FDN342P Equivalent & Substitute Parts

Part Overview

The FDN342P is an active P-Channel MOSFET manufactured by onsemi, rated for 20V drain-to-source voltage with 2A continuous drain current at 25°C. The device is housed in a SOT-23-3 surface mount package and is designed for applications requiring compact, low-power switching functionality. The FDN342P operates across an extended temperature range of -55°C to 150°C and complies with RoHS3 and REACH standards.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter tolerances while maintaining the same package form factor and mounting technology. Substitution becomes necessary due to inventory availability, manufacturing discontinuation, or design optimization requirements.

Substiute Parts

FDN342P
onsemiIn Stock: 23303FDN342P Datasheet
FDN342P
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NTR1P02LT3G
onsemiIn Stock: 10220NTR1P02LT3G Datasheet
NTR1P02LT3G
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NTR4101PT1G
onsemiIn Stock: 245294NTR4101PT1G Datasheet
NTR4101PT1G
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AO3401A
UMWIn Stock: 220440AO3401A Datasheet
AO3401A
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AO3407A
UMWIn Stock: 888510AO3407A Datasheet
AO3407A
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AO3413
Alpha & Omega Semiconductor Inc.In Stock: 60497AO3413 Datasheet
AO3413
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AO3419
Alpha & Omega Semiconductor Inc.In Stock: 120384AO3419 Datasheet
AO3419
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DMP2160U-7
Diodes IncorporatedIn Stock: 48686DMP2160U-7 Datasheet
DMP2160U-7
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PJA3413_R1_00001
Panjit International Inc.In Stock: 88321PJA3413_R1_00001 Datasheet
PJA3413_R1_00001
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PMV65XP,215
Nexperia USA Inc.In Stock: 12837PMV65XP,215 Datasheet
PMV65XP,215
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PMV65XPER
Nexperia USA Inc.In Stock: 4293PMV65XPER Datasheet
PMV65XPER
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Key Parameters

Parameter FDN342P Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2 A
Rds On (Max) @ Id, Vgs 80 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id 1.5 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 4.5V
Vgs (Max) ±12 V
Input Capacitance (Ciss) (Max) @ Vds 635 pF @ 10V
Power Dissipation (Max) 500 mW
Operating Temperature -55 to 150 °C
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the FDN342P are classified based on the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • FET Type: P-Channel (mandatory match)
  • Drain to Source Voltage (Vdss): 20V minimum (equal or higher acceptable)
  • Continuous Drain Current (Id): 2A or greater at 25°C
  • Package / Case: SOT-23-3 or TO-236 equivalent (surface mount, 3-pin)
  • Mounting Type: Surface Mount
  • Operating Temperature Range: -55°C to 150°C minimum
  • RoHS3 Compliance: Required
  • Moisture Sensitivity Level: MSL 1 (Unlimited)

Secondary Electrical Parameters (performance optimization):

  • Rds On (Max): Lower values indicate improved efficiency
  • Gate Charge (Qg): Lower values reduce switching losses
  • Input Capacitance (Ciss): Affects gate drive requirements
  • Power Dissipation (Max): Thermal management capability

Substitutes are grouped into two categories:

Category A - Direct Substitutes (Vdss = 20V, Id ≥ 2A): Parts meeting or exceeding the FDN342P current rating while maintaining 20V voltage rating. These include NTR4101PT1G, AO3413, AO3419, DMP2160U-7, PJA3413_R1_00001, PMV65XP,215, and PMV65XPER.

Category B - Functional Substitutes (Vdss > 20V, Id ≥ 2A): Parts with higher voltage ratings (30V) that provide enhanced design margin. These include NTR1P02LT3G, AO3401A, and AO3407A. Higher voltage ratings do not compromise functionality in 20V applications.

