FDMC8878 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDMC8878 is an N-Channel 30V MOSFET manufactured by onsemi in the PowerTrench® series. This device is rated for 9.6A continuous drain current (Ta) and 16.5A (Tc) with a maximum on-resistance of 14mOhm at 10V gate-source voltage. The part is housed in an 8-MLP (3.3x3.3) surface mount package.

The FDMC8878 carries an Obsolete product status. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this MOSFET topology.

Substiute Parts

FDMC8878
onsemiIn Stock: 23152FDMC8878 Datasheet
FDMC8878
Current Part
FDMC8882
onsemiIn Stock: 15537FDMC8882 Datasheet
FDMC8882
MFR Recommended
BSZ0909NSATMA1
Infineon TechnologiesIn Stock: 20496BSZ0909NSATMA1 Datasheet
BSZ0909NSATMA1
Similar
BSZ130N03LSGATMA1
Infineon TechnologiesIn Stock: 29951BSZ130N03LSGATMA1 Datasheet
BSZ130N03LSGATMA1
Similar
BSZ130N03MSGATMA1
Infineon TechnologiesIn Stock: 17169BSZ130N03MSGATMA1 Datasheet
BSZ130N03MSGATMA1
Similar
RQ3E080BNTB
Rohm SemiconductorIn Stock: 1672RQ3E080BNTB Datasheet
RQ3E080BNTB
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RQ3E100MNTB1
Rohm SemiconductorIn Stock: 6090RQ3E100MNTB1 Datasheet
RQ3E100MNTB1
Similar
TSM180N03PQ33 RGG
Taiwan Semiconductor CorporationIn Stock: 11182TSM180N03PQ33 RGG Datasheet
TSM180N03PQ33 RGG
Similar

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 30 V
Continuous Drain Current @ 25°C (Ta) 9.6 A
Continuous Drain Current @ 25°C (Tc) 16.5 A
On-Resistance (Rds On) @ 10V Vgs 14 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 3 V
Gate Charge (Qg) @ 10V 26 nC
Input Capacitance (Ciss) @ 15V 1230 pF
Power Dissipation (Ta) 2.1 W
Power Dissipation (Tc) 31 W
Operating Temperature Range -55 to 150 °C
Package Type 8-MLP (3.3x3.3) Surface Mount
RoHS Status ROHS3 Compliant -
Moisture Sensitivity Level 1 (Unlimited) -

Substitute Part Grouping Explanation

Substitution of the FDMC8878 is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

  • Drain to Source Voltage (Vdss) must equal or exceed 30V
  • Continuous drain current must support the application's current requirements
  • On-resistance (Rds On) must be compatible with thermal and efficiency constraints
  • Gate threshold voltage and gate charge must be compatible with driver circuitry
  • Operating temperature range must encompass -55°C to 150°C

Mechanical Compatibility Criteria:

  • Surface mount package type must be compatible with PCB layout and assembly processes
  • Package footprint dimensions must accommodate existing board designs or allow minor layout adjustments
  • Moisture sensitivity level must be MSL 1 or equivalent

Compliance Requirements:

  • RoHS3 compliance is mandatory
  • REACH unaffected status is required

Substitute parts are grouped into two categories: Manufacturer Recommended (direct onsemi replacement) and Similar Alternatives (functionally equivalent parts from other manufacturers meeting all electrical and mechanical criteria).

Parameter Comparison

Parameter FDMC8878 FDMC8882 BSZ0909NSATMA1 BSZ130N03LSGATMA1 BSZ130N03MSGATMA1 RQ3E080BNTB RQ3E100MNTB1 TSM180N03PQ33 RGG
Manufacturer onsemi onsemi Infineon Infineon Infineon Rohm Rohm Taiwan Semiconductor
Vdss (V) 30 30 34 30 30 30 30 30
Id @ 25°C Ta (A) 9.6 10.5 9 10 9 8 10
Id @ 25°C Tc (A) 16.5 16 36 35 35 25
Rds On @ 10V (mOhm) 14 14.3 12 13 11.5 15.2 12.3 18
Vgs(th) @ 250µA (V) 3 2.5 2 2.2 2 2.5 2.5 2.5
Qg @ 10V (nC) 26 20 17 13 17 14.5 9.9 4.1
Ciss @ 15V (pF) 1230 945 1310 970 1300 660 520 345
Power Dissipation Ta (W) 2.1 2.3 2.1 2.1 2.1 2 2
Power Dissipation Tc (W) 31 18 25 25 25 21
Operating Temp Range (°C) -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 to 150 to 150 to 150
Package 8-MLP (3.3x3.3) 8-MLP (3.3x3.3) PG-TSDSON-8 PG-TSDSON-8 PG-TSDSON-8 8-HSMT (3.2x3) 8-HSMT (3.2x3) 8-PDFN (3.1x3.08)
Product Status Obsolete Active Active Active Active Active Not For New Designs Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
MSL 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

Manufacturer Recommended Substitute: FDMC8882

The FDMC8882 is the primary substitute for the obsolete FDMC8878. Both devices are manufactured by onsemi within the PowerTrench® series and share identical package geometry (8-MLP 3.3x3.3). The FDMC8882 carries Active product status, ensuring long-term availability and supply chain support. Electrical parameters are closely matched: Vdss remains 30V, continuous drain current is 10.5A (Ta) versus 9.6A, and on-resistance is 14.3mOhm versus 14mOhm. Gate threshold voltage is lower (2.5V versus 3V), and gate charge is reduced (20nC versus 26nC), resulting in improved switching characteristics. Both parts are ROHS3 compliant with MSL 1 rating. The FDMC8882 is suitable for direct replacement in existing designs without PCB layout modifications.

