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FDMC8878 N-Channel MOSFET Equivalent & Substitute Parts
Part Overview
The FDMC8878 is an N-Channel 30V MOSFET manufactured by onsemi in the PowerTrench® series. This device is rated for 9.6A continuous drain current (Ta) and 16.5A (Tc) with a maximum on-resistance of 14mOhm at 10V gate-source voltage. The part is housed in an 8-MLP (3.3x3.3) surface mount package.
The FDMC8878 carries an Obsolete product status. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this MOSFET topology.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 30 | V |
| Continuous Drain Current @ 25°C (Ta) | 9.6 | A |
| Continuous Drain Current @ 25°C (Tc) | 16.5 | A |
| On-Resistance (Rds On) @ 10V Vgs | 14 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 3 | V |
| Gate Charge (Qg) @ 10V | 26 | nC |
| Input Capacitance (Ciss) @ 15V | 1230 | pF |
| Power Dissipation (Ta) | 2.1 | W |
| Power Dissipation (Tc) | 31 | W |
| Operating Temperature Range | -55 to 150 | °C |
| Package Type | 8-MLP (3.3x3.3) | Surface Mount |
| RoHS Status | ROHS3 Compliant | - |
| Moisture Sensitivity Level | 1 (Unlimited) | - |
Substitute Part Grouping Explanation
Substitution of the FDMC8878 is determined by electrical and mechanical compatibility across the following critical parameters:
Electrical Compatibility Criteria:
- Drain to Source Voltage (Vdss) must equal or exceed 30V
- Continuous drain current must support the application's current requirements
- On-resistance (Rds On) must be compatible with thermal and efficiency constraints
- Gate threshold voltage and gate charge must be compatible with driver circuitry
- Operating temperature range must encompass -55°C to 150°C
Mechanical Compatibility Criteria:
- Surface mount package type must be compatible with PCB layout and assembly processes
- Package footprint dimensions must accommodate existing board designs or allow minor layout adjustments
- Moisture sensitivity level must be MSL 1 or equivalent
Compliance Requirements:
- RoHS3 compliance is mandatory
- REACH unaffected status is required
Substitute parts are grouped into two categories: Manufacturer Recommended (direct onsemi replacement) and Similar Alternatives (functionally equivalent parts from other manufacturers meeting all electrical and mechanical criteria).
Parameter Comparison
| Parameter | FDMC8878 | FDMC8882 | BSZ0909NSATMA1 | BSZ130N03LSGATMA1 | BSZ130N03MSGATMA1 | RQ3E080BNTB | RQ3E100MNTB1 | TSM180N03PQ33 RGG |
|---|---|---|---|---|---|---|---|---|
| Manufacturer | onsemi | onsemi | Infineon | Infineon | Infineon | Rohm | Rohm | Taiwan Semiconductor |
| Vdss (V) | 30 | 30 | 34 | 30 | 30 | 30 | 30 | 30 |
| Id @ 25°C Ta (A) | 9.6 | 10.5 | 9 | 10 | 9 | 8 | 10 | — |
| Id @ 25°C Tc (A) | 16.5 | 16 | 36 | 35 | 35 | — | — | 25 |
| Rds On @ 10V (mOhm) | 14 | 14.3 | 12 | 13 | 11.5 | 15.2 | 12.3 | 18 |
| Vgs(th) @ 250µA (V) | 3 | 2.5 | 2 | 2.2 | 2 | 2.5 | 2.5 | 2.5 |
| Qg @ 10V (nC) | 26 | 20 | 17 | 13 | 17 | 14.5 | 9.9 | 4.1 |
| Ciss @ 15V (pF) | 1230 | 945 | 1310 | 970 | 1300 | 660 | 520 | 345 |
| Power Dissipation Ta (W) | 2.1 | 2.3 | 2.1 | 2.1 | 2.1 | 2 | 2 | — |
| Power Dissipation Tc (W) | 31 | 18 | 25 | 25 | 25 | — | — | 21 |
| Operating Temp Range (°C) | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | to 150 | to 150 | to 150 |
| Package | 8-MLP (3.3x3.3) | 8-MLP (3.3x3.3) | PG-TSDSON-8 | PG-TSDSON-8 | PG-TSDSON-8 | 8-HSMT (3.2x3) | 8-HSMT (3.2x3) | 8-PDFN (3.1x3.08) |
| Product Status | Obsolete | Active | Active | Active | Active | Active | Not For New Designs | Active |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| MSL | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
Engineering Selection Recommendations
Manufacturer Recommended Substitute: FDMC8882
The FDMC8882 is the primary substitute for the obsolete FDMC8878. Both devices are manufactured by onsemi within the PowerTrench® series and share identical package geometry (8-MLP 3.3x3.3). The FDMC8882 carries Active product status, ensuring long-term availability and supply chain support. Electrical parameters are closely matched: Vdss remains 30V, continuous drain current is 10.5A (Ta) versus 9.6A, and on-resistance is 14.3mOhm versus 14mOhm. Gate threshold voltage is lower (2.5V versus 3V), and gate charge is reduced (20nC versus 26nC), resulting in improved switching characteristics. Both parts are ROHS3 compliant with MSL 1 rating. The FDMC8882 is suitable for direct replacement in existing designs without PCB layout modifications.
