ES1BE-TP Equivalent & Substitute Parts

Part Overview

The ES1BE-TP is a general-purpose rectifier diode manufactured by Micro Commercial Co, rated for 100 V DC reverse voltage and 1 A average rectified current in a DO-214AC (SMA) surface mount package. This part is classified as Obsolete, which necessitates identification of equivalent and substitute components for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating available packaging and product status options.

Substiute Parts

ES1BE-TP
Micro Commercial CoIn Stock: 841ES1BE-TP Datasheet
ES1BE-TP
Current Part
ES1B-LTP
Micro Commercial CoIn Stock: 17292ES1B-LTP Datasheet
ES1B-LTP
Direct
CGRA4002-G
Comchip TechnologyIn Stock: 967CGRA4002-G Datasheet
CGRA4002-G
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EGF1B
Fairchild SemiconductorIn Stock: 4165EGF1B Datasheet
EGF1B
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EGF1B-E3/5CA
Vishay General Semiconductor - Diodes DivisionIn Stock: 15362EGF1B-E3/5CA Datasheet
EGF1B-E3/5CA
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EGF1B-E3/67A
Vishay General Semiconductor - Diodes DivisionIn Stock: 30297EGF1B-E3/67A Datasheet
EGF1B-E3/67A
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ES1B
YAGEOIn Stock: 65171ES1B Datasheet
ES1B
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ES1B-13-F
Diodes IncorporatedIn Stock: 35153ES1B-13-F Datasheet
ES1B-13-F
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ES1B-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 27131ES1B-E3/5AT Datasheet
ES1B-E3/5AT
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ES1B-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 70592ES1B-E3/61T Datasheet
ES1B-E3/61T
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ESH1B-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 920ESH1B-E3/5AT Datasheet
ESH1B-E3/5AT
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ESH1B-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 10156ESH1B-E3/61T Datasheet
ESH1B-E3/61T
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ESH1BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 775ESH1BHE3_A/H Datasheet
ESH1BHE3_A/H
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ESH1BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 978ESH1BHE3_A/I Datasheet
ESH1BHE3_A/I
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ESH2BA
Taiwan Semiconductor CorporationIn Stock: 16008ESH2BA Datasheet
ESH2BA
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GF1B
onsemiIn Stock: 1396GF1B Datasheet
GF1B
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GF1B-E3/5CA
Vishay General Semiconductor - Diodes DivisionIn Stock: 15404GF1B-E3/5CA Datasheet
GF1B-E3/5CA
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GF1B-E3/67A
Vishay General Semiconductor - Diodes DivisionIn Stock: 50211GF1B-E3/67A Datasheet
GF1B-E3/67A
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RS1B-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 835RS1B-M3/5AT Datasheet
RS1B-M3/5AT
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RS1B-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 894RS1B-M3/61T Datasheet
RS1B-M3/61T
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RS1BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1121RS1BHE3_A/H Datasheet
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RS1BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 795RS1BHE3_A/I Datasheet
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S1B
YAGEOIn Stock: 4761S1B Datasheet
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S1B-13-F
Diodes IncorporatedIn Stock: 15133S1B-13-F Datasheet
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S1B-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1090S1B-M3/5AT Datasheet
S1B-M3/5AT
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S1B-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 16976S1B-M3/61T Datasheet
S1B-M3/61T
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S1BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 748S1BHE3_A/I Datasheet
S1BHE3_A/I
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U1B-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 850U1B-M3/5AT Datasheet
U1B-M3/5AT
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U1B-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 1084U1B-M3/61T Datasheet
U1B-M3/61T
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US1B-13-F
Diodes IncorporatedIn Stock: 142770US1B-13-F Datasheet
US1B-13-F
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US1B-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 6838US1B-E3/5AT Datasheet
US1B-E3/5AT
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US1B-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 13902US1B-M3/61T Datasheet
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Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 975 mV @ 1 A mV
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 100 V
Mounting Type Surface Mount
Package / Case DO-214AC, SMA
Operating Temperature - Junction -50 to 150 °C
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the ES1BE-TP is determined by strict equivalence across the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1 A
  • Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC or DO-214BA (both SMA-compatible footprints)

Secondary Compatibility Factors:

  • Voltage - Forward (Vf) (Max) @ If: Must not exceed 1.1 V @ 1 A
  • Reverse Recovery Time (trr): 25 ns to 50 ns acceptable
  • Current - Reverse Leakage @ Vr: 1 µA to 10 µA @ 100 V acceptable
  • Operating Temperature - Junction: Minimum -55°C to maximum 150°C or higher
  • RoHS3 Compliance and MSL 1 rating required

Substitute parts are grouped into two categories: Direct Micro Commercial Co variants and cross-manufacturer equivalents from Vishay, Fairchild, Comchip, and Diodes Incorporated. All listed substitutes meet the core electrical specifications and regulatory requirements.

