ES1C Equivalent & Substitute Parts

Part Overview

The ES1C is a general-purpose rectifier diode manufactured by onsemi, rated for 150 V DC reverse voltage and 1 A average rectified current in a DO-214AC (SMA) surface mount package. This part is classified as "Not For New Designs," indicating it has been superseded in the manufacturer's product portfolio. Identifying equivalent and substitute parts is necessary for ongoing production support, legacy system maintenance, and design flexibility when the primary part becomes unavailable or when alternative electrical characteristics better suit specific application requirements.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	150	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	920 mV @ 1 A	mV
Reverse Recovery Time (trr)	15	ns
Current - Reverse Leakage @ Vr	5	µA @ 150 V
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Package / Case	DO-214AC, SMA	—
Mounting Type	Surface Mount	—
Operating Temperature - Junction	-55°C to 150°C	°C
Technology	Standard	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the ES1C are grouped based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Electrical Compatibility Requirements:

Voltage - DC Reverse (Vr) rating must equal or exceed 150 V
Current - Average Rectified (Io) rating must equal or exceed 1 A
Forward voltage (Vf) characteristics must be compatible with circuit design tolerances
Reverse recovery time (trr) and speed classification determine switching performance suitability

Mechanical Compatibility Requirements:

Package / Case must be DO-214AC (SMA) or equivalent surface mount form factor
Mounting type must be Surface Mount
Supplier Device Package must support the same PCB footprint

Compliance Requirements:

RoHS3 Compliant status required
Moisture Sensitivity Level (MSL) of 1 (Unlimited) required

Substitute parts are organized into three categories:

Direct Equivalents: Parts with identical or near-identical electrical specifications and the same DO-214AC package, differing only in manufacturer or packaging format (Tape & Reel vs. Cut Tape).
Functional Equivalents with Enhanced Ratings: Parts meeting or exceeding all electrical requirements but with higher voltage or current ratings, suitable for applications requiring design margin.
Alternative Technology Parts: Parts using different semiconductor technology (Super Barrier vs. Standard) that meet electrical requirements but may exhibit different forward voltage or leakage characteristics.

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) [mV]	trr [ns]	Ir @ Vr [µA]	Speed	Package	Status
ES1C	onsemi	150	1	920 @ 1A	15	5 @ 150V	Fast Recovery ≤ 500ns	DO-214AC (SMA)	Not For New Designs
MURA115T3G	onsemi	150	1	875 @ 1A	35	2 @ 150V	Fast Recovery ≤ 500ns	DO-214AC (SMA)	Active
ES1C-E3/5AT	Vishay General Semiconductor - Diodes Division	150	1	920 @ 1A	25	5 @ 150V	Fast Recovery ≤ 500ns	DO-214AC (SMA)	Active
CMR1-02M BK PBFREE	Central Semiconductor Corp	200	1	1100 @ 1A	—	5 @ 200V	Standard Recovery >500ns	DO-214AC (SMA)	Active
CMR1-02M TR13 PBFREE	Central Semiconductor Corp	200	1	1100 @ 1A	—	5 @ 200V	Standard Recovery >500ns	DO-214AC (SMA)	Active
EGF1C-E3/5CA	Vishay General Semiconductor - Diodes Division	150	1	1000 @ 1A	50	5 @ 150V	Fast Recovery ≤ 500ns	DO-214BA (GF1)	Active
EGF1C-E3/67A	Vishay General Semiconductor - Diodes Division	150	1	1000 @ 1A	50	5 @ 150V	Fast Recovery ≤ 500ns	DO-214BA (GF1)	Active
ES1C-TP	Micro Commercial Co	150	1	—	50	5 @ 150V	Fast Recovery ≤ 500ns	DO-214AC (HSMA)	Active
ES1C_R1_00001	Panjit International Inc.	150	1	950 @ 1A	35	1 @ 150V	Fast Recovery ≤ 500ns	DO-214AC (SMA)	Active
SBR1U150SA-13	Diodes Incorporated	150	1	700 @ 1A	—	100 @ 150V	Fast Recovery ≤ 500ns	DO-214AC (SMA)	Active
SBR2U150SA-13	Diodes Incorporated	150	2	800 @ 2A	—	75 @ 150V	Standard Recovery >500ns	DO-214AC (SMA)	Active

