FDS5680 N-Channel MOSFET 60V 8A Equivalent & Substitute Parts

Part Overview

The FDS5680 is an N-Channel enhancement-mode MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with 8A continuous drain current at 25°C. The device is housed in an 8-SOIC surface mount package and is part of the PowerTrench® series. The FDS5680 is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and production continuity. Substitute parts must maintain compatibility across voltage ratings, current handling, thermal characteristics, and package form factors while meeting RoHS3 compliance and MSL requirements.

Key Parameters

Parameter	FDS5680 Specification
Drain-to-Source Voltage (Vdss)	60 V
Continuous Drain Current (Id) @ 25°C	8 A (Ta)
On-State Resistance (Rds On) @ Id, Vgs	20 mOhm @ 8A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id	4 V @ 250 µA
Gate Charge (Qg) @ Vgs	42 nC @ 10 V
Input Capacitance (Ciss) @ Vds	1850 pF @ 15 V
Maximum Gate Voltage (Vgs)	±20 V
Power Dissipation (Max)	2.5 W (Ta)
Operating Temperature Range	-55°C to 150°C (TJ)
Package Type	8-SOIC (0.154", 3.90 mm Width)
Mounting Type	Surface Mount
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the FDS5680 are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Mandatory Matching Criteria:

Drain-to-Source Voltage (Vdss): 60 V (exact match required)
Package Type: 8-SOIC or equivalent 8-pin surface mount package (0.154", 3.90 mm width)
Mounting Type: Surface Mount
Operating Temperature Range: Minimum -55°C to 150°C (TJ)
RoHS3 Compliance and MSL Level 1 or better

Performance Compatibility Criteria:

Continuous Drain Current (Id): Equal to or greater than 8 A
On-State Resistance (Rds On): Equal to or lower than 20 mOhm (lower values indicate improved performance)
Gate Threshold Voltage (Vgs(th)): Within ±20 V maximum gate voltage specification
Power Dissipation: Equal to or greater than 2.5 W (Ta)

Substitute parts meeting these criteria maintain functional equivalence and can be used in applications designed for the FDS5680 without circuit redesign, provided thermal and current distribution remain within system specifications.

Parameter Comparison

Parameter	FDS5680	FDS5672	DMT6016LSS-13	PJL9436A_R2_00001	STS7NF60L	TSM4436CS RLG
Manufacturer	onsemi	onsemi	Diodes Incorporated	Panjit International Inc.	STMicroelectronics	Taiwan Semiconductor Corporation
Vdss (V)	60	60	60	60	60	60
Id @ 25°C (A)	8 (Ta)	12 (Tc)	9.2 (Ta)	7.5 (Ta)	7.5 (Tc)	8 (Ta)
Rds On (mOhm)	20 @ 8A, 10V	10 @ 12A, 10V	18 @ 10A, 10V	21 @ 7.5A, 10V	19.5 @ 3.5A, 10V	36 @ 4.6A, 10V
Vgs(th) (V)	4 @ 250 µA	4 @ 250 µA	2.5 @ 250 µA	2.5 @ 250 µA	1 @ 250 µA	3 @ 250 µA
Qg (nC)	42 @ 10V	45 @ 10V	17 @ 10V	28 @ 10V	34 @ 4.5V	10.5 @ 4.5V
Ciss (pF)	1850 @ 15V	2200 @ 25V	864 @ 30V	1680 @ 20V	1700 @ 25V	1100 @ 30V
Vgs Max (V)	±20	±20	±20	±20	±16	±20
Power Dissipation (W)	2.5 (Ta)	2.5 (Ta)	1.5 (Ta)	2.5 (Ta)	2.5 (Tc)	2.5 (Ta)
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	to 150	-55 to 150
Package	8-SOIC	8-SOIC	8-SO	8-SOP	8-SOIC	8-SOP
Product Status	Obsolete	Active	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	3 (168 Hours)

Engineering Selection Recommendations

Primary Substitute: FDS5672 (onsemi)

The FDS5672 is the preferred substitute for the FDS5680. Both devices are manufactured by onsemi within the PowerTrench® series, share identical 60V Vdss rating, and are housed in the same 8-SOIC package. The FDS5672 offers superior performance with 12A continuous drain current (versus 8A) and improved on-state resistance of 10 mOhm (versus 20 mOhm). The FDS5672 maintains active product status, ROHS3 compliance, and MSL Level 1 rating. Gate threshold voltage and maximum gate voltage specifications are identical. This substitute provides direct functional replacement with enhanced current handling capability.

Secondary Substitute: DMT6016LSS-13 (Diodes Incorporated)

The DMT6016LSS-13 meets all mandatory substitution criteria with 60V Vdss, 9.2A continuous drain current, and 8-SO package compatible with 8-SOIC footprints. The device demonstrates lower gate charge (17 nC) and reduced input capacitance (864 pF), which may improve switching performance in certain applications. However, power dissipation is limited to 1.5W (Ta), which is lower than the FDS5680 specification. This substitute is suitable for applications where thermal constraints are less demanding.

Tertiary Substitute: STS7NF60L (STMicroelectronics)

The STS7NF60L is a STripFET™ II series device with 60V Vdss and 7.5A continuous drain current. The device is housed in an 8-SOIC package and maintains ROHS3 compliance. The STS7NF60L exhibits lower gate threshold voltage (1V) and reduced gate charge (34 nC @ 4.5V), which may reduce gate drive requirements. However, the maximum gate voltage specification is ±16V (versus ±20V for FDS5680), which may limit compatibility in certain gate drive circuits. Operating temperature range specification does not explicitly state the lower limit.