Alternative Substitutes: Infineon OptiMOS™ Series
The BSZ130N03MSGATMA1 and BSZ130N03LSGATMA1 are Infineon OptiMOS™ devices with 30V Vdss rating and superior electrical performance. Both feature lower on-resistance (11.5mOhm and 13mOhm respectively) and significantly reduced gate charge (17nC and 13nC). These parts are housed in PG-TSDSON-8 packages (8-PowerTDFN), which differ from the original 8-MLP package and require PCB layout modifications. Both are Active status with ROHS3 compliance and MSL 1 rating. The BSZ0909NSATMA1 offers 34V Vdss rating with 12mOhm on-resistance and 17nC gate charge in a PG-TSDSON-8 package, providing additional voltage margin for applications requiring higher transient protection.
Alternative Substitutes: Rohm Semiconductor Series
The RQ3E100MNTB1 and RQ3E080BNTB are Rohm devices in 8-HSMT packages (3.2x3 dimensions). The RQ3E100MNTB1 provides 10A continuous drain current with 12.3mOhm on-resistance and carries Not For New Designs status, limiting its suitability for new applications. The RQ3E080BNTB is Active status with 8A continuous drain current and 15.2mOhm on-resistance. Both require PCB layout adjustments due to package differences. Both are ROHS3 compliant with MSL 1 rating.
Alternative Substitute: Taiwan Semiconductor TSM180N03PQ33 RGG
The TSM180N03PQ33 RGG is a high-current device rated for 25A (Tc) with 30V Vdss in an 8-PDFN package (3.1x3.08). On-resistance is 18mOhm at 12A, and gate charge is significantly reduced to 4.1nC at 4.5V. This part is suitable for applications requiring higher current handling capability. Active product status, ROHS3 compliance, and MSL 1 rating are confirmed. Package dimensions differ from the original, requiring PCB layout evaluation.
Selection Criteria Summary:
For direct replacement without PCB modifications: Select FDMC8882.
For applications requiring improved switching performance and accepting package changes: Select BSZ130N03MSGATMA1 or BSZ130N03LSGATMA1.
For applications requiring higher voltage margin: Select BSZ0909NSATMA1.
For applications requiring higher current capability: Select TSM180N03PQ33 RGG.
All recommended substitutes maintain ROHS3 compliance, MSL 1 rating, and -55°C to 150°C operating temperature range.
Frequently Asked Questions (FAQ)
Q: Can the FDMC8882 be used as a direct replacement for the FDMC8878 without PCB modifications?
A: Yes. The FDMC8882 shares identical package geometry (8-MLP 3.3x3.3) with the FDMC8878. Electrical parameters are compatible, with the FDMC8882 offering improved performance characteristics. No PCB layout changes are required.
Q: What is the primary reason for substituting the FDMC8878?
A: The FDMC8878 carries Obsolete product status. The FDMC8882 is the manufacturer-recommended replacement, offering Active status and long-term supply availability.
Q: Do the Infineon OptiMOS™ alternatives require PCB layout changes?
A: Yes. The BSZ130N03MSGATMA1, BSZ130N03LSGATMA1, and BSZ0909NSATMA1 are housed in PG-TSDSON-8 packages (8-PowerTDFN), which differ from the original 8-MLP package. PCB footprint and layout modifications are necessary.
Q: What are the key electrical differences between the FDMC8878 and FDMC8882?
A: The FDMC8882 offers slightly higher continuous drain current (10.5A Ta versus 9.6A), marginally higher on-resistance (14.3mOhm versus 14mOhm), lower gate threshold voltage (2.5V versus 3V), and reduced gate charge (20nC versus 26nC). These differences result in improved switching speed and reduced driver power requirements.
Q: Are all substitute parts RoHS3 compliant?
A: Yes. All substitute parts listed carry ROHS3 compliance certification and are suitable for applications requiring RoHS compliance.
Q: What is the moisture sensitivity level for all substitute parts?
A: All substitute parts carry MSL 1 (Unlimited) rating, matching the original FDMC8878 specification.
Q: Which substitute offers the lowest on-resistance?
A: The BSZ130N03MSGATMA1 offers the lowest on-resistance at 11.5mOhm at 20A and 10V Vgs, compared to 14mOhm for the FDMC8878.
Q: Which substitute offers the lowest gate charge?
A: The TSM180N03PQ33 RGG offers the lowest gate charge at 4.1nC at 4.5V Vgs, enabling fastest switching transitions and lowest driver power dissipation.
Q: Can the RQ3E100MNTB1 be used in new designs?
A: The RQ3E100MNTB1 carries Not For New Designs product status. While functionally compatible, it is not recommended for new applications. The FDMC8882 or Infineon alternatives are preferred for new designs.
Q: What package considerations apply when selecting a substitute?
A: The FDMC8882 maintains the original 8-MLP (3.3x3.3) package, requiring no PCB changes. Alternative manufacturers offer different packages: Infineon uses PG-TSDSON-8 (8-PowerTDFN), Rohm uses 8-HSMT (3.2x3), and Taiwan Semiconductor uses 8-PDFN (3.1x3.08). Package selection depends on PCB layout constraints and assembly capabilities.
Q: Do all substitutes support the full -55°C to 150°C operating temperature range?
A: Yes. All substitute parts support operating temperatures to 150°C. The lower temperature limit of -55°C is supported by all listed alternatives.
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