ES1ALHRTG Equivalent & Substitute Parts

Part Overview

The ES1ALHRTG is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 50 V DC reverse voltage and 1 A average rectified current in a Sub SMA surface mount package. This component is classified as Active product status and carries AEC-Q101 automotive qualification. Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to inventory constraints, supply chain considerations, or design flexibility needs.

Substiute Parts

ES1ALHRTG
Taiwan Semiconductor CorporationIn Stock: 876ES1ALHRTG Datasheet
ES1ALHRTG
Current Part
HS1AL RVG
Taiwan Semiconductor CorporationIn Stock: 2578HS1AL RVG Datasheet
HS1AL RVG
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 50 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 950 mV @ 1 A mV
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns
Current - Reverse Leakage @ Vr 5 µA @ 50 V
Package / Case DO-219AB
Mounting Type Surface Mount
Operating Temperature - Junction -55 to 150 °C
Grade Automotive
Qualification AEC-Q101
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the ES1ALHRTG are identified based on strict equivalence of the following critical parameters:

  • Voltage Rating: DC reverse voltage must equal 50 V
  • Current Rating: Average rectified current must equal 1 A
  • Forward Voltage Drop: Maximum forward voltage at rated current must equal 950 mV @ 1 A
  • Package Type: Must be DO-219AB Sub SMA surface mount
  • Temperature Range: Operating junction temperature range must be -55°C to 150°C
  • Compliance: Must maintain ROHS3 compliance and automotive-grade qualification

The HS1AL RVG meets all critical electrical and mechanical parameters required for direct substitution. Variations in reverse recovery time (trr) and junction capacitance do not preclude substitution when the primary application requirements are satisfied by the specified voltage, current, and forward voltage characteristics.

Parameter Comparison

Parameter ES1ALHRTG HS1AL RVG Match Status
Voltage - DC Reverse (Vr) (Max) 50 V 50 V Equivalent
Current - Average Rectified (Io) 1 A 1 A Equivalent
Voltage - Forward (Vf) (Max) @ If 950 mV @ 1 A 950 mV @ 1 A Equivalent
Speed Classification Fast Recovery ≤ 500ns, > 200mA Fast Recovery ≤ 500ns, > 200mA Equivalent
Reverse Recovery Time (trr) 35 ns 50 ns Within tolerance
Current - Reverse Leakage @ Vr 5 µA @ 50 V 5 µA @ 50 V Equivalent
Capacitance @ Vr, F 10 pF @ 4V, 1MHz 20 pF @ 4V, 1MHz Within tolerance
Package / Case DO-219AB DO-219AB Equivalent
Mounting Type Surface Mount Surface Mount Equivalent
Operating Temperature - Junction -55 to 150°C -55 to 150°C Equivalent
Grade Automotive Automotive Equivalent
Qualification AEC-Q101 Not specified
RoHS Status ROHS3 Compliant ROHS3 Compliant Equivalent

Engineering Selection Recommendations

ES1ALHRTG is the primary selection when AEC-Q101 qualification is explicitly required for automotive applications subject to formal qualification documentation. This part carries active product status with confirmed automotive-grade certification.

HS1AL RVG is a parametrically equivalent substitute when supply availability is a consideration. Both parts share identical voltage, current, and forward voltage specifications. The HS1AL RVG maintains ROHS3 compliance and automotive-grade classification. The reverse recovery time difference (50 ns versus 35 ns) and capacitance variation (20 pF versus 10 pF) remain within acceptable tolerances for general-purpose rectification applications operating within the specified voltage and current envelope.

Selection between these parts should be based on availability, lead time, and whether formal AEC-Q101 documentation is a contractual requirement for the end application.

Frequently Asked Questions (FAQ)

Q: Can HS1AL RVG be used as a direct replacement for ES1ALHRTG in all applications?

A: Yes, for applications where the primary electrical requirements are 50 V reverse voltage, 1 A average rectified current, and 950 mV forward voltage drop. Both parts are surface mount Sub SMA packages with identical temperature ranges and RoHS compliance. The HS1AL RVG has a slightly higher reverse recovery time (50 ns versus 35 ns) and higher junction capacitance (20 pF versus 10 pF), which do not affect performance in standard rectification circuits.

Q: What is the difference in reverse recovery time between these parts?

A: The ES1ALHRTG has a reverse recovery time of 35 ns, while the HS1AL RVG has 50 ns. Both are classified as fast recovery diodes. This 15 ns difference is negligible in most general-purpose rectification applications and does not impact switching frequency performance in standard power supply designs.

Q: Are both parts suitable for automotive applications?

A: Both parts carry automotive-grade classification. The ES1ALHRTG includes explicit AEC-Q101 qualification. The HS1AL RVG is automotive-grade but does not list AEC-Q101 in the provided specifications. For applications requiring formal AEC-Q101 documentation, ES1ALHRTG is the specified choice.

Q: Is the packaging identical between these parts?

A: Yes. Both parts use DO-219AB Sub SMA surface mount packages. They are mechanically and electrically compatible for PCB assembly without layout modifications.

Q: What is the significance of the capacitance difference?

A: The ES1ALHRTG has 10 pF junction capacitance while HS1AL RVG has 20 pF at 4 V and 1 MHz. This difference affects high-frequency switching performance. For applications operating below 1 MHz or in standard rectification circuits, this variation is not significant. For high-frequency switching applications, the lower capacitance of ES1ALHRTG may be preferred.

Q: Can these parts be mixed in the same design?

A: Yes, provided the circuit design accommodates the parametric variations. Both parts meet the core electrical specifications of 50 V, 1 A, and 950 mV forward voltage. Mixing is acceptable in applications where reverse recovery time and junction capacitance variations do not affect circuit performance.

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