FDP55N06 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDP55N06 is an N-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with 55A continuous drain current in a TO-220-3 through-hole package. This device is part of the UniFET™ series and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active product lines are necessary for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, on-resistance, and thermal characteristics while accommodating the through-hole TO-220-3 package format.

Key Parameters

Parameter	FDP55N06 Value	Unit
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	55	A (Tc)
On-Resistance (Rds On) @ 27.5A, 10V	22	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	37	nC
Power Dissipation (Max)	114	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-220-3	Through Hole
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the FDP55N06 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 60V
Continuous Drain Current (Id): Must equal or exceed 55A at 25°C
Package Type: Must be TO-220-3 through-hole configuration
FET Type: Must be N-Channel MOSFET
Technology: Must be Metal Oxide MOSFET

Secondary Compatibility Parameters:

On-Resistance (Rds On): Lower values indicate improved performance; values at or below 22mOhm are preferred
Gate Threshold Voltage (Vgs(th)): Must be compatible with 10V drive voltage
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation: Must accommodate thermal requirements of the application
Operating Temperature Range: Extended ranges provide design flexibility

Substitute parts are grouped into two categories: Manufacturer-Recommended Substitutes (active product status, direct replacement capability) and Similar Electrical Characteristics (alternative sources meeting core electrical parameters).

Parameter Comparison

Parameter	FDP55N06	FQP50N06L-EPKE0003	IRFZ44VPBF	STP55NF06L	STP60NF06	IRFB3806PBF
Manufacturer	onsemi	onsemi	Infineon	STMicroelectronics	STMicroelectronics	Infineon
Vdss (V)	60	60	60	60	60	60
Id @ 25°C (A)	55	52.4	55	55	60	43
Rds On @ 10V (mOhm)	22	21	16.5	18	16	15.8
Vgs(th) @ 250µA (V)	4	2.5	4	1.7	4	4
Qg @ 10V (nC)	37	32	67	37	73	30
Power Dissipation (W)	114	121	115	95	110	71
Operating Temp Range (°C)	-55 to 150	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-220-3	TO-220-3	TO-220AB	TO-220	TO-220	TO-220AB
Product Status	Obsolete	Active	Not For New Designs	Active	Active	Active
RoHS Compliance	ROHS3	Not specified	ROHS3	ROHS3	ROHS3	ROHS3

Engineering Selection Recommendations

Recommended Primary Substitute: FQP50N06L-EPKE0003

The FQP50N06L-EPKE0003 is the manufacturer-recommended substitute from onsemi. It maintains the same 60V voltage rating and TO-220-3 package configuration as the FDP55N06. With 52.4A continuous drain current, it provides adequate current capacity for most applications requiring the original part. The device is in active production status, ensuring long-term availability and supply chain stability. It features improved on-resistance (21mOhm) and lower gate charge (32nC), resulting in reduced power dissipation and improved switching efficiency. Extended operating temperature range (-55°C to 175°C) provides additional design margin compared to the original part's -55°C to 150°C range. This part is recommended for new designs and production transitions from the obsolete FDP55N06.

Alternative Substitutes for Specific Applications:

STP55NF06L (STMicroelectronics) maintains exact current rating (55A) and voltage (60V) specifications with TO-220-3 package compatibility. Active product status and ROHS3 compliance ensure availability. Lower power dissipation (95W) and improved on-resistance (18mOhm) support thermal-constrained applications. Gate threshold voltage of 1.7V enables lower-voltage drive circuits.

STP60NF06 (STMicroelectronics) provides increased current capacity (60A) at the same 60V rating. Active production status and extensive inventory (35,300 pcs) ensure supply availability. Suitable for applications requiring higher current margins or where thermal management permits increased power dissipation.

IRFZ44VPBF (Infineon) matches the FDP55N06 electrical specifications (60V, 55A) with superior on-resistance (16.5mOhm) and lower gate charge (67nC at 10V). However, product status is "Not For New Designs," limiting its use to legacy system maintenance or where existing design validation exists.

