EL817(A)-VG Equivalent & Substitute Parts

Part Overview

The EL817(A)-VG is an optoisolator with transistor output manufactured by Everlight Electronics Co Ltd. This component provides galvanic isolation up to 5000Vrms with a single channel configuration in a 4-DIP package. The part is currently in active production status with 1148 units in stock. Substitute parts are identified to address application requirements including higher isolation voltage ratings, alternative current transfer ratio specifications, or inventory availability considerations.

Substiute Parts

EL817(A)-VG
Everlight Electronics Co LtdIn Stock: 1184EL817(A)-VG Datasheet
EL817(A)-VG
Current Part
VO618A-2
Vishay Semiconductor Opto DivisionIn Stock: 4441VO618A-2 Datasheet
VO618A-2
Similar
VO618A-4
Vishay Semiconductor Opto DivisionIn Stock: 12873VO618A-4 Datasheet
VO618A-4
Similar

Key Parameters

Parameter Value
Isolation Voltage 5000Vrms
Number of Channels 1
Output Type Transistor
Current Transfer Ratio (Min) 80% @ 5mA
Current Transfer Ratio (Max) 160% @ 5mA
Maximum Output Voltage 80V
Maximum Output Current 50mA
Package Type 4-DIP (0.300", 7.62mm)
Operating Temperature Range -55°C to 110°C
Mounting Type Through Hole

Substitute Part Grouping Explanation

Substitute parts for the EL817(A)-VG are qualified based on the following criteria:

Electrical Compatibility Parameters:

  • Isolation voltage rating equal to or greater than 5000Vrms
  • Single channel configuration
  • Transistor output type
  • Maximum output voltage of 80V or greater
  • Maximum output current of 50mA or greater
  • Operating temperature range encompassing -55°C to 110°C
  • DC input type

Mechanical Compatibility Parameters:

  • 4-DIP package format with 0.300" (7.62mm) pitch
  • Through hole mounting type

Regulatory Compliance:

  • RoHS3 compliance
  • Moisture Sensitivity Level 1 (Unlimited)

The substitute parts VO618A-2 and VO618A-4 meet these criteria with enhanced isolation voltage ratings of 5300Vrms and alternative current transfer ratio specifications.

Parameter Comparison

Parameter EL817(A)-VG VO618A-2 VO618A-4
Manufacturer Everlight Electronics Co Ltd Vishay Semiconductor Opto Division Vishay Semiconductor Opto Division
Number of Channels 1 1 1
Voltage - Isolation 5000Vrms 5300Vrms 5300Vrms
Current Transfer Ratio (Min) 80% @ 5mA 63% @ 1mA 160% @ 1mA
Current Transfer Ratio (Max) 160% @ 5mA 125% @ 1mA 320% @ 1mA
Rise / Fall Time (Typ) 6µs, 8µs 2µs, 2µs 2µs, 2µs
Output Type Transistor Transistor Transistor
Voltage - Output (Max) 80V 80V 80V
Current - Output / Channel 50mA 50mA 50mA
Voltage - Forward (Vf) (Typ) 1.2V 1.1V 1.1V
Current - DC Forward (If) (Max) 60mA 60mA 60mA
Vce Saturation (Max) 200mV 400mV 400mV
Operating Temperature -55°C to 110°C -55°C to 110°C -55°C to 110°C
Package / Case 4-DIP (0.300", 7.62mm) 4-DIP (0.300", 7.62mm) 4-DIP (0.300", 7.62mm)
Mounting Type Through Hole Through Hole Through Hole
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
MSL 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
Product Status Active Active Active

Engineering Selection Recommendations

EL817(A)-VG Selection Criteria:

  • Primary choice when current design specifies Everlight Electronics manufacturer
  • Suitable for applications requiring 5000Vrms isolation minimum
  • Current transfer ratio range of 80% to 160% at 5mA input current
  • Vce saturation specification of 200mV maximum

VO618A-4 Selection Criteria:

  • Higher current transfer ratio specification (160% to 320% at 1mA) for applications requiring enhanced gain characteristics
  • Improved isolation voltage rating of 5300Vrms
  • Faster switching response with 2µs rise and fall times
  • Active production status with 12850 units in stock
  • RoHS3 compliant and REACH unaffected

VO618A-2 Selection Criteria:

  • Lower current transfer ratio specification (63% to 125% at 1mA) for applications requiring reduced gain
  • Improved isolation voltage rating of 5300Vrms
  • Faster switching response with 2µs rise and fall times
  • Active production status with 4394 units in stock
  • RoHS3 compliant and REACH unaffected

All substitute parts maintain mechanical compatibility through identical 4-DIP package format and through-hole mounting configuration. All parts comply with RoHS3 requirements and MSL Level 1 specifications.

Frequently Asked Questions (FAQ)

Q: Can VO618A-4 directly replace EL817(A)-VG in existing designs?

A: VO618A-4 is mechanically and electrically compatible as a substitute. Both components use 4-DIP through-hole packages with identical pin spacing. Electrical parameters including maximum output voltage (80V) and maximum output current (50mA) are identical. The primary differences are higher isolation voltage (5300Vrms vs 5000Vrms), different current transfer ratio specifications, and faster switching times. Circuit validation is required to confirm compatibility with specific application requirements.

Q: What is the difference between VO618A-2 and VO618A-4?

A: Both VO618A-2 and VO618A-4 share identical mechanical and most electrical specifications. The key difference is current transfer ratio: VO618A-2 provides 63% to 125% at 1mA, while VO618A-4 provides 160% to 320% at 1mA. Selection depends on the required gain characteristics for the specific application circuit.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. EL817(A)-VG, VO618A-2, and VO618A-4 are all RoHS3 compliant with MSL Level 1 (Unlimited) moisture sensitivity rating.

Q: What is the package compatibility between these optoisolators?

A: All three parts use identical 4-DIP packages with 0.300" (7.62mm) pitch spacing and through-hole mounting. PCB footprints are directly compatible without modification.

Q: How do switching times compare between these parts?

A: EL817(A)-VG has rise and fall times of 6µs and 8µs respectively. Both VO618A-2 and VO618A-4 provide faster switching with 2µs rise and fall times. Applications sensitive to switching speed should account for this difference.

Q: What is the significance of Vce saturation differences?

A: EL817(A)-VG specifies maximum Vce saturation of 200mV, while both Vishay substitutes specify 400mV maximum. This affects output voltage drop during transistor saturation and should be evaluated in applications with tight voltage margin requirements.

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