ES1DLHM2G Equivalent & Substitute Parts

Part Overview

The ES1DLHM2G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 200 V DC reverse voltage and 1 A average rectified current in a Sub SMA surface mount package. This component is classified as Active product status and meets AEC-Q101 automotive qualification standards. Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to inventory constraints, supply chain considerations, or design flexibility needs.

Key Parameters

Parameter	Value
Voltage - DC Reverse (Vr) (Max)	200 V
Current - Average Rectified (Io)	1 A
Voltage - Forward (Vf) (Max) @ If	950 mV @ 1 A
Reverse Recovery Time (trr)	35 ns
Current - Reverse Leakage @ Vr	5 µA @ 200 V
Capacitance @ Vr, F	10 pF @ 4 V, 1 MHz
Package / Case	DO-219AB
Mounting Type	Surface Mount
Operating Temperature - Junction	-55°C ~ 150°C
Grade	Automotive
Qualification	AEC-Q101
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the ES1DLHM2G are classified into two categories based on electrical and mechanical parameter alignment:

Parametric Equivalents maintain identical or functionally equivalent electrical specifications across all critical parameters: reverse voltage (200 V), average rectified current (1 A), forward voltage drop (950 mV @ 1 A), package type (DO-219AB Sub SMA), and operating temperature range (-55°C ~ 150°C). These parts are direct functional replacements.

Similar Parts share the same reverse voltage rating (200 V) and package form factor (DO-219AB) but differ in one or more electrical characteristics, including average rectified current rating (700 mA versus 1 A), forward voltage characteristics, or recovery time specifications. These parts are suitable for applications where the reduced current rating or alternative recovery characteristics are acceptable within circuit design margins.

The substitution logic is based strictly on the following key parameters:

Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1 A (parametric equivalents) or 700 mA (similar parts)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature Range: -55°C ~ 150°C

Parameter Comparison

Parameter	ES1DLHM2G	ES1DL	HS1DL RVG	S07D-GS08
Manufacturer	Taiwan Semiconductor Corporation	Taiwan Semiconductor Corporation	Taiwan Semiconductor Corporation	Vishay General Semiconductor - Diodes Division
Voltage - DC Reverse (Vr) (Max)	200 V	200 V	200 V	200 V
Current - Average Rectified (Io)	1 A	1 A	1 A	700 mA
Voltage - Forward (Vf) (Max) @ If	950 mV @ 1 A	950 mV @ 1 A	950 mV @ 1 A	1.1 V @ 1 A
Speed	Fast Recovery ≤ 500 ns, > 200 mA (Io)	Fast Recovery ≤ 500 ns, > 200 mA (Io)	Fast Recovery ≤ 500 ns, > 200 mA (Io)	Standard Recovery > 500 ns, > 200 mA (Io)
Reverse Recovery Time (trr)	35 ns	35 ns	50 ns	1.8 µs
Current - Reverse Leakage @ Vr	5 µA @ 200 V	5 µA @ 200 V	5 µA @ 200 V	10 µA @ 200 V
Capacitance @ Vr, F	10 pF @ 4 V, 1 MHz	10 pF @ 4 V, 1 MHz	20 pF @ 4 V, 1 MHz	4 pF @ 4 V, 1 MHz
Package / Case	DO-219AB	DO-219AB	DO-219AB	DO-219AB
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Operating Temperature - Junction	-55°C ~ 150°C	-55°C ~ 150°C	-55°C ~ 150°C	-55°C ~ 150°C
Grade	Automotive	Not specified	Not specified	Automotive
Qualification	AEC-Q101	Not specified	Not specified	AEC-Q101
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Active	Active	Active	Active

Engineering Selection Recommendations

ES1DL is a parametric equivalent to ES1DLHM2G. Both parts are manufactured by Taiwan Semiconductor Corporation with identical electrical specifications: 200 V reverse voltage, 1 A average rectified current, 950 mV forward voltage drop at 1 A, 35 ns reverse recovery time, and DO-219AB package. Both maintain ROHS3 compliance and -55°C to 150°C operating temperature range. The ES1DL differs only in packaging format (Cut Tape and Digi-Reel versus the main part's standard packaging) and does not carry explicit automotive grade or AEC-Q101 qualification designation in the provided data. Selection of ES1DL is appropriate for applications where packaging format flexibility is acceptable and automotive qualification is not a mandatory requirement.

