FDC6322C Equivalent & Substitute Parts

Part Overview

The FDC6322C is an obsolete dual MOSFET array manufactured by onsemi, featuring integrated N-channel and P-channel MOSFETs in a SuperSOT-6 package. This component is designed for logic-level gate applications with a maximum drain-source voltage rating of 25V and combined power dissipation of 700mW. Due to its obsolete product status, equivalent substitute parts are necessary for new designs and ongoing production requirements. The FDC6322C remains available in inventory (3420 pieces), but long-term availability cannot be assured for obsolete components.

Substiute Parts

FDC6322C

onsemiIn Stock: 3495FDC6322C Datasheet

Current PartRFQ

NTZD3155CT1G

onsemiIn Stock: 38490NTZD3155CT1G Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDC6322C is determined by the following critical parameters:

Configuration Match: Both the main part and substitute must feature N-channel and P-channel MOSFET configuration to maintain functional equivalence in dual-gate applications.

Logic Level Gate Feature: The FET logic level gate characteristic must be preserved to ensure compatibility with standard digital control signals.

Operating Temperature Range: The substitute must support the full operating temperature range of -55°C to 150°C (TJ) to maintain performance across all environmental conditions.

Mounting Type and Surface Mount Compatibility: Both components must be surface-mount devices to ensure PCB assembly compatibility.

Voltage and Current Ratings: The substitute part must meet or exceed the drain-source voltage (Vdss) and continuous drain current (Id) specifications of the original component to ensure safe operation in the target application.

Regulatory Compliance: REACH status and ECCN classification must align to maintain compliance with applicable regulations.

The NTZD3155CT1G qualifies as a substitute based on matching configuration, logic level gate feature, operating temperature range, surface mount packaging, and regulatory compliance. However, the NTZD3155CT1G operates at a reduced maximum voltage (20V versus 25V) and reduced power dissipation (250mW versus 700mW), which may limit its application scope.

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The FDC6322C is classified as obsolete, while the NTZD3155CT1G is actively manufactured. Selection of the NTZD3155CT1G ensures access to a component with ongoing production support and long-term availability.

Compliance and Regulatory Alignment: Both components maintain identical REACH status (REACH Unaffected) and ECCN classification (EAR99), ensuring regulatory compliance is preserved during substitution.

Moisture Sensitivity: Both components share MSL rating 1 (Unlimited), indicating no moisture sensitivity constraints for storage or handling.

Application-Specific Constraints: The NTZD3155CT1G is suitable for applications where the following conditions are met:

• Maximum operating voltage does not exceed 20V (versus 25V for FDC6322C)
• Maximum power dissipation does not exceed 250mW (versus 700mW for FDC6322C)
• PCB layout accommodates SOT-563 or SOT-666 package footprints (versus SuperSOT-6 for FDC6322C)

Electrical Performance Trade-offs: The NTZD3155CT1G provides improved continuous drain current capability (540mA and 430mA versus 220mA and 460mA) and lower on-resistance (550mOhm versus 4Ohm), but exhibits higher gate charge (2.5nC versus 0.7nC) and significantly higher input capacitance (150pF versus 9.5pF). These characteristics may affect switching speed and gate drive requirements in high-frequency applications.

Frequently Asked Questions (FAQ)

Q: Can the NTZD3155CT1G directly replace the FDC6322C in all applications?

A: Direct replacement is limited by voltage and power rating differences. The NTZD3155CT1G operates at a maximum of 20V (versus 25V) and dissipates a maximum of 250mW (versus 700mW). Substitution is valid only for applications operating within these reduced specifications. Additionally, the different package footprint (SOT-563/SOT-666 versus SuperSOT-6) requires PCB layout modification.

Q: What are the key electrical differences between these components?

A: The NTZD3155CT1G provides higher continuous drain current (540mA and 430mA versus 220mA and 460mA) and lower on-resistance (550mOhm versus 4Ohm). However, it exhibits higher gate charge (2.5nC versus 0.7nC) and substantially higher input capacitance (150pF versus 9.5pF). These differences may impact switching characteristics and gate drive circuit design.

Q: Are there package compatibility concerns?

A: Yes. The FDC6322C uses SuperSOT-6 (SOT-23-6 Thin, TSOT-23-6) packaging, while the NTZD3155CT1G uses SOT-563 or SOT-666 packaging. Physical footprint differences require PCB redesign and re-qualification of the assembly process.

Q: Does the substitute part maintain the same operating temperature range?

A: Yes. Both components operate across the identical temperature range of -55°C to 150°C (TJ), ensuring thermal performance equivalence.

Q: Are regulatory and compliance certifications maintained?

A: Yes. Both components share identical REACH status (REACH Unaffected), ECCN classification (EAR99), and MSL rating (1 - Unlimited), ensuring regulatory compliance is preserved.

Q: Why is the FDC6322C obsolete if the NTZD3155CT1G is available?

A: The FDC6322C has been discontinued by the manufacturer. The NTZD3155CT1G represents an actively manufactured alternative from the same manufacturer (onsemi) with comparable functionality, though with reduced voltage and power ratings. Active production status ensures long-term availability and supply chain stability.

Q: What applications are suitable for the NTZD3155CT1G substitute?

A: The NTZD3155CT1G is suitable for logic-level gate MOSFET array applications operating at voltages up to 20V and power dissipation up to 250mW. Applications requiring higher voltage operation (>20V) or greater power dissipation (>250mW) must retain the FDC6322C or identify alternative components with higher ratings.