FDMS86103L N-Channel 100V 12A/49A MOSFET Equivalent & Substitute Parts

Part Overview

The FDMS86103L is an N-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage with continuous drain current of 12A at Ta (ambient temperature) and 49A at Tc (case temperature). This device operates in the PowerTrench® series and is housed in an 8-PQFN (5x6) surface mount package. The part is currently in Active product status with RoHS3 compliance and unlimited moisture sensitivity level (MSL 1).

Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters including drain-to-source voltage rating, continuous drain current capability, on-resistance characteristics, gate charge, and thermal performance. Substitutes must maintain compatibility with the 8-PowerTDFN package family and surface mount assembly requirements.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current @ 25°C (Ta)	12	A
Continuous Drain Current @ 25°C (Tc)	49	A
On-Resistance (Rds On) @ 12A, 10V	8	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	3	V
Gate Charge (Qg) @ 10V	60	nC
Input Capacitance (Ciss) @ 50V	3710	pF
Power Dissipation (Ta)	2.5	W
Power Dissipation (Tc)	104	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-PQFN (5x6)	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the FDMS86103L is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain a minimum Vdss of 100V to ensure safe operation in circuits designed for the FDMS86103L. Parts rated at 120V or higher are acceptable as they provide additional voltage margin.

Continuous Drain Current: Substitute parts must support continuous drain current at or above 12A (Ta) and 49A (Tc) to handle the same load conditions. Higher current ratings provide design flexibility and thermal headroom.

On-Resistance (Rds On): The FDMS86103L specifies 8mOhm maximum at 12A and 10V gate drive. Substitute parts with equal or lower on-resistance minimize power dissipation and heat generation in the application.

Gate Charge (Qg): Gate charge affects switching speed and driver requirements. The FDMS86103L specifies 60nC maximum at 10V. Substitute parts with comparable or lower gate charge maintain switching performance.

Package Compatibility: All substitute parts are housed in 8-PowerTDFN or equivalent surface mount packages (8-PQFN, 8-TDSON, 8-VSONP, PowerFlat™) with 5x6mm footprints, ensuring PCB layout compatibility.

Thermal Performance: Substitute parts must support power dissipation at or above 104W (Tc) to handle thermal loads equivalent to the FDMS86103L.

Temperature Range: All substitute parts operate across the -55°C to 150°C range, with some extending to 175°C, maintaining or exceeding the FDMS86103L specification.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ Ta (A)	Id @ Tc (A)	Rds On (mOhm)	Qg @ 10V (nC)	Ciss @ 50V (pF)	Power Diss. Tc (W)	Package	Status
FDMS86103L	onsemi	100	12	49	8	60	3710	104	8-PQFN (5x6)	Active
BSC070N10NS3GATMA1	Infineon	100	—	90	7	55	4000	114	PG-TDSON-8-1	Active
BSC077N12NS3GATMA1	Infineon	120	13.4	98	7.7	88	5700	139	PG-TDSON-8-1	Active
BSC082N10LSGATMA1	Infineon	100	13.8	100	8.2	104	7400	156	PG-TDSON-8-1	Not For New Designs
CSD19531Q5AT	Texas Instruments	100	100	—	6.4	48	3870	125	8-VSONP (5x6)	Active
STL100N10F7	STMicroelectronics	100	—	80	7.3	80	5680	100	PowerFlat™ (5x6)	Active
STL110N10F7	STMicroelectronics	100	—	107	6	72	5117	136	PowerFlat™ (5x6)	Active

Engineering Selection Recommendations

Active Product Status: The FDMS86103L is in Active status. Among substitute parts, BSC070N10NS3GATMA1, BSC077N12NS3GATMA1, CSD19531Q5AT, STL100N10F7, and STL110N10F7 are all in Active status and are suitable for new designs. The BSC082N10LSGATMA1 is marked "Not For New Designs" and should be avoided in new applications.

Compliance and Certifications: All listed substitute parts maintain RoHS3 compliance and MSL 1 (unlimited moisture sensitivity), matching the FDMS86103L environmental requirements. The CSD19531Q5AT carries REACH Affected status, whereas the FDMS86103L and all other substitutes are REACH Unaffected. This distinction may be relevant for specific regulatory jurisdictions.

Voltage Margin: The BSC077N12NS3GATMA1 offers a 120V Vdss rating, providing 20V additional margin over the FDMS86103L's 100V rating. This is beneficial in applications with voltage transients or marginal supply regulation.

