FMMT449TC Equivalent & Substitute Parts

Part Overview

The FMMT449TC is an NPN bipolar junction transistor manufactured by Diodes Incorporated, designed for general-purpose switching and amplification applications. This device features a 30 V collector-emitter breakdown voltage, 1 A maximum collector current, and 500 mW power dissipation in a surface mount SOT-23-3 package. The FMMT449TC is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and production continuity.

Substiute Parts

FMMT449TC
Diodes IncorporatedIn Stock: 1193FMMT449TC Datasheet
FMMT449TC
Current Part
FMMT449TA
Diodes IncorporatedIn Stock: 17650FMMT449TA Datasheet
FMMT449TA
Parametric Equivalent
2SD2657KT146
Rohm SemiconductorIn Stock: 162772SD2657KT146 Datasheet
2SD2657KT146
MFR Recommended
BC848ALT1G
onsemiIn Stock: 42466BC848ALT1G Datasheet
BC848ALT1G
MFR Recommended
BC848B,215
Nexperia USA Inc.In Stock: 2312BC848B,215 Datasheet
BC848B,215
MFR Recommended
BC848B,235
Nexperia USA Inc.In Stock: 9202BC848B,235 Datasheet
BC848B,235
MFR Recommended
BC848BE6327HTSA1
Infineon TechnologiesIn Stock: 936BC848BE6327HTSA1 Datasheet
BC848BE6327HTSA1
MFR Recommended
BC848BLT1G
onsemiIn Stock: 17318BC848BLT1G Datasheet
BC848BLT1G
MFR Recommended
BC848CLT1G
onsemiIn Stock: 6287BC848CLT1G Datasheet
BC848CLT1G
MFR Recommended
BC849B,215
Nexperia USA Inc.In Stock: 8035BC849B,215 Datasheet
BC849B,215
MFR Recommended
BC849BLT1G
onsemiIn Stock: 1185BC849BLT1G Datasheet
BC849BLT1G
MFR Recommended
BC849C,215
Nexperia USA Inc.In Stock: 75800BC849C,215 Datasheet
BC849C,215
MFR Recommended
BC849C-TP
Micro Commercial CoIn Stock: 3855BC849C-TP Datasheet
BC849C-TP
MFR Recommended
BC849CLT1G
onsemiIn Stock: 33116BC849CLT1G Datasheet
BC849CLT1G
MFR Recommended
BCW31,215
NXP USA Inc.In Stock: 42746BCW31,215 Datasheet
BCW31,215
MFR Recommended
BCW32,215
Nexperia USA Inc.In Stock: 3238BCW32,215 Datasheet
BCW32,215
MFR Recommended
BCW33,215
Nexperia USA Inc.In Stock: 2368BCW33,215 Datasheet
BCW33,215
MFR Recommended
BCW33LT1G
onsemiIn Stock: 3419BCW33LT1G Datasheet
BCW33LT1G
MFR Recommended
BCW60B,215
Nexperia USA Inc.In Stock: 2315BCW60B,215 Datasheet
BCW60B,215
MFR Recommended
BCW60C,215
Nexperia USA Inc.In Stock: 4455BCW60C,215 Datasheet
BCW60C,215
MFR Recommended
BCW60D,215
NXP USA Inc.In Stock: 16550BCW60D,215 Datasheet
BCW60D,215
MFR Recommended
BCW65ALT1G
onsemiIn Stock: 1168BCW65ALT1G Datasheet
BCW65ALT1G
MFR Recommended
BCW65CLT1G
onsemiIn Stock: 12358BCW65CLT1G Datasheet
BCW65CLT1G
MFR Recommended
FMMT449-TP
Micro Commercial CoIn Stock: 778FMMT449-TP Datasheet
FMMT449-TP
MFR Recommended
MMBT2222LT1G
onsemiIn Stock: 21700MMBT2222LT1G Datasheet
MMBT2222LT1G
MFR Recommended
MMBT2484LT1G
onsemiIn Stock: 9298MMBT2484LT1G Datasheet
MMBT2484LT1G
MFR Recommended
MMBT2484LT3G
onsemiIn Stock: 30521MMBT2484LT3G Datasheet
MMBT2484LT3G
MFR Recommended
MMBT489LT1G
onsemiIn Stock: 39122MMBT489LT1G Datasheet
MMBT489LT1G
MFR Recommended
MMBT6429LT1G
onsemiIn Stock: 155261MMBT6429LT1G Datasheet
MMBT6429LT1G
MFR Recommended
NSS30101LT1G
onsemiIn Stock: 295086NSS30101LT1G Datasheet
NSS30101LT1G
MFR Recommended
PBSS4130T,215
Nexperia USA Inc.In Stock: 2535PBSS4130T,215 Datasheet
PBSS4130T,215
MFR Recommended
PBSS4230T,215
Nexperia USA Inc.In Stock: 6141PBSS4230T,215 Datasheet
PBSS4230T,215
MFR Recommended
PMBT2222,215
Nexperia USA Inc.In Stock: 3967PMBT2222,215 Datasheet
PMBT2222,215
MFR Recommended
PMMT491A,215
Nexperia USA Inc.In Stock: 62185PMMT491A,215 Datasheet
PMMT491A,215
MFR Recommended
PMMT491A,235
Nexperia USA Inc.In Stock: 42529PMMT491A,235 Datasheet
PMMT491A,235
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type NPN
Collector Current (Max) 1 A
Collector-Emitter Breakdown Voltage (Max) 30 V
Power Dissipation (Max) 500 mW
Transition Frequency 150 MHz
DC Current Gain (hFE Min) 100 @ 500 mA, 2 V
Operating Temperature Range −55 to +150 °C
Package SOT-23-3
Mounting Type Surface Mount