Alternative Substitutes: Infineon OptiMOS™ Series

The BSZ130N03MSGATMA1 and BSZ130N03LSGATMA1 are Infineon OptiMOS™ devices with 30V Vdss rating and superior electrical performance. Both feature lower on-resistance (11.5mOhm and 13mOhm respectively) and significantly reduced gate charge (17nC and 13nC). These parts are housed in PG-TSDSON-8 packages (8-PowerTDFN), which differ from the original 8-MLP package and require PCB layout modifications. Both are Active status with ROHS3 compliance and MSL 1 rating. The BSZ0909NSATMA1 offers 34V Vdss rating with 12mOhm on-resistance and 17nC gate charge in a PG-TSDSON-8 package, providing additional voltage margin for applications requiring higher transient protection.

Alternative Substitutes: Rohm Semiconductor Series

The RQ3E100MNTB1 and RQ3E080BNTB are Rohm devices in 8-HSMT packages (3.2x3 dimensions). The RQ3E100MNTB1 provides 10A continuous drain current with 12.3mOhm on-resistance and carries Not For New Designs status, limiting its suitability for new applications. The RQ3E080BNTB is Active status with 8A continuous drain current and 15.2mOhm on-resistance. Both require PCB layout adjustments due to package differences. Both are ROHS3 compliant with MSL 1 rating.

Alternative Substitute: Taiwan Semiconductor TSM180N03PQ33 RGG

The TSM180N03PQ33 RGG is a high-current device rated for 25A (Tc) with 30V Vdss in an 8-PDFN package (3.1x3.08). On-resistance is 18mOhm at 12A, and gate charge is significantly reduced to 4.1nC at 4.5V. This part is suitable for applications requiring higher current handling capability. Active product status, ROHS3 compliance, and MSL 1 rating are confirmed. Package dimensions differ from the original, requiring PCB layout evaluation.

Selection Criteria Summary:

For direct replacement without PCB modifications: Select FDMC8882.

For applications requiring improved switching performance and accepting package changes: Select BSZ130N03MSGATMA1 or BSZ130N03LSGATMA1.

For applications requiring higher voltage margin: Select BSZ0909NSATMA1.

For applications requiring higher current capability: Select TSM180N03PQ33 RGG.

All recommended substitutes maintain ROHS3 compliance, MSL 1 rating, and -55°C to 150°C operating temperature range.

Frequently Asked Questions (FAQ)

Q: Can the FDMC8882 be used as a direct replacement for the FDMC8878 without PCB modifications?

A: Yes. The FDMC8882 shares identical package geometry (8-MLP 3.3x3.3) with the FDMC8878. Electrical parameters are compatible, with the FDMC8882 offering improved performance characteristics. No PCB layout changes are required.

Q: What is the primary reason for substituting the FDMC8878?

A: The FDMC8878 carries Obsolete product status. The FDMC8882 is the manufacturer-recommended replacement, offering Active status and long-term supply availability.

Q: Do the Infineon OptiMOS™ alternatives require PCB layout changes?

A: Yes. The BSZ130N03MSGATMA1, BSZ130N03LSGATMA1, and BSZ0909NSATMA1 are housed in PG-TSDSON-8 packages (8-PowerTDFN), which differ from the original 8-MLP package. PCB footprint and layout modifications are necessary.

Q: What are the key electrical differences between the FDMC8878 and FDMC8882?

A: The FDMC8882 offers slightly higher continuous drain current (10.5A Ta versus 9.6A), marginally higher on-resistance (14.3mOhm versus 14mOhm), lower gate threshold voltage (2.5V versus 3V), and reduced gate charge (20nC versus 26nC). These differences result in improved switching speed and reduced driver power requirements.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed carry ROHS3 compliance certification and are suitable for applications requiring RoHS compliance.

Q: What is the moisture sensitivity level for all substitute parts?

A: All substitute parts carry MSL 1 (Unlimited) rating, matching the original FDMC8878 specification.

Q: Which substitute offers the lowest on-resistance?

A: The BSZ130N03MSGATMA1 offers the lowest on-resistance at 11.5mOhm at 20A and 10V Vgs, compared to 14mOhm for the FDMC8878.

Q: Which substitute offers the lowest gate charge?

A: The TSM180N03PQ33 RGG offers the lowest gate charge at 4.1nC at 4.5V Vgs, enabling fastest switching transitions and lowest driver power dissipation.

Q: Can the RQ3E100MNTB1 be used in new designs?

A: The RQ3E100MNTB1 carries Not For New Designs product status. While functionally compatible, it is not recommended for new applications. The FDMC8882 or Infineon alternatives are preferred for new designs.

Q: What package considerations apply when selecting a substitute?

A: The FDMC8882 maintains the original 8-MLP (3.3x3.3) package, requiring no PCB changes. Alternative manufacturers offer different packages: Infineon uses PG-TSDSON-8 (8-PowerTDFN), Rohm uses 8-HSMT (3.2x3), and Taiwan Semiconductor uses 8-PDFN (3.1x3.08). Package selection depends on PCB layout constraints and assembly capabilities.

Q: Do all substitutes support the full -55°C to 150°C operating temperature range?

A: Yes. All substitute parts support operating temperatures to 150°C. The lower temperature limit of -55°C is supported by all listed alternatives.

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