ES1DRX Equivalent & Substitute Parts

Part Overview

The ES1DRX is a general-purpose rectifier diode manufactured by Nexperia USA Inc., rated for 200 V DC reverse voltage and 1 A average rectified current in a surface-mount SOD-123W package. This component is classified as Obsolete, indicating it is no longer in active production. Locating equivalent substitute parts is necessary to support ongoing maintenance, repair, and legacy system requirements where the original part is unavailable through standard distribution channels.

Substiute Parts

ES1DRX
Nexperia USA Inc.In Stock: 1155ES1DRX Datasheet
ES1DRX
Current Part
UF1DLW RVG
Taiwan Semiconductor CorporationIn Stock: 8705UF1DLW RVG Datasheet
UF1DLW RVG
Similar
US1DFA
onsemiIn Stock: 3291US1DFA Datasheet
US1DFA
Similar

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 930 mV @ 1 A mV
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 25 ns
Current - Reverse Leakage @ Vr 200 nA @ 200 V nA
Package / Case SOD-123W
Operating Temperature - Junction -55 to 150 °C
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the ES1DRX are qualified based on the following electrical and mechanical parameters:

Primary Matching Criteria:

  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1 A
  • Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
  • Mounting Type: Surface Mount
  • Operating Temperature Range: -55°C to 150°C
  • RoHS3 Compliance

Secondary Compatibility Factors:

  • Package compatibility (SOD-123W or equivalent footprint)
  • Reverse recovery time (trr) within acceptable range for fast-recovery diode classification
  • Forward voltage (Vf) within typical tolerance for general-purpose rectifier applications
  • Reverse leakage current within acceptable limits for the application class

The substitute parts listed below meet these criteria and are electrically and mechanically compatible with the ES1DRX in standard rectifier circuit applications.

Parameter Comparison

Parameter ES1DRX (Nexperia) UF1DLW RVG (Taiwan Semiconductor) US1DFA (onsemi)
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 200 V
Current - Average Rectified (Io) 1 A 1 A 1 A
Voltage - Forward (Vf) (Max) @ If 930 mV @ 1 A 950 mV @ 1 A 950 mV @ 1 A
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 25 ns 20 ns 50 ns
Current - Reverse Leakage @ Vr 200 nA @ 200 V 1 µA @ 200 V 5 µA @ 200 V
Capacitance @ Vr, F 17 pF @ 4V, 1MHz 40 pF @ 4V, 1MHz 20 pF @ 4V, 1MHz
Package / Case SOD-123W SOD-123W SOD-123W
Operating Temperature - Junction -55 to 150°C -55 to 150°C -55 to 150°C
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Product Status Obsolete Discontinued at DiGi Electronics Not For New Designs

Engineering Selection Recommendations

UF1DLW RVG (Taiwan Semiconductor Corporation)

This substitute offers the closest electrical performance to the ES1DRX. It features a faster reverse recovery time (20 ns versus 25 ns), lower forward voltage drop (950 mV versus 930 mV), and maintains identical voltage and current ratings. The part is ROHS3 compliant and carries Discontinued at DiGi Electronics status. Inventory availability is higher (8679 pcs) compared to the original part. This substitute is suitable for direct replacement in existing designs where the ES1DRX is no longer available.

US1DFA (onsemi)

This substitute meets all primary electrical and mechanical criteria with identical voltage and current ratings. It carries a Not For New Designs status, indicating it remains available but is not recommended for new product development. The reverse recovery time is 50 ns, which is within the fast-recovery classification but slower than the ES1DRX. Forward voltage and reverse leakage characteristics are comparable to the UF1DLW RVG. This part is ROHS3 compliant and available in Tape & Reel packaging. Inventory availability is 3200 pcs.

Both substitutes are electrically and mechanically compatible with the ES1DRX and maintain compliance with applicable regulatory standards.

Frequently Asked Questions (FAQ)

Q: Can the UF1DLW RVG be used as a direct replacement for the ES1DRX?

A: Yes. Both parts share identical voltage (200 V), current (1 A), and temperature ratings, operate in the fast-recovery classification, and use the same SOD-123W package. The UF1DLW RVG exhibits slightly faster reverse recovery (20 ns) and marginally higher forward voltage (950 mV versus 930 mV), which are within acceptable tolerances for general-purpose rectifier applications.

Q: What is the difference between the US1DFA and UF1DLW RVG substitutes?

A: Both parts meet the ES1DRX electrical specifications. The UF1DLW RVG has a faster reverse recovery time (20 ns) compared to the US1DFA (50 ns). The US1DFA carries a Not For New Designs status, while the UF1DLW RVG is listed as Discontinued at DiGi Electronics. For legacy system support, either part is electrically compatible; selection depends on availability and inventory requirements.

Q: Are all three parts packaged identically?

A: The ES1DRX and UF1DLW RVG use SOD-123W packaging. The US1DFA uses a SOD-123FA supplier device package but maintains SOD-123W case compatibility, ensuring mechanical interchangeability in standard PCB layouts.

Q: Do these substitutes maintain RoHS compliance?

A: Yes. All three parts—ES1DRX, UF1DLW RVG, and US1DFA—are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements.

Q: Which substitute has the best availability?

A: The UF1DLW RVG has the highest inventory level at 8679 pcs, followed by the US1DFA at 3200 pcs. The original ES1DRX has 1052 pcs in stock but is classified as Obsolete.

Q: Can these parts be used interchangeably in high-frequency switching applications?

A: All three parts are classified as fast-recovery diodes with reverse recovery times between 20 ns and 50 ns. The UF1DLW RVG and ES1DRX offer faster recovery characteristics (20 ns and 25 ns respectively) compared to the US1DFA (50 ns). Selection should be based on specific circuit switching frequency requirements and reverse recovery time specifications for the application.

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