FDC6506P Equivalent & Substitute Parts

Part Overview

The FDC6506P is a dual P-channel MOSFET array manufactured by onsemi, rated for 30V drain-to-source voltage and 1.8A continuous drain current. The device is housed in a SuperSOT™-6 surface mount package and features logic level gate operation. The FDC6506P is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and ongoing production requirements. Substitute parts must maintain compatibility across electrical ratings, thermal characteristics, and package form factors while offering active product status and continued availability.

Key Parameters

Parameter	FDC6506P	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	1.8	A
Rds On (Max) @ Id, Vgs	170 @ 1.8A, 10V	mOhm
Vgs(th) (Max) @ Id	3 @ 250µA	V
Gate Charge (Qg) (Max) @ Vgs	3.5 @ 10V	nC
Input Capacitance (Ciss) (Max) @ Vds	190 @ 15V	pF
Power Dissipation (Max)	700	mW
Operating Temperature Range	-55 to 150	°C (TJ)
Configuration	2 P-Channel (Dual)	—
Package Type	SOT-23-6 Thin (SuperSOT™-6)	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitute parts for the FDC6506P are selected based on the following electrical and mechanical criteria:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 30V minimum
Continuous Drain Current (Id): 1.8A or greater
P-channel configuration
Surface mount package compatibility
Operating temperature range: -55°C to 150°C
RoHS3 compliance and MSL Level 1 rating

Grouping Logic:

Group 1 – Dual P-Channel Configuration (Direct Functional Equivalents): Parts maintaining the dual P-channel array configuration in compatible surface mount packages. These include PJS6809_S1_00001 (SOT-23-6, 2.6A, 30V) and NTHD4102PT1G (ChipFET™, 2.9A, 20V). These devices preserve the dual-channel architecture of the FDC6506P.

Group 2 – Single P-Channel Configuration (Functional Alternatives): Parts with single P-channel configuration but equivalent or superior electrical ratings. NTGS4111PT1G (6-TSOP, 2.6A, 30V) and ZXM62P03E6TA (SOT-26, 1.5A, 30V) provide alternative topologies for applications where dual-channel integration is not required.

All substitute parts meet or exceed the voltage and current ratings of the FDC6506P, maintain compatible operating temperature ranges, and carry active product status with established supply chain availability.

Parameter Comparison

Parameter	FDC6506P	NTGS4111PT1G	NTHD4102PT1G	PJS6809_S1_00001	ZXM62P03E6TA	Unit
Manufacturer	onsemi	onsemi	onsemi	Panjit International Inc.	Diodes Incorporated	—
Drain to Source Voltage (Vdss)	30	30	20	30	30	V
Continuous Drain Current (Id) @ 25°C	1.8	2.6	2.9	2.6	1.5	A
Rds On (Max) @ Id, Vgs	170 @ 1.8A, 10V	60 @ 3.7A, 10V	80 @ 2.9A, 4.5V	115 @ 2.6A, 10V	150 @ 1.6A, 10V	mOhm
Vgs(th) (Max) @ Id	3 @ 250µA	3 @ 250µA	1.5 @ 250µA	2.1 @ 250µA	1 @ 250µA	V
Gate Charge (Qg) (Max) @ Vgs	3.5 @ 10V	32 @ 10V	8.6 @ 4.5V	9.8 @ 10V	10.2 @ 10V	nC
Input Capacitance (Ciss) (Max) @ Vds	190 @ 15V	750 @ 15V	750 @ 16V	396 @ 15V	330 @ 25V	pF
Power Dissipation (Max)	700	630	1100	1250	625	mW
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	°C (TJ)
Configuration	2 P-Channel (Dual)	P-Channel (Single)	2 P-Channel (Dual)	2 P-Channel (Dual)	P-Channel (Single)	—
Package Type	SOT-23-6 Thin (SuperSOT™-6)	6-TSOP (SOT-23-6)	8-SMD, Flat Lead (ChipFET™)	SOT-23-6	SOT-26 (SOT-23-6)	—
Product Status	Obsolete	Active	Active	Active	Active	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	—

Engineering Selection Recommendations

PJS6809_S1_00001 (Panjit International Inc.)

This dual P-channel MOSFET array in SOT-23-6 package provides the closest functional equivalence to the FDC6506P. The device maintains 30V Vdss rating, exceeds the 1.8A current requirement with 2.6A continuous drain current, and preserves the dual-channel configuration. RoHS3 compliance and MSL Level 1 rating align with the original part specifications. Active product status ensures supply chain continuity. The SOT-23-6 package form factor enables direct PCB layout compatibility.

NTGS4111PT1G (onsemi)

This single P-channel device from the original manufacturer offers 30V Vdss and 2.6A continuous drain current with superior on-resistance characteristics (60mOhm). The 6-TSOP package maintains surface mount compatibility. Active product status and onsemi manufacturing heritage provide design confidence. Selection is appropriate for applications where dual-channel integration can be replaced with discrete single-channel topology or where improved thermal performance is beneficial.

