ES1CHE3_A/I Equivalent & Substitute Parts

Part Overview

The ES1CHE3_A/I is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. This surface mount component operates at 150 V DC reverse voltage with 1 A average rectified current in a DO-214AC (SMA) package. The part is Active in product status and carries AEC-Q101 automotive qualification with ROHS3 compliance.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility are maintained across the specified parameter set. Alternative sources and packaging configurations may be required due to inventory availability, supply chain considerations, or specific application requirements.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	150	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	920	mV @ 1 A
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)	-
Reverse Recovery Time (trr)	25	ns
Current - Reverse Leakage @ Vr	5	µA @ 150 V
Capacitance @ Vr, F	10	pF @ 4V, 1MHz
Package / Case	DO-214AC, SMA	-
Operating Temperature - Junction	-55 to 150	°C
Grade	Automotive	-
Qualification	AEC-Q101	-
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitute parts are classified into two categories based on electrical and mechanical parameter alignment with the ES1CHE3_A/I:

Parametric Equivalents maintain identical or functionally equivalent electrical specifications across all critical parameters: reverse voltage (150 V), average rectified current (1 A), forward voltage (920 mV @ 1 A), reverse recovery time (25 ns), reverse leakage current (5 µA @ 150 V), and capacitance (10 pF @ 4V, 1MHz). These parts are interchangeable from an electrical standpoint and share the DO-214AC (SMA) package form factor.

Manufacturer Recommended Substitutes meet the core voltage and current requirements (150 V, 1 A) and package compatibility (DO-214AC/SMA) but may exhibit variations in secondary electrical characteristics such as forward voltage, reverse leakage current, or reverse recovery time. These parts are qualified for the same application class and temperature range.

Substitution eligibility is determined by:

Voltage - DC Reverse (Vr) (Max): 150 V minimum
Current - Average Rectified (Io): 1 A minimum
Package / Case: DO-214AC or SMA equivalent
Operating Temperature - Junction: -55°C to 150°C minimum range
RoHS Status: ROHS3 Compliant
Mounting Type: Surface Mount

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ 1A [mV]	trr [ns]	Ir @ 150V [µA]	C @ 4V, 1MHz [pF]	Package	Temp Range [°C]	Grade	Qualification
ES1CHE3_A/I	Vishay General Semiconductor	150	1	920	25	5	10	DO-214AC (SMA)	-55 to 150	Automotive	AEC-Q101
ES1C-E3/5AT	Vishay General Semiconductor	150	1	920	25	5	10	DO-214AC (SMA)	-55 to 150	-	-
ES1C-E3/61T	Vishay General Semiconductor	150	1	920	25	5	10	DO-214AC (SMA)	-55 to 150	-	-
ES1CHE3_A/H	Vishay General Semiconductor	150	1	920	25	5	10	DO-214AC (SMA)	-55 to 150	Automotive	AEC-Q101
SBR1U150SA-13	Diodes Incorporated	150	1	700	-	100	-	DO-214AC (SMA)	-65 to 150	Automotive	AEC-Q101
ES1C	Taiwan Semiconductor Corporation	150	1	950	35	5	16	DO-214AC (SMA)	-55 to 150	-	-
ES1C-13-F	Diodes Incorporated	150	1	920	25	5	10	DO-214AC (SMA)	-55 to 150	-	-

Engineering Selection Recommendations

Direct Electrical Equivalents (Parametric Match)

ES1C-E3/5AT, ES1C-E3/61T, ES1CHE3_A/H, and ES1C-13-F provide complete electrical parameter equivalence to the ES1CHE3_A/I. These parts maintain identical forward voltage (920 mV @ 1 A), reverse recovery time (25 ns), reverse leakage current (5 µA @ 150 V), and junction capacitance (10 pF @ 4V, 1MHz). All operate within the -55°C to 150°C temperature range. Selection among these equivalents is determined by packaging configuration (Tape & Reel vs. Cut Tape & Digi-Reel) and inventory availability.

ES1CHE3_A/H carries identical automotive grade and AEC-Q101 qualification as the main part, making it the preferred substitute for applications requiring maintained qualification status.