Engineering Selection Recommendations

Direct Equivalents (Recommended for ES1C Replacement):

The ES1C-E3/5AT (Vishay General Semiconductor - Diodes Division) is the primary direct equivalent. It maintains identical voltage and current ratings (150 V, 1 A), equivalent forward voltage (920 mV @ 1 A), and the same DO-214AC package. This part is Active status and ROHS3 Compliant. The reverse recovery time of 25 ns is slightly longer than the ES1C (15 ns) but remains within fast recovery classification.

The MURA115T3G (onsemi) is an alternative direct equivalent from the original manufacturer. It provides identical voltage and current ratings with improved forward voltage (875 mV @ 1 A) and lower reverse leakage (2 µA @ 150 V). The reverse recovery time of 35 ns remains within fast recovery specification. This part is Active status.

The ES1C_R1_00001 (Panjit International Inc.) meets all electrical requirements with forward voltage of 950 mV @ 1 A and exceptionally low reverse leakage of 1 µA @ 150 V. This part is Active status and suitable for applications requiring minimal leakage current.

Functional Equivalents with Enhanced Ratings:

The CMR1-02M BK PBFREE and CMR1-02M TR13 PBFREE (Central Semiconductor Corp) provide higher voltage rating (200 V) while maintaining 1 A current rating. These parts are suitable for applications requiring additional voltage margin. Forward voltage is higher at 1100 mV @ 1 A, and speed classification is Standard Recovery (>500ns), which may not be suitable for high-frequency switching applications. Both are Active status.

The SBR2U150SA-13 (Diodes Incorporated) provides doubled current rating (2 A) at the same 150 V voltage. This part uses Super Barrier technology, resulting in significantly lower forward voltage (800 mV @ 2 A). Speed classification is Standard Recovery. This part is suitable for applications requiring higher current capacity.

Alternative Package Consideration:

The EGF1C-E3/5CA and EGF1C-E3/67A (Vishay General Semiconductor - Diodes Division) use DO-214BA (GF1) package instead of DO-214AC (SMA). These parts are not pin-compatible without PCB redesign. They are included for reference when package change is acceptable. Both are Active status with identical voltage and current ratings.

The ES1C-TP (Micro Commercial Co) uses DO-214AC (HSMA) variant package. Verify PCB footprint compatibility before selection.

Super Barrier Technology Alternative:

The SBR1U150SA-13 (Diodes Incorporated) uses Super Barrier technology with identical voltage and current ratings (150 V, 1 A). Forward voltage is significantly lower (700 mV @ 1 A), reducing power dissipation. Reverse leakage is higher (100 µA @ 150 V). This part is AEC-Q101 qualified and suitable for automotive applications. Active status.

Selection Criteria Summary:

For direct replacement with identical specifications: ES1C-E3/5AT or MURA115T3G
For lowest forward voltage: SBR1U150SA-13 (Super Barrier technology)
For lowest reverse leakage: ES1C_R1_00001
For higher voltage margin: CMR1-02M series
For higher current capacity: SBR2U150SA-13
All recommended substitutes are Active status and ROHS3 Compliant

Frequently Asked Questions (FAQ)

Q: Can I use MURA115T3G as a direct replacement for ES1C?

A: Yes. Both parts have identical voltage (150 V) and current (1 A) ratings, the same DO-214AC package, and Fast Recovery speed classification. The MURA115T3G is manufactured by onsemi (the original ES1C manufacturer) and is Active status. Forward voltage is slightly lower (875 mV vs. 920 mV), which is beneficial for power efficiency.