NTHD4102PT1G (onsemi)

This dual P-channel ChipFET™ array provides 2.9A continuous drain current and enhanced power dissipation capability (1.1W). The 20V Vdss rating is lower than the FDC6506P; selection requires circuit verification that operating voltages do not exceed 20V. Active product status and onsemi manufacturing support ongoing availability. The ChipFET™ package offers improved thermal characteristics suitable for higher power applications.

ZXM62P03E6TA (Diodes Incorporated)

This single P-channel device maintains 30V Vdss rating with 1.5A continuous drain current, closely matching the FDC6506P current specification. The SOT-26 package provides surface mount compatibility. Active product status and established Diodes Incorporated supply chain support component availability. Selection is appropriate for applications where single-channel topology is acceptable and where the lower current rating aligns with circuit requirements.

Frequently Asked Questions (FAQ)

Q: Can the PJS6809_S1_00001 directly replace the FDC6506P in existing designs?

A: The PJS6809_S1_00001 maintains dual P-channel configuration, 30V Vdss rating, and SOT-23-6 package compatibility with the FDC6506P. Electrical parameters including gate threshold voltage, gate charge, and input capacitance are within acceptable ranges for most applications. PCB layout modifications are not required. Verification of on-resistance characteristics (115mOhm vs. 170mOhm) is recommended for power-sensitive applications.

Q: What is the primary difference between dual-channel and single-channel substitute options?

A: Dual-channel devices (PJS6809_S1_00001, NTHD4102PT1G) integrate two P-channel MOSFETs in a single package, matching the FDC6506P architecture. Single-channel devices (NTGS4111PT1G, ZXM62P03E6TA) provide one MOSFET per package. Dual-channel substitutes enable direct functional replacement without circuit topology changes. Single-channel substitutes require either dual-package implementation or circuit redesign for applications requiring two independent P-channel switches.

Q: Are all substitute parts RoHS3 compliant?

A: All listed substitute parts carry RoHS3 compliance certification and MSL Level 1 (Unlimited) moisture sensitivity rating, matching the FDC6506P environmental specifications. These certifications support deployment in regulated industries and long-term storage without desiccant requirements.

Q: What package considerations apply when selecting a substitute?

A: The FDC6506P uses SOT-23-6 Thin (SuperSOT™-6) package. PJS6809_S1_00001 uses standard SOT-23-6 package with compatible pinout and footprint. NTGS4111PT1G uses 6-TSOP package with different pinout; PCB layout modification is required. NTHD4102PT1G uses 8-SMD ChipFET™ package requiring new footprint design. ZXM62P03E6TA uses SOT-26 package with modified pinout. Package selection depends on PCB layout constraints and design flexibility.

Q: How do on-resistance (Rds On) differences affect circuit performance?

A: The FDC6506P specifies 170mOhm Rds On at 1.8A, 10V gate voltage. Substitute parts exhibit lower on-resistance values: PJS6809_S1_00001 (115mOhm), NTGS4111PT1G (60mOhm), NTHD4102PT1G (80mOhm), and ZXM62P03E6TA (150mOhm). Lower on-resistance reduces power dissipation and heat generation, improving efficiency. Applications with tight thermal budgets benefit from lower Rds On values. Conversely, circuits designed with the FDC6506P's higher on-resistance as a design parameter require verification when substituting lower-resistance devices.

Q: Why is the FDC6506P classified as obsolete?

A: Obsolete classification indicates onsemi has discontinued production and support for the FDC6506P. Existing inventory remains available through authorized distributors, but long-term supply cannot be guaranteed. Substitute parts with active product status ensure design continuity and support for new production runs and future product revisions.

Q: What is the significance of gate charge (Qg) differences among substitute parts?

A: Gate charge affects switching speed and gate driver power requirements. The FDC6506P specifies 3.5nC Qg at 10V, the lowest among all listed parts. Substitute parts exhibit higher gate charge: NTGS4111PT1G (32nC), NTHD4102PT1G (8.6nC), PJS6809_S1_00001 (9.8nC), and ZXM62P03E6TA (10.2nC). Higher gate charge requires increased gate driver current or extended switching times. Applications with high-frequency switching or limited gate driver capability require gate charge verification.

Q: Are substitute parts available in the same packaging options as the FDC6506P?

A: The FDC6506P is available in Cut Tape (CT) and Digi-Reel® packaging. PJS6809_S1_00001 is available in Tape & Reel (TR) packaging. NTGS4111PT1G, NTHD4102PT1G, and ZXM62P03E6TA are available in Cut Tape (CT) and Digi-Reel® or Tape & Reel (TR) options. Packaging selection depends on production volume and assembly process requirements. Consult distributor inventory for specific packaging availability.

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