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ 1A [mV] trr [ns] Ir @ Vr [µA] Package Tj Range [°C] Product Status
ES1BE-TP Micro Commercial Co 100 1 975 50 5 DO-214AC -50 to 150 Obsolete
ES1B-LTP Micro Commercial Co 100 1 950 35 5 DO-214AC -65 to 175 Not For New Designs
CGRA4002-G Comchip Technology 100 1 1100 5 DO-214AC -55 to 150 Active
EGF1B Fairchild Semiconductor 100 1 1000 50 10 DO-214AC -65 to 175 Active
EGF1B-E3/5CA Vishay General Semiconductor 100 1 1000 50 5 DO-214BA -65 to 175 Active
EGF1B-E3/67A Vishay General Semiconductor 100 1 1000 50 5 DO-214BA -65 to 175 Not For New Designs
ES1B YAGEO 100 1 950 DO-214AC Active
ES1B-13-F Diodes Incorporated 100 1 920 25 5 DO-214AC -55 to 150 Active
ES1B-E3/5AT Vishay General Semiconductor 100 1 920 25 5 DO-214AC -55 to 150 Active
ES1B-E3/61T Vishay General Semiconductor 100 1 920 25 5 DO-214AC -55 to 150 Active
ESH1B-E3/5AT Vishay General Semiconductor 100 1 900 25 1 DO-214AC -55 to 175 Active

Engineering Selection Recommendations

For Obsolete Part Replacement (ES1BE-TP):

The ES1BE-TP is classified as Obsolete. Direct replacement within the Micro Commercial Co product line is available through ES1B-LTP, which maintains identical electrical specifications (100 V, 1 A, fast recovery) with improved reverse recovery time (35 ns vs. 50 ns) and extended operating temperature range (-65°C to 175°C vs. -50°C to 150°C). ES1B-LTP is classified as Not For New Designs but remains available for legacy system support.

For New Design Implementation:

Active product status alternatives include:

  • ES1B-13-F (Diodes Incorporated): Maintains DO-214AC package compatibility with reduced forward voltage (920 mV vs. 975 mV) and faster recovery time (25 ns). Operating temperature range -55°C to 150°C matches the original specification envelope.

  • ES1B-E3/5AT and ES1B-E3/61T (Vishay General Semiconductor): Both offer identical electrical performance to ES1B-13-F with active product status and extended availability. Packaging is Cut Tape (CT) & Digi-Reel or standard tape formats.

  • ESH1B-E3/5AT (Vishay General Semiconductor): Provides superior reverse leakage performance (1 µA vs. 5 µA) with lowest forward voltage (900 mV) and extended temperature range (-55°C to 175°C). Suitable for applications requiring enhanced leakage specifications.

  • EGF1B-E3/5CA (Vishay General Semiconductor): Cross-manufacturer option using DO-214BA package (GF1 footprint) with active status. Electrically equivalent with extended temperature range and established supply chain.

For Cost-Optimized Selection:

CGRA4002-G (Comchip Technology) provides active product status with standard electrical specifications at competitive pricing. Forward voltage specification (1.1 V maximum) remains within acceptable tolerance for general-purpose rectification applications.

All recommended substitutes maintain RoHS3 compliance and MSL 1 rating. Package compatibility (DO-214AC vs. DO-214BA) must be verified against PCB layout constraints.

Frequently Asked Questions (FAQ)

Q: Can ES1B-LTP directly replace ES1BE-TP in existing designs?

A: Yes. ES1B-LTP is electrically equivalent with identical voltage (100 V) and current (1 A) ratings. The primary differences are improved reverse recovery time (35 ns vs. 50 ns) and extended operating temperature range (-65°C to 175°C vs. -50°C to 150°C). Both use DO-214AC packaging. ES1B-LTP is classified as Not For New Designs but is suitable for legacy system support.

Q: What is the difference between DO-214AC and DO-214BA packages?

A: Both packages are surface mount rectifier packages with identical electrical performance and similar footprints. DO-214AC (SMA) and DO-214BA (GF1) are mechanically and electrically interchangeable for this application class. PCB layout compatibility must be confirmed with design documentation.

Q: Which substitute offers the lowest forward voltage drop?

A: ESH1B-E3/5AT provides the lowest forward voltage at 900 mV @ 1 A, compared to 975 mV for the original ES1BE-TP. This represents a 75 mV reduction, which may reduce power dissipation in high-current applications. ESH1B-E3/5AT also features the lowest reverse leakage current (1 µA vs. 5 µA).

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts are RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating, matching the original ES1BE-TP specification.

Q: What is the difference between Cut Tape (CT) and Tape & Reel (TR) packaging?

A: Cut Tape (CT) and Tape & Reel (TR) refer to supply formats, not component specifications. Both formats contain identical components. Tape & Reel is suitable for automated assembly lines, while Cut Tape is used for manual or lower-volume applications. Electrical and thermal performance is identical.

Q: Can CGRA4002-G be used as a direct substitute despite higher forward voltage?

A: CGRA4002-G (1.1 V forward voltage) is electrically compatible for general-purpose rectification applications where the additional 125 mV forward voltage drop is acceptable. Applications sensitive to power dissipation or voltage regulation should use lower forward voltage alternatives such as ES1B-13-F (920 mV) or ESH1B-E3/5AT (900 mV).

Q: Which substitute has the fastest reverse recovery time?

A: ES1B-13-F, ES1B-E3/5AT, ES1B-E3/61T, and ESH1B-E3/5AT all feature 25 ns reverse recovery time, compared to 50 ns for the original ES1BE-TP. Faster recovery reduces switching losses in high-frequency applications.

Q: Is extended operating temperature range important for my application?

A: Extended temperature range (-65°C to 175°C) provided by EGF1B, EGF1B-E3/5CA, EGF1B-E3/67A, and ESH1B-E3/5AT is beneficial for industrial, automotive, or aerospace applications. Standard range (-55°C to 150°C) is sufficient for consumer and commercial electronics. Verify application requirements against thermal specifications.

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