Q: What is the difference between ES1C-E3/5AT and ES1C-TP?

A: Both are ES1C variants with identical electrical ratings. ES1C-E3/5AT uses standard DO-214AC (SMA) package and is manufactured by Vishay. ES1C-TP uses DO-214AC (HSMA) variant package and is manufactured by Micro Commercial Co. Verify PCB footprint compatibility before selection, as HSMA may have different land pattern dimensions.

Q: Can I substitute SBR1U150SA-13 for ES1C?

A: Yes, with design considerations. Both parts have identical voltage (150 V) and current (1 A) ratings and DO-214AC package. SBR1U150SA-13 uses Super Barrier technology, resulting in significantly lower forward voltage (700 mV vs. 920 mV). This reduces power dissipation but increases reverse leakage (100 µA vs. 5 µA). Verify that the application circuit tolerates higher leakage current before substitution.

Q: Why would I choose CMR1-02M over ES1C?

A: CMR1-02M provides higher voltage rating (200 V vs. 150 V), offering additional design margin for overvoltage protection. However, forward voltage is higher (1100 mV vs. 920 mV), increasing power dissipation. Speed classification is Standard Recovery (>500ns) rather than Fast Recovery, making it unsuitable for high-frequency switching applications. Select CMR1-02M only when higher voltage rating is required.

Q: Is SBR2U150SA-13 a suitable substitute for ES1C?

A: SBR2U150SA-13 is not a direct substitute. While it maintains the 150 V voltage rating and DO-214AC package, it provides doubled current capacity (2 A vs. 1 A). Speed classification is Standard Recovery (>500ns) rather than Fast Recovery. Use SBR2U150SA-13 only when higher current capacity is required and the application circuit tolerates Standard Recovery speed.

Q: What does "Not For New Designs" mean for ES1C?

A: This designation indicates that onsemi has superseded the ES1C in their product portfolio. The part may still be available from inventory but is not recommended for new circuit designs. For new designs, select an Active status equivalent such as MURA115T3G, ES1C-E3/5AT, or SBR1U150SA-13.

Q: Are all substitute parts ROHS3 Compliant?

A: Yes. All substitute parts listed in this reference are ROHS3 Compliant and have Moisture Sensitivity Level (MSL) of 1 (Unlimited), matching the ES1C compliance profile.

Q: What is the difference between Cut Tape (CT) and Tape & Reel (TR) packaging?

A: Both are surface mount packaging formats. Cut Tape (CT) & Digi-Reel® is supplied in smaller quantities on cut tape reels, suitable for lower-volume production or prototyping. Tape & Reel (TR) is supplied in full reel quantities, suitable for high-volume automated assembly. Electrical specifications are identical; packaging format selection depends on production volume and assembly equipment.

Q: Can I use EGF1C-E3/5CA as a substitute for ES1C?

A: EGF1C-E3/5CA is not a direct substitute due to package difference. It uses DO-214BA (GF1) package instead of DO-214AC (SMA), requiring PCB redesign. Electrical ratings are identical (150 V, 1 A). Select EGF1C-E3/5CA only when package change is acceptable and PCB layout can be modified.

Q: Which substitute has the lowest reverse leakage current?

A: ES1C_R1_00001 (Panjit International Inc.) has the lowest reverse leakage at 1 µA @ 150 V, compared to 5 µA for ES1C. This part is suitable for applications requiring minimal leakage current, such as precision analog circuits or high-impedance measurement systems.

Q: What is Super Barrier technology?

A: Super Barrier is a semiconductor technology used in Schottky-type rectifier diodes that reduces forward voltage drop compared to standard junction diodes. SBR1U150SA-13 uses this technology, achieving 700 mV forward voltage versus 920 mV for standard ES1C. The trade-off is higher reverse leakage current (100 µA vs. 5 µA). Super Barrier diodes are beneficial in applications where power efficiency is critical.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message