ER1M Equivalent & Substitute Parts

Part Overview

The ER1M is a 1000 V, 1 A surface mount rectifier diode manufactured by Diotec Semiconductor in the DO-214AC (SMA) package. This superfast recovery diode features a reverse recovery time of 75 nanoseconds and is designed for general-purpose rectification applications requiring fast switching performance. The part is currently active in production with 986 pieces in stock. Equivalent and substitute parts are identified to support procurement flexibility, inventory management, and design alternatives where parametric compatibility permits direct substitution.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	1000	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	1.7 @ 1	V @ A
Reverse Recovery Time (trr)	75	ns
Current - Reverse Leakage @ Vr	5	µA @ 1000 V
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Package / Case	DO-214AC, SMA	—
Mounting Type	Surface Mount	—
Operating Temperature - Junction	-50 to 150	°C

Substitute Part Grouping Explanation

Substitute parts for the ER1M are classified into two categories based on parametric alignment:

Parametric Equivalents share identical electrical specifications across all critical parameters: reverse voltage (1000 V), average rectified current (1 A), forward voltage (1.7 V @ 1 A), reverse recovery time (75 ns), and reverse leakage current (5 µA @ 1000 V). These parts are direct functional replacements with no performance trade-offs.

Similar Parts maintain compatibility in reverse voltage, average rectified current, and package form factor but differ in one or more secondary parameters such as forward voltage, reverse recovery time, reverse leakage current, or operating temperature range. These parts are suitable for substitution when the application tolerates the specified parameter variations.

The following parameters determine substitution eligibility:

Voltage - DC Reverse (Vr) (Max): Must equal or exceed 1000 V
Current - Average Rectified (Io): Must equal or exceed 1 A
Package / Case: Must be DO-214AC (SMA)
Mounting Type: Must be Surface Mount
Operating Temperature Range: Must encompass or exceed -50°C to 150°C

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [V @ A]	trr [ns]	Ir @ Vr [µA]	Speed	Package	Temp Range [°C]
ER1M	Diotec Semiconductor	1000	1	1.7 @ 1	75	5 @ 1000	Fast Recovery ≤ 500ns	DO-214AC (SMA)	-50 to 150
UM7	Diotec Semiconductor	1000	1	1.7 @ 1	75	5 @ 1	Fast Recovery ≤ 500ns	DO-214AC (SMA)	-50 to 150
HS2MA	Good-Ark Semiconductor	1000	1.5	1.7 @ 1.5	75	5 @ 1000	Fast Recovery ≤ 500ns	DO-214AC (SMA)	-55 to 150
S1M-E3/61T	Vishay General Semiconductor	1000	1	1.1 @ 1	1800	5 @ 1000	Standard Recovery >500ns	DO-214AC (SMA)	-55 to 150
S1M-M3/5AT	Vishay General Semiconductor	1000	1	1.1 @ 1	1800	5 @ 1000	Standard Recovery >500ns	DO-214AC (SMA)	-55 to 150
US1M-M3/5AT	Vishay General Semiconductor	1000	1	1.7 @ 1	Not specified	10 @ 1000	Fast Recovery ≤ 500ns	DO-214AC (SMA)	-55 to 150

Engineering Selection Recommendations

UM7 (Diotec Semiconductor) is the primary parametric equivalent to ER1M. Both parts are manufactured by Diotec Semiconductor and share identical electrical specifications including 1000 V reverse voltage, 1 A average rectified current, 1.7 V forward voltage at 1 A, and 75 nanosecond reverse recovery time. UM7 is supplied in Tape & Reel packaging and is ROHS3 compliant. Inventory availability is 8119 pieces. This part provides direct functional replacement with no performance compromise.

HS2MA (Good-Ark Semiconductor) is a similar part with higher current rating (1.5 A versus 1 A) and identical reverse recovery time (75 ns). It maintains the same 1000 V reverse voltage and DO-214AC package. The higher current rating provides design margin in applications where current headroom is beneficial. HS2MA is ROHS3 compliant with 15670 pieces in stock.

S1M-E3/61T and S1M-M3/5AT (Vishay General Semiconductor) are similar parts with identical voltage and current ratings but employ standard recovery technology (1.8 microsecond reverse recovery time versus 75 nanoseconds). These parts feature lower forward voltage (1.1 V @ 1 A) and are suitable for applications where switching speed is not critical. Both are ROHS3 compliant with high inventory availability (100100 and 23760 pieces respectively).

US1M-M3/5AT (Vishay General Semiconductor) maintains fast recovery characteristics (≤ 500 ns) and 1.7 V forward voltage matching ER1M but specifies higher reverse leakage current (10 µA versus 5 µA). This part is ROHS3 compliant with 14609 pieces in stock and is suitable where leakage current tolerance permits.

Selection should prioritize UM7 for direct replacement. Alternative selections depend on application requirements for current capacity, switching speed, forward voltage, and leakage current specifications.

Frequently Asked Questions (FAQ)

Q: Can UM7 be used as a direct replacement for ER1M?

A: Yes. UM7 is a parametric equivalent with identical reverse voltage (1000 V), average rectified current (1 A), forward voltage (1.7 V @ 1 A), and reverse recovery time (75 ns). Both parts use the DO-214AC (SMA) surface mount package and operate across the same temperature range. UM7 is suitable for direct substitution without circuit modification.

Q: What is the difference between ER1M and HS2MA?

A: HS2MA has a higher average rectified current rating (1.5 A versus 1 A) while maintaining identical reverse voltage (1000 V), forward voltage (1.7 V), and reverse recovery time (75 ns). Both use the DO-214AC package. HS2MA provides additional current capacity and is suitable for applications requiring higher current handling. The DO-214AC package dimensions are identical, permitting direct PCB substitution.

Q: Why do S1M-E3/61T and S1M-M3/5AT have longer reverse recovery times?

A: S1M-E3/61T and S1M-M3/5AT employ standard recovery diode technology with 1.8 microsecond reverse recovery time, compared to ER1M's 75 nanosecond fast recovery time. Standard recovery diodes are optimized for lower forward voltage (1.1 V @ 1 A) and are suitable for general-purpose rectification where switching speed is not a design constraint. Fast recovery diodes like ER1M are required for high-frequency switching applications.

Q: Are all substitute parts available in the same package?

A: Yes. All substitute parts listed use the DO-214AC (SMA) surface mount package with identical mechanical dimensions. Packaging format (Tape & Reel, Cut Tape, or Digi-Reel) varies by part number and supplier but does not affect PCB compatibility. Verify packaging format based on assembly equipment requirements.

Q: What is the significance of reverse leakage current differences?

A: ER1M specifies 5 µA reverse leakage at 1000 V. US1M-M3/5AT specifies 10 µA at 1000 V. Higher leakage current increases power dissipation in reverse bias conditions and may affect circuit performance in high-impedance applications. Select parts with leakage current specifications matching application requirements.

Q: Are all substitute parts RoHS3 compliant?

A: UM7, HS2MA, S1M-E3/61T, S1M-M3/5AT, and US1M-M3/5AT are all ROHS3 compliant. ER1M does not specify RoHS status. For applications requiring RoHS compliance certification, use substitute parts with documented ROHS3 compliance.

Q: Can US1M-M3/5AT be used where fast recovery performance is required?

A: US1M-M3/5AT specifies fast recovery characteristics (≤ 500 ns) and is suitable for applications requiring fast switching. However, reverse recovery time is not explicitly specified in the provided data. Verify reverse recovery time specification with the manufacturer before selecting for high-frequency switching applications where precise recovery time is critical.

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