EPC2010 GaNFET N-Channel 200V 12A Die Equivalent & Substitute Parts

Part Overview

The EPC2010 is an N-Channel GaNFET (Gallium Nitride Field Effect Transistor) rated for 200V drain-to-source voltage with 12A continuous drain current at 25°C. This surface mount die package component is designed for high-efficiency switching applications requiring compact form factors and low on-resistance characteristics.

The EPC2010 is discontinued at DiGi Electronics, necessitating identification of functionally equivalent substitute components. Substitute parts must maintain compatibility across critical electrical parameters including voltage rating, drain current capability, on-resistance characteristics, and gate charge specifications to ensure direct replacement without circuit redesign.

Substiute Parts

EPC2010

EPCIn Stock: 10368EPC2010 Datasheet

Current PartRFQ

EPC2010C

EPCIn Stock: 17649EPC2010C Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the EPC2010 is determined by strict equivalence across the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The substitute part must maintain the 200V Vdss rating to ensure safe operation within the same voltage domain.

Current Capability: The substitute part must support the continuous drain current requirement. Parts with equal or greater current ratings at 25°C are acceptable for direct substitution.

On-Resistance Characteristics: The Rds On (Max) specification at rated gate voltage (5V) must be equal to or lower than the original part to maintain or improve efficiency.

Gate Charge and Input Capacitance: These parameters affect switching speed and drive circuit requirements. Substitutes with equal or lower gate charge and input capacitance values ensure compatibility with existing gate drive circuits.

Gate Voltage Thresholds: Vgs(th) and maximum gate voltage ratings must match to ensure proper gate drive compatibility.

Temperature Range: The operating temperature range must encompass or exceed the original specification to maintain performance across the intended thermal environment.

Package and Mounting: Both the main part and substitute must be surface mount die packages to ensure mechanical and thermal compatibility.

Compliance Standards: RoHS3 compliance and MSL rating must be maintained for manufacturing and environmental requirements.

Parameter Comparison

Engineering Selection Recommendations

EPC2010C as Direct Substitute:

The EPC2010C meets all substitution criteria for the discontinued EPC2010. Both components share identical voltage ratings (200V Vdss), gate voltage thresholds (2.5V @ 3mA), maximum gate voltage limits (+6V, -4V), and input capacitance specifications (540 pF @ 100V).

The EPC2010C provides enhanced current capability (22A continuous drain current versus 12A), maintaining the same on-resistance specification (25 mOhm @ 5V gate voltage). Gate charge is reduced in the EPC2010C (5.3 nC versus 7.5 nC), resulting in improved switching performance and reduced gate drive power requirements.

The EPC2010C extends the operating temperature range to 150°C (from 125°C), providing additional thermal margin for high-temperature applications. Both components maintain ROHS3 compliance and MSL Level 1 ratings.

Product Status Consideration:

The EPC2010C is designated "Not For New Designs" by the manufacturer. This status indicates the part is available for existing inventory and replacement applications but is not recommended for new product development. For new designs, consultation with EPC regarding current-generation eGaN FET alternatives is advised.

Compliance and Certification:

Both the EPC2010 and EPC2010C maintain ROHS3 compliance and REACH Unaffected status, ensuring compatibility with current environmental and regulatory requirements. MSL Level 1 (Unlimited) rating indicates no moisture sensitivity constraints during storage or handling.

Frequently Asked Questions (FAQ)

Q: Can the EPC2010C directly replace the EPC2010 in existing circuits?

A: Yes. The EPC2010C maintains electrical compatibility across all critical parameters: 200V voltage rating, matching gate voltage thresholds, identical maximum gate voltage limits, and equivalent on-resistance at 5V gate drive. The increased current rating (22A versus 12A) and reduced gate charge (5.3 nC versus 7.5 nC) provide performance improvements without requiring circuit modifications.

Q: What is the significance of the higher continuous drain current in the EPC2010C?

A: The EPC2010C supports 22A continuous drain current at 25°C, compared to 12A in the EPC2010. This increased current capability allows the substitute part to handle higher power levels or operate at lower junction temperatures in the same application. The on-resistance remains equivalent (25 mOhm @ 5V), so efficiency characteristics are maintained.

Q: Does the reduced gate charge in the EPC2010C affect gate drive circuit design?

A: The EPC2010C gate charge is 5.3 nC at 5V, compared to 7.5 nC in the EPC2010. Lower gate charge reduces the charge that must be supplied by the gate drive circuit, resulting in lower gate drive power dissipation and potentially faster switching transitions. Existing gate drive circuits designed for the EPC2010 will operate with improved performance using the EPC2010C without modification.

Q: Are there packaging differences between the EPC2010 and EPC2010C?

A: Both components are surface mount die packages. The EPC2010C is available in Cut Tape (CT) and Digi-Reel packaging options, whereas the EPC2010 packaging specification was not detailed. Both maintain identical die form factors and thermal characteristics.

Q: What is the impact of the extended temperature range in the EPC2010C?

A: The EPC2010C operates from -40°C to 150°C junction temperature, extending the upper limit by 25°C compared to the EPC2010 (-40°C to 125°C). This extended range provides additional thermal margin for applications operating in high-temperature environments or with elevated power dissipation.

Q: Are both parts RoHS3 compliant?

A: Yes. Both the EPC2010 and EPC2010C are ROHS3 compliant and REACH Unaffected, meeting current environmental and regulatory requirements for electronic components.

Q: What does "Not For New Designs" mean for the EPC2010C?

A: This product status indicates the EPC2010C is available for replacement and existing inventory applications but is not recommended for new product development. For new designs, current-generation eGaN FET alternatives from EPC should be evaluated.