility and thermal management characteristics.

  6. Operating Temperature Range: The substitute must support the operating temperature range of -55°C to 150°C (TJ) or wider to ensure reliable operation across all environmental conditions.

  7. Moisture Sensitivity Level (MSL): The substitute should maintain MSL 1 (Unlimited) classification for consistent handling and storage requirements.

The IRF540NSTRLPBF does not meet the critical substitution criteria for the FQB2N80TM. While both devices share N-Channel MOSFET technology, Surface Mount D2PAK packaging, and compatible gate drive voltage, the IRF540NSTRLPBF is rated for only 100V Vdss, which is significantly lower than the 800V requirement of the FQB2N80TM. This voltage rating difference makes the IRF540NSTRLPBF unsuitable for applications requiring 800V blocking capability.

Parameter Comparison

Parameter FQB2N80TM IRF540NSTRLPBF Compatibility
Manufacturer onsemi Infineon Technologies Different
FET Type N-Channel N-Channel Compatible
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) Compatible
Drain to Source Voltage (Vdss) 800 V 100 V Not Compatible
Continuous Drain Current (Id) @ 25°C 2.4A (Tc) 33A (Tc) Substitute Exceeds
Drive Voltage 10V 10V Compatible
Rds On (Max) @ Id, Vgs 6.3Ohm @ 900mA, 10V 44mOhm @ 16A, 10V Different Conditions
Vgs(th) (Max) @ Id 5V @ 250µA 4V @ 250µA Similar
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 71 nC @ 10 V Substitute Higher
Vgs (Max) ±30V ±20V Main Part Higher
Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 25 V 1960 pF @ 25 V Substitute Higher
Power Dissipation (Max) 3.13W (Ta), 85W (Tc) 130W (Tc) Substitute Higher
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) Substitute Wider
Mounting Type Surface Mount Surface Mount Compatible
Package / Case TO-263-3, D2PAK TO-263-3, D2PAK Compatible
Product Status Obsolete Active Substitute Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) Compatible

Engineering Selection Recommendations

The FQB2N80TM is classified as obsolete, requiring evaluation of alternative components for new designs or production continuity. The IRF540NSTRLPBF, while manufactured by Infineon Technologies and currently in active production status, does not qualify as a direct substitute due to a critical voltage rating mismatch.

Voltage Rating Limitation: The IRF540NSTRLPBF is rated for 100V Vdss, whereas the FQB2N80TM is rated for 800V Vdss. This eight-fold difference in blocking voltage capability makes the IRF540NSTRLPBF unsuitable for circuits designed to operate at or near 800V. Substituting a lower-voltage device in a high-voltage application creates unacceptable risk of device failure and circuit malfunction.

Compliance and Certification: Both devices carry REACH Unaffected status and EAR99 ECCN classification, indicating equivalent regulatory compliance. The IRF540NSTRLPBF holds ROHS3 Compliant certification, whereas the FQB2N80TM does not specify RoHS status. Both devices maintain MSL 1 (Unlimited) moisture sensitivity classification.

Product Availability: The IRF540NSTRLPBF is in active production with substantial inventory availability (35,300 pieces), whereas the FQB2N80TM is obsolete with limited remaining stock (608 pieces). For applications requiring 800V capability, alternative high-voltage N-Channel MOSFETs from active product lines must be evaluated based on matching Vdss, Id, and package requirements.

Frequently Asked Questions (FAQ)

Q: Can the IRF540NSTRLPBF replace the FQB2N80TM in my circuit?

A: No. While both devices are N-Channel MOSFETs in D2PAK packages with compatible gate drive voltages, the IRF540NSTRLPBF is rated for 100V Vdss compared to the FQB2N80TM's 800V Vdss. The voltage rating difference is a critical incompatibility that prevents substitution.

Q: What does the 800V Vdss rating mean for the FQB2N80TM?

A: The 800V Vdss (Drain-to-Source Voltage) rating indicates the maximum voltage that can be applied between the drain and source terminals when the device is in the off state. This rating determines the device's suitability for high-voltage applications. The FQB2N80TM is designed for circuits operating at or below 800V.

Q: Why is the IRF540NSTRLPBF listed as a substitute if it cannot replace the FQB2N80TM?

A: The IRF540NSTRLPBF is listed in the input data as a substitute reference. However, based on strict engineering analysis of the provided parameters, the voltage rating mismatch (100V versus 800V) disqualifies it as a functional substitute for the FQB2N80TM.

Q: Are the D2PAK packages of both devices physically identical?

A: Both the FQB2N80TM and IRF540NSTRLPBF use the TO-263-3 D2PAK (2 Leads + Tab) package, which provides physical and mechanical compatibility for PCB mounting. However, physical package compatibility does not ensure electrical compatibility.

Q: What is the significance of the FQB2N80TM being obsolete?

A: Obsolete status indicates that onsemi has discontinued production of the FQB2N80TM. For new designs or production continuity, alternative active N-Channel MOSFETs with matching 800V Vdss ratings and compatible packaging must be identified from current manufacturer product lines.

Q: How do the gate charge specifications differ between these devices?

A: The FQB2N80TM has a gate charge (Qg) of 15 nC at 10V, while the IRF540NSTRLPBF has 71 nC at 10V. Higher gate charge requires more energy from the gate driver circuit to switch the device. This difference reflects the different current and voltage ratings of each device.

Q: What is MSL 1 (Unlimited) moisture sensitivity?

A: MSL 1 (Unlimited) is the lowest moisture sensitivity classification, indicating that the device has no moisture sensitivity restrictions. Both the FQB2N80TM and IRF540NSTRLPBF carry this classification, allowing standard handling and storage without special moisture control measures.

Q: Can I use the IRF540NSTRLPBF in a lower-voltage version of my circuit?

A: The IRF540NSTRLPBF is suitable for circuits operating at 100V or below. If your application requires only 100V blocking capability, the IRF540NSTRLPBF's higher current rating (33A versus 2.4A) and active production status may offer advantages. However, this represents a different circuit design, not a direct substitution of the FQB2N80TM.

Request Quote (Ships tomorrow)