Alternative Technology Substitute (Manufacturer Recommended)

SBR1U150SA-13 from Diodes Incorporated employs Super Barrier technology and meets the core voltage (150 V) and current (1 A) requirements with DO-214AC (SMA) package compatibility. This part exhibits lower forward voltage (700 mV @ 1 A) compared to the standard technology ES1CHE3_A/I (920 mV @ 1 A), resulting in reduced power dissipation. However, reverse leakage current is higher (100 µA @ 150 V vs. 5 µA @ 150 V). The part carries automotive grade and AEC-Q101 qualification with an extended lower temperature limit (-65°C vs. -55°C). Selection of this substitute is appropriate when forward voltage reduction and thermal performance improvement are design priorities.

Secondary Equivalent (Parameter Variation)

ES1C from Taiwan Semiconductor Corporation maintains voltage and current ratings but exhibits measurable parameter variations: forward voltage of 950 mV @ 1 A (vs. 920 mV), reverse recovery time of 35 ns (vs. 25 ns), and junction capacitance of 16 pF @ 4V, 1MHz (vs. 10 pF). This part is suitable for applications where these parameter variations fall within design tolerance margins.

Frequently Asked Questions (FAQ)

Q: Can ES1C-E3/61T be used as a direct replacement for ES1CHE3_A/I?

A: Yes. ES1C-E3/61T is a parametric equivalent with identical electrical specifications: 150 V reverse voltage, 1 A average rectified current, 920 mV forward voltage @ 1 A, 25 ns reverse recovery time, 5 µA reverse leakage current @ 150 V, and 10 pF capacitance @ 4V, 1MHz. Both use DO-214AC (SMA) surface mount packaging and operate across -55°C to 150°C. The primary difference is packaging configuration (Tape & Reel for ES1C-E3/61T).

Q: What is the difference between ES1CHE3_A/I and SBR1U150SA-13?

A: Both parts meet 150 V reverse voltage and 1 A current requirements in DO-214AC (SMA) packages. SBR1U150SA-13 uses Super Barrier technology, resulting in lower forward voltage (700 mV vs. 920 mV @ 1 A) and reduced power dissipation. However, reverse leakage current is higher (100 µA vs. 5 µA @ 150 V). SBR1U150SA-13 extends the lower operating temperature to -65°C. Both carry automotive grade and AEC-Q101 qualification.

Q: Is ES1C from Taiwan Semiconductor Corporation compatible with ES1CHE3_A/I?

A: ES1C maintains the same voltage (150 V) and current (1 A) ratings and package form factor (DO-214AC/SMA). However, electrical parameters differ: forward voltage is 950 mV @ 1 A (vs. 920 mV), reverse recovery time is 35 ns (vs. 25 ns), and junction capacitance is 16 pF @ 4V, 1MHz (vs. 10 pF). Compatibility depends on whether these parameter variations are acceptable within the specific application design margins.

Q: What packaging options are available for substitutes?

A: Substitute parts are available in Tape & Reel (TR) and Cut Tape & Digi-Reel configurations. ES1C-E3/5AT and ES1C-13-F offer Cut Tape & Digi-Reel packaging. ES1C-E3/61T and ES1CHE3_A/H are supplied in Tape & Reel format. All maintain the DO-214AC (SMA) component package form factor for surface mount assembly.

Q: Do all substitute parts carry automotive qualification?

A: ES1CHE3_A/H and SBR1U150SA-13 carry automotive grade and AEC-Q101 qualification, matching the main part. ES1C-E3/5AT, ES1C-E3/61T, ES1C, and ES1C-13-F do not list automotive grade or AEC-Q101 qualification in their specifications. For applications requiring maintained automotive qualification status, ES1CHE3_A/H is the appropriate substitute.

Q: What is the significance of reverse recovery time in diode selection?

A: Reverse recovery time (trr) determines how quickly the diode transitions from forward conduction to reverse blocking. ES1CHE3_A/I, ES1C-E3/5AT, ES1C-E3/61T, ES1CHE3_A/H, and ES1C-13-F all specify 25 ns trr. ES1C specifies 35 ns. Lower reverse recovery time reduces switching losses and electromagnetic interference in high-frequency applications. Selection should verify that the specified trr meets circuit performance requirements.

Q: How does forward voltage affect component selection?

A: Forward voltage (Vf) determines power dissipation and voltage drop across the diode during conduction. ES1CHE3_A/I specifies 920 mV @ 1 A. SBR1U150SA-13 specifies 700 mV @ 1 A, resulting in lower power dissipation and reduced thermal load. ES1C specifies 950 mV @ 1 A. Selection should account for total circuit power budget and thermal management requirements.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts carry ROHS3 Compliant status, matching the main part ES1CHE3_A/I. All parts are also REACH Unaffected and classified under ECCN EAR99.

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