ES1B R3G Equivalent & Substitute Parts

Part Overview

The ES1B R3G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 100 V DC reverse voltage and 1 A average rectified current in a DO-214AC (SMA) surface mount package. This part is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing production and repair applications. Equivalent parts maintain identical electrical and mechanical specifications, while substitute parts provide functional alternatives within the same application category with comparable performance characteristics.

Substiute Parts

ES1B R3G
Taiwan Semiconductor CorporationIn Stock: 770ES1B R3G Datasheet
ES1B R3G
Current Part
ES1B
YAGEOIn Stock: 65171ES1B Datasheet
ES1B
Parametric Equivalent
ES1BH
Taiwan Semiconductor CorporationIn Stock: 16126ES1BH Datasheet
ES1BH
Parametric Equivalent
CSFA102-G
Comchip TechnologyIn Stock: 801CSFA102-G Datasheet
CSFA102-G
Direct
ES1B-LTP
Micro Commercial CoIn Stock: 17292ES1B-LTP Datasheet
ES1B-LTP
Upgrade
CGRA4002-G
Comchip TechnologyIn Stock: 967CGRA4002-G Datasheet
CGRA4002-G
Similar
ES1B-13-F
Diodes IncorporatedIn Stock: 35153ES1B-13-F Datasheet
ES1B-13-F
Similar
ES1B-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 27131ES1B-E3/5AT Datasheet
ES1B-E3/5AT
Similar
ES1B-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 917ES1B-M3/5AT Datasheet
ES1B-M3/5AT
Similar
ES1B-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 762ES1B-M3/61T Datasheet
ES1B-M3/61T
Similar
ES1BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 7233ES1BHE3_A/H Datasheet
ES1BHE3_A/H
Similar
ES1BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 8375ES1BHE3_A/I Datasheet
ES1BHE3_A/I
Similar
ES2B-LTP
Micro Commercial CoIn Stock: 9518ES2B-LTP Datasheet
ES2B-LTP
Similar
ESH1B-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 920ESH1B-E3/5AT Datasheet
ESH1B-E3/5AT
Similar
ESH1B-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 10156ESH1B-E3/61T Datasheet
ESH1B-E3/61T
Similar
ESH1B-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 742ESH1B-M3/5AT Datasheet
ESH1B-M3/5AT
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ESH1B-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 844ESH1B-M3/61T Datasheet
ESH1B-M3/61T
Similar
GS1B-LTP
Micro Commercial CoIn Stock: 21523GS1B-LTP Datasheet
GS1B-LTP
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RS1B-13-F
Diodes IncorporatedIn Stock: 55344RS1B-13-F Datasheet
RS1B-13-F
Similar
RS1BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1121RS1BHE3_A/H Datasheet
RS1BHE3_A/H
Similar
RS1BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 795RS1BHE3_A/I Datasheet
RS1BHE3_A/I
Similar
S1B-13-F
Diodes IncorporatedIn Stock: 15133S1B-13-F Datasheet
S1B-13-F
Similar
S1BB-13-F
Diodes IncorporatedIn Stock: 26267S1BB-13-F Datasheet
S1BB-13-F
Similar
S1BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 21489S1BHE3_A/H Datasheet
S1BHE3_A/H
Similar
S1BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 748S1BHE3_A/I Datasheet
S1BHE3_A/I
Similar
UH1BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1111UH1BHE3_A/H Datasheet
UH1BHE3_A/H
Similar
UH1BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 732UH1BHE3_A/I Datasheet
UH1BHE3_A/I
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US1B-13-F
Diodes IncorporatedIn Stock: 142770US1B-13-F Datasheet
US1B-13-F
Similar
US1B-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1024US1B-M3/5AT Datasheet
US1B-M3/5AT
Similar
US1B-TP
Micro Commercial CoIn Stock: 56481US1B-TP Datasheet
US1B-TP
Similar
VS-1EMH01-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 25289VS-1EMH01-M3/5AT Datasheet
VS-1EMH01-M3/5AT
Similar
VS-2EMH01-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 23285VS-2EMH01-M3/5AT Datasheet
VS-2EMH01-M3/5AT
Similar
ES1B
YAGEOIn Stock: 65171ES1B Datasheet
ES1B
Parametric Equivalent
ES1B_R1_00001
Panjit International Inc.In Stock: 269138ES1B_R1_00001 Datasheet
ES1B_R1_00001
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 950 mV @ 1 A mV
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns
Current - Reverse Leakage @ Vr 5 µA @ 100 V
Capacitance @ Vr, F 16 pF @ 4V, 1MHz
Package / Case DO-214AC, SMA
Operating Temperature - Junction -55 to 150 °C
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the ES1B R3G is determined by the following critical parameters:

Mandatory Matching Parameters:

  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1 A
  • Package / Case: DO-214AC, SMA
  • Mounting Type: Surface Mount
  • Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)

Allowable Variation Parameters:

  • Voltage - Forward (Vf) (Max) @ If: 920 mV to 1.1 V @ 1 A
  • Capacitance @ Vr, F: 10 pF to 16 pF @ 4V, 1MHz
  • Operating Temperature - Junction: -55°C to 175°C (minimum -55°C required)

Substitute parts are grouped by equivalence level: parametric equivalents maintain all specifications within tolerance, direct manufacturers provide identical electrical performance, upgrades offer extended temperature ranges or improved characteristics, and similar parts provide functional compatibility with minor parameter variations.

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ 1A [mV] trr [ns] Ir @ Vr [µA] Capacitance [pF] Tj (°C) Product Status
ES1B R3G Taiwan Semiconductor Corporation 100 1 950 35 5 @ 100V 16 @ 4V, 1MHz -55 to 150 Discontinued
ES1B YAGEO 100 1 950 Active
ES1BH Taiwan Semiconductor Corporation 100 1 950 35 5 @ 100V 16 @ 4V, 1MHz -55 to 150 Active
CSFA102-G Comchip Technology 100 1 950 35 5 @ 100V -55 to 150 Active
ES1B-LTP Micro Commercial Co 100 1 950 35 5 @ 100V 15 @ 4V, 1MHz -65 to 175 Not For New Designs
CGRA4002-G Comchip Technology 100 1 1100 5 @ 100V -55 to 150 Active
ES1B-13-F Diodes Incorporated 100 1 920 25 5 @ 100V 10 @ 4V, 1MHz -55 to 150 Active
ES1B-E3/5AT Vishay General Semiconductor - Diodes Division 100 1 920 25 5 @ 100V 10 @ 4V, 1MHz -55 to 150 Active
ES1B-M3/5AT Vishay General Semiconductor - Diodes Division 100 1 920 25 5 @ 100V 10 @ 4V, 1MHz -55 to 150 Active
ES1B-M3/61T Vishay General Semiconductor - Diodes Division 100 1 920 25 5 @ 100V 10 @ 4V, 1MHz -55 to 150 Active
ES1BHE3_A/H Vishay General Semiconductor - Diodes Division 100 1 920 25 5 @ 100V 10 @ 4V, 1MHz -55 to 150 Active

Engineering Selection Recommendations

Parametric Equivalents (Identical Specifications):

The ES1B from YAGEO and ES1BH from Taiwan Semiconductor Corporation are parametric equivalents with full specification alignment to the ES1B R3G. Both maintain 100 V reverse voltage, 1 A rectified current, and 950 mV forward voltage at 1 A. ES1BH is available in active status with automotive-grade qualification (AEC-Q101), providing enhanced reliability for automotive applications. Both parts are ROHS3 compliant with MSL 1 rating.

Direct Manufacturer Equivalent (Identical Electrical Performance):

CSFA102-G from Comchip Technology provides direct electrical equivalence with 100 V, 1 A, and 950 mV forward voltage specifications. This part maintains fast recovery characteristics and 35 ns reverse recovery time. Product status is active with full ROHS3 compliance.