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On (mOhm) Vgs(th) (V) Qg (nC) Ciss (pF) Power Diss. (mW) Temp Range (°C) Package RoHS3
FDN342P onsemi 20 2.0 80 @ 2A, 4.5V 1.5 @ 250µA 9 @ 4.5V 635 @ 10V 500 -55 to 150 SOT-23-3 Yes
NTR1P02LT3G onsemi 20 1.3 220 @ 750mA, 4.5V 1.25 @ 250µA 5.5 @ 4V 225 @ 5V 400 -55 to 150 SOT-23-3 Yes
NTR4101PT1G onsemi 20 1.8 85 @ 1.6A, 4.5V 1.2 @ 250µA 8.5 @ 4.5V 675 @ 10V 420 -55 to 150 SOT-23-3 Yes
AO3401A UMW 30 4.2 50 @ 4.2A, 10V 1.3 @ 250µA 9.4 @ 4.5V 954 @ 15V 1400 -55 to 150 SOT-23 No
AO3407A UMW 30 4.2 52 @ 4.1A, 10V 3.0 @ 250µA 14.3 @ 4.5V 700 @ 15V 1400 -55 to 150 SOT-23 Yes
AO3413 Alpha & Omega Semiconductor Inc. 20 3.0 97 @ 3A, 4.5V 1.0 @ 250µA 6.1 @ 4.5V 540 @ 10V 1400 -55 to 150 SOT-23-3 Yes
AO3419 Alpha & Omega Semiconductor Inc. 20 3.5 85 @ 3.5A, 10V 1.4 @ 250µA 4.4 @ 4.5V 400 @ 10V 1400 -55 to 150 SOT-23-3 Yes
DMP2160U-7 Diodes Incorporated 20 3.2 80 @ 1.5A, 4.5V 0.9 @ 250µA 627 @ 10V 1400 -55 to 150 SOT-23-3 Yes
PJA3413_R1_00001 Panjit International Inc. 20 3.4 82 @ 3.4A, 4.5V 1.2 @ 250µA 7.0 @ 4.5V 522 @ 10V 1250 -55 to 150 SOT-23 Yes
PMV65XP,215 Nexperia USA Inc. 20 2.8 74 @ 2.8A, 4.5V 0.9 @ 250µA 7.7 @ 4.5V 744 @ 20V 480 -55 to 150 TO-236AB Yes
PMV65XPER Nexperia USA Inc. 20 2.8 78 @ 2.8A, 4.5V 1.25 @ 250µA 9.0 @ 4.5V 618 @ 10V 480 -55 to 150 TO-236AB Yes

Engineering Selection Recommendations

Recommended Direct Substitutes (Vdss = 20V, Highest Current Capability):

  1. AO3419 (Alpha & Omega Semiconductor Inc.) — Highest current rating at 3.5A with 85 mOhm Rds On. Exceeds FDN342P performance specifications. RoHS3 compliant. Operating temperature range -55°C to 150°C matches FDN342P. Lowest gate charge at 4.4 nC reduces switching losses.

  2. AO3413 (Alpha & Omega Semiconductor Inc.) — 3.0A continuous drain current with 97 mOhm Rds On. RoHS3 compliant. Full temperature range compatibility. Suitable for applications requiring moderate current increase over FDN342P.

  3. PMV65XP,215 (Nexperia USA Inc.) — 2.8A continuous drain current with 74 mOhm Rds On. Lowest power dissipation at 480 mW (matches FDN342P). RoHS3 compliant. TO-236AB package maintains SOT-23-3 compatibility. Optimal for direct replacement with minimal thermal impact.

  4. PMV65XPER (Nexperia USA Inc.) — Identical electrical specifications to PMV65XP,215 with Tape & Reel packaging. RoHS3 compliant. Suitable for high-volume production environments.

  5. DMP2160U-7 (Diodes Incorporated) — 3.2A continuous drain current with 80 mOhm Rds On. RoHS3 compliant. Full temperature range. Provides current margin above FDN342P with comparable on-resistance.

  6. PJA3413_R1_00001 (Panjit International Inc.) — 3.4A continuous drain current with 82 mOhm Rds On. RoHS3 compliant. Operating temperature -55°C to 150°C. Moderate power dissipation at 1.25W.

Alternative Substitutes (Vdss = 20V, Lower Current):

  1. NTR4101PT1G (onsemi) — 1.8A continuous drain current with 85 mOhm Rds On. RoHS3 compliant. Suitable only for applications where FDN342P current rating exceeds design requirements. Reduces thermal load.

  2. NTR1P02LT3G (onsemi) — 1.3A continuous drain current. Not recommended for direct substitution due to current rating below FDN342P specification. Use only when design permits reduced current capacity.

Higher Voltage Alternatives (Vdss = 30V):

  1. AO3407A (UMW) — 30V rating with 4.2A current capability. RoHS3 compliant. Provides enhanced voltage margin for applications with potential overvoltage conditions. Higher gate charge (14.3 nC) and higher threshold voltage (3.0V) require gate drive circuit verification.