HS1DL RVG is a parametric equivalent to ES1DLHM2G with the following considerations: manufactured by Taiwan Semiconductor Corporation, rated for 200 V reverse voltage and 1 A average rectified current in DO-219AB package. The HS1DL RVG exhibits a reverse recovery time of 50 ns (compared to 35 ns for ES1DLHM2G) and capacitance of 20 pF at 4 V, 1 MHz (compared to 10 pF). These differences represent acceptable variations within fast recovery diode specifications. The HS1DL RVG does not carry explicit automotive grade or AEC-Q101 qualification in the provided data. Selection is appropriate where the slightly extended recovery time and increased capacitance are compatible with circuit requirements and automotive qualification is not mandatory.

S07D-GS08 is a similar part manufactured by Vishay General Semiconductor - Diodes Division. This part shares the 200 V reverse voltage rating and DO-219AB package form factor with ES1DLHM2G but differs in average rectified current (700 mA versus 1 A), forward voltage drop (1.1 V @ 1 A versus 950 mV), recovery classification (Standard Recovery > 500 ns versus Fast Recovery ≤ 500 ns), reverse recovery time (1.8 µs versus 35 ns), and reverse leakage current (10 µA versus 5 µA). The S07D-GS08 carries Automotive grade and AEC-Q101 qualification. Selection of S07D-GS08 is appropriate only for applications where the reduced current rating (700 mA) is sufficient and the slower recovery characteristics are acceptable. This part is not suitable for circuits requiring the full 1 A current capacity or fast recovery performance of the ES1DLHM2G.

Frequently Asked Questions (FAQ)

Q: Can ES1DL be used as a direct replacement for ES1DLHM2G?

A: Yes. ES1DL is a parametric equivalent with identical electrical specifications: 200 V reverse voltage, 1 A average rectified current, 950 mV forward voltage drop at 1 A, 35 ns reverse recovery time, and DO-219AB package. Both operate across -55°C to 150°C and comply with ROHS3. The primary difference is packaging format. Automotive qualification status differs between the two parts as specified in the provided data.

Q: What are the key differences between HS1DL RVG and ES1DLHM2G?

A: HS1DL RVG maintains the same 200 V reverse voltage, 1 A average rectified current, 950 mV forward voltage drop, and DO-219AB package as ES1DLHM2G. The reverse recovery time is 50 ns (versus 35 ns) and capacitance is 20 pF at 4 V, 1 MHz (versus 10 pF). These represent acceptable variations within fast recovery diode performance. Automotive qualification status differs as specified in the provided data.

Q: Is S07D-GS08 a suitable replacement for ES1DLHM2G?

A: S07D-GS08 is a similar part with the same 200 V reverse voltage and DO-219AB package but is not a direct replacement. The average rectified current is rated at 700 mA (versus 1 A), forward voltage drop is 1.1 V @ 1 A (versus 950 mV), and recovery time is 1.8 µs (versus 35 ns). Selection of S07D-GS08 is appropriate only when the reduced current capacity and slower recovery characteristics are acceptable within circuit design parameters.

Q: Are all substitute parts automotive qualified?

A: No. ES1DLHM2G and S07D-GS08 carry Automotive grade and AEC-Q101 qualification. ES1DL and HS1DL RVG do not carry explicit automotive grade or AEC-Q101 qualification designation in the provided data. For applications requiring automotive qualification, ES1DLHM2G or S07D-GS08 are appropriate selections.

Q: What is the significance of reverse recovery time differences among these parts?

A: Reverse recovery time (trr) affects switching speed and electromagnetic interference characteristics. ES1DLHM2G and ES1DL both specify 35 ns, HS1DL RVG specifies 50 ns, and S07D-GS08 specifies 1.8 µs. Shorter recovery times reduce switching losses and EMI. Parts with longer recovery times (such as S07D-GS08) are classified as Standard Recovery and may not be suitable for high-frequency switching applications where ES1DLHM2G's Fast Recovery specification is required.

Q: Do all parts use the same package?

A: Yes. All listed parts use the DO-219AB package in surface mount configuration. This ensures mechanical and thermal compatibility on printed circuit boards. Packaging format differences (Cut Tape, Digi-Reel, Tape & Reel) relate to supply and handling methods, not physical component dimensions.

Q: What is the operating temperature range for these diodes?

A: All listed parts operate across a junction temperature range of -55°C to 150°C, ensuring compatibility across industrial and automotive temperature specifications.

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