Current Capability: The STL110N10F7 and BSC082N10LSGATMA1 provide the highest continuous drain current at case temperature (107A and 100A respectively), offering significant thermal headroom. The BSC070N10NS3GATMA1 (90A) and STL100N10F7 (80A) also exceed the FDMS86103L's 49A rating.

On-Resistance Performance: The CSD19531Q5AT exhibits the lowest on-resistance at 6.4mOhm, followed by STL110N10F7 at 6mOhm. These parts minimize conduction losses. The BSC070N10NS3GATMA1 and BSC077N12NS3GATMA1 both specify 7mOhm, providing comparable efficiency to the FDMS86103L's 8mOhm specification.

Gate Charge Considerations: The CSD19531Q5AT has the lowest gate charge at 48nC, reducing driver power requirements. The BSC070N10NS3GATMA1 at 55nC is also favorable. Higher gate charge values (BSC077N12NS3GATMA1 at 88nC, BSC082N10LSGATMA1 at 104nC) may require stronger gate drivers.

Temperature Range: The STL100N10F7 and STL110N10F7 extend the operating temperature range to 175°C, providing 25°C additional margin above the FDMS86103L's 150°C maximum.

Package Footprint Compatibility: All substitute parts use 5x6mm surface mount packages within the 8-PowerTDFN family, ensuring direct PCB layout compatibility with the FDMS86103L.

Frequently Asked Questions (FAQ)

Q: Can the BSC082N10LSGATMA1 be used as a direct replacement for the FDMS86103L?

A: The BSC082N10LSGATMA1 meets all electrical parameter requirements and shares the same 100V Vdss rating and 8-PowerTDFN package family. However, this part is marked "Not For New Designs" by Infineon. It is electrically compatible but should not be selected for new applications. Use BSC070N10NS3GATMA1 or other Active-status alternatives instead.

Q: What is the primary advantage of the STL110N10F7 over the FDMS86103L?

A: The STL110N10F7 provides 107A continuous drain current at case temperature (versus 49A for the FDMS86103L), lower on-resistance at 6mOhm, and an extended operating temperature range to 175°C. These characteristics deliver superior thermal performance and switching efficiency in high-current applications.

Q: Are there package differences between the FDMS86103L and its substitutes?

A: The FDMS86103L uses an 8-PQFN (5x6) package. Substitute parts use equivalent 8-PowerTDFN family packages: 8-PQFN, PG-TDSON-8-1, 8-VSONP, and PowerFlat™. All maintain the same 5x6mm footprint and surface mount assembly compatibility. Pin configurations and thermal pad layouts are functionally equivalent within the 8-PowerTDFN family.

Q: Which substitute part has the lowest gate charge?

A: The CSD19531Q5AT (Texas Instruments NexFET™ series) has the lowest gate charge at 48nC at 10V, compared to the FDMS86103L's 60nC. Lower gate charge reduces gate driver power dissipation and enables faster switching transitions.

Q: Does the BSC077N12NS3GATMA1 provide any advantage despite its higher Vdss rating?

A: Yes. The BSC077N12NS3GATMA1's 120V Vdss rating provides 20V additional voltage margin, beneficial in applications with supply voltage transients or where circuit protection against overvoltage is required. It also delivers 98A continuous drain current at case temperature and 139W power dissipation capability, exceeding the FDMS86103L's thermal performance.

Q: What is the significance of the REACH Affected status on the CSD19531Q5AT?

A: REACH Affected status indicates the part may contain substances of concern under EU REACH regulations. This designation does not affect electrical performance but may impact supply chain compliance requirements in specific regulatory jurisdictions. The FDMS86103L and most other substitutes are REACH Unaffected.

Q: Can I use the BSC070N10NS3GATMA1 in a design originally specified for the FDMS86103L?

A: Yes. The BSC070N10NS3GATMA1 is electrically compatible with the FDMS86103L, offering 100V Vdss, 90A continuous drain current at case temperature, 7mOhm on-resistance, and Active product status. The primary consideration is gate charge at 55nC (lower than FDMS86103L's 60nC), which may require gate driver adjustment if timing-critical.

Q: Which substitute offers the best thermal performance?

A: The BSC082N10LSGATMA1 provides the highest power dissipation capability at 156W (case temperature), followed by BSC077N12NS3GATMA1 at 139W and STL110N10F7 at 136W. However, the BSC082N10LSGATMA1 is not recommended for new designs. Among Active-status parts, the STL110N10F7 and BSC077N12NS3GATMA1 offer superior thermal performance.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts, including the FDMS86103L, are RoHS3 compliant and carry MSL 1 (unlimited) moisture sensitivity level, meeting identical environmental and regulatory standards.

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