Upgrade Option (Extended Temperature Range):

ES1B-LTP from Micro Commercial Co extends the operating temperature range to -65°C to 175°C while maintaining all core electrical specifications. This part is designated "Not For New Designs" but remains available for legacy system support. The extended temperature capability accommodates more demanding thermal environments.

Active Alternatives (Minor Parameter Variations):

Parts from Vishay General Semiconductor (ES1B-E3/5AT, ES1B-M3/5AT, ES1B-M3/61T, ES1BHE3_A/H) and Diodes Incorporated (ES1B-13-F) provide functional compatibility with improved forward voltage characteristics (920 mV vs. 950 mV) and reduced reverse recovery time (25 ns vs. 35 ns). These improvements result in lower power dissipation and faster switching performance. All maintain 100 V, 1 A ratings and are ROHS3 compliant with active product status.

CGRA4002-G from Comchip Technology is functionally compatible with slightly elevated forward voltage (1.1 V @ 1 A) and is suitable for applications where this parameter variation is acceptable.

Packaging Considerations:

Substitute parts are available in Cut Tape (CT) & Digi-Reel® or Tape & Reel (TR) packaging formats. Selection depends on production volume and assembly process requirements. All parts maintain the DO-214AC (SMA) surface mount package footprint.

Frequently Asked Questions (FAQ)

Q: Can ES1BH be used as a direct replacement for ES1B R3G?

A: Yes. ES1BH from Taiwan Semiconductor Corporation maintains identical electrical specifications: 100 V reverse voltage, 1 A rectified current, 950 mV forward voltage at 1 A, and 35 ns reverse recovery time. Both are ROHS3 compliant with MSL 1 rating. ES1BH is available in active status with automotive-grade qualification (AEC-Q101).

Q: What is the difference between ES1B-E3/5AT and ES1B R3G?

A: ES1B-E3/5AT from Vishay provides improved electrical performance with lower forward voltage (920 mV vs. 950 mV @ 1 A) and faster reverse recovery time (25 ns vs. 35 ns). Both maintain 100 V reverse voltage and 1 A rectified current. The lower forward voltage reduces power dissipation. ES1B-E3/5AT is available in active status.

Q: Is CGRA4002-G compatible with ES1B R3G?

A: CGRA4002-G from Comchip Technology is functionally compatible with the same 100 V, 1 A ratings and fast recovery characteristics. The forward voltage is slightly higher at 1.1 V versus 950 mV. This part is suitable for applications where the forward voltage variation is acceptable. Product status is active.

Q: What packaging options are available for substitute parts?

A: Substitute parts are supplied in Cut Tape (CT) & Digi-Reel® or Tape & Reel (TR) formats. All maintain the DO-214AC (SMA) surface mount package footprint, ensuring mechanical compatibility with existing PCB designs. Selection depends on production volume and assembly automation requirements.

Q: Why do some substitute parts have lower reverse recovery time?

A: Parts such as ES1B-13-F and ES1B-E3/5AT feature 25 ns reverse recovery time compared to 35 ns in the ES1B R3G. This represents improved switching performance and reduced power dissipation during reverse recovery. Both specifications are within the fast recovery classification (≤ 500 ns, > 200 mA).

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All listed substitute parts maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, matching the environmental and regulatory requirements of the ES1B R3G.

Q: What is the significance of AEC-Q101 qualification on ES1BH?

A: AEC-Q101 qualification indicates automotive-grade reliability testing and qualification. ES1BH from Taiwan Semiconductor Corporation carries this certification, making it suitable for automotive applications requiring enhanced reliability standards. The ES1B R3G does not carry this designation.

Q: Can ES1B-LTP be used for new designs?

A: ES1B-LTP is designated "Not For New Designs" by the manufacturer. While electrically compatible with extended temperature range (-65°C to 175°C), this part should be reserved for legacy system support and maintenance. Active alternatives such as ES1BH or Vishay parts are recommended for new designs.

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