  2. AO3401A (UMW) — 30V rating with 4.2A current capability. Not RoHS3 compliant. Higher power dissipation (1.4W). Use only when RoHS3 compliance is not required and voltage margin is critical.

Selection Criteria Summary:

  • For direct replacement with minimal design changes: PMV65XP,215 or PMV65XPER
  • For increased current capacity: AO3419 or AO3413
  • For enhanced voltage margin: AO3407A (RoHS3 compliant)
  • For onsemi ecosystem continuity: NTR4101PT1G

All recommended substitutes maintain RoHS3 compliance, MSL 1 rating, and -55°C to 150°C operating temperature range unless otherwise noted.

Frequently Asked Questions (FAQ)

Q1: Can NTR1P02LT3G replace FDN342P in all applications?

A: No. NTR1P02LT3G is rated for 1.3A continuous drain current, which is below the FDN342P specification of 2.0A. Substitution is only valid for applications where the actual circuit current requirement does not exceed 1.3A. Verify circuit current draw before substitution.

Q2: What is the difference between PMV65XP,215 and PMV65XPER?

A: Both parts have identical electrical specifications (20V, 2.8A, 74-78 mOhm Rds On). The primary difference is packaging: PMV65XP,215 is supplied in Cut Tape (CT) & Digi-Reel format, while PMV65XPER is supplied in Tape & Reel (TR) format. Select based on procurement and assembly requirements.

Q3: Are AO3401A and AO3407A suitable replacements for FDN342P?

A: Both parts provide higher voltage rating (30V) and higher current capacity (4.2A), making them functionally compatible. However, AO3401A is not RoHS3 compliant. AO3407A is RoHS3 compliant but has a higher threshold voltage (3.0V vs. 1.5V), which may require gate drive circuit adjustment. Verify gate drive voltage compatibility before substitution.

Q4: What does Vgs(th) threshold voltage mean for substitution?

A: Vgs(th) is the gate-source voltage required to turn the MOSFET on at a specified drain current (250µA). Lower threshold voltages allow operation with lower gate drive voltages. FDN342P has Vgs(th) of 1.5V. Substitutes with significantly different threshold voltages (e.g., AO3407A at 3.0V) may require gate drive circuit redesign to ensure proper switching.

Q5: Can I use AO3413 or AO3419 instead of FDN342P?

A: Yes. Both parts are rated for 20V with higher current capacity (3.0A and 3.5A respectively) and are RoHS3 compliant with full temperature range compatibility. AO3419 offers superior performance with lower gate charge (4.4 nC) and lower input capacitance (400 pF), reducing switching losses. Both are direct substitutes with improved specifications.

Q6: What is the significance of Gate Charge (Qg) in substitution?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge reduces switching losses and allows faster switching speeds. FDN342P has 9 nC gate charge. AO3419 has 4.4 nC, providing improved efficiency. Higher gate charge (e.g., AO3407A at 14.3 nC) increases switching losses and may require stronger gate drive circuits.

Q7: Why do some substitutes have higher power dissipation ratings?

A: Power dissipation rating reflects the maximum thermal load the device can handle. Higher ratings (e.g., 1.4W vs. 500mW) indicate improved thermal performance or larger die size. This does not mean the device will dissipate more power in your circuit; actual dissipation depends on circuit current and on-resistance. Higher ratings provide additional thermal margin.

Q8: Is the SOT-23-3 package identical to TO-236-3?

A: Yes. SOT-23-3, TO-236-3, and SC-59 are equivalent package designations for the same 3-pin surface mount package. All substitute parts listed use this package family, ensuring mechanical and electrical compatibility with FDN342P PCB layouts.

Q9: What does RoHS3 compliance mean for my application?

A: RoHS3 (Restriction of Hazardous Substances Directive 3) compliance certifies that the component does not contain restricted substances including lead, cadmium, mercury, and certain flame retardants. RoHS3 compliance is mandatory for products sold in the European Union and increasingly required globally. All recommended substitutes are RoHS3 compliant except AO3401A.

Q10: Can I substitute FDN342P with a higher voltage rated device like AO3407A without circuit modifications?

A: Electrical substitution is possible because higher voltage rating does not compromise 20V operation. However, gate drive circuit verification is required. AO3407A has Vgs(th) of 3.0V compared to FDN342P's 1.5V, requiring higher gate drive voltage to ensure full on-state conduction. Verify gate drive voltage availability before substitution.

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