Substitute Part Grouping Explanation

Substitution of the FMMT449TC is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Transistor type: NPN
  • Collector-emitter breakdown voltage: 30 V (minimum)
  • Collector current rating: ≥1 A
  • Power dissipation: ≥500 mW
  • Package: SOT-23-3 (TO-236-3, SC-59)
  • Mounting type: Surface Mount
  • Operating temperature range: −55°C to +150°C (minimum)

Parametric Equivalent Classification: Parts meeting all primary criteria with identical electrical performance specifications are classified as parametric equivalents. The FMMT449TA from Diodes Incorporated is a parametric equivalent, differing only in packaging format (Tape & Reel versus cut tape) and product status (Active versus Obsolete).

Manufacturer Recommended Substitutes: Parts exceeding the primary criteria in specific parameters (higher current rating, higher power dissipation, higher transition frequency, or higher DC current gain) are classified as manufacturer recommended substitutes. These parts are electrically compatible and functionally superior in their respective parameter categories.

Current-Limited Substitutes: Parts with reduced maximum collector current (100 mA versus 1 A) are listed for applications where the full 1 A rating is not required. These substitutes maintain voltage and package compatibility but operate within reduced current envelopes.

Parameter Comparison

Part Number Manufacturer Ic (Max) VCEO (Max) Power (Max) fT hFE (Min) Temp Range Status Package
FMMT449TC Diodes Inc. 1 A 30 V 500 mW 150 MHz 100 −55 to +150°C Obsolete SOT-23-3
FMMT449TA Diodes Inc. 1 A 30 V 500 mW 150 MHz 100 −55 to +150°C Active SOT-23-3
2SD2657KT146 Rohm Semi. 1.5 A 30 V 200 mW 330 MHz 270 −55 to +150°C Active SOT-23-3
BC848ALT1G onsemi 100 mA 30 V 300 mW 100 MHz 110 −55 to +150°C Active SOT-23-3
BC848B,215 Nexperia 100 mA 30 V 250 mW 100 MHz 200 −55 to +150°C Active SOT-23-3
BC848B,235 Nexperia 100 mA 30 V 250 mW 100 MHz 200 −55 to +150°C Active SOT-23-3
BC848BE6327HTSA1 Infineon 100 mA 30 V 330 mW 250 MHz 200 −55 to +150°C Last Time Buy SOT-23-3
BC848BLT1G onsemi 100 mA 30 V 300 mW 100 MHz 200 −55 to +150°C Active SOT-23-3
BC848CLT1G onsemi 100 mA 30 V 300 mW 100 MHz 420 −55 to +150°C Active SOT-23-3
BC849B,215 Nexperia 100 mA 30 V 250 mW 100 MHz 200 −55 to +150°C Active SOT-23-3
BC849BLT1G onsemi 100 mA 30 V 300 mW 100 MHz 200 −55 to +150°C Active SOT-23-3

Engineering Selection Recommendations

Parametric Equivalent (Direct Replacement): The FMMT449TA is the direct parametric equivalent to the FMMT449TC. Both devices share identical electrical specifications and package format. The FMMT449TA is currently in active production status, making it the primary recommendation for applications requiring exact performance matching. The only distinction is packaging format (Tape & Reel for FMMT449TA versus cut tape for FMMT449TC).

