FDS6982 Equivalent & Substitute Parts

Part Overview

The FDS6982 is a dual N-channel MOSFET array manufactured by onsemi, housed in an 8-SOIC surface mount package. This device features a 30V drain-to-source voltage rating with continuous drain current capabilities of 6.3A and 8.6A, and is designed for logic-level gate drive applications. The FDS6982 is classified as obsolete, necessitating identification of equivalent substitute components for new designs and ongoing production support. Equivalent parts must maintain functional compatibility across voltage, current, and thermal specifications while accommodating the same package footprint.

Substiute Parts

FDS6982
onsemiIn Stock: 80400FDS6982 Datasheet
FDS6982
Current Part
NTMD6N02R2G
onsemiIn Stock: 15336NTMD6N02R2G Datasheet
NTMD6N02R2G
Similar
STS8DNF3LL
STMicroelectronicsIn Stock: 15422STS8DNF3LL Datasheet
STS8DNF3LL
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Key Parameters

Parameter FDS6982 Unit
Drain-to-Source Voltage (Vdss) 30V V
Continuous Drain Current (Id) @ 25°C 6.3A, 8.6A A
On-Resistance (Rds On) @ Id, Vgs 28mOhm @ 6.3A, 10V mOhm
Gate Threshold Voltage (Vgs(th)) @ Id 3V @ 250µA V
Gate Charge (Qg) @ Vgs 12nC @ 5V nC
Input Capacitance (Ciss) @ Vds 760pF @ 10V pF
Maximum Power Dissipation 900mW mW
Operating Temperature Range -55°C to 150°C °C
Configuration 2 N-Channel (Dual)
Package Type 8-SOIC
FET Feature Logic Level Gate
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the FDS6982 is determined by the following critical parameters:

Voltage Rating Compatibility: The drain-to-source voltage (Vdss) must equal or exceed 30V to maintain safe operation within the original circuit design envelope.

Current Handling Capability: The continuous drain current (Id) must support the 6.3A to 8.6A range specified for the FDS6982. Substitute parts with lower current ratings are not suitable for direct replacement.

On-Resistance (Rds On): The maximum on-resistance directly impacts power dissipation and thermal performance. Lower on-resistance values indicate superior performance characteristics.

Package Footprint: All substitute parts must use the 8-SOIC (0.154", 3.90mm width) surface mount package to ensure mechanical and electrical compatibility with existing PCB layouts.

Configuration: Substitute parts must maintain the dual N-channel (2 N-Channel) configuration to preserve circuit functionality.

Logic Level Gate Drive: The FET feature specification requires logic-level gate drive capability for compatibility with standard digital control signals.

Two substitute parts meet these criteria with varying degrees of parameter alignment:

STS8DNF3LL (STMicroelectronics): Matches the 30V Vdss rating and exceeds the current requirement at 8A. Offers superior on-resistance (20mOhm) and higher power dissipation capability (1.6W). Product status is "Not For New Designs."

NTMD6N02R2G (onsemi): Operates at a reduced 20V Vdss rating, which is below the FDS6982 specification. Current rating of 3.92A falls below the minimum FDS6982 requirement. This part is not suitable as a direct substitute due to voltage and current limitations. Product status is Active.

Parameter Comparison

Parameter FDS6982 STS8DNF3LL NTMD6N02R2G Unit
Manufacturer onsemi STMicroelectronics onsemi
Drain-to-Source Voltage (Vdss) 30V 30V 20V V
Continuous Drain Current (Id) @ 25°C 6.3A, 8.6A 8A 3.92A A
On-Resistance (Rds On) 28mOhm @ 6.3A, 10V 20mOhm @ 4A, 10V 35mOhm @ 6A, 4.5V mOhm
Gate Threshold Voltage (Vgs(th)) @ Id 3V @ 250µA 1V @ 250µA 1.2V @ 250µA V
Gate Charge (Qg) @ Vgs 12nC @ 5V 17nC @ 5V 20nC @ 4.5V nC
Input Capacitance (Ciss) @ Vds 760pF @ 10V 800pF @ 25V 1100pF @ 16V pF
Maximum Power Dissipation 900mW 1.6W 730mW mW
Operating Temperature Range -55°C to 150°C —55°C to 150°C -55°C to 150°C °C
Configuration 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
Package Type 8-SOIC 8-SOIC 8-SOIC
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate
Product Status Obsolete Not For New Designs Active
RoHS Status ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

STS8DNF3LL is the only viable substitute for the FDS6982 based on electrical parameter compatibility. This part maintains the 30V Vdss rating and exceeds the continuous drain current requirement at 8A. The superior on-resistance specification (20mOhm) and increased power dissipation capability (1.6W) provide enhanced thermal performance compared to the original device. The STS8DNF3LL is classified as "Not For New Designs" by STMicroelectronics, indicating it remains available for legacy system support and replacement applications. The part is ROHS3 compliant and maintains the identical 8-SOIC package footprint.

NTMD6N02R2G does not qualify as a substitute for the FDS6982. The 20V Vdss rating is insufficient for circuits designed around the 30V specification, and the 3.92A continuous drain current falls below the minimum 6.3A requirement. Although this part is Active and ROHS3 compliant, the electrical parameter limitations preclude its use as a direct replacement.

For applications requiring an active-status alternative, circuit redesign or evaluation of higher-voltage rated components from the substitute list of STS8DNF3LL may be necessary.

Frequently Asked Questions (FAQ)

Q: Can the NTMD6N02R2G replace the FDS6982 in existing designs?

A: No. The NTMD6N02R2G operates at 20V Vdss, which is below the FDS6982 specification of 30V. Additionally, the continuous drain current rating of 3.92A is insufficient for applications requiring 6.3A to 8.6A. Direct substitution would result in voltage overstress and current limitation failures.

Q: Is the STS8DNF3LL suitable for new production designs?

A: The STS8DNF3LL is classified as "Not For New Designs" by STMicroelectronics. This designation indicates the part is available for legacy system support and replacement applications but is not recommended for new product development. For new designs, alternative active-status components with equivalent electrical specifications should be evaluated.

Q: What is the primary reason the FDS6982 requires substitution?

A: The FDS6982 is classified as obsolete, meaning it is no longer manufactured or supported by onsemi. Obsolete components must be replaced to ensure long-term supply chain continuity and production sustainability.

Q: Are the package dimensions identical between the FDS6982 and STS8DNF3LL?

A: Yes. Both devices use the 8-SOIC (0.154", 3.90mm width) surface mount package. The mechanical footprint is identical, allowing direct PCB layout compatibility without redesign.

Q: How does the on-resistance of the STS8DNF3LL compare to the FDS6982?

A: The STS8DNF3LL exhibits lower on-resistance at 20mOhm (measured at 4A, 10V Vgs) compared to the FDS6982 at 28mOhm (measured at 6.3A, 10V Vgs). Lower on-resistance reduces power dissipation and improves thermal performance in switching applications.

Q: What compliance certifications apply to the STS8DNF3LL?

A: The STS8DNF3LL is ROHS3 compliant and carries REACH Unaffected status. These certifications confirm environmental and regulatory compliance for use in regulated markets.

Q: Can both channels within the FDS6982 be independently controlled?

A: The FDS6982 is a dual N-channel MOSFET array in a single 8-SOIC package. Each channel operates independently with separate gate, drain, and source connections. The STS8DNF3LL maintains this dual-channel configuration, preserving independent control capability.

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