IRFB3806PBF (Infineon) provides 43A continuous current at 60V with the lowest on-resistance (15.8mOhm) among active alternatives. Suitable for applications where current requirements are lower but efficiency is critical. Active product status supports new designs.

Compliance and Certification:

All recommended substitutes maintain ROHS3 compliance and REACH unaffected status, matching the original part's regulatory requirements. All parts carry EAR99 export classification and identical HTSUS codes (8541.29.0095), ensuring regulatory consistency in procurement and supply chain management.

Frequently Asked Questions (FAQ)

Q: Can the FQP50N06L-EPKE0003 directly replace the FDP55N06 in existing designs?

A: Yes, for most applications. The FQP50N06L-EPKE0003 maintains the same 60V voltage rating, TO-220-3 package, and similar current capacity (52.4A vs. 55A). The lower on-resistance and gate charge provide performance improvements. However, applications requiring the full 55A continuous current at maximum junction temperature should be evaluated against the FQP50N06L-EPKE0003's 52.4A rating.

Q: What is the difference between TO-220-3 and TO-220AB packages?

A: Both are through-hole packages with three leads (Gate, Drain, Source). TO-220-3 and TO-220AB are mechanically and electrically compatible for PCB mounting. The designations reflect different manufacturer conventions; the physical footprint and pin configuration are equivalent.

Q: Why does the FDP55N06 have a lower maximum operating temperature (150°C) compared to substitutes (175°C)?

A: The FDP55N06 is an older design from the UniFET™ series with more conservative thermal specifications. Modern MOSFET designs, including the recommended FQP50N06L-EPKE0003 and STMicroelectronics alternatives, incorporate improved semiconductor processes allowing higher junction temperature operation. The extended range provides additional design margin for thermal management.

Q: Is the IRFZ44VPBF suitable for new designs?

A: No. The IRFZ44VPBF carries a "Not For New Designs" product status, indicating Infineon has transitioned this part to legacy support. While electrically compatible and currently in stock, it should not be selected for new product development. Use FQP50N06L-EPKE0003, STP55NF06L, or STP60NF06 for new designs.

Q: How do I select between STP55NF06L and STP60NF06?

A: Both are active STMicroelectronics products with identical voltage ratings (60V) and TO-220-3 packages. STP55NF06L matches the original 55A current rating with lower power dissipation (95W). STP60NF06 provides 60A current capacity with slightly higher power dissipation (110W). Select STP55NF06L for thermal-constrained applications; select STP60NF06 for applications requiring higher current margins.

Q: What does "Rds On @ 27.5A, 10V" mean?

A: This specifies the on-resistance (Rds On) measurement conditions: the resistance between drain and source when the gate-source voltage is 10V and drain current is 27.5A. Lower on-resistance values indicate lower power dissipation during conduction. The FDP55N06's 22mOhm rating is typical for this device class; substitute parts with 16-21mOhm offer improved efficiency.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All recommended substitutes carry ROHS3 compliance certification, matching the original FDP55N06. This ensures compatibility with environmental and regulatory requirements across global markets.

Q: What is Gate Charge (Qg) and why does it matter?

A: Gate Charge is the total charge required to switch the MOSFET from off to on state at a specified gate-source voltage (10V in this case). Lower gate charge reduces switching losses and allows faster switching speeds. The FDP55N06's 37nC is moderate; substitutes range from 30nC (IRFB3806PBF) to 73nC (STP60NF06). Lower values improve efficiency in high-frequency switching applications.

Q: Can I use PSMN3R0-60PS,127 or PSMN4R6-60PS,127 as substitutes?

A: These Nexperia parts are listed as similar electrical alternatives but carry obsolete product status. While they meet voltage and package requirements, their obsolete classification makes them unsuitable for new designs or long-term production. They should only be considered for legacy system maintenance where existing design validation exists.

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