Higher Current Rating Substitute: The 2SD2657KT146 from Rohm Semiconductor is suitable for applications where the 1 A collector current rating of the FMMT449TC is insufficient. This device provides 1.5 A maximum collector current while maintaining the 30 V breakdown voltage specification. The 2SD2657KT146 exhibits higher transition frequency (330 MHz) and higher DC current gain (270 minimum), making it appropriate for higher-speed switching applications. Power dissipation is reduced to 200 mW, which may be a limiting factor in high-power applications.

Current-Limited Substitutes (100 mA Devices): The BC848 and BC849 series devices from onsemi and Nexperia are suitable for applications where collector current does not exceed 100 mA. These devices maintain the 30 V breakdown voltage and SOT-23-3 package compatibility. Multiple variants exist within this series, differentiated by DC current gain specifications and product status. All listed BC848 and BC849 variants are in active production status.

Automotive-Qualified Alternatives: The BC848B,215 and BC849B,215 variants from Nexperia carry AEC-Q101 automotive qualification. These parts are suitable for automotive and industrial applications requiring formal qualification documentation.

Last Time Buy Consideration: The BC848BE6327HTSA1 from Infineon is classified as Last Time Buy status. While currently available, this device should not be selected for new designs requiring long-term supply continuity.

Frequently Asked Questions (FAQ)

Q: Can the FMMT449TA be used as a direct replacement for the FMMT449TC?

A: Yes. The FMMT449TA is a parametric equivalent with identical electrical specifications. The only difference is packaging format (Tape & Reel versus cut tape). Both devices are NPN transistors rated for 1 A collector current, 30 V breakdown voltage, and 500 mW power dissipation in SOT-23-3 packages.

Q: What is the primary limitation when substituting BC848 or BC849 series devices for the FMMT449TC?

A: The BC848 and BC849 series devices are rated for maximum collector current of 100 mA, compared to 1 A for the FMMT449TC. These substitutes are suitable only for applications where collector current does not exceed 100 mA. All other electrical parameters (voltage, package, temperature range) remain compatible.

Q: Is the 2SD2657KT146 a suitable substitute for high-current applications?

A: The 2SD2657KT146 provides 1.5 A maximum collector current, exceeding the FMMT449TC specification of 1 A. However, power dissipation is reduced to 200 mW compared to 500 mW for the FMMT449TC. Applications requiring sustained high-current operation at elevated power levels should evaluate thermal management requirements carefully.

Q: Are all substitute parts available in the same SOT-23-3 package?

A: Yes. All listed substitute parts are housed in SOT-23-3 (TO-236-3, SC-59) surface mount packages, ensuring mechanical and footprint compatibility with the FMMT449TC.

Q: What is the significance of product status (Active, Obsolete, Last Time Buy)?

A: Product status indicates supply continuity and manufacturer support. Active status indicates ongoing production and long-term availability. Obsolete status indicates end-of-life with no further production. Last Time Buy status indicates final production run with limited availability. For new designs, selection of Active status components is recommended.

Q: Can BC848 and BC849 devices be used interchangeably?

A: BC848 and BC849 devices share identical electrical specifications and package format. The primary distinction is DC current gain specification. BC848 variants specify minimum hFE of 110 to 420 depending on grade, while BC849 variants specify minimum hFE of 200. Both are suitable for general-purpose switching applications where the specified gain meets circuit requirements.

Q: What is the operating temperature range for all listed substitutes?

A: All listed substitute parts operate across the temperature range of −55°C to +150°C (junction temperature), matching the FMMT449TC specification. This ensures thermal compatibility across industrial and extended temperature applications.

Q: Are there differences in saturation voltage between the FMMT449TC and substitute parts?

A: Yes. The FMMT449TC specifies Vce saturation of 1 V at 200 mA, 2 A. The BC848 and BC849 series specify Vce saturation of 600 mV at 5 mA, 100 mA. The 2SD2657KT146 specifies Vce saturation of 350 mV at 50 mA, 1 A. Applications sensitive to saturation voltage should evaluate these differences against circuit requirements.

Q: Which substitute part offers the highest transition frequency?

A: The 2SD2657KT146 provides transition frequency of 330 MHz, compared to 150 MHz for the FMMT449TC. The BC848BE6327HTSA1 provides 250 MHz. Higher transition frequency enables faster switching operation in high-frequency applications.

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