FDMC6683PZ Equivalent & Substitute Parts

Part Overview

The FDMC6683PZ is a P-Channel MOSFET manufactured by onsemi, rated for 20V drain-to-source voltage with 40A continuous drain current at case temperature. This device is housed in an 8-MLP (3.3x3.3) surface mount package and is part of the PowerTrench® series. The FDMC6683PZ is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, production continuity, and system maintenance.

Substiute Parts

FDMC6683PZ

onsemiIn Stock: 17462FDMC6683PZ Datasheet

Current PartRFQ

BSZ086P03NS3EGATMA1

Infineon TechnologiesIn Stock: 2149BSZ086P03NS3EGATMA1 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDMC6683PZ is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

• FET Type: P-Channel topology required
• Drain to Source Voltage (Vdss): Substitute must equal or exceed 20V rating
• Continuous Drain Current (Id): Substitute must support 40A at case temperature (Tc)
• Power Dissipation: Substitute must handle thermal requirements at rated current
• Operating Temperature Range: Substitute must cover -55°C to 150°C (TJ)
• Mounting Type: Surface mount configuration required
• Package Compatibility: Physical and electrical interface must accommodate board-level integration

The BSZ086P03NS3EGATMA1 from Infineon Technologies meets these substitution criteria through equivalent P-Channel topology, higher voltage rating (30V Vdss), matching 40A continuous drain current at case temperature, and compatible surface mount packaging with extended thermal performance characteristics.

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The FDMC6683PZ is classified as obsolete. The BSZ086P03NS3EGATMA1 is classified as active, ensuring continued availability, manufacturing support, and compliance with current industry standards.

Compliance and Certification: Both devices are REACH Unaffected and classified under ECCN EAR99. The BSZ086P03NS3EGATMA1 carries RoHS3 Compliance certification, meeting modern regulatory requirements for new designs and production environments. The FDMC6683PZ does not specify RoHS status.

Electrical Performance: The BSZ086P03NS3EGATMA1 provides higher drain-to-source voltage rating (30V versus 20V), enabling operation in higher voltage applications while maintaining the required 40A continuous drain current. Enhanced power dissipation capability (69W at Tc versus 26W at Tc) provides thermal margin in demanding applications. Lower gate charge (57.5 nC versus 74 nC) reduces switching losses and driver requirements.

Packaging and Thermal: Both devices employ surface mount technology. The BSZ086P03NS3EGATMA1 uses PG-TSDSON-8 packaging with superior thermal performance characteristics, supporting higher power dissipation ratings. Moisture sensitivity level for the BSZ086P03NS3EGATMA1 is rated at MSL 1 (Unlimited), indicating robust handling characteristics.

Frequently Asked Questions (FAQ)

Q: Can the BSZ086P03NS3EGATMA1 directly replace the FDMC6683PZ in existing designs?

A: Direct replacement is possible when the application operates at or below 20V drain-to-source voltage. The higher 30V rating of the BSZ086P03NS3EGATMA1 provides voltage margin without compromising performance at lower voltages. Physical footprint compatibility must be verified, as the devices use different package designations (8-MLP versus PG-TSDSON-8).

Q: What are the key electrical differences between these devices?

A: Both devices maintain 40A continuous drain current at case temperature and -55°C to 150°C operating range. The BSZ086P03NS3EGATMA1 offers higher voltage rating (30V versus 20V), lower gate charge (57.5 nC versus 74 nC), higher maximum gate voltage (±25V versus ±12V), and superior power dissipation capability (69W versus 26W at Tc).

Q: Are there package compatibility considerations?

A: Yes. The FDMC6683PZ uses 8-MLP (3.3x3.3) packaging, while the BSZ086P03NS3EGATMA1 uses PG-TSDSON-8 packaging. PCB layout modifications may be required to accommodate the different package footprints. Pin configuration and electrical interface must be verified against schematic requirements.

Q: Why is the BSZ086P03NS3EGATMA1 recommended for new designs?

A: The BSZ086P03NS3EGATMA1 is classified as active with current manufacturing support, RoHS3 compliance, and superior thermal performance. The FDMC6683PZ is obsolete, limiting long-term availability and support. For production continuity and regulatory compliance, the active substitute is the appropriate selection.

Q: Does the higher voltage rating of the BSZ086P03NS3EGATMA1 affect circuit operation?

A: No. A device with higher voltage rating operates correctly in circuits designed for lower voltages. The 30V rating of the BSZ086P03NS3EGATMA1 provides design margin and enables use in higher voltage applications without circuit modification, provided all other electrical parameters remain within specification.

Q: What is the significance of lower gate charge in the BSZ086P03NS3EGATMA1?

A: Lower gate charge (57.5 nC versus 74 nC) reduces the charge required to switch the device, resulting in lower switching losses, reduced driver power requirements, and potentially faster switching transitions. This improves overall circuit efficiency and thermal performance.