Alternative Substitute: PJL9436A_R2_00001 (Panjit International Inc.)

The PJL9436A_R2_00001 provides 60V Vdss with 7.5A continuous drain current in an 8-SOP package. The device maintains ROHS3 compliance and MSL Level 1 rating. On-state resistance is 21 mOhm, which is marginally higher than the FDS5680. This substitute is suitable for applications where the slightly lower current rating and marginally higher on-state resistance are acceptable.

Alternative Substitute: TSM4436CS RLG (Taiwan Semiconductor Corporation)

The TSM4436CS RLG matches the FDS5680 with 60V Vdss and 8A continuous drain current in an 8-SOP package. However, this device exhibits significantly higher on-state resistance (36 mOhm @ 4.6A, 10V) compared to the FDS5680 (20 mOhm @ 8A, 10V). Additionally, the MSL rating is Level 3 (168 Hours), which is more restrictive than the FDS5680 Level 1 rating. This substitute is suitable only when MSL Level 3 handling procedures are acceptable and thermal dissipation is not a primary concern.

Compliance and Availability:

All substitute parts maintain ROHS3 compliance and REACH unaffected status. All devices are classified as active products with current inventory availability, ensuring long-term supply chain continuity. The FDS5680 obsolete status necessitates transition to one of these active alternatives for new designs and production support.

Frequently Asked Questions (FAQ)

Q: Can the FDS5672 be used as a direct replacement for the FDS5680 without circuit modification?

A: Yes. The FDS5672 maintains identical voltage ratings (60V Vdss), gate voltage specifications (±20V), operating temperature range (-55°C to 150°C), and package form factor (8-SOIC). The FDS5672 provides enhanced performance with higher current rating (12A versus 8A) and lower on-state resistance (10 mOhm versus 20 mOhm). No circuit redesign is required.

Q: What is the significance of the on-state resistance (Rds On) difference between the FDS5680 and substitute parts?

A: On-state resistance directly affects power dissipation and thermal performance. Lower Rds On values reduce conduction losses. The FDS5680 specifies 20 mOhm at 8A and 10V gate voltage. Substitute parts with lower Rds On values (such as FDS5672 at 10 mOhm) reduce power dissipation and improve efficiency. Substitute parts with higher Rds On values (such as TSM4436CS RLG at 36 mOhm) increase power dissipation and may require enhanced thermal management.

Q: Are the 8-SOIC, 8-SO, and 8-SOP packages mechanically compatible?

A: The 8-SOIC, 8-SO, and 8-SOP packages share the same 0.154" (3.90 mm) width specification and are mechanically compatible on standard PCB footprints. However, pin pitch and body length may vary slightly between manufacturers. Verification of specific package dimensions against PCB layout is recommended before production implementation.

Q: What does MSL Level 1 versus MSL Level 3 mean for component handling?

A: MSL (Moisture Sensitivity Level) indicates the maximum time a component can be exposed to ambient conditions before soldering. MSL Level 1 (Unlimited) allows indefinite storage without moisture baking. MSL Level 3 (168 Hours) requires moisture baking if the component is exposed to ambient conditions for more than 168 hours. The FDS5680 and most substitute parts are MSL Level 1. The TSM4436CS RLG is MSL Level 3, requiring more stringent handling procedures.

Q: How does gate threshold voltage (Vgs(th)) affect circuit design?

A: Gate threshold voltage determines the minimum gate voltage required to turn the MOSFET on. The FDS5680 specifies 4V at 250 µA. Substitute parts range from 1V (STS7NF60L) to 4V (FDS5672). Lower threshold voltages allow operation with lower gate drive voltages, while higher threshold voltages require higher gate drive voltages. Gate drive circuit design must accommodate the specific Vgs(th) of the selected device.

Q: What is the impact of gate charge (Qg) on switching performance?

A: Gate charge represents the total charge required to switch the MOSFET from off to on state. Higher gate charge requires longer switching times and higher gate drive current. The FDS5680 specifies 42 nC at 10V. Substitute parts range from 10.5 nC (TSM4436CS RLG) to 45 nC (FDS5672). Lower gate charge values enable faster switching and reduced gate drive power consumption.

Q: Is the FDS5672 always the best substitute choice?

A: The FDS5672 is the preferred substitute for most applications due to identical manufacturer, series, package, and voltage specifications combined with superior performance metrics. However, application-specific requirements may favor alternative substitutes. For example, applications requiring minimal gate charge may benefit from TSM4436CS RLG or DMT6016LSS-13. Applications with strict thermal constraints may require the lower power dissipation of DMT6016LSS-13 (1.5W).

Q: Can substitute parts be mixed in the same production batch?

A: Mixing substitute parts within a single production batch is not recommended. Each substitute part exhibits different electrical characteristics (Rds On, Qg, Ciss, Vgs(th)) that may affect circuit performance and thermal behavior. Consistent device selection ensures uniform performance across production units. If substitution becomes necessary, all units in a batch should be updated to the same substitute part.

Q: What compliance certifications are maintained across all substitute parts?

A: All substitute parts maintain ROHS3 compliance and REACH unaffected status, matching the FDS5680 specifications. All devices are classified under ECCN EAR99 and HTSUS 8541.29.0095. These certifications ensure regulatory compliance for commercial and industrial applications across global markets.

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