FDG8842CZ Equivalent & Substitute Parts

Part Overview

The FDG8842CZ is an obsolete N and P-Channel MOSFET array manufactured by onsemi, designed for surface mount applications in the SC-88 (SC-70-6) package. This dual-channel device operates at 30V and 25V drain-to-source voltage ratings with continuous drain currents of 750mA and 410mA respectively. The part belongs to the PowerTrench® series and features logic level gate operation suitable for low-voltage switching applications.

Due to its obsolete product status, locating new inventory from original sources presents supply chain challenges. Identifying equivalent substitute parts with compatible electrical and mechanical specifications ensures design continuity and manufacturing feasibility.

Substiute Parts

FDG8842CZ

onsemiIn Stock: 33116FDG8842CZ Datasheet

Current PartRFQ

NTJD4105CT1G

onsemiIn Stock: 35492NTJD4105CT1G Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDG8842CZ is determined by the following critical parameters:

Package Compatibility: The substitute part must use the 6-TSSOP/SC-88/SOT-363 surface mount package to ensure mechanical and electrical compatibility with existing PCB layouts and assembly processes.

Configuration: The substitute must maintain N and P-Channel dual-channel configuration to preserve circuit functionality.

Logic Level Gate Operation: The substitute must support logic level gate switching to maintain compatibility with standard digital control signals.

Electrical Performance Envelope: The substitute must operate within the application's voltage and current requirements. While the FDG8842CZ specifies 30V/25V Vdss ratings with 750mA/410mA continuous drain currents, substitute parts with lower voltage ratings (20V/8V) and comparable or higher current ratings (630mA/775mA) remain functionally equivalent when the application circuit operates within the substitute's electrical limits.

Thermal and Compliance Requirements: The substitute must maintain the same operating temperature range (-55°C to 150°C), RoHS3 compliance, and MSL rating (1 - Unlimited) to ensure manufacturing and environmental compatibility.

Parameter Comparison

Engineering Selection Recommendations

NTJD4105CT1G is the manufacturer-recommended substitute for the FDG8842CZ. Both parts are manufactured by onsemi and share identical package specifications (6-TSSOP/SC-88/SOT-363), configuration (N and P-Channel), and logic level gate operation.

The NTJD4105CT1G maintains full compliance with RoHS3 and REACH requirements, matching the environmental and regulatory standards of the original part. Both devices operate across the identical temperature range (-55°C to 150°C), ensuring thermal compatibility in target applications.

The primary electrical difference is the reduced Vdss rating (20V/8V versus 30V/25V) in the substitute part. This substitution is valid for applications where the circuit operates within the NTJD4105CT1G's voltage envelope. The substitute provides comparable or superior on-resistance performance (375mOhm versus 400mOhm) and maintains the same gate threshold voltage specification (1.5V @ 250µA).

The NTJD4105CT1G is currently in active production status with confirmed inventory availability (35,400 pieces), providing supply chain continuity for the obsolete FDG8842CZ.

Frequently Asked Questions (FAQ)

Q: Can the NTJD4105CT1G directly replace the FDG8842CZ in all applications?

A: Direct substitution is valid only when the application circuit operates within the NTJD4105CT1G's electrical specifications. The substitute part has lower Vdss ratings (20V/8V versus 30V/25V). If the circuit applies voltages exceeding these limits, substitution is not appropriate. The identical package, configuration, and logic level gate operation ensure mechanical and functional compatibility for qualifying applications.

Q: What is the significance of the lower Vdss rating in the NTJD4105CT1G?

A: The Vdss (drain-to-source voltage) rating defines the maximum voltage the MOSFET can withstand between drain and source terminals. The NTJD4105CT1G's 20V/8V ratings are lower than the FDG8842CZ's 30V/25V ratings. Applications operating at voltages below these limits experience no functional impact. Applications requiring higher voltage ratings must retain the original part or identify alternative substitutes with matching voltage specifications.

Q: Are the package dimensions identical between these parts?

A: Both the FDG8842CZ and NTJD4105CT1G use the 6-TSSOP/SC-88/SOT-363 package specification. This ensures identical PCB footprints, land patterns, and assembly compatibility. No layout modifications are required for mechanical substitution.

Q: Do both parts support the same gate drive voltage?

A: Yes. Both parts specify identical gate threshold voltage (Vgs(th)) of 1.5V @ 250µA and are classified as logic level gate devices. Standard digital control signals (3.3V, 5V) operate both parts identically. No gate drive circuit modifications are necessary.

Q: What is the impact of the higher gate charge in the NTJD4105CT1G?

A: The NTJD4105CT1G specifies 3nC gate charge versus 1.44nC in the FDG8842CZ. Higher gate charge requires slightly more energy to switch the device but does not affect logic level gate compatibility. Applications with high-frequency switching or current-limited gate drive circuits should account for this parameter difference during circuit analysis.

Q: Are the compliance certifications equivalent?

A: Both parts are RoHS3 compliant, REACH unaffected, and carry MSL rating 1 (Unlimited). Regulatory and environmental compliance is identical, supporting equivalent use in manufacturing and supply chain processes.

Q: What is the current inventory status for substitution?

A: The FDG8842CZ is obsolete with 33,100 pieces in stock. The NTJD4105CT1G is active production status with 35,400 pieces available. The substitute provides long-term supply chain continuity for new designs and production requirements.