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FDS6679Z Equivalent & Substitute Parts
Part Overview
The FDS6679Z is a P-Channel 30V 13A power MOSFET manufactured by onsemi in the PowerTrench® series, housed in an 8-SOIC surface mount package. This device is classified as Obsolete, indicating it has reached end-of-life status and is no longer recommended for new designs. The obsolete classification necessitates identification of equivalent and substitute components to support ongoing production requirements, maintenance applications, and legacy system support.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | P-Channel | — |
| Drain to Source Voltage (Vdss) | 30 | V |
| Current - Continuous Drain (Id) @ 25°C | 13 | A (Ta) |
| Rds On (Max) @ Id, Vgs | 9 | mOhm @ 13A, 10V |
| Power Dissipation (Max) | 2.5 | W (Ta) |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Package Type | 8-SOIC | Surface Mount |
| Vgs(th) (Max) @ Id | 3 | V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 94 | nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3803 | pF @ 15V |
Substitute Part Grouping Explanation
Substitution eligibility for the FDS6679Z is determined by strict alignment with the following electrical and mechanical parameters:
Primary Substitution Criteria:
- FET Type: P-Channel (required match)
- Drain to Source Voltage (Vdss): 30V (required match)
- Package Type: 8-SOIC surface mount (required match)
- Continuous Drain Current (Id): 13A minimum at 25°C
- Rds On (Max): 9 mOhm or lower @ 13A, 10V
- Power Dissipation: 2.5W or greater
- Operating Temperature Range: Must encompass -55°C to 175°C or be compatible with application requirements
Identified Substitutes:
FDS6679AZ (onsemi): Meets all primary criteria with identical electrical specifications and same package. Active product status. Minor variations in gate charge (96 nC vs. 94 nC) and input capacitance (3845 pF vs. 3803 pF) are within acceptable tolerance. Operating temperature range reduced to -55°C to 150°C.
AO4407A (Alpha & Omega Semiconductor Inc.): Meets core substitution criteria with 30V Vdss and 8-SOIC package. Continuous drain current of 12A is within acceptable range for applications rated at 13A. Rds On of 11 mOhm is slightly higher than FDS6679Z. Power dissipation of 3.1W exceeds minimum requirement. Product status is Not For New Designs.
Parameter Comparison
| Parameter | FDS6679Z (Main) | FDS6679AZ (Substitute) | AO4407A (Substitute) |
|---|---|---|---|
| Manufacturer | onsemi | onsemi | Alpha & Omega Semiconductor Inc. |
| Product Status | Obsolete | Active | Not For New Designs |
| FET Type | P-Channel | P-Channel | P-Channel |
| Vdss | 30V | 30V | 30V |
| Id @ 25°C | 13A (Ta) | 13A (Ta) | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 13A, 10V | 9.3 mOhm @ 13A, 10V | 11 mOhm @ 12A, 20V |
| Vgs(th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 10V | 96 nC @ 10V | 39 nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3803 pF @ 15V | 3845 pF @ 15V | 2600 pF @ 15V |
| Power Dissipation (Max) | 2.5W (Ta) | 2.5W (Ta) | 3.1W (Ta) |
| Operating Temperature Range | -55°C to 175°C (TJ) | -55°C to 150°C (TJ) | -55°C to 150°C (TJ) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
| RoHS Status | Not specified | ROHS3 Compliant | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Unaffected |
Engineering Selection Recommendations
FDS6679AZ is the primary substitute for FDS6679Z applications. Both devices are manufactured by onsemi within the PowerTrench® series and share identical electrical specifications. The FDS6679AZ holds Active product status, ensuring continued availability and manufacturing support. The device is ROHS3 compliant and carries REACH Unaffected certification. The operating temperature range of -55°C to 150°C is suitable for most applications; however, designs requiring operation above 150°C (TJ) must evaluate thermal management or select alternative components. Packaging and moisture sensitivity are identical, enabling direct board-level substitution.
AO4407A serves as a secondary substitute for applications where the reduced continuous drain current of 12A is acceptable. This device is manufactured by Alpha & Omega Semiconductor Inc. and carries Not For New Designs status, limiting its use to legacy system support and maintenance applications. The AO4407A exhibits higher on-resistance (11 mOhm vs. 9 mOhm) and lower gate charge (39 nC vs. 94 nC), resulting in different switching characteristics and thermal behavior. The increased power dissipation rating of 3.1W provides additional thermal margin. ROHS3 compliance and REACH Unaffected status are maintained. Applications selecting AO4407A must account for the 1A reduction in continuous drain current and verify thermal performance under worst-case operating conditions.
Frequently Asked Questions (FAQ)
Q: Can FDS6679AZ be used as a direct replacement for FDS6679Z?
A: Yes. FDS6679AZ is a direct substitute for FDS6679Z. Both devices share identical electrical specifications, package type (8-SOIC), and thermal characteristics. FDS6679AZ is the recommended replacement due to its Active product status and continued manufacturing availability.
Q: What is the primary difference between FDS6679Z and FDS6679AZ?
A: The primary difference is product status. FDS6679Z is Obsolete, while FDS6679AZ is Active. Electrical specifications are nearly identical, with minor variations in gate charge (96 nC vs. 94 nC) and input capacitance (3845 pF vs. 3803 pF) that fall within normal manufacturing tolerance. FDS6679AZ has a reduced maximum operating temperature of 150°C (TJ) compared to 175°C (TJ) for FDS6679Z.
Q: Is AO4407A suitable for all FDS6679Z applications?
A: AO4407A is suitable for applications where the 12A continuous drain current meets design requirements. The device exhibits higher on-resistance (11 mOhm vs. 9 mOhm) and significantly lower gate charge (39 nC vs. 94 nC), resulting in different switching performance and thermal behavior. Applications must verify compatibility with these electrical differences and confirm thermal performance under operating conditions.
Q: What are the package compatibility requirements?
A: All three devices (FDS6679Z, FDS6679AZ, and AO4407A) use the 8-SOIC surface mount package with identical dimensions (0.154" width, 3.90mm). Board-level footprints are compatible across all three devices. Moisture sensitivity level is 1 (Unlimited) for all devices, requiring no special handling precautions.
Q: Are there temperature range limitations when substituting FDS6679AZ for FDS6679Z?
A: FDS6679AZ has a maximum operating temperature of 150°C (TJ) compared to 175°C (TJ) for FDS6679Z. Applications requiring operation above 150°C (TJ) must implement additional thermal management or select alternative components. For applications operating within -55°C to 150°C (TJ), FDS6679AZ is fully compatible.
Q: What compliance certifications apply to these devices?
A: FDS6679AZ and AO4407A are both ROHS3 compliant and carry REACH Unaffected status. All three devices have ECCN classification EAR99 and HTSUS code 8541.29.0095. Moisture sensitivity level is 1 (Unlimited) for all devices.
Q: How do the on-resistance specifications compare?
A: FDS6679Z and FDS6679AZ both specify 9 mOhm and 9.3 mOhm respectively at 13A and 10V gate-source voltage. AO4407A specifies 11 mOhm at 12A and 20V gate-source voltage. The higher on-resistance of AO4407A results in increased power dissipation and heat generation under identical current conditions.
Q: What is the significance of gate charge differences?
A: FDS6679Z and FDS6679AZ have gate charge specifications of 94 nC and 96 nC respectively at 10V, while AO4407A specifies 39 nC at 10V. Lower gate charge enables faster switching transitions and reduced driver power requirements. The significantly lower gate charge of AO4407A may require driver circuit evaluation to ensure compatibility with existing gate drive implementations.
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